| Year |
Citation |
Score |
| 2023 |
Lou S, Lyu B, Chen J, Zhou X, Jiang W, Qiu L, Shen P, Ma S, Zhang Z, Xie Y, Wu Z, Chen Y, Xu K, Liang Q, Watanabe K, ... ... Zhang G, et al. Tip Growth of Quasi-Metallic Bilayer Graphene Nanoribbons with Armchair Chirality. Nano Letters. PMID 38147652 DOI: 10.1021/acs.nanolett.3c03534 |
0.79 |
|
| 2023 |
Yang W, Zhang G. Revived superconductivity in twisted double bilayer graphene. Nature Materials. 22: 1285-1286. PMID 37891262 DOI: 10.1038/s41563-023-01685-z |
0.347 |
|
| 2023 |
Xue G, Sui X, Yin P, Zhou Z, Li X, Cheng Y, Guo Q, Zhang S, Wen Y, Zuo Y, Zhao C, Wu M, Gao P, Li Q, He J, ... ... Zhang G, et al. Modularized batch production of 12-inch transition metal dichalcogenides by local element supply. Science Bulletin. PMID 37438155 DOI: 10.1016/j.scib.2023.06.037 |
0.714 |
|
| 2023 |
Tang J, Wang Q, Tian J, Li X, Li N, Peng Y, Li X, Zhao Y, He C, Wu S, Li J, Guo Y, Huang B, Chu Y, Ji Y, ... ... Zhang G, et al. Low power flexible monolayer MoS integrated circuits. Nature Communications. 14: 3633. PMID 37336907 DOI: 10.1038/s41467-023-39390-9 |
0.521 |
|
| 2023 |
Zhang X, Hu Y, Lien-Medrano CR, Li J, Shi J, Qin X, Liao Z, Wang Y, Wang Z, Li J, Chen J, Zhang G, Barth JV, Frauenheim T, Auwärter W, et al. Photoresponse of Solution-Synthesized Graphene Nanoribbon Heterojunctions on Diamond Indicating Phototunable Photodiode Polarity. Journal of the American Chemical Society. PMID 37042822 DOI: 10.1021/jacs.2c13822 |
0.307 |
|
| 2023 |
Tian J, Wang Q, Huang X, Tang J, Chu Y, Wang S, Shen C, Zhao Y, Li N, Liu J, Ji Y, Huang B, Peng Y, Yang R, Yang W, ... ... Zhang G, et al. Scaling of MoS Transistors and Inverters to Sub-10 nm Channel Length with High Performance. Nano Letters. PMID 37010357 DOI: 10.1021/acs.nanolett.3c00031 |
0.482 |
|
| 2023 |
Zheng P, Wei W, Liang Z, Qin B, Tian J, Wang J, Qiao R, Ren Y, Chen J, Huang C, Zhou X, Zhang G, Tang Z, Yu D, Ding F, et al. Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides. Nature Communications. 14: 592. PMID 36737606 DOI: 10.1038/s41467-023-36286-6 |
0.48 |
|
| 2022 |
Wang Q, Tang J, Li X, Tian J, Liang J, Li N, Ji D, Xian L, Guo Y, Li L, Zhang Q, Chu Y, Wei Z, Zhao Y, Du L, ... ... Zhang G, et al. Layer-by-layer epitaxy of multi-layer MoS wafers. National Science Review. 9: nwac077. PMID 35769232 DOI: 10.1093/nsr/nwac077 |
0.65 |
|
| 2022 |
Zuo Y, Liu C, Ding L, Qiao R, Tian J, Liu C, Wang Q, Xue G, You Y, Guo Q, Wang J, Fu Y, Liu K, Zhou X, Hong H, ... ... Zhang G, et al. Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply. Nature Communications. 13: 1007. PMID 35197463 DOI: 10.1038/s41467-022-28628-7 |
0.744 |
|
| 2021 |
Wei Z, Tang J, Li X, Chi Z, Wang Y, Wang Q, Han B, Li N, Huang B, Li J, Yu H, Yuan J, Chen H, Sun J, Chen L, ... ... Zhang G, et al. Wafer-Scale Oxygen-Doped MoS Monolayer. Small Methods. 5: e2100091. PMID 34927920 DOI: 10.1002/smtd.202100091 |
0.587 |
|
| 2021 |
Wang J, Xu X, Cheng T, Gu L, Qiao R, Liang Z, Ding D, Hong H, Zheng P, Zhang Z, Zhang Z, Zhang S, Cui G, Chang C, Huang C, ... ... Zhang G, et al. Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS monolayer on vicinal a-plane sapphire. Nature Nanotechnology. PMID 34782776 DOI: 10.1038/s41565-021-01004-0 |
0.742 |
|
| 2021 |
Luo D, Tang J, Shen X, Ji F, Yang J, Weathersby S, Kozina ME, Chen Z, Xiao J, Ye Y, Cao T, Zhang G, Wang X, Lindenberg AM. Twist-Angle-Dependent Ultrafast Charge Transfer in MoS-Graphene van der Waals Heterostructures. Nano Letters. PMID 34529439 DOI: 10.1021/acs.nanolett.1c02356 |
0.329 |
|
| 2021 |
Du L, Zhao Y, Wu L, Hu X, Yao L, Wang Y, Bai X, Dai Y, Qiao J, Uddin MG, Li X, Lahtinen J, Bai X, Zhang G, Ji W, et al. Giant anisotropic photonics in the 1D van der Waals semiconductor fibrous red phosphorus. Nature Communications. 12: 4822. PMID 34376660 DOI: 10.1038/s41467-021-25104-6 |
0.481 |
|
| 2021 |
Meng S, Meng L, Xin N, Wang J, Xu J, Ren S, Yan Z, Zhang M, Shen C, Zhang G, Guo X. Atomically Precise Engineering of Single-Molecule Stereoelectronic Effect. Angewandte Chemie (International Ed. in English). PMID 33650169 DOI: 10.1002/anie.202100168 |
0.436 |
|
| 2021 |
Cui B, Yu D, Shao Z, Liu Y, Wu H, Nan P, Zhu Z, Wu C, Guo T, Chen P, Zhou HA, Xi L, Jiang W, Wang H, Liang S, ... ... Zhang G, et al. Néel-Type Elliptical Skyrmions in a Laterally Asymmetric Magnetic Multilayer. Advanced Materials (Deerfield Beach, Fla.). e2006924. PMID 33599001 DOI: 10.1002/adma.202006924 |
0.527 |
|
| 2020 |
Lee K, Utama MIB, Kahn S, Samudrala A, Leconte N, Yang B, Wang S, Watanabe K, Taniguchi T, Altoé MVP, Zhang G, Weber-Bargioni A, Crommie M, Ashby PD, Jung J, et al. Ultrahigh-resolution scanning microwave impedance microscopy of moiré lattices and superstructures. Science Advances. 6. PMID 33298449 DOI: 10.1126/sciadv.abd1919 |
0.334 |
|
| 2020 |
Tang J, Wei Z, Wang Q, Wang Y, Han B, Li X, Huang B, Liao M, Liu J, Li N, Zhao Y, Shen C, Guo Y, Bai X, Gao P, ... ... Zhang G, et al. In Situ Oxygen Doping of Monolayer MoS for Novel Electronics. Small (Weinheim An Der Bergstrasse, Germany). e2004276. PMID 32939960 DOI: 10.1002/Smll.202004276 |
0.708 |
|
| 2020 |
Wang Q, Li N, Tang J, Zhu J, Zhang Q, Jia Q, Lu Y, Wei Z, Yu H, Zhao Y, Guo Y, Gu L, Sun G, Yang W, Yang R, ... ... Zhang G, et al. Wafer-scale Highly Oriented Monolayer MoS2 with Large Domain Sizes. Nano Letters. PMID 32833463 DOI: 10.1021/Acs.Nanolett.0C02531 |
0.37 |
|
| 2020 |
Liao M, Wei Z, Du L, Wang Q, Tang J, Yu H, Wu F, Zhao J, Xu X, Han B, Liu K, Gao P, Polcar T, Sun Z, Shi D, ... ... Zhang G, et al. Precise control of the interlayer twist angle in large scale MoS homostructures. Nature Communications. 11: 2153. PMID 32358571 DOI: 10.1038/S41467-020-16056-4 |
0.557 |
|
| 2020 |
Li J, Yang X, Liu Y, Huang B, Wu R, Zhang Z, Zhao B, Ma H, Dang W, Wei Z, Wang K, Lin Z, Yan X, Sun M, Li B, ... ... Zhang G, et al. General synthesis of two-dimensional van der Waals heterostructure arrays. Nature. 579: 368-374. PMID 32188941 DOI: 10.1038/S41586-020-2098-Y |
0.373 |
|
| 2020 |
Meng J, Wei Z, Tang J, Zhao Y, Wang Q, Tian J, Yang R, Zhang GY, Shi D. Employing defected monolayer MoS2 as charge storage materials. Nanotechnology. PMID 32126546 DOI: 10.1088/1361-6528/Ab7C47 |
0.315 |
|
| 2020 |
He C, Tang J, Shang DS, Tang J, Xi Y, Wang S, Li N, Zhang Q, Lu J, Wei Z, Wang Q, Shen C, Li J, Shen S, Shen J, ... ... Zhang G, et al. Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing. Acs Applied Materials & Interfaces. PMID 32052957 DOI: 10.1021/Acsami.9B21747 |
0.322 |
|
| 2020 |
Guo X, Liu R, Hu D, Hu H, Wei Z, Wang R, Dai Y, Cheng Y, Chen K, Liu K, Zhang G, Zhu X, Sun Z, Yang X, Dai Q. Efficient All-Optical Plasmonic Modulators with Atomically Thin Van Der Waals Heterostructures. Advanced Materials (Deerfield Beach, Fla.). e1907105. PMID 32020742 DOI: 10.1002/Adma.201907105 |
0.571 |
|
| 2020 |
Lu X, Tang J, Wallbank JR, Wang S, Shen C, Wu S, Chen P, Yang W, Zhang J, Watanabe K, Taniguchi T, Yang R, Shi D, Efetov DK, Fal'ko VI, ... Zhang G, et al. High-order minibands and interband Landau level reconstruction in graphene moiré superlattices Physical Review B. 102. DOI: 10.1103/Physrevb.102.045409 |
0.448 |
|
| 2020 |
Chu Y, Liu L, Yuan Y, Shen C, Yang R, Shi D, Yang W, Zhang G. A Review of Experimental Advances in Twisted Graphene Moiré Superlattice Chinese Physics B. DOI: 10.1088/1674-1056/Abb221 |
0.426 |
|
| 2020 |
Shen C, Chu Y, Wu Q, Li N, Wang S, Zhao Y, Tang J, Liu J, Tian J, Watanabe K, Taniguchi T, Yang R, Meng ZY, Shi D, Yazyev OV, ... Zhang G, et al. Correlated states in twisted double bilayer graphene Nature Physics. 16: 520-525. DOI: 10.1038/S41567-020-0825-9 |
0.459 |
|
| 2020 |
Wei Z, Wang Q, Li L, Yang R, Zhang G. Monolayer MoS 2 epitaxy Nano Research. 1-11. DOI: 10.1007/S12274-020-3019-Y |
0.382 |
|
| 2019 |
Wang Z, Liu X, Zhu J, You S, Bian K, Zhang G, Feng J, Jiang Y. Local engineering of topological phase in monolayer MoS. Science Bulletin. 64: 1750-1756. PMID 36659533 DOI: 10.1016/j.scib.2019.10.004 |
0.303 |
|
| 2019 |
Du L, Tang J, Liang J, Liao M, Jia Z, Zhang Q, Zhao Y, Yang R, Shi D, Gu L, Xiang J, Liu K, Sun Z, Zhang G. Giant Valley Coherence at Room Temperature in 3R WS with Broken Inversion Symmetry. Research (Washington, D.C.). 2019: 6494565. PMID 31922136 DOI: 10.34133/2019/6494565 |
0.449 |
|
| 2019 |
Lu X, Stepanov P, Yang W, Xie M, Aamir MA, Das I, Urgell C, Watanabe K, Taniguchi T, Zhang G, Bachtold A, MacDonald AH, Efetov DK. Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene. Nature. 574: 653-657. PMID 31666722 DOI: 10.1038/S41586-019-1695-0 |
0.384 |
|
| 2019 |
Zhang J, Du L, Feng S, Zhang RW, Cao B, Zou C, Chen Y, Liao M, Zhang B, Yang SA, Zhang G, Yu T. Enhancing and controlling valley magnetic response in MoS/WS heterostructures by all-optical route. Nature Communications. 10: 4226. PMID 31530805 DOI: 10.1038/S41467-019-12128-2 |
0.322 |
|
| 2019 |
Yang R, Liu L, Feng S, Liu Y, Li SL, Zhai K, Xiang J, Mu C, Nie A, Wen F, Wang B, Zhang G, Gong Y, Zhao Z, Tian Y, et al. One-Step Growth of Spatially Graded MoW S Monolayer with Wide Span in Composition (from x=0 to 1) at Large Scale. Acs Applied Materials & Interfaces. PMID 31119937 DOI: 10.1021/Acsami.9B03608 |
0.328 |
|
| 2019 |
Meng L, Xin N, Hu C, Wang J, Gui B, Shi J, Wang C, Shen C, Zhang G, Guo H, Meng S, Guo X. Side-group chemical gating via reversible optical and electric control in a single molecule transistor. Nature Communications. 10: 1450. PMID 30926785 DOI: 10.1038/S41467-019-09120-1 |
0.53 |
|
| 2019 |
Zhu J, Wang ZC, Dai H, Wang Q, Yang R, Yu H, Liao M, Zhang J, Chen W, Wei Z, Li N, Du L, Shi D, Wang W, Zhang L, ... ... Zhang G, et al. Boundary activated hydrogen evolution reaction on monolayer MoS. Nature Communications. 10: 1348. PMID 30902982 DOI: 10.1038/S41467-019-09269-9 |
0.518 |
|
| 2019 |
Du L, Zhao Y, Jia Z, Liao M, Wang Q, Guo X, Shi Z, Yang R, Watanabe K, Taniguchi T, Xiang J, Shi D, Dai Q, Sun Z, Zhang G. Strong and tunable interlayer coupling of infrared-active phonons to excitons in van der Waals heterostructures Physical Review B. 99: 205410. DOI: 10.1103/Physrevb.99.205410 |
0.73 |
|
| 2019 |
Du L, Liao M, Liu GB, Wang Q, Yang R, Shi D, Yao Y, Zhang G. Strongly distinct electrical response between circular and valley polarization in bilayer transition metal dichalcogenides Physical Review B. 99: 195415. DOI: 10.1103/Physrevb.99.195415 |
0.52 |
|
| 2019 |
Du L, Zhang Q, Zhang T, Jia Z, Liang J, Liu GB, Yang R, Shi D, Xiang J, Liu K, Sun Z, Yao Y, Zhang Q, Zhang G. Robust circular polarization of indirect Q-K transitions in bilayer 3 R − W S 2 Physical Review B. 100: 161404. DOI: 10.1103/Physrevb.100.161404 |
0.62 |
|
| 2019 |
Liao M, Du L, Zhang T, Gu L, Yao Y, Yang R, Shi D, Zhang G. Pressure-mediated contact quality improvement between monolayer MoS
2
and graphite Chinese Physics B. 28: 017301. DOI: 10.1088/1674-1056/28/1/017301 |
0.523 |
|
| 2019 |
Liu L, Liu C, Li X, Wang S, Wu F, Zhang G. Graphene-Based Planar On-Chip Micro-Supercapacitors with Whole Series/Parallel Configuration for Integration Integrated Ferroelectrics. 199: 95-104. DOI: 10.1080/10584587.2019.1592602 |
0.316 |
|
| 2019 |
Li Z, Xu Y, Cao B, Qi L, Zhao E, Yang S, Wang C, Wang J, Zhang G, Xu K. The interface of epitaxial nanographene on GaN by PECVD Aip Advances. 9: 95060. DOI: 10.1063/1.5111443 |
0.497 |
|
| 2019 |
Chen P, Cheng C, Shen C, Zhang J, Wu S, Lu X, Wang S, Du L, Watanabe K, Taniguchi T, Sun J, Yang R, Shi D, Liu K, Meng S, ... Zhang G, et al. Band evolution of two-dimensional transition metal dichalcogenides under electric fields Applied Physics Letters. 115: 083104. DOI: 10.1063/1.5093055 |
0.628 |
|
| 2019 |
Wang Z, Liu X, Zhu J, You S, Bian K, Zhang G, Feng J, Jiang Y. Local engineering of topological phase in monolayer MoS2 Science Bulletin. 64: 1750-1756. DOI: 10.1016/J.Scib.2019.10.004 |
0.415 |
|
| 2019 |
Zhao W, Huang Y, Shen C, Li C, Cai Y, Xu Y, Rong H, Gao Q, Wang Y, Zhao L, Bao L, Wang Q, Zhang G, Gao H, Xu Z, et al. Electronic structure of exfoliated millimeter-sized monolayer WSe2 on silicon wafer Nano Research. 12: 3095-3100. DOI: 10.1007/S12274-019-2557-7 |
0.343 |
|
| 2019 |
Wang X, Yang H, Yang R, Wang Q, Zheng J, Qiao L, Peng X, Li Y, Chen D, Xiong X, Duan J, Zhang G, Ma J, Han J, Xiao W, et al. Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations Nano Research. 12: 1900-1905. DOI: 10.1007/S12274-019-2456-Y |
0.727 |
|
| 2019 |
Li N, Wei Z, Zhao J, Wang Q, Shen C, Wang S, Tang J, Yang R, Shi D, Zhang G. Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics Advanced Materials Interfaces. 6: 1802055. DOI: 10.1002/Admi.201802055 |
0.317 |
|
| 2019 |
Du L, Tang J, Zhao Y, Li X, Yang R, Hu X, Bai X, Wang X, Watanabe K, Taniguchi T, Shi D, Yu G, Bai X, Hasan T, Zhang G, et al. Lattice Dynamics, Phonon Chirality, and Spin–Phonon Coupling in 2D Itinerant Ferromagnet Fe3GeTe2 Advanced Functional Materials. 29: 1904734. DOI: 10.1002/Adfm.201904734 |
0.509 |
|
| 2018 |
Zhao J, Wei Z, Zhang Q, Yu H, Wang S, Yang X, Gao G, Qin S, Zhang G, Sun Q, Wang ZL. Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS2 Field Effect Transistor. Acs Nano. PMID 30563324 DOI: 10.1021/Acsnano.8B07477 |
0.342 |
|
| 2018 |
Yang W, Graef H, Lu X, Zhang G, Taniguchi T, Watanabe K, Bachtold A, Teo EHT, Baudin E, Bocquillon E, Fève G, Berroir JM, Carpentier D, Goerbig MO, Plaçais B. Landau Velocity for Collective Quantum Hall Breakdown in Bilayer Graphene. Physical Review Letters. 121: 136804. PMID 30312074 DOI: 10.1103/Physrevlett.121.136804 |
0.388 |
|
| 2018 |
Liao M, Wu ZW, Du L, Zhang T, Wei Z, Zhu J, Yu H, Tang J, Gu L, Xing Y, Yang R, Shi D, Yao Y, Zhang G. Twist angle-dependent conductivities across MoS/graphene heterojunctions. Nature Communications. 9: 4068. PMID 30287809 DOI: 10.1038/S41467-018-06555-W |
0.653 |
|
| 2018 |
Xin N, Li X, Jia C, Gong Y, Li M, Wang S, Zhang G, Yang J, Guo X. Tuning Charge Transport in Aromatic-Ring Single-Molecule Junctions via Ionic Liquid Gating. Angewandte Chemie (International Ed. in English). PMID 30215882 DOI: 10.1002/Anie.201807465 |
0.399 |
|
| 2018 |
Wu S, Liu B, Shen C, Li S, Huang X, Lu X, Chen P, Wang G, Wang D, Liao M, Zhang J, Zhang T, Wang S, Yang W, Yang R, ... ... Zhang G, et al. Magnetotransport Properties of Graphene Nanoribbons with Zigzag Edges. Physical Review Letters. 120: 216601. PMID 29883135 DOI: 10.1103/Physrevlett.120.216601 |
0.663 |
|
| 2018 |
Jiang L, Wang S, Shi Z, Jin C, Utama MIB, Zhao S, Shen YR, Gao HJ, Zhang G, Wang F. Manipulation of domain-wall solitons in bi- and trilayer graphene. Nature Nanotechnology. PMID 29358639 DOI: 10.1038/S41565-017-0042-6 |
0.793 |
|
| 2018 |
Chen C, Avila J, Wang S, Wang Y, Mucha-Kruczynski M, Shen C, Yang R, Nosarzewski B, Devereaux TP, Zhang G, Asensio MC. Emergence of interfacial polarons from electron-phonon coupling in graphene/h-BN van der Waals heterostructures. Nano Letters. PMID 29302973 DOI: 10.1021/Acs.Nanolett.7B04604 |
0.419 |
|
| 2018 |
Du L, Zhang T, Liao M, Liu G, Wang S, He R, Ye Z, Yu H, Yang R, Shi D, Yao Y, Zhang G. Temperature-driven evolution of critical points, interlayer coupling, and layer polarization in bilayer
MoS2 Physical Review B. 97. DOI: 10.1103/Physrevb.97.165410 |
0.547 |
|
| 2018 |
Du L, Zhang Q, Gong B, Liao M, Zhu J, Yu H, He R, Liu K, Yang R, Shi D, Gu L, Yan F, Zhang G, Zhang Q. Robust spin-valley polarization in commensurate
MoS2
/graphene heterostructures Physical Review B. 97. DOI: 10.1103/Physrevb.97.115445 |
0.377 |
|
| 2018 |
Zhang W, Li L, Zhang G, Zhang S. Interfacial structure and wetting behavior of water droplets on graphene under a static magnetic field Journal of Molecular Liquids. 269: 187-192. DOI: 10.1016/J.Molliq.2018.08.042 |
0.41 |
|
| 2018 |
Wang D, Yu H, Tao L, Xiao W, Fan P, Zhang T, Liao M, Guo W, Shi D, Du S, Zhang G, Gao H. Bandgap broadening at grain boundaries in single-layer MoS2 Nano Research. 11: 6102-6109. DOI: 10.1007/S12274-018-2128-3 |
0.654 |
|
| 2017 |
Yang W, Berthou S, Lu X, Wilmart Q, Denis A, Rosticher M, Taniguchi T, Watanabe K, Fève G, Berroir JM, Zhang G, Voisin C, Baudin E, Plaçais B. A graphene Zener-Klein transistor cooled by a hyperbolic substrate. Nature Nanotechnology. PMID 29180743 DOI: 10.1038/S41565-017-0007-9 |
0.481 |
|
| 2017 |
Yu H, Liao M, Zhao W, Liu G, Zhou XJ, Wei Z, Xu X, Liu K, Hu Z, Deng K, Zhou S, Shi JA, Gu L, Shen C, Zhang T, ... ... Zhang G, et al. Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films. Acs Nano. PMID 29141137 DOI: 10.1021/Acsnano.7B03819 |
0.552 |
|
| 2017 |
Zhang TT, Yu ZM, Guo W, Shi D, Zhang G, Yao Y. From Type-II Triply Degenerate Nodal Points and Three-Band Nodal Rings to Type-II Dirac Points in Centrosymmetric Zirconium Oxide. The Journal of Physical Chemistry Letters. PMID 29129074 DOI: 10.1021/Acs.Jpclett.7B02642 |
0.51 |
|
| 2017 |
Xie L, Liao M, Wang S, Yu H, Du L, Tang J, Zhao J, Zhang J, Chen P, Lu X, Wang G, Xie G, Yang R, Shi D, Zhang G. Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors. Advanced Materials (Deerfield Beach, Fla.). PMID 28752671 DOI: 10.1002/Adma.201702522 |
0.417 |
|
| 2017 |
Zhu J, Wang Z, Yu H, Li N, Zhang J, Meng J, Liao M, Zhao J, Lu X, Du L, Yang R, Shi D, Jiang Y, Zhang G. Argon Plasma Induced Phase Transition in Monolayer MoS2. Journal of the American Chemical Society. PMID 28731708 DOI: 10.1021/Jacs.7B05765 |
0.409 |
|
| 2017 |
Zhao J, Li N, Yu H, Wei Z, Liao M, Chen P, Wang S, Shi D, Sun Q, Zhang G. Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation. Advanced Materials (Deerfield Beach, Fla.). PMID 28692765 DOI: 10.1002/Adma.201702076 |
0.344 |
|
| 2017 |
Chen G, Sui M, Wang D, Wang S, Jung J, Moon P, Adam S, Watanabe K, Taniguchi T, Zhou S, Koshino M, Zhang G, Zhang Y. Emergence of Tertiary Dirac Points in Graphene Moiré Superlattices. Nano Letters. PMID 28475836 DOI: 10.1021/Acs.Nanolett.7B00735 |
0.473 |
|
| 2017 |
Liu R, Fan S, Xiao D, Zhang J, Liao M, Yu S, Meng F, Liu B, Gu L, Meng S, Zhang G, Zheng W, Hu S, Li M. Free-Standing Single-Molecule Thick Crystals Consisting of Linear Long-Chain Polymers. Nano Letters. PMID 28199123 DOI: 10.1021/Acs.Nanolett.6B04896 |
0.507 |
|
| 2017 |
Xin N, Wang J, Jia C, Liu Z, Zhang XS, Yu C, Li M, Wang S, Gong Y, Sun H, Zhang G, Liu Z, Zhang G, Liao J, Zhang D, et al. Stereoelectronic Effect-Induced Conductance Switching in Aromatic Chain Single-Molecule Junctions. Nano Letters. PMID 28071918 DOI: 10.1021/Acs.Nanolett.6B04139 |
0.363 |
|
| 2017 |
Chen C, Avila J, Wang S, Yang R, Zhang G, Asensio MC. Electronic structure of graphene/hexagonal boron nitride heterostructure revealed by Nano-ARPES Journal of Physics: Conference Series. 864: 012005. DOI: 10.1088/1742-6596/864/1/012005 |
0.352 |
|
| 2017 |
Xie L, Du L, Lu X, Yang R, Shi D, Zhang G. A facile and efficient dry transfer technique for two-dimensional Van derWaals heterostructure Chinese Physics B. 26: 087306. DOI: 10.1088/1674-1056/26/8/087306 |
0.355 |
|
| 2017 |
Zhao W, Yu H, Liao M, Zhang L, Zou S, Yu H, He C, Zhang J, Zhang G, Lin X. Large area growth of monolayer MoS2 film on quartz and its use as a saturable absorber in laser mode-locking Semiconductor Science and Technology. 32: 25013. DOI: 10.1088/1361-6641/32/2/025013 |
0.317 |
|
| 2017 |
Wang J, Guan Y, Yu H, Li N, Wang S, Shen C, Dai Z, Gan D, Yang R, He S, Zhang G. Transparent graphene microstrip filters for wireless communications Journal of Physics D. 50. DOI: 10.1088/1361-6463/Aa7C99 |
0.41 |
|
| 2017 |
Du L, Yu H, Liao M, Wang S, Xie L, Lu X, Zhu J, Li N, Shen C, Chen P, Yang R, Shi D, Zhang G. Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle Applied Physics Letters. 111: 263106. DOI: 10.1063/1.5011120 |
0.426 |
|
| 2017 |
Zhang T, Wu S, Yang R, Zhang G. Graphene: Nanostructure engineering and applications Frontiers of Physics. 12. DOI: 10.1007/S11467-017-0648-Z |
0.464 |
|
| 2016 |
Yu H, Yang Z, Du L, Zhang J, Shi J, Chen W, Chen P, Liao M, Zhao J, Meng J, Wang G, Zhu J, Yang R, Shi D, Gu L, ... Zhang G, et al. Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane. Small (Weinheim An Der Bergstrasse, Germany). PMID 27925390 DOI: 10.1002/Smll.201603005 |
0.312 |
|
| 2016 |
Liu R, Liao B, Guo X, Hu D, Hu H, Du L, Yu H, Zhang G, Yang X, Dai Q. Study of graphene plasmons in graphene-MoS2 heterostructures for optoelectronic integrated devices. Nanoscale. PMID 27906405 DOI: 10.1039/C6Nr07081G |
0.482 |
|
| 2016 |
Wang G, Bao L, Pei T, Ma R, Zhang YY, Sun L, Zhang G, Yang H, Li J, Gu C, Du S, Pantelides ST, Schrimpf RD, Gao HJ. Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices. Nano Letters. PMID 27786486 DOI: 10.1021/Acs.Nanolett.6B02704 |
0.362 |
|
| 2016 |
Wang E, Chen G, Wan G, Lu X, Chen C, Avila J, Fedorov AV, Zhang G, Asensio MC, Zhang Y, Zhou S. Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 444002. PMID 27604538 DOI: 10.1088/0953-8984/28/44/444002 |
0.451 |
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| 2016 |
Chen H, Wen X, Zhang J, Wu T, Gong Y, Zhang X, Yuan J, Yi C, Lou J, Ajayan PM, Zhuang W, Zhang G, Zheng J. Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures. Nature Communications. 7: 12512. PMID 27539942 DOI: 10.1038/Ncomms12512 |
0.332 |
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| 2016 |
Huang Y, Mai Y, Beser U, Teyssandier J, Velpula G, van Gorp H, Straasø LA, Hansen MR, Rizzo D, Casiraghi C, Yang R, Zhang G, Wu D, Zhang F, Yan D, et al. Poly(ethylene oxide) Functionalized Graphene Nanoribbons with Excellent Solution Processability. Journal of the American Chemical Society. PMID 27463961 DOI: 10.1021/Jacs.6B07061 |
0.426 |
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| 2016 |
Meng J, Wang G, Li X, Lu X, Zhang J, Yu H, Chen W, Du L, Liao M, Zhao J, Chen P, Zhu J, Bai X, Shi D, Zhang G. Rolling Up a Monolayer MoS2 Sheet. Small (Weinheim An Der Bergstrasse, Germany). PMID 27322776 DOI: 10.1002/Smll.201601413 |
0.554 |
|
| 2016 |
Zhao J, Yu H, Chen W, Yang R, Zhu J, Liao M, Shi D, Zhang G. Patterned Peeling 2D MoS2 off the Substrate. Acs Applied Materials & Interfaces. PMID 27314173 DOI: 10.1021/Acsami.6B04896 |
0.356 |
|
| 2016 |
Jia C, Migliore A, Xin N, Huang S, Wang J, Yang Q, Wang S, Chen H, Wang D, Feng B, Liu Z, Zhang G, Qu DH, Tian H, Ratner MA, et al. Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity. Science (New York, N.Y.). 352: 1443-5. PMID 27313042 DOI: 10.1126/Science.Aaf6298 |
0.351 |
|
| 2016 |
Wang D, Chen G, Li C, Cheng M, Yang W, Wu S, Xie G, Zhang J, Zhao J, Lu X, Chen P, Wang G, Meng J, Tang J, Yang R, ... ... Zhang G, et al. Thermally Induced Graphene Rotation on Hexagonal Boron Nitride. Physical Review Letters. 116: 126101. PMID 27058087 DOI: 10.1103/Physrevlett.116.126101 |
0.441 |
|
| 2016 |
Yang W, Lu X, Chen G, Wu S, Xie G, Cheng M, Wang D, Yang R, Shi D, Watanabe K, Taniguchi T, Voisin C, Placais B, Zhang Y, Zhang G. Hofstadter Butterfly and Many body effects in epitaxial graphene superlattice. Nano Letters. PMID 26950258 DOI: 10.1021/Acs.Nanolett.5B05161 |
0.478 |
|
| 2016 |
Gallagher P, Lee M, Amet F, Maksymovych P, Wang J, Wang S, Lu X, Zhang G, Watanabe K, Taniguchi T, Goldhaber-Gordon D. Switchable friction enabled by nanoscale self-assembly on graphene. Nature Communications. 7: 10745. PMID 26902595 DOI: 10.1038/Ncomms10745 |
0.463 |
|
| 2016 |
Chen P, Zhang TT, Zhang J, Xiang J, Yu H, Wu S, Lu X, Wang G, Wen F, Liu Z, Yang R, Shi D, Zhang G. Gate tunable WSe2-BP van der Waals heterojunction devices. Nanoscale. PMID 26810387 DOI: 10.1039/C5Nr09218C |
0.304 |
|
| 2016 |
Wang G, Wu S, Zhang T, Chen P, Lu X, Wang S, Wang D, Watanabe K, Taniguchi T, Shi D, Yang R, Zhang G. Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching Applied Physics Letters. 109: 053101. DOI: 10.1063/1.4959963 |
0.491 |
|
| 2016 |
Shao P, Zhao H, Cao H, Wang X, Pang Y, Li Y, Deng N, Zhang J, Zhang G, Yang Y, Zhang S, Ren T. Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer Applied Physics Letters. 108: 203105. DOI: 10.1063/1.4950850 |
0.373 |
|
| 2016 |
Lu X, Yang W, Wang S, Wu S, Chen P, Zhang J, Zhao J, Meng J, Xie G, Wang D, Wang G, Zhang TT, Watanabe K, Taniguchi T, Yang R, ... ... Zhang G, et al. Graphene nanoribbons epitaxy on boron nitride Applied Physics Letters. 108. DOI: 10.1063/1.4943940 |
0.418 |
|
| 2016 |
Wang E, Lu X, Ding S, Yao W, Yan M, Wan G, Deng K, Wang S, Chen G, Ma L, Jung J, Fedorov AV, Zhang Y, Zhang G, Zhou S. Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride Nature Physics. DOI: 10.1038/Nphys3856 |
0.45 |
|
| 2015 |
Zhang J, Wang J, Chen P, Sun Y, Wu S, Jia Z, Lu X, Yu H, Chen W, Zhu J, Xie G, Yang R, Shi D, Xu X, Xiang J, ... ... Zhang G, et al. Observation of Strong Interlayer Coupling in MoS2 /WS2 Heterostructures. Advanced Materials (Deerfield Beach, Fla.). PMID 26708256 DOI: 10.1002/Adma.201504631 |
0.549 |
|
| 2015 |
Chen W, Zhao J, Zhang J, Gu L, Yang Z, Li X, Yu H, Zhu X, Yang R, Shi D, Lin X, Guo J, Bai X, Zhang G. Oxygen-assisted CVD growth of large single-crystal and high-quality monolayer MoS2. Journal of the American Chemical Society. PMID 26623946 DOI: 10.1021/Jacs.5B10519 |
0.694 |
|
| 2015 |
Li X, Lu X, Li T, Yang W, Fang J, Zhang G, Wu Y. Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride. Acs Nano. PMID 26435195 DOI: 10.1021/Acsnano.5B05283 |
0.401 |
|
| 2015 |
Zhao J, Wang G, Yang R, Lu X, Cheng M, He C, Xie G, Meng J, Shi D, Zhang G. Tunable piezoresistivity of nanographene films for strain sensing. Acs Nano. 9: 1622-9. PMID 25658857 DOI: 10.1021/Nn506341U |
0.411 |
|
| 2014 |
Wang L, Liu D, Yang S, Tian X, Zhang G, Wang W, Wang E, Xu Z, Bai X. Exotic reaction front migration and stage structure in lithiated silicon nanowires. Acs Nano. 8: 8249-54. PMID 25062355 DOI: 10.1021/Nn502621K |
0.769 |
|
| 2014 |
Chen ZG, Shi Z, Yang W, Lu X, Lai Y, Yan H, Wang F, Zhang G, Li Z. Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures. Nature Communications. 5: 4461. PMID 25034319 DOI: 10.1038/Ncomms5461 |
0.809 |
|
| 2014 |
Zhang J, Yu H, Chen W, Tian X, Liu D, Cheng M, Xie G, Yang W, Yang R, Bai X, Shi D, Zhang G. Scalable growth of high-quality polycrystalline MoS(2) monolayers on SiO(2) with tunable grain sizes. Acs Nano. 8: 6024-30. PMID 24818518 DOI: 10.1021/Nn5020819 |
0.58 |
|
| 2014 |
Ju L, Velasco J, Huang E, Kahn S, Nosiglia C, Tsai HZ, Yang W, Taniguchi T, Watanabe K, Zhang Y, Zhang G, Crommie M, Zettl A, Wang F. Photoinduced doping in heterostructures of graphene and boron nitride. Nature Nanotechnology. 9: 348-52. PMID 24727687 DOI: 10.1038/Nnano.2014.60 |
0.529 |
|
| 2014 |
Cheng M, Wang D, Sun Z, Zhao J, Yang R, Wang G, Yang W, Xie G, Zhang J, Chen P, He C, Liu D, Xu L, Shi D, Wang E, ... Zhang G, et al. A route toward digital manipulation of water nanodroplets on surfaces. Acs Nano. 8: 3955-60. PMID 24645988 DOI: 10.1021/Nn500873Q |
0.786 |
|
| 2014 |
Xie G, Yang R, Chen P, Zhang J, Tian X, Wu S, Zhao J, Cheng M, Yang W, Wang D, He C, Bai X, Shi D, Zhang G. A general route towards defect and pore engineering in graphene. Small (Weinheim An Der Bergstrasse, Germany). 10: 2280-4. PMID 24610779 DOI: 10.1002/Smll.201303671 |
0.641 |
|
| 2014 |
Meng J, Shi D, Zhang G. A review of nanographene: growth and applications Modern Physics Letters B. 28: 1430009. DOI: 10.1142/S0217984914300099 |
0.439 |
|
| 2014 |
Liu Y, Yang R, Yang H, Wang D, Zhan Q, Zhang G, Xie Y, Chen B, Li R. Anomalous anisotropic magnetoresistance effects in graphene Aip Advances. 4: 97101. DOI: 10.1063/1.4894519 |
0.42 |
|
| 2014 |
Wu S, Yang R, Cheng M, Yang W, Xie G, Chen P, Shi D, Zhang G. Defect-enhanced coupling between graphene and SiO2 substrate Applied Physics Letters. 105: 063113. DOI: 10.1063/1.4892959 |
0.465 |
|
| 2014 |
Lin J, Guo L, Jia Y, Yang R, Wu S, Huang J, Guo Y, Li Z, Zhang G, Chen X. Identification of dominant scattering mechanism in epitaxial graphene on SiC Applied Physics Letters. 104: 183102. DOI: 10.1063/1.4875384 |
0.43 |
|
| 2014 |
Shi Z, Jin C, Yang W, Ju L, Horng J, Lu X, Bechtel HA, Martin MC, Fu D, Wu J, Watanabe K, Taniguchi T, Zhang Y, Bai X, Wang E, ... Zhang G, et al. Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices Nature Physics. DOI: 10.1038/Nphys3075 |
0.815 |
|
| 2014 |
Liu D, Yang W, Zhang L, Zhang J, Meng J, Yang R, Zhang G, Shi D. Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates Carbon. 72: 387-392. DOI: 10.1016/J.Carbon.2014.02.030 |
0.407 |
|
| 2014 |
Yang R, Wu S, Wang D, Xie G, Cheng M, Wang G, Yang W, Chen P, Shi D, Zhang G. Fabrication of high-quality all-graphene devices with low contact resistances Nano Research. 7: 1449-1456. DOI: 10.1007/S12274-014-0504-1 |
0.477 |
|
| 2013 |
He C, Li J, Wu X, Chen P, Zhao J, Yin K, Cheng M, Yang W, Xie G, Wang D, Liu D, Yang R, Shi D, Li Z, Sun L, ... Zhang G, et al. Tunable electroluminescence in planar graphene/SiO(2) memristors. Advanced Materials (Deerfield Beach, Fla.). 25: 5593-8. PMID 23922289 DOI: 10.1002/Adma.201302447 |
0.411 |
|
| 2013 |
Yang W, Chen G, Shi Z, Liu CC, Zhang L, Xie G, Cheng M, Wang D, Yang R, Shi D, Watanabe K, Taniguchi T, Yao Y, Zhang Y, Zhang G. Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nature Materials. 12: 792-7. PMID 23852399 DOI: 10.1038/Nmat3695 |
0.827 |
|
| 2013 |
Yang R, Zhu C, Meng J, Huo Z, Cheng M, Liu D, Yang W, Shi D, Liu M, Zhang G. Isolated nanographene crystals for nano-floating gate in charge trapping memory. Scientific Reports. 3: 2126. PMID 23820388 DOI: 10.1038/Srep02126 |
0.336 |
|
| 2013 |
Zhao J, Zhang G, Shi D. Review of graphene-based strain sensors Chinese Physics B. 22: 057701. DOI: 10.1088/1674-1056/22/5/057701 |
0.408 |
|
| 2013 |
Chen P, Zhang G. Carbon-based spintronics Science China-Physics Mechanics & Astronomy. 56: 207-221. DOI: 10.1007/S11433-012-4970-8 |
0.34 |
|
| 2012 |
Xie G, Shi Z, Yang R, Liu D, Yang W, Cheng M, Wang D, Shi D, Zhang G. Graphene edge lithography. Nano Letters. 12: 4642-6. PMID 22888761 DOI: 10.1021/Nl301936R |
0.805 |
|
| 2012 |
Liu D, Shi Z, Zhang L, He C, Zhang J, Cheng M, Yang R, Tian X, Bai X, Shi D, Zhang G. Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer. Nanotechnology. 23: 305701. PMID 22751205 DOI: 10.1088/0957-4484/23/30/305701 |
0.781 |
|
| 2012 |
He C, Shi Z, Zhang L, Yang W, Yang R, Shi D, Zhang G. Multilevel resistive switching in planar graphene/SiO2 nanogap structures. Acs Nano. 6: 4214-21. PMID 22519726 DOI: 10.1021/Nn300735S |
0.775 |
|
| 2012 |
Yang W, He C, Zhang L, Wang Y, Shi Z, Cheng M, Xie G, Wang D, Yang R, Shi D, Zhang G. Growth, characterization, and properties of nanographene. Small (Weinheim An Der Bergstrasse, Germany). 8: 1429-35. PMID 22378609 DOI: 10.1002/Smll.201101827 |
0.766 |
|
| 2012 |
Wu S, Yang R, Shi D, Zhang G. Identification of structural defects in graphitic materials by gas-phase anisotropic etching. Nanoscale. 4: 2005-9. PMID 22318671 DOI: 10.1039/C2Nr11707J |
0.356 |
|
| 2012 |
Zhao J, He C, Yang R, Shi Z, Cheng M, Yang W, Xie G, Wang D, Shi D, Zhang G. Ultra-sensitive strain sensors based on piezoresistive nanographene films Applied Physics Letters. 101: 063112. DOI: 10.1063/1.4742331 |
0.754 |
|
| 2012 |
Zhang L, Ni M, Liu D, Shi D, Zhang G. Competitive Growth and Etching of Epitaxial Graphene The Journal of Physical Chemistry C. 116: 26929-26931. DOI: 10.1021/Jp310134G |
0.445 |
|
| 2012 |
Cheng M, Yang R, Zhang L, Shi Z, Yang W, Wang D, Xie G, Shi D, Zhang G. Restoration of graphene from graphene oxide by defect repair Carbon. 50: 2581-2587. DOI: 10.1016/J.Carbon.2012.02.016 |
0.789 |
|
| 2012 |
Zhang L, Shi Z, Liu D, Yang R, Shi D, Zhang G. Vapour-phase graphene epitaxy at low temperatures Nano Research. 5: 258-264. DOI: 10.1007/S12274-012-0205-6 |
0.801 |
|
| 2011 |
Yang R, Shi Z, Zhang L, Shi D, Zhang G. Observation of Raman g-peak split for graphene nanoribbons with hydrogen-terminated zigzag edges. Nano Letters. 11: 4083-8. PMID 21899347 DOI: 10.1021/Nl201387X |
0.755 |
|
| 2011 |
Shi Z, Yang R, Zhang L, Wang Y, Liu D, Shi D, Wang E, Zhang G. Patterning graphene with zigzag edges by self-aligned anisotropic etching. Advanced Materials (Deerfield Beach, Fla.). 23: 3061-5. PMID 21594907 DOI: 10.1002/Adma.201100633 |
0.817 |
|
| 2011 |
Wang Y, Yang R, Shi Z, Zhang L, Shi D, Wang E, Zhang G. Super-elastic graphene ripples for flexible strain sensors. Acs Nano. 5: 3645-50. PMID 21452882 DOI: 10.1021/Nn103523T |
0.817 |
|
| 2011 |
Shi Z, Lu H, Zhang L, Yang R, Wang Y, Liu D, Guo H, Shi D, Gao H, Wang E, Zhang G. Studies of graphene-based nanoelectromechanical switches Nano Research. 5: 82-87. DOI: 10.1007/S12274-011-0187-9 |
0.817 |
|
| 2010 |
Yang R, Zhang L, Wang Y, Shi Z, Shi D, Gao H, Wang E, Zhang G. An anisotropic etching effect in the graphene basal plane. Advanced Materials (Deerfield Beach, Fla.). 22: 4014-9. PMID 20683861 DOI: 10.1002/Adma.201000618 |
0.817 |
|
| 2010 |
Yang R, Huang QS, Chen XL, Zhang GY, Gao H. Substrate doping effects on Raman spectrum of epitaxial graphene on SiC Journal of Applied Physics. 107: 034305. DOI: 10.1063/1.3283922 |
0.354 |
|
| 2010 |
Zhang L, Shi Z, Wang Y, Yang R, Shi D, Zhang G. Catalyst-free growth of nanographene films on various substrates Nano Research. 4: 315-321. DOI: 10.1007/S12274-010-0086-5 |
0.785 |
|
| 2009 |
Sun X, Tabakman SM, Seo WS, Zhang L, Zhang G, Sherlock S, Bai L, Dai H. Separation of nanoparticles in a density gradient: FeCo@C and gold nanocrystals. Angewandte Chemie (International Ed. in English). 48: 939-42. PMID 19107884 DOI: 10.1002/Anie.200805047 |
0.447 |
|
| 2008 |
Chen Z, Tabakman SM, Goodwin AP, Kattah MG, Daranciang D, Wang X, Zhang G, Li X, Liu Z, Utz PJ, Jiang K, Fan S, Dai H. Protein microarrays with carbon nanotubes as multicolor Raman labels. Nature Biotechnology. 26: 1285-92. PMID 18953353 DOI: 10.1038/Nbt.1501 |
0.529 |
|
| 2008 |
Li X, Zhang G, Bai X, Sun X, Wang X, Wang E, Dai H. Highly conducting graphene sheets and Langmuir-Blodgett films. Nature Nanotechnology. 3: 538-42. PMID 18772914 DOI: 10.1038/Nnano.2008.210 |
0.811 |
|
| 2008 |
Panzer MA, Zhang G, Mann D, Hu X, Pop E, Dai H, Goodson KE. Thermal properties of metal-coated vertically aligned single-wall nanotube arrays Journal of Heat Transfer. 130. DOI: 10.1115/1.2885159 |
0.454 |
|
| 2006 |
Zhang G, Qi P, Wang X, Lu Y, Li X, Tu R, Bangsaruntip S, Mann D, Zhang L, Dai H. Selective etching of metallic carbon nanotubes by gas-phase reaction. Science (New York, N.Y.). 314: 974-7. PMID 17095698 DOI: 10.1126/Science.1133781 |
0.764 |
|
| 2006 |
Zhang G, Qi P, Wang X, Lu Y, Mann D, Li X, Dai H. Hydrogenation and hydrocarbonation and etching of single-walled carbon nanotubes. Journal of the American Chemical Society. 128: 6026-7. PMID 16669658 DOI: 10.1021/Ja061324B |
0.484 |
|
| 2005 |
Zhang G, Mann D, Zhang L, Javey A, Li Y, Yenilmez E, Wang Q, McVittie JP, Nishi Y, Gibbons J, Dai H. Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen. Proceedings of the National Academy of Sciences of the United States of America. 102: 16141-5. PMID 16263931 DOI: 10.1073/Pnas.0507064102 |
0.772 |
|
| 2004 |
Zhang G, Bai X, Jiang X, Wang E. Response to Comment on "Tubular Graphite Cones" Science. 303: 766-766. DOI: 10.1126/Science.1091130 |
0.691 |
|
| 2004 |
Zhang G, Jiang X, Wang E. Self-assembly of carbon nanohelices: Characteristics and field electron emission properties Applied Physics Letters. 84: 2646-2648. DOI: 10.1063/1.1695198 |
0.651 |
|
| 2003 |
Zhang G, Jiang X, Wang E. Tubular graphite cones. Science (New York, N.Y.). 300: 472-4. PMID 12702873 DOI: 10.1126/Science.1082264 |
0.658 |
|
| 2002 |
Pu Y, Guo Z, Kang Z, Ma J, Guan Z, Zhang G, Wang E. Comparative characterization of high-density plasma reactors using emission spectroscopy from VUV to NIR Pure and Applied Chemistry. 74: 459-464. DOI: 10.1351/Pac200274030459 |
0.628 |
|
| 2001 |
Zhong D, Liu S, Zhang G, Wang EG. Large-scale well aligned carbon nitride nanotube films: Low temperature growth and electron field emission Journal of Applied Physics. 89: 5939-5943. DOI: 10.1063/1.1370114 |
0.651 |
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