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Theodore G. Castner, Jr. - Publications

Affiliations: 
1991 Physics and Astronomy University of Rochester, Rochester, NY 
Website:
https://millerfuneralhomes.funeraltechweb.com/tribute/details/2514/Theodore-Castner-Jr/obituary.html#tribute-start
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2001 Castner TG. Comment on "Scaling of the conductivity with temperature and uniaxial stress in Si:B at the metal-insulator transition". Physical Review Letters. 87: 129701. PMID 11580565 DOI: 10.1103/PhysRevLett.87.129701  0.428
1995 Castner TG. Universality of the scaling exponents for the T=0 conductivity and Hall coefficient for very weakly compensated barely metallic silicon. Physical Review. B, Condensed Matter. 52: 12434-12438. PMID 9980387  0.403
1994 Castner TG. Critical Behavior of the Conductivity of Si:P near the Metal-Insulator Transition. Physical Review Letters. 73: 3600. PMID 10057427 DOI: 10.1103/PhysRevLett.73.3600  0.559
1993 Castner TG, Seehra MS. Critical behavior of the electron-paramagnetic-resonance linewidth of a spin-1/2 two-dimensional antiferromagnet. Physical Review. B, Condensed Matter. 47: 578-581. PMID 10004495  0.431
1990 Castner TG. Spin-orbit contribution to the Hall coefficient approaching the metal-insulator transition: An explanation for the critical behavior of Ge:Sb. Physical Review. B, Condensed Matter. 42: 5317-5319. PMID 9996097  0.511
1990 Koon DW, Castner TG. Hall effect near the metal-insulator transition. Physical Review. B, Condensed Matter. 41: 12054-12070. PMID 9993657  0.651
1989 Shafarman WN, Koon DW, Castner TG. dc conductivity of arsenic-doped silicon near the metal-insulator transition. Physical Review. B, Condensed Matter. 40: 1216-1231. PMID 9991946 DOI: 10.1103/Physrevb.40.1216  0.645
1989 Shafarman WN, Koon DW, Castner TG. Dc conductivity of arsenic-doped silicon near the metal-insulator transition Physical Review B. 40: 1216-1231. DOI: 10.1103/PhysRevB.40.1216  0.579
1988 Koon DW, Castner TG. Does the Hall coefficient exhibit critical behavior approaching the metal-insulator transition? Physical Review Letters. 60: 1755-1758. PMID 10038131 DOI: 10.1103/PhysRevLett.60.1755  0.646
1988 Migliuolo M, Castner TG. Frequency-dependent conductivity of insulating Si:P and Si:As near the metal-insulator transition. Physical Review. B, Condensed Matter. 38: 11593-11601. PMID 9946043  0.43
1987 Zarifis V, Castner TG. ESR linewidth behavior for barely metallic n-type silicon. Physical Review. B, Condensed Matter. 36: 6198-6201. PMID 9942317  0.467
1986 Deri RJ, Castner TG. Intermediate-frequency conduction in Si:As below the metal-insulator transition. Physical Review Letters. 57: 134-137. PMID 10033376 DOI: 10.1103/PhysRevLett.57.134  0.5
1986 Shafarman WN, Castner TG, Brooks JS, Martin KP, Naughton MJ. Magnetic tuning of the metal-insulator transition for uncompensated arsenic-doped silicon. Physical Review Letters. 56: 980-983. PMID 10033336 DOI: 10.1103/Physrevlett.56.980  0.456
1986 Shafarman WN, Castner TG. Critical behavior of Mott variable-range hopping in Si:As near the metal-insulator transition. Physical Review. B, Condensed Matter. 33: 3570-3572. PMID 9938756 DOI: 10.1103/Physrevb.33.3570  0.549
1986 Shafarman WN, Castner TG. Critical behavior of Mott variable-range hopping in Si:As near the metal-insulator transition Physical Review B. 33: 3570-3572. DOI: 10.1103/PhysRevB.33.3570  0.386
1963 Castner TG. Raman Spin-Lattice Relaxation of Shallow Donors in Silicon Physical Review. 130: 58-75. DOI: 10.1103/Physrev.130.58  0.314
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