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Guoyun Gao - Publications

Affiliations: 
2019- Department of Chemistry City University of Hong Kong, Kowloon, Hong Kong 
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Zou D, He Z, Chen M, Yan L, Guo Y, Gao G, Li C, Piao Y, Cheng X, Chan PKL. Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping. Advanced Materials (Deerfield Beach, Fla.). e2211600. PMID 36841244 DOI: 10.1002/adma.202211600  0.438
2022 Yang P, Zha J, Gao G, Zheng L, Huang H, Xia Y, Xu S, Xiong T, Zhang Z, Yang Z, Chen Y, Ki DK, Liou JJ, Liao W, Tan C. Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility. Nano-Micro Letters. 14: 109. PMID 35441245 DOI: 10.1007/s40820-022-00852-2  0.409
2021 Yu J, Yang X, Gao G, Xiong Y, Wang Y, Han J, Chen Y, Zhang H, Sun Q, Wang ZL. Bioinspired mechano-photonic artificial synapse based on graphene/MoS heterostructure. Science Advances. 7. PMID 33731346 DOI: 10.1126/sciadv.abd9117  0.273
2021 Yu J, Gao G, Huang J, Yang X, Han J, Zhang H, Chen Y, Zhao C, Sun Q, Wang ZL. Contact-electrification-activated artificial afferents at femtojoule energy. Nature Communications. 12: 1581. PMID 33707420 DOI: 10.1038/s41467-021-21890-1  0.292
2020 Hua Q, Gao G, Jiang C, Yu J, Sun J, Zhang T, Gao B, Cheng W, Liang R, Qian H, Hu W, Sun Q, Wang ZL, Wu H. Atomic threshold-switching enabled MoS transistors towards ultralow-power electronics. Nature Communications. 11: 6207. PMID 33277501 DOI: 10.1038/s41467-020-20051-0  0.436
2020 Zhang H, Yu J, Yang X, Gao G, Qin S, Sun J, Ding M, Jia C, Sun Q, Wang ZL. Ion Gel Capacitively-Coupled Tribotronic Gating for Multi-Parameter Distance Sensing. Acs Nano. PMID 32058695 DOI: 10.1021/Acsnano.9B09549  0.433
2020 Yang X, Yu J, Zhao J, Chen Y, Gao G, Wang Y, Sun Q, Wang ZL. Mechanoplastic Tribotronic Floating‐Gate Neuromorphic Transistor Advanced Functional Materials. 30: 2002506. DOI: 10.1002/Adfm.202002506  0.443
2019 Chen Y, Gao G, Zhao J, Zhang H, Yu J, Yang X, Zhang Q, Zhang W, Xu S, Sun J, Meng Y, Sun Q. Piezotronic Graphene Artificial Sensory Synapse Advanced Functional Materials. 29: 1900959. DOI: 10.1002/Adfm.201900959  0.266
2019 Yang X, Hu G, Gao G, Chen X, Sun J, Wan B, Zhang Q, Qin S, Zhang W, Pan C, Sun Q, Wang ZL. Coupled Ion‐Gel Channel‐Width Gating and Piezotronic Interface Gating in ZnO Nanowire Devices Advanced Functional Materials. 29: 1807837. DOI: 10.1002/Adfm.201807837  0.387
2018 Gao G, Yu J, Yang X, Pang Y, Zhao J, Pan C, Sun Q, Wang ZL. Triboiontronic Transistor of MoS. Advanced Materials (Deerfield Beach, Fla.). e1806905. PMID 30589132 DOI: 10.1002/Adma.201806905  0.477
2018 Zhao J, Wei Z, Zhang Q, Yu H, Wang S, Yang X, Gao G, Qin S, Zhang G, Sun Q, Wang ZL. Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS2 Field Effect Transistor. Acs Nano. PMID 30563324 DOI: 10.1021/Acsnano.8B07477  0.449
2018 Liu X, Liang R, Gao G, Pan C, Jiang C, Xu Q, Luo J, Zou X, Yang Z, Liao L, Wang ZL. MoS Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit. Advanced Materials (Deerfield Beach, Fla.). e1800932. PMID 29782679 DOI: 10.1002/Adma.201800932  0.475
2018 Wang L, Liu S, Gao G, Pang Y, Yin X, Feng X, Zhu L, Bai Y, Chen L, Xiao T, Wang X, Qin Y, Wang ZL. Ultrathin Piezotronic Transistors with 2-Nanometer Channel Lengths. Acs Nano. PMID 29701956 DOI: 10.1021/Acsnano.8B01957  0.423
2018 Gao G, Wan B, Liu X, Sun Q, Yang X, Wang L, Pan C, Wang ZL. Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus. Advanced Materials (Deerfield Beach, Fla.). PMID 29436069 DOI: 10.1002/Adma.201705088  0.466
2018 Huo Z, Peng Y, Zhang Y, Gao G, Wan B, Wu W, Yang Z, Wang X, Pan C. Recent Advances in Large-Scale Tactile Sensor Arrays Based on a Transistor Matrix Advanced Materials Interfaces. 5: 1801061. DOI: 10.1002/ADMI.201801061  0.224
2017 Zhang K, Peng M, Wu W, Guo J, Gao G, Liu Y, Kou J, Wen R, Lei Y, Yu A, Zhang Y, Zhai J, Wang ZL. A flexible p-CuO/n-MoS2 heterojunction photodetector with enhanced photoresponse by the piezo-phototronic effect Materials Horizons. 4: 274-280. DOI: 10.1039/C6Mh00568C  0.414
2016 Liu X, Yang X, Gao G, Yang Z, Liu H, Li Q, Lou Z, Shen G, Liao L, Pan C, Wang ZL. Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistor by Piezo-Phototronic Effect from GaN Nanowire. Acs Nano. PMID 27447946 DOI: 10.1021/Acsnano.6B01839  0.462
2016 Xue F, Chen L, Chen J, Liu J, Wang L, Chen M, Pang Y, Yang X, Gao G, Zhai J, Wang ZL. p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect. Advanced Materials (Deerfield Beach, Fla.). PMID 26936489 DOI: 10.1002/Adma.201506472  0.393
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