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Abdul Kadir - Publications

Affiliations: 
2004-2009 Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research, Mumbai, Maharashtra, India 
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Zhang L, Lee KH, Kadir A, Wang Y, Lee KE, Tan CS, Chua SJ, Fitzgerald EA. Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding Japanese Journal of Applied Physics. 57: 51002. DOI: 10.7567/Jjap.57.051002  0.432
2018 Kadir A, Srivastava S, Li Z, Lee KEK, Sasangka WA, Gradecak S, Chua SJ, Fitzgerald EA. Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate Thin Solid Films. 663: 73-78. DOI: 10.1016/J.Tsf.2018.08.011  0.497
2017 Zhang L, Lee KH, Riko IM, Huang C, Kadir A, Lee KE, Chua SJ, Fitzgerald EA. MOCVD growth of GaN on SEMI-spec 200 mm Si Semiconductor Science and Technology. 32: 65001. DOI: 10.1088/1361-6641/Aa681C  0.345
2017 Kok IJY, Soh CB, Sang NX, Lee TH, Kadir A, Chua SJ. Regrowth of GaN on Strain-relief porous GaN template fabricated by Anodized Alumina Oxide mask Procedia Engineering. 215: 1-8. DOI: 10.1016/J.Proeng.2017.12.145  0.433
2015 Kadir A, Huang CC, Lee KEK, Fitzgerald EA, Chua SJ. Response to “Comment on ‘Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system’” [Appl. Phys. Lett. 106, 176101 (2015)] Applied Physics Letters. 106: 176102. DOI: 10.1063/1.4919596  0.391
2015 Hatui N, Frentrup M, Rahman AA, Kadir A, Subramanian S, Kneissl M, Bhattacharya A. MOVPE growth of semipolar (112¯2) Al1-xInxN across the alloy composition range (0 ≤ x ≤ 0.55) Journal of Crystal Growth. 411: 106-109. DOI: 10.1016/J.Jcrysgro.2014.11.016  0.744
2014 Kadir A, Huang CC, Lee KEK, Fitzgerald EA, Chua SJ. Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system Applied Physics Letters. 105: 232113. DOI: 10.1063/1.4904007  0.414
2013 Pristovsek M, Kadir A, Kneissl M. Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jb23  0.355
2013 Pristovsek M, Kadir A, Meissner C, Schwaner T, Leyer M, Stellmach J, Kneissl M, Ivaldi F, Kret S. Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Journal of Crystal Growth. 372: 65-72. DOI: 10.1016/J.Jcrysgro.2013.03.012  0.471
2012 De S, Layek A, Bhattacharya S, Kumar Das D, Kadir A, Bhattacharya A, Dhar S, Chowdhury A. Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4754079  0.615
2012 Kadir A, Bellmann K, Simoneit T, Pristovsek M, Kneissl M. Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE Physica Status Solidi (a). 209: 2487-2491. DOI: 10.1002/Pssa.201228238  0.384
2011 Pristovsek M, Kadir A, Meissner C, Schwaner T, Leyer M, Kneissl M. Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy Journal of Applied Physics. 110: 73527. DOI: 10.1063/1.3647782  0.423
2011 Kadir A, Meissner C, Schwaner T, Pristovsek M, Kneissl M. Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy Journal of Crystal Growth. 334: 40-45. DOI: 10.1016/J.Jcrysgro.2011.08.003  0.477
2011 Laskar MR, Ganguli T, Kadir A, Hatui N, Rahman AA, Shah AP, Gokhale MR, Bhattacharya A. Influence of buffer layers on the microstructure of MOVPE grown a-plane InN Journal of Crystal Growth. 315: 233-237. DOI: 10.1016/J.Jcrysgro.2010.08.019  0.71
2011 De S, Layek A, Raja A, Kadir A, Gokhale MR, Bhattacharya A, Dhar S, Chowdhury A. Light-Emitting Diodes: Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes (Adv. Funct. Mater. 20/2011) Advanced Functional Materials. 21: 3827-3827. DOI: 10.1002/Adfm.201190086  0.563
2011 De S, Layek A, Raja A, Kadir A, Gokhale MR, Bhattacharya A, Dhar S, Chowdhury A. Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes Advanced Functional Materials. 21: 3828-3835. DOI: 10.1002/Adfm.201100894  0.644
2010 Laskar MR, Kadir A, Rahman AA, Shah AP, Hatui N, Gokhale MR, Bhattacharya A. Optimizationof a-plane (11̄2 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1̄1 02) sapphire Journal of Crystal Growth. 312: 2033-2037. DOI: 10.1016/J.Jcrysgro.2010.03.042  0.707
2010 Kadir A, Ganguli T, Gokhale MR, Shah AP, Bhattacharya A. The role of InGaN interlayers on the microstructure of InN epilayers grown via metal organic vapour phase epitaxy Physica Status Solidi (a) Applications and Materials Science. 207: 1070-1073. DOI: 10.1002/Pssa.200983113  0.701
2008 Bansal B, Kadir A, Bhattacharya A, Moshchalkov V. Photoluminescence from localized states in disordered indium nitride Applied Physics Letters. 93: 21113. DOI: 10.1063/1.2959185  0.584
2008 Kadir A, Mukhopadhyay S, Ganguli T, Galande C, Gokhale M, Arora B, Raychaudhuri P, Bhattacharya A. Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide Solid State Communications. 146: 361-364. DOI: 10.1016/J.Ssc.2008.04.002  0.593
2008 Kadir A, Gokhale MR, Bhattacharya A, Pretorius A, Rosenauer A. MOVPE growth and characterization of InN/GaN single and multi-quantum well structures Journal of Crystal Growth. 311: 95-98. DOI: 10.1016/J.Jcrysgro.2008.10.056  0.634
2008 Lobo N, Kadir A, Laskar MR, Shah AP, Gokhale MR, Rahman AA, Arora BM, Narasimhan KL, Bhattacharya A. Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy Journal of Crystal Growth. 310: 4747-4750. DOI: 10.1016/J.Jcrysgro.2008.08.022  0.725
2008 Ganguli T, Kadir A, Gokhale M, Kumar R, Shah AP, Arora BM, Bhattacharya A. Microstructure of InN epilayers deposited in a close-coupled showerhead reactor Journal of Crystal Growth. 310: 4942-4946. DOI: 10.1016/J.Jcrysgro.2008.08.007  0.644
2008 Mahmood ZH, Shah AP, Kadir A, Gokhale MR, Bhattacharya A, Arora BM. Charge deep level transient spectroscopy of electron traps in MOVPE grown n-GaN on sapphire Physica Status Solidi (B) Basic Research. 245: 2567-2571. DOI: 10.1002/Pssb.200844243  0.61
2007 Mahmood ZH, Shah AP, Kadir A, Gokhale MR, Ghosh S, Bhattacharya A, Arora BM. Determination of InN-GaN heterostructure band offsets from internal photoemission measurements Applied Physics Letters. 91. DOI: 10.1063/1.2794788  0.603
2007 Kadir A, Ganguli T, Kumar R, Gokhale MR, Shah AP, Ghosh S, Arora BM, Bhattacharya A. The role of hydrostatic stress in determining the bandgap of InN epilayers Applied Physics Letters. 91: 111913. DOI: 10.1063/1.2784199  0.619
2007 Kadir A, Ganguli T, Gokhale MR, Shah AP, Chandvankar SS, Arora BM, Bhattacharya A. Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor Journal of Crystal Growth. 298: 403-408. DOI: 10.1016/J.Jcrysgro.2006.10.078  0.705
2006 Bansal B, Kadir A, Bhattacharya A, Arora BM, Bhat R. Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells Applied Physics Letters. 89: 32110. DOI: 10.1063/1.2227618  0.606
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