Year |
Citation |
Score |
2015 |
Greck P, Birner S, Huber B, Vogl P. Efficient method for the calculation of dissipative quantum transport in quantum cascade lasers. Optics Express. 23: 6587-600. PMID 25836876 DOI: 10.1364/Oe.23.006587 |
0.745 |
|
2011 |
Kubis T, Vogl P. Assessment of approximations in nonequilibrium Green’s function theory Physical Review B. 83: 195304. DOI: 10.1103/Physrevb.83.195304 |
0.382 |
|
2010 |
Roloff R, Eissfeller T, Vogl P, Pötz W. Electric g tensor control and spin echo of a hole-spin qubit in a quantum dot molecule New Journal of Physics. 12: 93012. DOI: 10.1088/1367-2630/12/9/093012 |
0.368 |
|
2010 |
Deutsch C, Benz A, Detz H, Klang P, Nobile M, Andrews AM, Schrenk W, Kubis T, Vogl P, Strasser G, Unterrainer K. Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP Applied Physics Letters. 97. DOI: 10.1063/1.3532106 |
0.427 |
|
2010 |
Vogl P, Kubis T. The non-equilibrium Green's function method: an introduction Journal of Computational Electronics. 9: 237-242. DOI: 10.1007/S10825-010-0313-Z |
0.417 |
|
2009 |
Kubis T, Vogl P. Predictive quantum theory of current and optical gain in quantum cascade lasers Laser Physics. 19: 762-765. DOI: 10.1134/S1054660X0904032X |
0.487 |
|
2009 |
Andlauer T, Vogl P. Full-band envelope-function approach for type-II broken-gap superlattices Physical Review B. 80: 35304. DOI: 10.1103/Physrevb.80.035304 |
0.404 |
|
2009 |
Kubis T, Yeh CY, Vogl P, Benz A, Fasching G, Deutsch C. Theory of nonequilibrium quantum transport and energy dissipation in terahertz quantum cascade lasers Physical Review B. 79: 195323. DOI: 10.1103/Physrevb.79.195323 |
0.503 |
|
2009 |
Andlauer T, Vogl P. Electrically controllable g tensors in quantum dot molecules Physical Review B. 79: 45307. DOI: 10.1103/Physrevb.79.045307 |
0.42 |
|
2009 |
Schindler C, Vogl P. Prediction of giant intrinsic spin-Hall effect in strained p-GaAs quantum wells Journal of Physics: Conference Series. 193: 012103. DOI: 10.1088/1742-6596/193/1/012103 |
0.319 |
|
2009 |
Kubis T, Vogl P. How periodic are terahertz quantum cascade lasers? Journal of Physics: Conference Series. 193: 012063. DOI: 10.1088/1742-6596/193/1/012063 |
0.304 |
|
2009 |
Yasuda H, Kubis T, Vogl P, Sekine N, Hosako I, Hirakawa K. Nonequilibrium Green’s function calculation for four-level scheme terahertz quantum cascade lasers Applied Physics Letters. 94: 151109. DOI: 10.1063/1.3119312 |
0.405 |
|
2009 |
Birner S, Schindler C, Greck P, Sabathil M, Vogl P. Ballistic quantum transport using the contact block reduction (CBR) method Journal of Computational Electronics. 8: 267-286. DOI: 10.1007/S10825-009-0293-Z |
0.741 |
|
2008 |
Andlauer T, Morschl R, Vogl P. Gauge-invariant discretization in multiband envelope function theory and g factors in nanowire dots Physical Review B. 78: 75317. DOI: 10.1103/Physrevb.78.075317 |
0.371 |
|
2008 |
Birner S, Uhl C, Bayer M, Vogl P. Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor Journal of Physics: Conference Series. 107. DOI: 10.1088/1742-6596/107/1/012002 |
0.647 |
|
2008 |
Kubis T, Yeh C, Vogl P. Non-equilibrium quantum transport theory: current and gain in quantum cascade lasers Journal of Computational Electronics. 7: 432-435. DOI: 10.1007/S10825-007-0158-2 |
0.554 |
|
2008 |
Kubis T, Vogl P. Microscopic theory of spin‐filtering in non‐magnetic semiconductor nanostructures Physica Status Solidi (C). 5: 290-293. DOI: 10.1002/Pssc.200776593 |
0.335 |
|
2008 |
Kubis T, Yeh C, Vogl P. Quantum theory of transport and optical gain in quantum cascade lasers Physica Status Solidi (C). 5: 232-235. DOI: 10.1002/Pssc.200776591 |
0.5 |
|
2007 |
Birner S, Zibold T, Andlauer T, Kubis T, Sabathil M, Trellakis A, Vogl P. Nextnano: General purpose 3-D simulations Ieee Transactions On Electron Devices. 54: 2137-2142. DOI: 10.1109/Ted.2007.902871 |
0.762 |
|
2007 |
Zibold T, Vogl P, Bertoni A. Theory of semiconductor quantum-wire-based single- and two-qubit gates Physical Review B. 76: 195301. DOI: 10.1103/Physrevb.76.195301 |
0.529 |
|
2007 |
Kubis T, Vogl P. Self-consistent quantum transport theory: Applications and assessment of approximate models Journal of Computational Electronics. 6: 183-186. DOI: 10.1007/S10825-006-0078-6 |
0.516 |
|
2006 |
Birner S, Hackenbuchner S, Sabathil M, Zandler G, Majewski JA, Andlauer T, Zibold T, Morschl R, Trellakis A, Vogl P. Modeling of Semiconductor Nanostructures with nextnano 3 Acta Physica Polonica A. 110: 111-124. DOI: 10.12693/Aphyspola.110.111 |
0.764 |
|
2006 |
Trellakis A, Zibold T, Andlauer T, Birner S, Smith RK, Morschl R, Vogl P. The 3D nanometer device project nextnano: Concepts, methods, results Journal of Computational Electronics. 5: 285-289. DOI: 10.1007/S10825-006-0005-X |
0.737 |
|
2005 |
Mamaluy D, Vasileska D, Sabathil M, Zibold T, Vogl P. Contact block reduction method for ballistic transport and carrier densities of open nanostructures Physical Review B. 71. DOI: 10.1103/Physrevb.71.245321 |
0.53 |
|
2005 |
Bayer M, Uhl C, Vogl P. Theoretical study of electrolyte gate AlGaN/GaN field effect transistors Journal of Applied Physics. 97. DOI: 10.1063/1.1847730 |
0.379 |
|
2004 |
Povolotskyi M, Carlo AD, Lugli P, Birner S, Vogl P. Tuning the piezoelectric fields in quantum dots: microscopic description of dots grown on (N11) surfaces Ieee Transactions On Nanotechnology. 3: 124-128. DOI: 10.1109/Tnano.2003.820819 |
0.741 |
|
2004 |
Finley JJ, Sabathil M, Vogl P, Abstreiter G, Oulton R, Tartakovskii AI, Mowbray DJ, Skolnick MS, Liew SL, Cullis AG, Hopkinson M. Quantum-confined Stark shifts of charged exciton complexes in quantum dots Physical Review B. 70: 201308. DOI: 10.1103/Physrevb.70.201308 |
0.489 |
|
2004 |
Podolskiy AV, Vogl P. Compact expression for the angular dependence of tight-binding Hamiltonian matrix elements Physical Review B. 69: 233101. DOI: 10.1103/Physrevb.69.233101 |
0.325 |
|
2004 |
Povolotskyi M, Gleize J, Carlo AD, Lugli P, Birner S, Vogl P, Alderighi D, Gurioli M, Vinattieri A, Colocci M, Sanguinetti S, Nötzel RR. Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/116 |
0.741 |
|
2004 |
Sabathil M, Mamaluy D, Vogl P. Prediction of a realistic quantum logic gate using the contact block reduction method Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/048 |
0.517 |
|
2004 |
Mamaluy D, Mannargudi A, Vasileska D, Sabathil M, Vogl P. Contact block reduction method and its application to a 10 nm MOSFET device Semiconductor Science and Technology. 19: S118-S121. DOI: 10.1088/0268-1242/19/4/042 |
0.416 |
|
2004 |
Bougeard D, Tan P, Sabathil M, Vogl P, Abstreiter G, Brunner K. Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 21: 312-316. DOI: 10.1016/J.PHYSE.2003.11.019 |
0.32 |
|
2004 |
Finley JJ, Sabathil M, Oulton R, Tartakovskii AI, Mowbray DJ, Skolnick MS, Liew S, Migliorato M, Hopkinson M, Vogl P. Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots Physica E-Low-Dimensional Systems & Nanostructures. 21: 199-203. DOI: 10.1016/J.Physe.2003.11.006 |
0.492 |
|
2004 |
Majewski JA, Hackenbuchner S, Zandler G, Vogl P. Nitride heterostructures: a system for high frequency electronics Computational Materials Science. 30: 81-91. DOI: 10.1016/J.Commatsci.2004.01.013 |
0.426 |
|
2004 |
Schuster R, Hajak H, Reinwald M, Wegscheider W, Schedelbeck G, Sedlmaier S, Stopa M, Birner S, Vogl P, Bauer J, Schuh D, Bichler M, Abstreiter G. Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth Physica Status Solidi (C). 1: 2028-2055. DOI: 10.1002/Pssc.200404762 |
0.747 |
|
2004 |
Majewski JA, Birner S, Trellakis A, Sabathil M, Vogl P. Advances in the theory of electronic structure of semiconductors Physica Status Solidi C: Conferences. 1: 2003-2027. DOI: 10.1002/Pssc.200404761 |
0.694 |
|
2003 |
Mamaluy D, Sabathil M, Vogl P. Efficient method for the calculation of ballistic quantum transport Journal of Applied Physics. 93: 4628-4633. DOI: 10.1063/1.1560567 |
0.429 |
|
2003 |
Povolotskyi M, Gleize J, Carlo AD, Lugli P, Birner S, Vogl P. Microscopic Description of Nanostructures Grown on (N11) Surfaces Journal of Computational Electronics. 2: 275-279. DOI: 10.1023/B:Jcel.0000011437.52664.B7 |
0.739 |
|
2003 |
Sabathil M, Birner S, Mamaluy D, Vogl P. Efficient Computational Method for Ballistic Currents and Application to Single Quantum Dots Journal of Computational Electronics. 2: 269-273. DOI: 10.1023/B:Jcel.0000011436.86455.38 |
0.758 |
|
2003 |
Sabathil M, Hackenbuchner S, Birner S, Majewski JA, Vogl P, Finley JJ. Theory of vertical and lateral Stark shifts of excitons in quantum dots Physica Status Solidi (C). 1181-1184. DOI: 10.1002/Pssc.200303034 |
0.743 |
|
2002 |
Morifuji M, Imai T, Hamaguchi C, Carlo AD, Vogl P, Böhm G, Tränkle G, Weimann G. Resonant effect of Zener tunneling current Physical Review B. 65: 233308. DOI: 10.1103/Physrevb.65.233308 |
0.409 |
|
2002 |
Majewski JA, Zandler G, Vogl P. Heterostructure field effect transistors based on nitride interfaces Journal of Physics: Condensed Matter. 14: 3511-3522. DOI: 10.1088/0953-8984/14/13/309 |
0.413 |
|
2002 |
Sabathil M, Hackenbuchner S, Majewski JA, Zandler G, Vogl P. Towards Fully Quantum Mechanical 3D Device Simulations Journal of Computational Electronics. 1: 81-85. DOI: 10.1023/A:1020719928653 |
0.581 |
|
2002 |
Imai T, Morifuji M, Hamaguchi C, Vogl P, Böhm G, Tränkle G, Weimann G. Breakdown of optical selection rules in a highly biased quantum well Physica E-Low-Dimensional Systems & Nanostructures. 13: 481-484. DOI: 10.1016/S1386-9477(02)00175-3 |
0.418 |
|
2002 |
Sacconi F, Povolotskyi M, Carlo AD, Lugli P, Städele M, Strahberger CG, Vogl P. Full-band approaches for the quantum treatment of nanometer-scale MOS structures Physica B-Condensed Matter. 314: 345-349. DOI: 10.1016/S0921-4526(01)01388-6 |
0.509 |
|
2002 |
Suzumura N, Yamaguchi M, Sawaki N, Vogl P. Inter- and intra-subband LO phonon emission rates in GaAs/AlGaAs quantum disks Physica B-Condensed Matter. 314: 127-131. DOI: 10.1016/S0921-4526(01)01364-3 |
0.465 |
|
2002 |
Hackenbuchner S, Sabathil M, Majewski JA, Zandler G, Vogl P, Beham E, Zrenner A, Lugli P. Nonequilibrium band structure of nano-devices Physica B-Condensed Matter. 314: 145-149. DOI: 10.1016/S0921-4526(01)01345-X |
0.527 |
|
2002 |
Vogl P, Strahberger C. Self‐Similar Optical Absorption Spectra in High Magnetic Fields Physica Status Solidi B-Basic Solid State Physics. 234: 472-477. DOI: 10.1002/1521-3951(200211)234:1<472::Aid-Pssb472>3.0.Co;2-J |
0.413 |
|
2001 |
Majewski JA, Zandler G, Vogl P. Bands, Bonds, and Polarizations in Nitrides - from Electronic Orbitals to Electronic Devices Acta Physica Polonica A. 100: 249-260. DOI: 10.12693/Aphyspola.100.249 |
0.317 |
|
2001 |
Hackenbuchner S, Majewski JA, Zandler G, Vogl P. Polarization induced 2D hole gas in GaN/AlGaN heterostructures Journal of Crystal Growth. 230: 607-610. DOI: 10.1016/S0022-0248(01)01256-8 |
0.368 |
|
2000 |
Hackenbuchner S, Majewski JA, Zandler G, Ambacher O, Vogl P. Polarization induced 2D hole gas in GaN/AlGaN heterostructures Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.35 |
0.385 |
|
2000 |
Moukara M, Städele M, Majewski JA, Vogl P, Görling A. Norm-conserving pseudopotentials in the exact-exchange Kohn-Sham formalism Journal of Physics: Condensed Matter. 12: 6783-6798. DOI: 10.1088/0953-8984/12/30/309 |
0.363 |
|
2000 |
Majewski JA, Zandler G, Vogl P. Novel Nitride Devices Based on Polarization Fields Physica Status Solidi (a). 179: 285-293. DOI: 10.1002/1521-396X(200005)179:1<285::Aid-Pssa285>3.0.Co;2-B |
0.401 |
|
1999 |
Hansen U, Vogl P, Fiorentini V. Quasiharmonic versus exact surface free energies of Al: A systematic study employing a classical interatomic potential Physical Review B. 60: 5055-5064. DOI: 10.1103/Physrevb.60.5055 |
0.312 |
|
1999 |
Städele M, Moukara M, Majewski JA, Vogl P, Görling A. Exact exchange Kohn-Sham formalism applied to semiconductors Physical Review B. 59: 10031-10043. DOI: 10.1103/Physrevb.59.10031 |
0.389 |
|
1999 |
Strahberger C, Vogl P. Theoretical insights into CoSi2/CaF2 tunneling diodes Physica B-Condensed Matter. 272: 160-162. DOI: 10.1016/S0921-4526(99)00261-6 |
0.361 |
|
1998 |
Zandler G, Oberhuber R, Liebig D, Vogl P, Saraniti M, Lugli P. Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes Vlsi Design. 8: 93-98. DOI: 10.1155/1998/39048 |
0.381 |
|
1998 |
Oberhuber R, Zandler G, Vogl P. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s Physical Review B. 58: 9941-9948. DOI: 10.1103/Physrevb.58.9941 |
0.369 |
|
1998 |
Majewski JA, Zandler G, Vogl P. Stability and band offsets of AlN/GaN heterostructures: impact on device performance Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/027 |
0.397 |
|
1998 |
Oberhuber R, Zandler G, Vogl P. Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors Applied Physics Letters. 73: 818-820. DOI: 10.1063/1.122011 |
0.448 |
|
1997 |
Vogl P, Graf M, Görling A. Let there be Light in Tight Binding Mrs Proceedings. 491: 241. DOI: 10.1557/Proc-491-241 |
0.332 |
|
1997 |
Städele M, Majewski JA, Vogl P, Görling A. Exact Kohn-Sham Exchange Potential in Semiconductors Physical Review Letters. 79: 2089-2092. DOI: 10.1103/Physrevlett.79.2089 |
0.36 |
|
1997 |
Städele M, Majewski JA, Vogl P. Stability And Band Offsets Of Polar Gan/Sic(001) And Aln/Sic(001) Interfaces Physical Review B. 56: 6911-6920. DOI: 10.1103/Physrevb.56.6911 |
0.353 |
|
1997 |
Carlo AD, Lugli P, Vogl P. Enhanced Zener tunneling in silicon Solid State Communications. 101: 921-923. DOI: 10.1016/S0038-1098(96)00756-9 |
0.356 |
|
1997 |
Di Carlo A, Lugli P, Kavokin A, Vladimirova M, Vogl P. Enhanced Coherent Zener Tunneling in Indirect Gap Semiconductors Physica Status Solidi (B). 204: 420-422. DOI: 10.1002/1521-3951(199711)204:1<420::Aid-Pssb420>3.0.Co;2-I |
0.428 |
|
1997 |
Zandler G, Majewski JA, Städele M, Vogl P, Compagnone F. Prospects of Ga/In/Al–N Nanometer Devices: Electronic Structure, Scattering Rates, and High Field Transport Physica Status Solidi B-Basic Solid State Physics. 204: 133-135. DOI: 10.1002/1521-3951(199711)204:1<133::Aid-Pssb133>3.0.Co;2-E |
0.339 |
|
1996 |
Graf M, Vogl P, Dzyubenko AB. Theory of electronic and optical properties of magnetoexcitons in quantum-well wires. Physical Review. B, Condensed Matter. 54: 17003-17011. PMID 9985832 DOI: 10.1103/physrevb.54.17003 |
0.363 |
|
1996 |
Majewski JA, Städele M, Vogl P. Stability and Band Offsets of SiC/GaN, SiC/AlN, and AlN/GaN Heterostructures Mrs Proceedings. 449. DOI: 10.1557/Proc-449-917 |
0.34 |
|
1996 |
Majewski JA, Städele M, Vogl P. Electronic Structure of Biaxially-Strained Wurtzite Crystals GaN and AlN Mrs Proceedings. 449: 887. DOI: 10.1557/Proc-449-887 |
0.362 |
|
1996 |
Saraniti M, Rein A, Zandler G, Vogl P, Lugli P. An efficient multigrid Poisson solver for device simulations Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 15: 141-150. DOI: 10.1109/43.486661 |
0.385 |
|
1996 |
Reigrotzki M, Redmer R, Lee I, Pennathur SS, Dür M, Wager JF, Goodnick SM, Vogl P, Eckstein H, Schattke W. Impact ionization rate and high-field transport in ZnS with nonlocal band structure Journal of Applied Physics. 80: 5054-5060. DOI: 10.1063/1.363550 |
0.369 |
|
1996 |
Nagasawa H, Murayama K, Morifuji M, Carlo AD, Vogl P, Böhm G, Tränkle G, Weimann G, Hamaguchi C. Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode Physica B-Condensed Matter. 227: 206-209. DOI: 10.1016/0921-4526(96)00400-0 |
0.359 |
|
1996 |
Nagasawa H, Murayama K, Yamaguchi M, Morifuji M, Hamaguchi C, Carlo AD, Vogl P, Böhm G, Tränkle G, Weimann G. Wannier-Stark oscillations in Zener tunneling currents Solid-State Electronics. 40: 245-247. DOI: 10.1016/0038-1101(95)00258-8 |
0.438 |
|
1996 |
Murayama K, Nagasawa H, Ozaki S, Morifuji M, Hamaguchi C, Carlo AD, Vogl P, Böhm G, Weimann G. Wannier–Stark resonances in Zener tunneling diodes with GaAs/AlAs superlattices Superlattices and Microstructures. 20: 493-498. DOI: 10.1006/Spmi.1996.0106 |
0.406 |
|
1995 |
Ambrosch-Draxl C, Majewski JA, Vogl P, Leising G. First-principles studies of the structural and optical properties of crystalline poly(para-phenylene). Physical Review. B, Condensed Matter. 51: 9668-9676. PMID 9977632 DOI: 10.1103/Physrevb.51.9668 |
0.352 |
|
1995 |
Städele M, Majewski JA, Vogl P. Stability and Band Offsets of Heterovalent SiC/GaN Interfaces Acta Physica Polonica A. 88: 917-920. DOI: 10.12693/Aphyspola.88.917 |
0.306 |
|
1995 |
Hamaguchi C, Yamaguchi M, Nagasawa H, Morifuji M, Carlo AD, Vogl P, Böhm G, Tränkle G, Weimann G, Nishikawa Y, Muto S. Wannier-Stark Localization in Superlattices Japanese Journal of Applied Physics. 34: 4519-4521. DOI: 10.1143/Jjap.34.4519 |
0.449 |
|
1994 |
Di Carlo A, Vogl P, Pötz W. Theory of Zener tunneling and Wannier-Stark states in semiconductors. Physical Review. B, Condensed Matter. 50: 8358-8377. PMID 9974855 DOI: 10.1103/Physrevb.50.8358 |
0.42 |
|
1994 |
Zandler G, Carlo AD, Vogl P, Lugli P. Monte Carlo simulation of minority carrier transport and light emission phenomena in GaAs devices Semiconductor Science and Technology. 9: 666-670. DOI: 10.1088/0268-1242/9/5S/071 |
0.387 |
|
1994 |
Carlo AD, Vogl P. Theory of Zener tunnelling and Stark ladders in semiconductors Semiconductor Science and Technology. 9: 497-499. DOI: 10.1088/0268-1242/9/5S/026 |
0.403 |
|
1993 |
Rieger MM, Vogl P. Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates. Physical Review. B, Condensed Matter. 48: 14276-14287. PMID 10007844 DOI: 10.1103/Physrevb.48.14276 |
0.306 |
|
1993 |
Zandler G, Carlo AD, Kometer K, Lugli P, Vogl P, Gornik E. A comparison of Monte Carlo and cellular automata approaches for semiconductor device simulation Ieee Electron Device Letters. 14: 77-79. DOI: 10.1109/55.215114 |
0.317 |
|
1993 |
Vogl P, Rieger MM, Majewski JA, Abstreiter G. How to convert group-IV semiconductors into light emitters Physica Scripta. 1993: 476-482. DOI: 10.1088/0031-8949/1993/T49B/017 |
0.38 |
|
1992 |
Gavrilenko V, Vogl P, Koch F. Calculation of the Energy Spectrum of NANÖ-Meter-Sized Silicon Mrs Proceedings. 283: 431. DOI: 10.1557/Proc-283-431 |
0.357 |
|
1992 |
Wirner C, Witzany M, Kiener C, Zandler G, Bohm G, Gornik E, Vogl P, Weimann G. Experimental and theoretical investigation of the drift velocity and velocity distribution function in GaAs/AlGaAs heterostructures Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/065 |
0.359 |
|
1992 |
Liebig D, Lugli P, Vogl P, Claassen M, Harth W. Tunneling and ionization phenomena in GaAs pin diodes Microelectronic Engineering. 19: 127-130. DOI: 10.1016/0167-9317(92)90406-H |
0.31 |
|
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