| Year |
Citation |
Score |
| 2024 |
Abidi IH, Bhoriya A, Vashishtha P, Giridhar SP, Mayes ELH, Sehrawat M, Verma AK, Aggarwal V, Gupta T, Singh HK, Ahmed T, Dilawar Sharma N, Walia S. Oxidation-induced modulation of photoresponsivity in monolayer MoS with sulfur vacancies. Nanoscale. PMID 39373317 DOI: 10.1039/d4nr02518k |
0.412 |
|
| 2020 |
Ahmed T, Tahir M, Low MX, Ren Y, Tawfik SA, Mayes ELH, Kuriakose S, Nawaz S, Spencer MJS, Chen H, Bhaskaran M, Sriram S, Walia S. Fully Light-Controlled Memory and Neuromorphic Computation in Layered Black Phosphorus. Advanced Materials (Deerfield Beach, Fla.). e2004207. PMID 33205523 DOI: 10.1002/adma.202004207 |
0.355 |
|
| 2020 |
Rahman MA, Tawfik SA, Ahmed T, Spencer MJS, Walia S, Sriram S, Bhaskaran M. Differential work-function enabled bifunctional switching in strontium titanate flexible resistive memories. Acs Applied Materials & Interfaces. PMID 31976656 DOI: 10.1021/acsami.9b20585 |
0.427 |
|
| 2019 |
Ahmed T, Walia S, Mayes ELH, Ramanathan R, Bansal V, Bhaskaran M, Sriram S, Kavehei O. Time and rate dependent synaptic learning in neuro-mimicking resistive memories. Scientific Reports. 9: 15404. PMID 31659247 DOI: 10.1038/S41598-019-51700-0 |
0.665 |
|
| 2019 |
Ahmed T, Kuriakose S, Mayes ELH, Ramanathan R, Bansal V, Bhaskaran M, Sriram S, Walia S. Optically Stimulated Artificial Synapse Based on Layered Black Phosphorus. Small (Weinheim An Der Bergstrasse, Germany). e1900966. PMID 31018039 DOI: 10.1002/smll.201900966 |
0.343 |
|
| 2019 |
Kim J, Nili H, Truong ND, Ahmed T, Yang J, Jeong DS, Sriram S, Ranasinghe DC, Ippolito S, Chun H, Kavehei O. Nano-Intrinsic True Random Number Generation: A Device to Data Study Ieee Transactions On Circuits and Systems I: Regular Papers. 66: 2615-2626. DOI: 10.1109/Tcsi.2019.2895045 |
0.668 |
|
| 2019 |
Nirantar S, Ahmed T, Bhaskaran M, Han J, Walia S, Sriram S. Electron Emission Devices for Energy‐Efficient Systems Advanced Intelligent Systems. 1: 1900039. DOI: 10.1002/aisy.201900039 |
0.318 |
|
| 2019 |
Nirantar S, Mayes E, Rahman MA, Ahmed T, Taha M, Bhaskaran M, Walia S, Sriram S. In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased
a
‐VO
x
Asymmetric Crossbars Advanced Electronic Materials. 5: 1900605. DOI: 10.1002/aelm.201900605 |
0.31 |
|
| 2018 |
Nirantar S, Ahmed T, Ren G, Gutruf P, Xu C, Bhaskaran M, Walia S, Sriram S. Metal-Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics. Nano Letters. PMID 30441900 DOI: 10.1021/acs.nanolett.8b02849 |
0.386 |
|
| 2018 |
Ahmed T, Walia S, Mayes ELH, Ramanathan R, Guagliardo P, Bansal V, Bhaskaran M, Yang JJ, Sriram S. Data related to the nanoscale structural and compositional evolution in resistance change memories. Data in Brief. 21: 18-24. PMID 30310835 DOI: 10.1016/j.dib.2018.09.087 |
0.454 |
|
| 2018 |
Rahman F, Ahmed T, Walia S, Mayes E, Sriram S, Bhaskaran M, Balendhran S. Reversible resistive switching behaviour in CVD grown, large area MoO. Nanoscale. PMID 30141809 DOI: 10.1039/c8nr04407d |
0.475 |
|
| 2018 |
Messalea KA, Carey BJ, Jannat A, Syed N, Mohiuddin M, Zhang BY, Zavabeti A, Ahmed T, Mahmood N, Della Gaspera E, Khoshmanesh K, Kalantar-Zadeh K, Daeneke T. BiO monolayers from elemental liquid bismuth. Nanoscale. PMID 30090912 DOI: 10.1039/c8nr03788d |
0.312 |
|
| 2018 |
Kim J, Ahmed T, Nili H, Yang J, Jeong DS, Beckett P, Sriram S, Ranasinghe DC, Kavehei O. A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory Ieee Transactions On Information Forensics and Security. 13: 437-448. DOI: 10.1109/Tifs.2017.2756562 |
0.739 |
|
| 2018 |
Rahman MA, Ahmed T, Walia S, Sriram S, Bhaskaran M. Oxygen-deficient strontium titanate based stretchable resistive memories Applied Materials Today. 13: 126-134. DOI: 10.1016/J.APMT.2018.08.011 |
0.339 |
|
| 2017 |
Taha M, Walia S, Ahmed T, Headland D, Withayachumnankul W, Sriram S, Bhaskaran M. Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices. Scientific Reports. 7: 17899. PMID 29263388 DOI: 10.1038/s41598-017-17937-3 |
0.376 |
|
| 2017 |
Daeneke T, Atkin P, Orrell-Trigg R, Zavabeti A, Ahmed T, Walia S, Liu M, Tachibana Y, Javaid M, Greentree AD, Russo SP, Kaner RB, Kalantar-Zadeh K. Wafer-Scale Synthesis of Semiconducting SnO Monolayers from Interfacial Oxide Layers of Metallic Liquid Tin. Acs Nano. PMID 29045121 DOI: 10.1021/Acsnano.7B04856 |
0.314 |
|
| 2017 |
Ahmed T, Walia S, Kim J, Nili H, Ramanathan R, Mayes ELH, Lau DWM, Kavehei O, Bansal V, Bhaskaran M, Sriram S. Transparent amorphous strontium titanate resistive memories with transient photo-response. Nanoscale. PMID 28944813 DOI: 10.1039/C7Nr04372D |
0.624 |
|
| 2017 |
Walia S, Balendhran S, Ahmed T, Singh M, El-Badawi C, Brennan MD, Weerathunge P, Karim MN, Rahman F, Rassell A, Duckworth J, Ramanathan R, Collis GE, Lobo CJ, Toth M, et al. Ambient Protection of Few-Layer Black Phosphorus via Sequestration of Reactive Oxygen Species. Advanced Materials (Deerfield Beach, Fla.). PMID 28497880 DOI: 10.1002/Adma.201700152 |
0.327 |
|
| 2016 |
Nili H, Ahmed T, Walia S, Ramanathan R, Kandjani AE, Rubanov S, Kim J, Kavehei O, Bansal V, Bhaskaran M, Sriram S. Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO3-x memristors. Nanotechnology. 27: 505210. PMID 27861164 DOI: 10.1088/0957-4484/27/50/505210 |
0.619 |
|
| 2015 |
Nili H, Walia S, Kandjani AE, Ramanathan R, Gutruf P, Ahmed T, Balendhran S, Bansal V, Strukov DB, Kavehei O, Bhaskaran M, Sriram S. Donor-induced performance tuning of amorphous SrTiO3 memristive nanodevices: Multistate resistive switching and mechanical tunability Advanced Functional Materials. 25: 3172-3182. DOI: 10.1002/Adfm.201501019 |
0.755 |
|
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