☰

Qingjiang Li - Publications

Affiliations: 
2010-2014 Imperial College, London, London, England, United Kingdom 
Tree Info Similar researchers PubMed Report error

11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Zhang S, Xu H, Li Z, Liu S, Song B, Li Q. A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect. Frontiers in Neuroscience. 15: 635264. PMID 33633539 DOI: 10.3389/fnins.2021.635264  0.347
2019 Sun Y, Wang C, Xu H, Song B, Li N, Li Q, Liu S. Transition from rectification to resistive-switching in Ti/MgF2/Pt memory Aip Advances. 9: 105117. DOI: 10.1063/1.5125153  0.395
2019 Liu S, Sun Y, Song B, Li Z, Liu H, Li Q. Understanding the conduction and switching mechanism of Ti/AlOx/TaOx/Pt analog memristor Physics Letters A. 383: 125877. DOI: 10.1016/J.PHYSLETA.2019.125877  0.308
2019 Wang W, Wu Z, Shi T, Wang Y, Liu S, Cao R, Xu H, Liu Q, Li Q. Voltage-control oscillator based on Pt/C/NbOx/TiN device with highly improved threshold switching performances Science China Physics, Mechanics & Astronomy. 62. DOI: 10.1007/s11433-019-1463-y  0.364
2017 Li Q, Salaoru I, Khiat A, Xu H, Prodromakis T. Correlated resistive/capacitive state variability in solid TiO2 based memory devices Applied Physics A. 123. DOI: 10.1007/S00339-017-0991-5  0.691
2016 Liu S, Wang W, Li Q, Zhao X, Li N, Xu H, Liu Q, Liu M. Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition Science China Physics, Mechanics & Astronomy. 59. DOI: 10.1007/S11433-016-0389-9  0.354
2015 Li Q, Serb A, Prodromakis T, Xu H. A memristor SPICE model accounting for synaptic activity dependence. Plos One. 10: e0120506. PMID 25785597 DOI: 10.1371/journal.pone.0120506  0.534
2014 Salaoru I, Li Q, Khiat A, Prodromakis T. Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices. Nanoscale Research Letters. 9: 552. PMID 25298759 DOI: 10.1186/1556-276X-9-552  0.717
2014 Li Q, Khiat A, Salaoru I, Xu H, Prodromakis T. Stochastic switching of TiO2-based memristive devices with identical initial memory states. Nanoscale Research Letters. 9: 293. PMID 24994953 DOI: 10.1186/1556-276X-9-293  0.719
2014 Salaoru I, Khiat A, Li Q, Berdan R, Papavassiliou C, Prodromakis T. Origin of the OFF state variability in ReRAM cells Journal of Physics D. 47: 145102. DOI: 10.1088/0022-3727/47/14/145102  0.534
2013 Salaoru I, Khiat A, Li Q, Berdan R, Prodromakis T. Pulse-induced resistive and capacitive switching in TiO2 thin film devices Applied Physics Letters. 103: 233513. DOI: 10.1063/1.4840316  0.645
Show low-probability matches.