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Venkatesh Narayanamurti, Ph.D - Publications

Affiliations: 
1960-1965 Physics Cornell University, Ithaca, NY, United States 
 1992-1998 Physics University of California, Santa Barbara, Santa Barbara, CA, United States 
 1998-2008 Applied Physics Harvard University, Cambridge, MA, United States 
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Year Citation  Score
2013 Altfeder I, Yi W, Narayanamurti V. Spin-polarized scanning tunneling microscopy of the room-temperature antiferromagnet c-FeSi Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.020403  0.449
2013 Dao TD, Dang CTT, Han G, Hoang CV, Yi W, Narayanamurti V, Nagao T. Chemically synthesized nanowire TiO2/ZnO core-shell p-n junction array for high sensitivity ultraviolet photodetector Applied Physics Letters. 103. DOI: 10.1063/1.4826921  0.332
2012 Gurwitz R, Tavor A, Karpeles L, Shalish I, Yi W, Seryogin G, Narayanamurti V. Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure Applied Physics Letters. 100. DOI: 10.1063/1.4712562  0.5
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. High-current-density monolayer CdSe/ZnS quantum dot light-emitting devices with oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 23: 4521-5. PMID 21901762 DOI: 10.1002/Adma.201101782  0.773
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. Scanning tunneling microscope investigation of local density of states in Al-doped ZnO thin films Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.075430  0.769
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence Applied Physics Letters. 99. DOI: 10.1063/1.3647622  0.765
2010 Dickey MD, Russell KJ, Lipomi DJ, Narayanamurti V, Whitesides GM. Transistors formed from a single lithography step using information encoded in topography. Small (Weinheim An Der Bergstrasse, Germany). 6: 2050-7. PMID 20715073 DOI: 10.1002/Smll.201000554  0.586
2010 Russell KJ, Capasso F, Narayanamurti V, Lu H, Zide JMO, Gossard AC. Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.115322  0.629
2010 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/ Alx Ga 1-x As as a model system Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235325  0.484
2010 Hummon MR, Stollenwerk AJ, Narayanamurti V, Anikeeva PO, Panzer MJ, Wood V, Bulovi? V. Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115439  0.768
2010 Yi W, Kim T, Shalish I, Loncar M, Aziz MJ, Narayanamurti V. Room-temperature photoresponse of Schottky photodiodes based on GaN xAs1-x synthesized by ion implantation and pulsed-laser melting Applied Physics Letters. 97. DOI: 10.1063/1.3500981  0.671
2010 Ruzmetov D, Gopalakrishnan G, Ko C, Narayanamurti V, Ramanathan S. Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer Journal of Applied Physics. 107. DOI: 10.1063/1.3408899  0.329
2009 Shalish I, Seryogin G, Yi W, Bao JM, Zimmler MA, Likovich E, Bell DC, Capasso F, Narayanamurti V. Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire. Nanoscale Research Letters. 4: 532-537. PMID 20596436 DOI: 10.1007/S11671-009-9276-Z  0.763
2009 Petersen EW, Likovich EM, Russell KJ, Narayanamurti V. Growth of ZnO nanowires catalyzed by size-dependent melting of Au nanoparticles. Nanotechnology. 20: 405603. PMID 19738315 DOI: 10.1088/0957-4484/20/40/405603  0.761
2009 Likovich EM, Russell KJ, Petersen EW, Narayanamurti V. Weak localization and mobility in ZnO nanostructures Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.245318  0.783
2009 Likovich E, Russell K, Yi W, Narayanamurti V, Ku KC, Zhu M, Samarth N. Magnetoresistance in an asymmetric Ga1-xMnxAs resonant tunneling diode Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.201307  0.747
2009 Mani RG, Johnson WB, Umansky V, Narayanamurti V, Ploog K. Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.205320  0.562
2009 Ruzmetov D, Heiman D, Claflin BB, Narayanamurti V, Ramanathan S. Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.153107  0.35
2009 Ruzmetov D, Gopalakrishnan G, Deng J, Narayanamurti V, Ramanathan S. Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions Journal of Applied Physics. 106. DOI: 10.1063/1.3245338  0.361
2009 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914  0.51
2009 Likovich EM, Russell KJ, Narayanamurti V, Lu H, Gossard AC. Direct injection tunnel spectroscopy of a p-n junction Applied Physics Letters. 95. DOI: 10.1063/1.3177191  0.795
2009 Yoon J, Girgis AM, Shalish I, Ram-Mohan LR, Narayanamurti V. Size-dependent impurity activation energy in GaN nanowires Applied Physics Letters. 94. DOI: 10.1063/1.3115769  0.31
2009 Yi W, Stollenwerk AJ, Narayanamurti V. Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures Surface Science Reports. 64: 169-190. DOI: 10.1016/J.Surfrep.2009.01.001  0.762
2008 Ruzmetov D, Zawilski KT, Senanayake SD, Narayanamurti V, Ramanathan S. Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 465204. PMID 21693844 DOI: 10.1088/0953-8984/20/46/465204  0.349
2008 Zimmler MA, Stichtenoth D, Ronning C, Yi W, Narayanamurti V, Voss T, Capasso F. Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass. Nano Letters. 8: 1695-9. PMID 18462004 DOI: 10.1021/Nl080627W  0.5
2008 Likovich E, Russell K, Yi W, Narayanamurti V, Ku KC, Zhu M, Samarth N. Observation of magnetoresistance polarity reversal in 3D to 2D tunneling in an asymmetric GaMnAs resonant tunneling diode Device Research Conference - Conference Digest, Drc. 167-168. DOI: 10.1109/DRC.2008.4800787  0.747
2008 Ruzmetov D, Senanayake SD, Narayanamurti V, Ramanathan S. Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.195442  0.331
2008 Kim T, Alberi K, Dubon OD, Aziz MJ, Narayanamurti V. Composition dependence of Schottky barrier heights and bandgap energies of GaNx As1-x synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 104. DOI: 10.1063/1.3041154  0.636
2008 Kim T, Aziz MJ, Narayanamurti V. Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting Applied Physics Letters. 93. DOI: 10.1063/1.2982424  0.647
2007 Zimmler MA, Bao J, Shalish I, Yi W, Narayanamurti V, Capasso F. A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection. Nanotechnology. 18: 395201. PMID 21730412 DOI: 10.1088/0957-4484/18/39/395201  0.519
2007 Yi W, Narayanamurti V, Zide JMO, Bank SR, Gossard AC. Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.115333  0.54
2007 Zimmler MA, Bao J, Shalish I, Yi W, Yoon J, Narayanamurti V, Capasso F. Electroluminescence from single nanowires by tunnel injection: An experimental study Nanotechnology. 18. DOI: 10.1088/0957-4484/18/23/235205  0.491
2007 Ruzmetov D, Zawilski KT, Narayanamurti V, Ramanathan S. Structure-functional property relationships in rf-sputtered vanadium dioxide thin films Journal of Applied Physics. 102. DOI: 10.1063/1.2817818  0.313
2007 MoberlyChan W, Tringe J, Shalish I, Narayanamurti V. Role of Planar Defects in Compound Semiconductor Crystals: From Growth of Nanomasts & Nanosails to Processing Light Emission in DualBeam FIB/SEM Microscopy and Microanalysis. 13: 722-723. DOI: 10.1017/S1431927607073564  0.317
2006 Mani RG, Ramanathan S, Narayanamurti V. Electrical study of device arrays on thin film vanadium dioxide Materials Research Society Symposium Proceedings. 966: 192-197. DOI: 10.1557/Proc-0966-T10-18  0.536
2006 Shakouri A, Bian Z, Singh R, Zhang Y, Vashaee D, Humphrey TE, Schmidt H, Zide JM, Zeng G, Bahk JH, Gossard AC, Bowers JE, Rawat V, Sands TD, Kim W, ... ... Narayanamurti V, et al. Solid-state and vacuum thermionic energy conversion Materials Research Society Symposium Proceedings. 886: 245-260. DOI: 10.1557/Proc-0886-F07-01  0.399
2006 Russell KJ, Narayanamurti V, Appelbaum I, Hanson MP, Gossard AC. Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.205330  0.641
2006 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Schalek R, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations Journal of Applied Physics. 100. DOI: 10.1063/1.2208738  0.694
2006 Olson MR, Russell KJ, Narayanamurti V, Olson JM, Appelbaum I. Linear photon upconversion of 400 meV in an AlGaInPGaInP quantum well heterostructure to visible light at room temperature Applied Physics Letters. 88. DOI: 10.1063/1.2195094  0.664
2005 Seryogin G, Shalish I, Moberlychan W, Narayanamurti V. Catalytic hydride vapour phase epitaxy growth of GaN nanowires. Nanotechnology. 16: 2342-5. PMID 20818016 DOI: 10.1088/0957-4484/16/10/058  0.34
2005 Valenzuela SO, Monsma DJ, Marcus CM, Narayanamurti V, Tinkham M. Spin polarized tunneling at finite bias. Physical Review Letters. 94: 196601. PMID 16090193 DOI: 10.1103/Physrevlett.94.196601  0.362
2005 Russell KJ, Appelbaum I, Narayanamurti V, Hanson MP, Gossard AC. Transverse momentum nonconservation at the ErAs/GaAs interface Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.121311  0.612
2005 Appelbaum I, Narayanamurti V. Monte Carlo calculations for metal-semiconductor hot-electron injection via tunnel-junction emission Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.045320  0.364
2005 Yi W, Kaya II, Altfeder IB, Appelbaum I, Chen DM, Narayanamurti V. Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces Review of Scientific Instruments. 76. DOI: 10.1063/1.1938969  0.5
2005 Appelbaum I, Yi W, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence microscopy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1861961  0.683
2004 Altfeder IB, Liang X, Yamada T, Chen DM, Narayanamurti V. Anisotropic metal-insulator transition in epitaxial thin films. Physical Review Letters. 92: 226404. PMID 15245244 DOI: 10.1103/Physrevlett.92.226404  0.354
2004 Mani RG, Smet JH, von Klitzing K, Narayanamurti V, Johnson WB, Umansky V. Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices. Physical Review Letters. 92: 146801. PMID 15089564 DOI: 10.1103/Physrevlett.92.146801  0.305
2004 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic Electron Emission Luminescence of InAs Quantum Dots Embedded in a GaAs/Al x Ga 1− x As Heterostructure Mrs Proceedings. 838. DOI: 10.1557/Proc-838-O11.2  0.682
2004 Mani RG, Narayanamurti V, Von Klitzing K, Smet JH, Johnson WB, Umansky V. Radiation-induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima Physical Review B - Condensed Matter and Materials Physics. 70: 155310-1-155310-5. DOI: 10.1103/Physrevb.70.155310  0.534
2004 Shalish I, Temkin H, Narayanamurti V. Size-dependent surface luminescence in ZnO nanowires Physical Review B - Condensed Matter and Materials Physics. 69: 245401-1-245401-4. DOI: 10.1103/Physrevb.69.245401  0.334
2004 Mani RG, Smet JH, Von Klitzing K, Narayanamurti V, Johnson WB, Umansky V. Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa 1-xAs devices Physical Review B - Condensed Matter and Materials Physics. 69: 193304-1-193304-4. DOI: 10.1103/Physrevb.69.193304  0.557
2004 Appelbaum I, Wang T, Joannopoulos JD, Narayanamurti V. Ballistic hot-electron transport in nanoscale semiconductor heterostructures: Exact self-energy of a three-dimensional periodic tight-binding Hamiltonian Physical Review B - Condensed Matter and Materials Physics. 69: 165301-1-165301-6. DOI: 10.1103/Physrevb.69.165301  0.324
2004 Mani RG, Narayanamurti V, Von Klitzing K, Smet JH, Johnson WB, Umansky V. Radiation-induced oscillatory Hall effect in high-mobility GaAs/Al xGa1-xAs devices Physical Review B - Condensed Matter and Materials Physics. 69: 161306-1-161306-4. DOI: 10.1103/Physrevb.69.161306  0.532
2004 Russell KJ, Appelbaum I, Yi W, Monsma DJ, Capasso F, Marcus CM, Narayanamurti V, Hanson MP, Gossard AC. Avalanche spin-valve transistor Applied Physics Letters. 85: 4502-4504. DOI: 10.1063/1.1818339  0.618
2004 Appelbaum I, Russell KJ, Shalish I, Narayanamurti V, Hanson MP, Gossard AC. Ballistic hole emission luminescence Applied Physics Letters. 85: 2265-2267. DOI: 10.1063/1.1793347  0.638
2004 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure Applied Physics Letters. 85: 1990-1992. DOI: 10.1063/1.1790595  0.712
2004 Yi W, MoberlyChan W, Narayanamurti V, Hu YF, Li Q, Kaya I, Burns M, Chen DM. Characterization of spinel iron-oxide nanocrystals grown on Fe whiskers Journal of Applied Physics. 95: 7136-7138. DOI: 10.1063/1.1676031  0.411
2004 Appelbaum I, Russell KJ, Kozhevnikov M, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope Applied Physics Letters. 84: 547-549. DOI: 10.1063/1.1644329  0.657
2004 Wei Y, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence of InAs quantum dots embedded in a GaAs/AlxGa1-xAs heterostructure Materials Research Society Symposium Proceedings. 838: 170-175. DOI: 10.1063/1.1584524  0.668
2003 Appelbaum I, Sheth R, Shalish I, Russell KJ, Narayanamurti V. Experimental test of the planar tunneling model for ballistic electron emission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 67: 1553071-1553074. DOI: 10.1103/Physrevb.67.155307  0.621
2003 Mani RG, Johnson WB, Narayanamurti V. Nuclear spin based quantum information processing at high magnetic fields Nanotechnology. 14: 515-522. DOI: 10.1088/0957-4484/14/5/307  0.359
2003 Appelbaum I, Russell KJ, Monsma DJ, Narayanamurti V, Marcus CM, Hanson MP, Gossard AC. Luminescent spin-valve transistor Applied Physics Letters. 83: 4571-4573. DOI: 10.1063/1.1630838  0.58
2003 Appelbaum I, Monsma DJ, Russell KJ, Narayanamurti V, Marcus CM. Spin-valve photodiode Applied Physics Letters. 83: 3737-3739. DOI: 10.1063/1.1623315  0.607
2003 Russella KJ, Appelbaum I, Temkin H, Perry CH, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature electro-optic up-conversion via internal photoemission Applied Physics Letters. 82: 2960-2962. DOI: 10.1063/1.1571981  0.32
2002 Mani RG, Smet JH, von Klitzing K, Narayanamurti V, Johnson WB, Umansky V. Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures. Nature. 420: 646-50. PMID 12478287 DOI: 10.1038/Nature01277  0.575
2002 Altfeder IB, Narayanamurti V, Chen DM. Imaging subsurface reflection phase with quantized electrons. Physical Review Letters. 88: 206801. PMID 12005588 DOI: 10.1103/Physrevlett.88.206801  0.385
2002 Dupuis RD, Ryou JH, Heller RD, Walter G, Kellogg DA, Holonyak N, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 707: 149-154. DOI: 10.1557/Proc-707-H11.6.1  0.372
2002 Reddy CV, Martinez RE, Narayanamurti V, Xin HP, Tu CW. Evolution of the GaN x P 1 − x alloy band structure: A ballistic electron emission spectroscopic investigation Physical Review B. 66: 235313. DOI: 10.1103/Physrevb.66.235313  0.334
2002 Shalish I, Altfeder IB, Narayanamurti V. Observations of conduction-band structure of 4H- and 6H-SiC Physical Review B - Condensed Matter and Materials Physics. 65: 0731041-0731044. DOI: 10.1103/Physrevb.65.073104  0.301
2002 Martínez RE, Appelbaum I, Reddy CV, Sheth R, Russell KJ, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Electron transport through strongly coupled AlInP/GaInP superlattices Applied Physics Letters. 81: 3576-3578. DOI: 10.1063/1.1519350  0.618
2002 Reddy CV, Narayanamurti V, Ryou JH, Dupuis RD. Current transport in InP/In0.5(Al0.6Ga 0.4)0.5P self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy Applied Physics Letters. 80: 1770-1772. DOI: 10.1063/1.1458689  0.399
2002 Ryou JH, Dupuis RD, Walter G, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Properties of InP self-assembled quantum dots embedded in In 0.49(Al xGa 1-x) 0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition Journal of Applied Physics. 91: 5313-5320. DOI: 10.1063/1.1454205  0.373
2002 Mani RG, Johnson WB, Narayanamurti V, Privman V, Zhang YH. Nuclear spin based memory and logic in quantum Hall semiconductor nanostructures for quantum computing applications Physica E: Low-Dimensional Systems and Nanostructures. 12: 152-156. DOI: 10.1016/S1386-9477(01)00290-9  0.565
2002 Mani RG, Johnson WB, Narayanamurti V. Manipulation and measurement of nuclear spin over the quantum Hall regime for quantum information processing Superlattices and Microstructures. 32: 261-273. DOI: 10.1016/S0749-6036(03)00027-2  0.328
2001 Altfeder IB, Golovchenko JA, Narayanamurti V. Confinement-enhanced electron transport across a metal-semiconductor interface. Physical Review Letters. 87: 056801. PMID 11497796 DOI: 10.1103/Physrevlett.87.056801  0.395
2001 Ryou JH, Dupuis RD, Walter G, Kellogg DA, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 4091-4093. DOI: 10.1063/1.1382622  0.376
2001 Ryou JH, Dupuis RD, Mathes DT, Hull R, Reddy CV, Narayanamurti V. High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 3526-3528. DOI: 10.1063/1.1376665  0.38
2001 Reddy CV, Narayanamurti V. Characterization of nanopipes/dislocations in silicon carbide using ballistic electron emission microscopy Journal of Applied Physics. 89: 5797-5799. DOI: 10.1063/1.1365938  0.356
2001 Narayanamurti V, Kozhevnikov M. BEEM imaging and spectroscopy of buried structures in semiconductors Physics Report. 349: 447-514. DOI: 10.1016/S0370-1573(00)00119-8  0.396
2001 Ryou JH, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R, Mintairov A, Merz JL. Growth and characterizations of InP self-assembled quantum dots embedded in InAlP grown on GaAs substrates Journal of Electronic Materials. 30: 471-476. DOI: 10.1007/S11664-001-0085-0  0.35
2000 Kozhevnikov M, Narayanamurti V, Smith DL, Chiu YJ. Second derivative ballistic electron emission spectroscopy in Au/(AlGa)As Materials Research Society Symposium - Proceedings. 584: 207-212. DOI: 10.1557/Proc-584-207  0.38
2000 Ryou JH, Chowdhuiy U, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R. Self-assembled iii-phospide quantum dots grown by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 583: 39-44. DOI: 10.1557/Proc-583-39  0.346
2000 Kozhevnikov M, Narayanamurti V, Reddy CV, Xin HP, Tu CW, Mascarenhas A, Zhang Y. Evolution ofGaAs1−xNxconduction states and giantAu/GaAs1−xNxSchottky barrier reduction studied by ballistic electron emission spectroscopy Physical Review B. 61: R7861-R7864. DOI: 10.1103/Physrevb.61.R7861  0.303
2000 Smith DL, Kozhevnikov M, Lee EY, Narayanamurti V. Scattering theory of ballistic-electron-emission microscopy at nonepitaxial interfaces Physical Review B - Condensed Matter and Materials Physics. 61: 13914-13922. DOI: 10.1103/Physrevb.61.13914  0.322
2000 Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure Applied Physics Letters. 77: 1167-1169. DOI: 10.1063/1.1289264  0.4
2000 Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Imaging and local current transport measurements of AlInP quantum dots grown on GaP Applied Physics Letters. 76: 1437-1439. DOI: 10.1063/1.126056  0.406
2000 Narayanamurti V, Kozhevnikov M. The Role Of Ballistic Electron Emission Microscopy For Characterization Of Physical Phenomena In Semiconductor Alloys And Quantum Structures International Journal of High Speed Electronics and Systems. 10: 55-74. DOI: 10.1016/S0129-1564(00)00009-X  0.41
1999 Kozhevnikov M, Narayanamurti V, Zheng C, Chiu YJ, Smith DL. Effect of electron scattering on second derivative ballistic electron emission spectroscopy in Au/GaAs/AlGaAs heterostructures Physical Review Letters. 82: 3677-3680. DOI: 10.1103/Physrevlett.82.3677  0.391
1999 Kozhevnikov M, Narayanamurti V, Mascarenhas A, Zhang Y, Olson JM, Smith DL. Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy Applied Physics Letters. 75: 1128-1130. DOI: 10.1063/1.124618  0.347
1999 Braze EG, Chin MA, Narayanamurti V. Direct observation of localized high current densities in GaN films Applied Physics Letters. 74: 2367-2369. DOI: 10.1063/1.123853  0.375
1999 Bhargava S, Blank HR, Hall E, Chin MA, Kroemer H, Narayanamurti V. Staggered to straddling band lineups in InAs/Al(As, Sb) Applied Physics Letters. 74: 1135-1137. DOI: 10.1063/1.123466  0.313
1998 Narayanamurti V. Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots Proceedings of Spie - the International Society For Optical Engineering. 3287: 152-166. DOI: 10.1117/12.304476  0.434
1998 Bhargava S, Zheng C, Ko J, Chin MA, Coldren LA, Narayanamurti V. Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy Applied Physics Letters. 73: 3271-3272. DOI: 10.1063/1.122741  0.315
1998 Hansen PJ, Strausser YE, Erickson AN, Tarsa EJ, Kozodoy P, Brazel EG, Ibbetson JP, Mishra U, Narayanamurti V, DenBaars SP, Speck JS. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 72: 2247-2249. DOI: 10.1063/1.121268  0.329
1998 Rubin ME, Blank HR, Chin MA, Kroemer H, Narayanamurti V. Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs Physica E: Low-Dimensional Systems and Nanostructures. 2: 682-684. DOI: 10.1016/S1386-9477(98)00139-8  0.383
1998 Bell LD, Narayanamurti V. Ballistic-electron-emission microscopy of semiconductor heterostructures Current Opinion in Solid State and Materials Science. 3: 38-44. DOI: 10.1016/S1359-0286(98)80063-6  0.398
1998 Narayanamurti V, Rao C. Electronic materials frontiers in electronic materials : Editorial overview Current Opinion in Solid State & Materials Science. 3: 3-4. DOI: 10.1016/S1359-0286(98)80058-2  0.345
1998 Blank HR, Mathis S, Hall E, Bhargava S, Behres A, Heuken M, Kroemer H, Narayanamurti V. Al(As,Sb) heterobarriers on InAs: Growth, structural properties and electrical transport Journal of Crystal Growth. 187: 18-28. DOI: 10.1016/S0022-0248(97)00851-8  0.342
1997 Lee EY, Bhargava S, Chin MA, Narayanamurti V. Atomic and mesoscopic scale characterization of semiconductor interfaces by ballistic electron emission microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 1351-1357. DOI: 10.1116/1.580588  0.374
1997 O'shea JJ, Brazel EG, Rubin ME, Bhargava S, Chin MA, Narayanamurti V. Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects Physical Review B. 56: 2026-2035. DOI: 10.1103/Physrevb.56.2026  0.33
1997 Lee EY, Narayanamurti V, Smith DL. Monte Carlo simulations of ballistic-electron-emission-microscopy imaging and spectroscopy of buried mesoscopic structures Physical Review B - Condensed Matter and Materials Physics. 55: R16033-R16036. DOI: 10.1103/Physrevb.55.R16033  0.394
1997 Rubin ME, Blank HR, Chin MA, Kroemer H, Narayanamurti V. Local conduction band offset of GaSb self-assembled quantum dots on GaAs Applied Physics Letters. 70: 1590-1592. DOI: 10.1063/1.118624  0.38
1997 Brazel EG, Chin MA, Narayanamurti V, Kapolnek D, Tarsa EJ, DenBaars SP. Ballistic electron emission microscopy study of transport in GaN thin films Applied Physics Letters. 70: 330-332. DOI: 10.1063/1.118406  0.405
1997 Bhargava S, Blank HR, Narayanamurti V, Kroemer H. Fermi-level pinning position at the Au-InAs interface determined using ballistic electron emission microscopy Applied Physics Letters. 70: 759-761. DOI: 10.1063/1.118271  0.363
1996 Rubin ME, Medeiros-Ribeiro G, O'Shea JJ, Chin MA, Lee EY, Petroff PM, Narayanamurti V. Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy. Physical Review Letters. 77: 5268-5271. PMID 10062758 DOI: 10.1103/Physrevlett.77.5268  0.403
1996 Lee EY, Bhargava S, Chin MA, Narayanamurti V, Pond KJ, Luo K. Observation of misfit dislocations at the InxGa1-xAs/GaAs interface by ballistic-electron-emission microscopy Applied Physics Letters. 69: 940-942. DOI: 10.1063/1.116950  0.359
1996 O’Shea JJ, Reaves CM, DenBaars SP, Chin MA, Narayanamurti V. Conduction band offsets in ordered‐GaInP/GaAs heterostructures studied by ballistic‐electron‐emission microscopy Applied Physics Letters. 69: 3022-3024. DOI: 10.1063/1.116826  0.357
1995 Sajoto T, O'Shea JJ, Bhargava S, Leonard D, Chin MA, Narayanamurti V. Direct Observation of Quasi-Bound States and Band-Structure Effects in a Double Barrier Resonant Tunneling Structure Using Ballistic Electron Emission Microscopy. Physical Review Letters. 74: 3427-3430. PMID 10058198 DOI: 10.1103/Physrevlett.74.3427  0.401
1995 O'Shea JJ, Reaves CM, Chin MA, Denbaars SP, Gossard AC, Narayanamurti V, Jones ED. Ballistic-Electron-Emission Microscopy (BEEM) Studies of Gainp/GaAs Heterostructures Mrs Proceedings. 417. DOI: 10.1557/Proc-417-79  0.383
1994 O’Shea JJ, Sajoto T, Bhargava S, Leonard D, Chin MA, Narayanamurti V. Measurement of heterojunction band offsets using ballistic electron emission microscopy Journal of Vacuum Science & Technology B. 12: 2625-2628. DOI: 10.1116/1.587221  0.391
1988 Eisenstein JP, Gossard AC, Narayanamurti V. Thermal conductance magneto-oscillations and electron-phonon coupling in GaAs/AlGaAs heterostructures Surface Science. 196: 445-450. DOI: 10.1016/0039-6028(88)90724-8  0.377
1987 Narayanamurti V. Artificially structured thin-film materials and interfaces. Science (New York, N.Y.). 235: 1023-8. PMID 17782249 DOI: 10.1126/Science.235.4792.1023  0.357
1986 Eisenstein JP, Störmer HL, Narayanamurti V, Cho AY, Gossard AC. Magnetization and density of states of the 2D electron gas in GaAs/AlGaAs heterostructures Surface Science. 170: 271-276. DOI: 10.1016/0039-6028(86)90974-X  0.332
1985 Eisenstein JP, Stormer HL, Narayanamurti V, Cho AY, Gossard AC, Tu CW. Density of states and de Haas-van Alphen effect in two-dimensional electron systems. Physical Review Letters. 55: 875-878. PMID 10032470 DOI: 10.1103/Physrevlett.55.875  0.366
1985 Eisenstein JP, Stoermer HL, Narayanamurti V, Gossard AC. HIGH PRECISION DE HAAS-VAN ALPHEN MEASUREMENTS ON A TWO-DIMENSIONAL ELECTRON GAS . 309-312. DOI: 10.1016/0749-6036(85)90020-5  0.378
1984 Eisenstein JP, Störmer HL, Narayanamurti V, Gossard AC, Wiegmann W. Effect of inversion symmetry on the band structure of semiconductor heterostructures Physical Review Letters. 53: 2579-2582. DOI: 10.1103/Physrevlett.53.2579  0.356
1984 Narayanamurti V. Crystalline semiconductor heterostructures Physics Today. 37: 24-32. DOI: 10.1063/1.2915912  0.33
1984 Narayanamurti V. ACOUSTIC PROPERTIES OF SEMICONDUCTOR SUPERLATTICES AND INTERFACES Journal De Physique (Paris), Colloque. 45: 157. DOI: 10.1051/Jphyscol:1984523  0.398
1984 Haavasoja T, Störmer HL, Bishop DJ, Narayanamurti V, Gossard AC, Wiegmann W. Magnetization measurements on a two-dimensional electron system Surface Science. 142: 294-297. DOI: 10.1016/0039-6028(84)90325-X  0.327
1984 Rutledge JE, Dynes RC, Narayanamurti V. Superconducting tunneling in a pair-breaking microwave field Journal of Low Temperature Physics. 54: 547-554. DOI: 10.1007/Bf00683618  0.327
1982 Stoermer HL, Haavasoja T, Narayanamurti V, Gossard AC, Wiegmann W. OBSERVATION OF THE DEHAAS-VAN ALPHEN EFFECT IN A TWO-DIMENSIONAL ELECTRON SYSTEM Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 423-426. DOI: 10.1116/1.582618  0.353
1981 Hu P, Narayanamurti V, Chin MA. Observation of velocity bunching of near-zone-edge phonons in semiconductors: An intense, tunable phonon source near 10 A Physical Review Letters. 46: 192-195. DOI: 10.1103/Physrevlett.46.192  0.358
1981 Lax M, Narayanamurti V. Phonon optics in semiconductors: Phonon generation and electron-phonon scattering in n-GaAs epilayers: I. Theory Physical Review B. 24: 4692-4713. DOI: 10.1103/Physrevb.24.4692  0.357
1981 Ulbrich RG, Narayanamurti V, Chin MA. Ballistic Transport And Decay Of Near Zone-Edge Non-Thermal Phonons In Semiconductors Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:1981664  0.313
1980 Ulbrich RG, Narayanamurti V, Chin MA. Propagation of large-wave-vector acoustic phonons in semiconductors Physical Review Letters. 45: 1432-1435. DOI: 10.1103/Physrevlett.45.1432  0.315
1980 Geschwind S, Walsted1 RE, Romestain R, Narayanamurti V, Kummer RB, Feigenblatt R, Devlin G. The study of electron dynamics in w-type cds by spin-flip raman scattering Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 42: 961-977. DOI: 10.1080/01418638008222340  0.304
1979 Narayanamurti V, Störmer HL, Chin MA, Gossard AC, Wiegmann W. Selective transmission of high-frequency phonons by a superlattice: The "dielectric" phonon filter Physical Review Letters. 43: 2012-2016. DOI: 10.1103/Physrevlett.43.2012  0.315
1978 Narayanamurti V, Logan RA, Chin MA. Direct observation of phonons generated during nonradiative capture in GaAs p-n junctions Physical Review Letters. 40: 63-66. DOI: 10.1103/Physrevlett.40.63  0.329
1978 Narayanamurti V, Dynes RC, Hu P, Smith H, Brinkman WF. Quasiparticle and phonon propagation in bulk, superconducting lead Physical Review B. 18: 6041-6052. DOI: 10.1103/Physrevb.18.6041  0.31
1978 Narayanamurti V, Logan RA, Chin MA, Lax M. Anisotropic phonon generation in GaAs epilayers and pn junctions Solid State Electronics. 21: 1295-1298. DOI: 10.1016/0038-1101(78)90196-X  0.34
1977 Dynes RC, Narayanamurti V, Garno JP. Observation of a new superconducting sate at high quasiparticle injection Physical Review Letters. 39: 229-232. DOI: 10.1103/Physrevlett.39.229  0.309
1973 Dynes RC, Narayanamurti V. Quasiparticle relaxation and phonon emission in superconducting tunnel junctions Solid State Communications. 12: 341-344. DOI: 10.1016/0038-1098(73)90769-2  0.318
1971 Narayanamurti V, Dynes RC. Intense tunable phonon fluorescence in superconductors Physical Review Letters. 27: 410-413. DOI: 10.1103/Physrevlett.27.410  0.336
1971 Dynes RC, Narayanamurti V, Chin M. Monochromatic phonon propagation in Ge:Sb using superconducting tunnel junctions Physical Review Letters. 26: 181-184. DOI: 10.1103/Physrevlett.26.181  0.359
1971 Bucher E, Narayanamurti V, Jayaraman A. Magnetism, metal-insulator transition, and optical properties in Sm- and some other divalent rare-earth monochalcogenides Journal of Applied Physics. 42: 1741-1745. DOI: 10.1063/1.1660421  0.334
1970 Narayanamurti V, Pohl RO. Tunneling states of defects in solids Reviews of Modern Physics. 42: 201-236. DOI: 10.1103/Revmodphys.42.201  0.549
1970 Jayaraman A, Narayanamurti V, Bucher E, Maines RG. Pressure-Induced Metal-Semiconductor Transition and 4 f Electron Delocalization in Sm Te Physical Review Letters. 25: 368-370. DOI: 10.1103/Physrevlett.25.368  0.322
1969 Channin DJ, Narayanamurti V, Pohl RO. Generation of Microwave Frequency Phonons in KC1:Li Physical Review Letters. 22: 524-526. DOI: 10.1103/Physrevlett.22.524  0.558
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