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Xiabing Lou

Affiliations: 
Harvard University, Cambridge, MA, United States 
Area:
Chemistry, Material, thin film deposition
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"Xiabing Lou"
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Roy Gerald Gordon grad student 2011-2017 Harvard

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Lou X, Gong X, Kim SB, et al. (2020) Epitaxial growth of MgxCa1−xO on 4H–SiC(0001) and β-Ga2O3 wide band gap semiconductors with atomic layer deposition Journal of Materials Research. 35: 831-839
Lou X, Gong X, Feng J, et al. (2019) Band offset analysis of ALD La2O3 on GaAs (111), (110) and (100) surfaces for epitaxial growth. Acs Applied Materials & Interfaces
Yang C, Zhao X, Kim SB, et al. (2019) Atomic layer deposition of cubic tin–calcium sulfide alloy films Journal of Materials Research. 35: 795-803
Bhuiyan MA, Zhou H, Chang S, et al. (2018) Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Ieee Transactions On Nuclear Science. 65: 46-52
Feng J, Gong X, Lou X, et al. (2017) Direct-liquid-evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation. Acs Applied Materials & Interfaces
Ren S, Bhuiyan MA, Zhang J, et al. (2017) Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics Ieee Transactions On Nuclear Science. 64: 164-169
Zhou H, Lou X, Sutherlin K, et al. (2017) DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric Ieee Electron Device Letters. 38: 1409-1412
Zhou H, Lou X, Kim SB, et al. (2017) Enhancement-Mode AlGaN/GaN Fin-MOSHEMTs on Si Substrate With Atomic Layer Epitaxy MgCaO Ieee Electron Device Letters. 38: 1294-1297
Lou X, Zhou H, Kim SB, et al. (2016) Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition. Nano Letters. 16: 7650-7654
Kim SB, Yang C, Powers T, et al. (2016) Synthesis of Calcium(II) Amidinate Precursors for Atomic Layer Deposition through a Redox Reaction between Calcium and Amidines. Angewandte Chemie (International Ed. in English)
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