David A Ramirez, Ph.D.
|2010-2016||Electrical and Computer Engineering||Rice University, Houston, TX|
|2020-||Computer Science||Reed College, Portland, OR|
David Ramirez studies wireless communication networks by evaluating and promoting the adoption of new communication methods (e.g., wireless full-duplex or use of millimeter-wave frequencies) to deliver new services with greater requirements (e.g., higher reliability, lower delay, or computation-intensive algorithms in computationally limited devices) that will have a positive societal impact. Beyond research, David is actively engaged in efforts to increase the participation and success of underrepresented groups in STEM fields. David earned a bachelor's degree in Engineering Physics from Tec de Monterrey and an M.S. and a Ph.D. in Electrical and Computer Engineering from Rice University. He held postdoctoral positions at New York University and Princeton University before arriving at Reed College in 2020.
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|Ramirez DA, Hayat MM, Huntington AS, et al. (2014) Non-local model for the spatial distribution of impact ionization events in avalanche photodiodes Ieee Photonics Technology Letters. 26: 25-28|
|Ramirez D, Aazhang B. (2013) Optimal routing and power allocation for wireless networks with imperfect full-duplex nodes Ieee Transactions On Wireless Communications. 12: 4692-4704|
|Williams GM, Ramirez DA, Hayat MM, et al. (2013) Instantaneous receiver operating characteristic (ROC) performance of multi-gain-stage APD photoreceivers Ieee Journal of the Electron Devices Society. 1: 145-153|
|Williams GM, Ramirez DA, Hayat M, et al. (2013) Discrimination of photon- and dark-initiated signals in multiple gain stage APD photoreceivers Ieee Journal of the Electron Devices Society. 1: 99-110|
|Williams GM, Compton M, Ramirez DA, et al. (2013) Multi-gain-stage InGaAs avalanche photodiode with enhanced gain and reduced excess noise Ieee Journal of the Electron Devices Society. 1: 54-65|
|Williams GM, Ramirez DA, Hayat MM, et al. (2013) Time resolved gain and excess noise properties of InGaAs/InAlAs avalanche photodiodes with cascaded discrete gain layer multiplication regions Journal of Applied Physics. 113|
|Senanayake P, Hung CH, Farrell A, et al. (2012) Thin 3D multiplication regions in plasmonically enhanced nanopillar avalanche detectors. Nano Letters. 12: 6448-52|
|Hayat MM, Ramirez DA. (2012) Multiplication theory for dynamically biased avalanche photodiodes: new limits for gain bandwidth product. Optics Express. 20: 8024-40|
|Ramirez DA, Hayat MM, Rees GJ, et al. (2012) New perspective on passively quenched single photon avalanche diodes: effect of feedback on impact ionization. Optics Express. 20: 1512-29|
|Ramirez DA, Hayat MM, Huntington AS, et al. (2012) Theory for spatial distribution of impact-ionization events in avalanche photodiodes 2012 Ieee Photonics Conference, Ipc 2012. 100-101|