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Shiying Xiong, Ph.D. - Publications

Affiliations: 
University of California, Berkeley, Berkeley, CA, United States 
Area:
nanoscale science
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Xiong S, King TJ, Bokor J. A comparison study of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain Ieee Transactions On Electron Devices. 52: 1859-1867. DOI: 10.1109/Ted.2005.852893  0.541
2005 Xiong S, Bokor J. Structural optimization of SUTBDG devices for low-power applications Ieee Transactions On Electron Devices. 52: 360-366. DOI: 10.1109/Ted.2005.843869  0.541
2005 Xiong S, King TJ, Bokor J. Study of the extrinsic parasitics in nano-scale transistors Semiconductor Science and Technology. 20: 652-657. DOI: 10.1088/0268-1242/20/6/029  0.511
2004 Xiong S, Bokor J, Xiang Q, Fisher P, Dudley I, Rao P, Wang H, En B. Is gate line edge roughness a first-order issue in affecting the performance of deep sub-micro bulk MOSFET devices? Ieee Transactions On Semiconductor Manufacturing. 17: 357-361. DOI: 10.1109/Tsm.2004.831560  0.552
2004 Xiong S, Bokor J. A simulation study of gate line edge roughness effects on doping profiles of short-channel MOSFET devices Ieee Transactions On Electron Devices. 51: 228-232. DOI: 10.1109/Ted.2003.821563  0.508
2003 Xiong S, Bokor J. Sensitivity of Double-Gate and FinFET Devices to Process Variations Ieee Transactions On Electron Devices. 50: 2255-2261. DOI: 10.1109/Ted.2003.818594  0.518
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