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Gabriel Walter, Ph.D. - Publications

Affiliations: 
University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
GaAsP LEDs
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46 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Saha AK, Sharma P, Sohn HB, Ghosh S, Das RK, Hebard AF, Zeng H, Baligand C, Walter GA, Moudgil BM. Fe Doped CdTeS Magnetic Quantum Dots for Bioimaging. Journal of Materials Chemistry. B, Materials For Biology and Medicine. 1: 6312-6320. PMID 24634776 DOI: 10.1039/C3Tb20859A  0.308
2010 Then HW, Wu CH, Feng M, Holonyak N, Walter G. Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser Applied Physics Letters. 96: 263505. DOI: 10.1063/1.3458708  0.488
2009 Feng M, Then HW, Holonyak N, Walter G, James A. Resonance-free frequency response of a semiconductor laser Applied Physics Letters. 95: 33509. DOI: 10.1063/1.3184580  0.363
2009 Wu CH, Walter G, Then HW, Feng M, Holonyak N. Scaling of light emitting transistor for multigigahertz optical bandwidth Applied Physics Letters. 94: 171101. DOI: 10.1063/1.3126642  0.375
2008 Then HW, Walter G, Feng M, Holonyak N. Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal Applied Physics Letters. 93: 163504. DOI: 10.1063/1.3000635  0.462
2007 James A, Holonyak N, Feng M, Walter G. Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser Ieee Photonics Technology Letters. 19: 680-682. DOI: 10.1109/Lpt.2007.895049  0.447
2007 Then HW, Walter G, Feng M, Holonyak N. Collector characteristics and the differential optical gain of a quantum-well transistor laser Applied Physics Letters. 91: 243508. DOI: 10.1063/1.2824817  0.498
2007 Chu-Kung BF, Wu CH, Walter G, Feng M, Holonyak N, Chung T, Ryou JH, Dupuis RD. Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors Applied Physics Letters. 91. DOI: 10.1063/1.2821380  0.524
2007 Feng M, Holonyak N, Then HW, Walter G. Charge control analysis of transistor laser operation Applied Physics Letters. 91: 53501. DOI: 10.1063/1.2767172  0.475
2007 Kim J, Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback Applied Physics Letters. 90. DOI: 10.1063/1.2741118  0.699
2007 James A, Walter G, Feng M, Holonyak N. Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser Applied Physics Letters. 90: 152109. DOI: 10.1063/1.2721364  0.409
2007 Walter G, James A, Holonyak N, Feng M. Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement Applied Physics Letters. 90: 91109. DOI: 10.1063/1.2709964  0.463
2006 Feng M, Holonyak N, Chan R, James A, Walter G. High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser Ieee Photonics Technology Letters. 18: 1240-1242. DOI: 10.1109/Lpt.2006.875333  0.311
2006 Feng M, Holonyak N, James A, Cimino K, Walter G, Chan R. Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser Applied Physics Letters. 89. DOI: 10.1063/1.2346369  0.54
2006 Chu-Kung BF, Feng M, Walter G, Holonyak N, Chung T, Ryou JH, Limb J, Yoo D, Shen SC, Dupuis RD, Keogh D, Asbeck PM. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors Applied Physics Letters. 89. DOI: 10.1063/1.2336619  0.539
2006 Zhang XB, Heller RD, Ryou JH, Dupuis RD, Walter G, Holonyak N. Growth of InP self-assembled quantum dots on strained and strain-relaxed in x(Al 0.6Ga 0.4) 1-xP matrices by metal-organic chemical vapor deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2244519  0.603
2006 Walter G, James A, Holonyak N, Feng M, Chan R. Collector breakdown in the heterojunction bipolar transistor laser Applied Physics Letters. 88: 232105. DOI: 10.1063/1.2210079  0.484
2006 Chan R, Feng M, Holonyak N, James A, Walter G. Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser Applied Physics Letters. 88: 143508. DOI: 10.1063/1.2191448  0.511
2006 Feng M, Holonyak N, Chan R, James A, Walter G. Signal mixing in a multiple input transistor laser near threshold Applied Physics Letters. 88: 63509. DOI: 10.1063/1.2171834  0.355
2006 Dixon F, Chan R, Walter G, Holonyak N, Feng M, Zhang XB, Ryou JH, Dupuis RD. Visible spectrum light-emitting transistors Applied Physics Letters. 88. DOI: 10.1063/1.2158704  0.545
2006 Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices Journal of Electronic Materials. 35: 705-710. DOI: 10.1007/S11664-006-0125-X  0.538
2006 Zhang XB, Ryou JH, Dupuis RD, He L, Hull R, Walter G, Holonyak N. Effect of thin strain-compensated Al 0.6Ga 0.4P layers on the growth of multiple-stacked InP/In 0.5Al 0.3Ga 0.2P quantum dots Journal of Electronic Materials. 35: 701-704. DOI: 10.1007/S11664-006-0124-Y  0.636
2005 Chuang SL, Kim J, Kondratko PK, Walter G, Holonyak N, Heller RB, Zhang XB, Dupuis RD. Tunneling Injection Quantum-Dot Lasers Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee02-02  0.655
2005 Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang X, Dupuis RD. Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser Ieee Photonics Technology Letters. 17: 938-940. DOI: 10.1109/Lpt.2005.844328  0.689
2005 Kim J, Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing Ieee Journal of Quantum Electronics. 41: 1369-1379. DOI: 10.1109/Jqe.2005.857067  0.645
2005 Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Temperature-dependent luminescence of InP quantum dots coupled with an InGaP quantum well and of InP quantum dots in a quantum well Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2132529  0.662
2005 Feng M, Holonyak N, Walter G, Chan R. Room temperature continuous wave operation of a heterojunction bipolar transistor laser Applied Physics Letters. 87: 131103. DOI: 10.1063/1.2058213  0.472
2005 Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Interface alloy mixing effect in the growth of self-assembled InP quantum dots on InAlGaP matrices by metalorganic chemical-vapor deposition Journal of Applied Physics. 98: 63501. DOI: 10.1063/1.2043234  0.663
2005 Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Tuning the morphology of InP self-assembled quantum structures grown on InAlP surfaces by metalorganic chemical vapor deposition Applied Physics Letters. 86: 233105. DOI: 10.1063/1.1944897  0.576
2005 Chan R, Feng M, Holonyak N, Walter G. Microwave operation and modulation of a transistor laser Applied Physics Letters. 86: 131114. DOI: 10.1063/1.1889243  0.502
2005 Chung T, Walter G, Holonyak N. Growth mechanism of InAs quantum dots on GaAs by metal-organic chemical-vapor deposition Journal of Applied Physics. 97: 53510. DOI: 10.1063/1.1856218  0.647
2004 Walter G, Holonyak N, Feng M, Chan R. Laser operation of a heterojunction bipolar light-emitting transistor Applied Physics Letters. 85: 4768-4770. DOI: 10.1063/1.1818331  0.485
2004 Feng M, Holonyak N, Chu-Kung B, Walter G, Chan R. Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor Applied Physics Letters. 84: 4792-4794. DOI: 10.1063/1.1760595  0.376
2004 Walter G, Elkow J, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In 0.46Ga 0.54P quantum wells Applied Physics Letters. 84: 666-668. DOI: 10.1063/1.1645674  0.638
2003 Kondratko PK, Chuang SL, Walter G, Chung T, Holonyak N. Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser Applied Physics Letters. 83: 4818-4820. DOI: 10.1063/1.1631397  0.733
2003 Noh MS, Dupuis RD, Bour DP, Walter G, Holonyak N. Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition Applied Physics Letters. 83: 2530-2532. DOI: 10.1063/1.1615312  0.557
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Effect of the InAIGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition Applied Physics Letters. 83: 1349-1351. DOI: 10.1063/1.1600825  0.562
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition Applied Physics Letters. 83: 476-478. DOI: 10.1063/1.1595152  0.58
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Effect of Si delta doping on the luminescence properties of InP/InAIP quantum dots Applied Physics Letters. 82: 4343-4345. DOI: 10.1063/1.1582364  0.549
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition Journal of Electronic Materials. 32: 1335-1338. DOI: 10.1007/S11664-003-0032-3  0.656
2002 Dupuis RD, Ryou JH, Heller RD, Walter G, Kellogg DA, Holonyak N, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 707: 149-154. DOI: 10.1557/Proc-707-H11.6.1  0.782
2002 Walter G, Holonyak N, Heller RD, Dupuis RD. Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAIP heterostructure laser Applied Physics Letters. 81: 4604-4606. DOI: 10.1063/1.1526454  0.585
2002 Ryou JH, Dupuis RD, Walter G, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Properties of InP self-assembled quantum dots embedded in In 0.49(Al xGa 1-x) 0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition Journal of Applied Physics. 91: 5313-5320. DOI: 10.1063/1.1454205  0.724
2001 Walter G, Holonyak N, Ryou JH, Dupuis RD. Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation Applied Physics Letters. 79: 3215-3217. DOI: 10.1063/1.1416158  0.733
2001 Walter G, Holonyak N, Ryou JH, Dupuis RD. Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures Applied Physics Letters. 79: 1956-1958. DOI: 10.1063/1.1405153  0.725
2001 Ryou JH, Dupuis RD, Walter G, Kellogg DA, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 4091-4093. DOI: 10.1063/1.1382622  0.782
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