| Year |
Citation |
Score |
| 2022 |
Chang C, Cheng HH, Sevison GA, Hendrickson JR, Li Z, Agha I, Mathews J, Soref RA, Sun G. Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density. Materials (Basel, Switzerland). 15. PMID 35160939 DOI: 10.3390/ma15030989 |
0.611 |
|
| 2020 |
Tran TT, Hudspeth Q, Liu Y, Smillie LA, Wang B, Bruce RA, Mathews J, Warrender JM, Williams JS. Ion beam synthesis and photoluminescence study of supersaturated fully-relaxed Ge-Sn alloys Materials Science and Engineering B-Advanced Functional Solid-State Materials. 262: 114702. DOI: 10.1016/J.Mseb.2020.114702 |
0.329 |
|
| 2019 |
Burrow JA, Yahiaoui R, Sarangan A, Mathews J, Agha I, Searles TA. Eigenmode hybridization enables lattice-induced transparency in symmetric terahertz metasurfaces for slow light applications Optics Letters. 44: 2705. DOI: 10.1364/Ol.44.002705 |
0.721 |
|
| 2019 |
Tran TT, Mathews J, Williams JS. Towards a direct band gap group IV Ge-based material Materials Science in Semiconductor Processing. 92: 39-46. DOI: 10.1016/J.Mssp.2018.05.037 |
0.384 |
|
| 2018 |
Yahiaoui R, Burrow JA, Mekonen SM, Sarangan A, Mathews J, Agha I, Searles TA. Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling Physical Review B. 97. DOI: 10.1103/Physrevb.97.155403 |
0.718 |
|
| 2017 |
Burrow JA, Yahiaoui R, Sarangan A, Agha I, Mathews J, Searles TA. Polarization-dependent electromagnetic responses of ultrathin and highly flexible asymmetric terahertz metasurfaces Optics Express. 25: 32540. DOI: 10.1364/Oe.25.032540 |
0.708 |
|
| 2017 |
Liu Y, Yang W, Hudspeth Q, Warrender JM, Williams JS, Mathews J. Hyperdoped Silicon Characterization and Photodetectors Frontiers in Optics. DOI: 10.1364/Fio.2017.Jw4A.51 |
0.365 |
|
| 2017 |
Zhao Y, Lombardo D, Mathews J, Agha I. All-optical switching via four-wave mixing Bragg scattering in a silicon platform Arxiv: Optics. 2: 26102. DOI: 10.1063/1.4973771 |
0.654 |
|
| 2017 |
Yang W, Mathews J, Williams JS. Hyperdoping of Si by ion implantation and pulsed laser melting Materials Science in Semiconductor Processing. 62: 103-114. DOI: 10.1016/J.Mssp.2016.11.005 |
0.325 |
|
| 2016 |
Zhao Y, Lombardo D, Mathews J, Agha I. Low control-power wavelength conversion on a silicon chip. Optics Letters. 41: 3651-3654. PMID 27472641 DOI: 10.1364/Ol.41.003651 |
0.651 |
|
| 2016 |
Mathews J, Li Z, Zhao Y, Gallagher JD, Agha I, Menéndez J, Kouvetakis J. Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature Ecs Transactions. 75: 163-176. DOI: 10.1149/07508.0163ecst |
0.65 |
|
| 2016 |
Warrender JM, Hudspeth Q, Malladi G, Efstathiadis H, Mathews J. Incorporation of gold into silicon by thin film deposition and pulsed laser melting Applied Physics Letters. 109: 231104. DOI: 10.1063/1.4971358 |
0.315 |
|
| 2016 |
Hutchinson D, Mathews J, Sullivan JT, Akey A, Aziz MJ, Buonassisi T, Persans P, Warrender JM. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur Aip Advances. 6. DOI: 10.1063/1.4948986 |
0.329 |
|
| 2014 |
Mailoa JP, Akey AJ, Simmons CB, Hutchinson D, Mathews J, Sullivan JT, Recht D, Winkler MT, Williams JS, Warrender JM, Persans PD, Aziz MJ, Buonassisi T. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nature Communications. 5: 3011. PMID 24385050 DOI: 10.1038/Ncomms4011 |
0.404 |
|
| 2014 |
Jiang L, Gallagher JD, Senaratne CL, Aoki T, Mathews J, Kouvetakis J, Menéndez J. Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115028 |
0.519 |
|
| 2014 |
Warrender JM, Mathews J, Recht D, Smith M, Gradečak S, Aziz MJ. Morphological stability during solidification of silicon incorporating metallic impurities Journal of Applied Physics. 115. DOI: 10.1063/1.4871809 |
0.337 |
|
| 2014 |
Mathews J, Akey AJ, Recht D, Malladi G, Efstathiadis H, Aziz MJ, Warrender JM. On the limits to Ti incorporation into Si using pulsed laser melting Applied Physics Letters. 104. DOI: 10.1063/1.4868724 |
0.325 |
|
| 2011 |
Roucka R, Mathews J, Weng C, Beeler R, Tolle J, Menéndez J, Kouvetakis J. High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon Ieee Journal of Quantum Electronics. 47: 213-222. DOI: 10.1109/Jqe.2010.2077273 |
0.422 |
|
| 2011 |
Grzybowski G, Roucka R, Mathews J, Jiang L, Beeler RT, Kouvetakis J, Menéndez J. Direct versus indirect optical recombination in Ge films grown on Si substrates Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205307 |
0.528 |
|
| 2011 |
Grzybowski G, Jiang L, Mathews J, Roucka R, Xu C, Beeler RT, Kouvetakis J, Meńndez J. Photoluminescence from heavily doped GeSn:P materials grown on Si(100) Applied Physics Letters. 99. DOI: 10.1063/1.3655679 |
0.377 |
|
| 2011 |
Roucka R, Beeler R, Mathews J, Ryu MY, Kee Yeo Y, Menéndez J, Kouvetakis J. Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100) Journal of Applied Physics. 109. DOI: 10.1063/1.3592965 |
0.557 |
|
| 2011 |
Roucka R, Mathews J, Beeler RT, Tolle J, Kouvetakis J, Meńndez J. Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes Applied Physics Letters. 98. DOI: 10.1063/1.3554747 |
0.377 |
|
| 2011 |
Beeler RT, Grzybowski GJ, Roucka R, Jiang L, Mathews J, Smith DJ, Menéndez J, Chizmeshya AVG, Kouvetakis J. Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices Chemistry of Materials. 23: 4480-4486. DOI: 10.1021/Cm201648X |
0.567 |
|
| 2010 |
Kouvetakis J, Mathews J, Roucka R, Chizmeshya AVG, Tolle J, Menendez J. Practical materials chemistry approaches for tuning optical and structural properties of group IV semiconductors and prototype photonic devices Ieee Photonics Journal. 2: 924-941. DOI: 10.1109/Jphot.2010.2081357 |
0.555 |
|
| 2010 |
Mathews J, Beeler RT, Tolle J, Xu C, Roucka R, Kouvetakis J, Meńndez J. Direct-gap photoluminescence with tunable emission wavelength in Ge 1-y Sny alloys on silicon Applied Physics Letters. 97. DOI: 10.1063/1.3521391 |
0.383 |
|
| 2010 |
Beeler R, Mathews J, Weng C, Tolle J, Roucka R, Chizmeshya AVG, Juday R, Bagchi S, Menndez J, Kouvetakis J. Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications Solar Energy Materials and Solar Cells. 94: 2362-2370. DOI: 10.1016/J.Solmat.2010.08.016 |
0.537 |
|
| 2009 |
D'Costa VR, Fang Y, Mathews J, Roucka R, Tolle J, Menéndez J, Kouvetakis J. Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/11/115006 |
0.706 |
|
| 2009 |
Mathews J, Roucka R, Xie J, Yu S, Menéndez J, Kouvetakis J. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications Applied Physics Letters. 95: 133506. DOI: 10.1063/1.3238327 |
0.566 |
|
| 2008 |
Roucka R, Xie J, Kouvetakis J, Mathews J, D’Costa V, Menéndez J, Tolle J, Yu S. Ge1−ySny photoconductor structures at 1.55μm: From advanced materials to prototype devices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1952-1959. DOI: 10.1116/1.3021024 |
0.545 |
|
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