| Year |
Citation |
Score |
| 2012 |
Nieuwendaal RC, Ro HW, Germack DS, Kline RJ, Toney MF, Chan CK, Agrawal A, Gundlach D, VanderHart DL, Delongchamp DM. Measuring domain sizes and compositional heterogeneities in P3HT-PCBM bulk heterojunction thin films with 1H spin diffusion NMR spectroscopy Advanced Functional Materials. 22: 1255-1266. DOI: 10.1002/Adfm.201102138 |
0.31 |
|
| 2010 |
O'Connor B, Chan EP, Chan C, Conrad BR, Richter LJ, Kline RJ, Heeney M, McCulloch I, Soles CL, DeLongchamp DM. Correlations between mechanical and electrical properties of polythiophenes. Acs Nano. 4: 7538-44. PMID 21080648 DOI: 10.1021/Nn1018768 |
0.42 |
|
| 2010 |
Conrad BR, Chan CK, Loth MA, Parkin SR, Zhang X, Delongchamp DM, Anthony JE, Gundlach DJ. Characterization of a soluble anthradithiophene derivative Applied Physics Letters. 97. DOI: 10.1063/1.3495998 |
0.301 |
|
| 2010 |
Chan CK, Richter LJ, Dinardo B, Jaye C, Conrad BR, Ro HW, Germack DS, Fischer DA, Delongchamp DM, Gundlach DJ. High performance airbrushed organic thin film transistors Applied Physics Letters. 96. DOI: 10.1063/1.3360230 |
0.449 |
|
| 2010 |
Germack DS, Chan CK, Joseph Kline R, Fischer DA, Gundlach DJ, Toney MF, Richter LJ, Delongchamp DM. Interfacial segregation in polymer/fullerene blend films for photovoltaic devices Macromolecules. 43: 3828-3836. DOI: 10.1021/Ma100027B |
0.376 |
|
| 2009 |
Germack DS, Chan CK, Hamadani BH, Richter LJ, Fischer DA, Gundlach DJ, Delongchamp DM. Substrate-dependent interface composition and charge transport in films for organic photovoltaics Applied Physics Letters. 94. DOI: 10.1063/1.3149706 |
0.444 |
|
| 2009 |
Chan CK, Zhao W, Kahn A, Hill IG. Influence of chemical doping on the performance of organic photovoltaic cells Applied Physics Letters. 94. DOI: 10.1063/1.3138131 |
0.694 |
|
| 2009 |
Chan CK, Kahn A. N-doping of pentacene by decamethylcobaltocene Applied Physics a: Materials Science and Processing. 95: 7-13. DOI: 10.1007/S00339-008-4997-X |
0.616 |
|
| 2008 |
Tal O, Epstein I, Snir O, Roichman Y, Ganot Y, Chan CK, Kahn A, Tessler N, Rosenwaks Y. Measurements of the Einstein relation in doped and undoped molecular thin films Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.201201 |
0.584 |
|
| 2008 |
Zhan X, Haldi A, Risko C, Chan CK, Zhao W, Timofeeva TV, Korlyukov A, Antipin MY, Montgomery S, Thompson E, An Z, Domercq B, Barlow S, Kahn A, Kippelen B, et al. Fluorenyl-substituted silole molecules: Geometric, electronic, optical, and device properties Journal of Materials Chemistry. 18: 3157-3166. DOI: 10.1039/B803470B |
0.572 |
|
| 2008 |
Chan CK, Zhao W, Barlow S, Marder S, Kahn A. Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices Organic Electronics: Physics, Materials, Applications. 9: 575-581. DOI: 10.1016/J.Orgel.2008.03.003 |
0.661 |
|
| 2007 |
Seitz O, Vilan A, Cohen H, Chan C, Hwang J, Kahn A, Cahen D. Effect of doping on electronic transport through molecular monolayer junctions. Journal of the American Chemical Society. 129: 7494-5. PMID 17523646 DOI: 10.1021/Ja071960P |
0.583 |
|
| 2007 |
Barlow S, Zhang Q, Kaafarani BR, Risko C, Amy F, Chan CK, Domercq B, Starikova ZA, Antipin MY, Timofeeva TV, Kippelen B, Brédas JL, Kahn A, Marder SR. Synthesis, ionisation potentials and electron affinities of hexaazatrinaphthylene derivatives. Chemistry (Weinheim An Der Bergstrasse, Germany). 13: 3537-47. PMID 17226870 DOI: 10.1002/Chem.200601298 |
0.564 |
|
| 2007 |
Chan CK, Kahn A, Zhang Q, Barlow S, Marder SR. Incorporation of cobaltocene as an n -dopant in organic molecular films Journal of Applied Physics. 102. DOI: 10.1063/1.2752145 |
0.607 |
|
| 2007 |
Watkins NJ, Zangmeister CD, Chan CK, Zhao W, Ciszek JW, Tour JM, Kahn A, van Zee RD. Electron spectra of a self-assembled monolayer on gold: Inverse photoemission and two-photon photoemission spectroscopy Chemical Physics Letters. 446: 359-364. DOI: 10.1016/J.Cplett.2007.08.070 |
0.573 |
|
| 2007 |
Salomon A, Boecking T, Seitz O, Markus T, Amy F, Chan C, Zhao W, Cahen D, Kahn A. What is the barrier for tunneling through alkyl monolayers? Results from n- And p-Si-Alkyl/Hg junctions Advanced Materials. 19: 445-450. DOI: 10.1002/Adma.200601729 |
0.534 |
|
| 2006 |
Amy F, Chan CK, Zhao W, Hyung J, Ono M, Sueyoshi T, Kera S, Nesher G, Salomon A, Segev L, Seitz O, Shpaisman H, Schöll A, Haeming M, Böcking T, et al. Radiation damage to alkyl chain monolayers on semiconductor substrates investigated by electron spectroscopy. The Journal of Physical Chemistry. B. 110: 21826-32. PMID 17064146 DOI: 10.1021/Jp063614K |
0.568 |
|
| 2006 |
Nesher G, Vilan A, Cohen H, Cahen D, Amy F, Chan C, Hwang J, Kahn A. Energy level and band alignment for GaAs-alkylthiol monolayer-Hg junctions from electrical transport and photoemission experiments. The Journal of Physical Chemistry. B. 110: 14363-71. PMID 16854143 DOI: 10.1021/Jp062181I |
0.579 |
|
| 2006 |
Segev L, Salomon A, Natan A, Cahen D, Kronik L, Amy F, Chan CK, Kahn A. Electronic structure of Si(111)-bound alkyl monolayers: Theory and experiment Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.165323 |
0.501 |
|
| 2006 |
Tal O, Rosenwaks Y, Roichman Y, Preezant Y, Tessler N, Chan CK, Kahn A. Threshold voltage as a measure of molecular level shift in organic thin-film transistors Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2167395 |
0.553 |
|
| 2006 |
Chan CK, Amy F, Zhang Q, Barlow S, Marder S, Kahn A. N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene Chemical Physics Letters. 431: 67-71. DOI: 10.1016/J.Cplett.2006.09.034 |
0.619 |
|
| 2006 |
Chan CK, Kim EG, Brédas JL, Kahn A. Molecular n-type doping of 1,4,5,8-naphthalene tetracarboxylic dianhydride by pyronin B studied using direct and inverse photoelectron spectroscopies Advanced Functional Materials. 16: 831-837. DOI: 10.1002/Adfm.200500402 |
0.611 |
|
| 2005 |
Salomon A, Boecking T, Chan CK, Amy F, Girshevitz O, Cahen D, Kahn A. How do electronic carriers cross Si-bound alkyl monolayers? Physical Review Letters. 95: 266807. PMID 16486388 DOI: 10.1103/Physrevlett.95.266807 |
0.541 |
|
| 2005 |
Tal O, Rosenwaks Y, Preezant Y, Tessler N, Chan CK, Kahn A. Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution. Physical Review Letters. 95: 256405. PMID 16384485 DOI: 10.1103/Physrevlett.95.256405 |
0.619 |
|
| 2005 |
Zhan X, Risko C, Amy F, Chan C, Zhao W, Barlow S, Kahn A, Brédas JL, Marder SR. Electron affinities of 1,1-diaryl-2,3,4,5-tetraphenylsiloles: direct measurements and comparison with experimental and theoretical estimates. Journal of the American Chemical Society. 127: 9021-9. PMID 15969579 DOI: 10.1021/Ja051139I |
0.571 |
|
| 2005 |
Tal O, Rosenwaks Y, Roichman Y, Tessler N, Chan CK, Kahn A. Nanoscale measurements of electronic properties in organic thin film transistors Materials Research Society Symposium Proceedings. 871: 126-131. DOI: 10.1557/Proc-871-I4.5 |
0.602 |
|
| 2005 |
Wang Y, Gao W, Braun S, Salaneck WR, Amy F, Chan C, Kahn A. Enhancement of iridium-based organic light-emitting diodes by spatial doping of the hole transport layer Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117623 |
0.668 |
|
| 2005 |
Amy F, Chan C, Kahn A. Polarization at the gold/pentacene interface Organic Electronics: Physics, Materials, Applications. 6: 85-91. DOI: 10.1016/J.Orgel.2005.03.003 |
0.582 |
|
| 2004 |
Chan C, Gao W, Kahn A. Contact potential difference measurements of doped organic molecular thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 1488-1492. DOI: 10.1116/1.1688363 |
0.706 |
|
| 2004 |
Tal O, Gao W, Chan CK, Kahn A, Rosenwaks Y. Measurement of interface potential change and space charge region across metal/organic/metal structures using Kelvin probe force microscopy Applied Physics Letters. 85: 4148-4150. DOI: 10.1063/1.1811805 |
0.502 |
|
| 2003 |
Koch N, Chan C, Kahn A, Schwartz J. Lack of thermodynamic equilibrium in conjugated organic molecular thin films Physical Review B - Condensed Matter and Materials Physics. 67: 1953301-1953305. DOI: 10.1103/Physrevb.67.195330 |
0.642 |
|
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