Year |
Citation |
Score |
2017 |
Park C, Kan JJ, Ching C, Ahn J, Xue L, Wang R, Kontos A, Liang S, Bangar M, Chen H, Hassan S, Kim S, Pakala M, Kang SH. Temperature Dependence of Critical Device Parameters in 1 Gb Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAM Ieee Transactions On Magnetics. 53: 1-4. DOI: 10.1109/Tmag.2016.2615816 |
0.352 |
|
2017 |
Kan JJ, Park C, Ching C, Ahn J, Xie Y, Pakala M, Kang SH. A Study on Practically Unlimited Endurance of STT-MRAM Ieee Transactions On Electron Devices. 64: 3639-3646. DOI: 10.1109/Ted.2017.2731959 |
0.314 |
|
2015 |
Kan JJ, Gottwald M, Park C, Zhu X, Kang SH. Thermally Robust Perpendicular STT-MRAM Free Layer Films Through Capping Layer Engineering Ieee Transactions On Magnetics. 51. DOI: 10.1109/Tmag.2015.2463759 |
0.465 |
|
2015 |
Gottwald M, Kan JJ, Lee K, Zhu X, Park C, Kang SH. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM Applied Physics Letters. 106. DOI: 10.1063/1.4906600 |
0.406 |
|
2009 |
Park C, Miloslavsky L, Lim I, Oh S, Kaiser C, Leng Q, Pakala M. Influence of Boron Diffusion on Transport and Magnetic Properties in CoFeB/MgO/CoFeB Magnetic Tunnel Junction Ieee Transactions On Magnetics. 45: 3457-3459. DOI: 10.1109/Tmag.2009.2022495 |
0.423 |
|
2009 |
Park J, Moneck MT, Park C, Zhu J. Spin-transfer induced switching in nanomagnetoresistive devices composed of Co/Pt multilayers with perpendicular magnetic anisotropy Journal of Applied Physics. 105. DOI: 10.1063/1.3072822 |
0.343 |
|
2008 |
Park J, Park C, Zhu J. Interfacial Oxidation Enhanced Perpendicular Magnetic Anisotropy in Low Resistance Magnetic Tunnel Junctions Composed of Co/Pt Multilayer Electrodes Ieee Transactions On Magnetics. 44: 2577-2580. DOI: 10.1109/Tmag.2008.2003071 |
0.439 |
|
2008 |
Park J, Park C, Jeong T, Moneck MT, Nufer NT, Zhu J. Co /Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy Journal of Applied Physics. 103. DOI: 10.1063/1.2838754 |
0.464 |
|
2006 |
Wang Y, Chen W, Yang S, Shen K, Park C, Kao M, Tsai M. Interfacial and annealing effects on magnetic properties of CoFeB thin films Journal of Applied Physics. 99. DOI: 10.1063/1.2176108 |
0.407 |
|
2006 |
Zhu J(, Park C. Magnetic tunnel junctions Materials Today. 9: 36-45. DOI: 10.1016/S1369-7021(06)71693-5 |
0.413 |
|
2005 |
Park C, Zhu JG, Peng Y, Laughlin DE, White RM. Inverse magnetoresistance in magnetic tunnel junction with a plasma-oxidized Fe electrode and the effect of annealing on its transport properties Journal of Applied Physics. 97. DOI: 10.1063/1.1850332 |
0.428 |
|
2005 |
Park C, Peng Y, Zhu JG, Laughlin DE, White RM. Magnetoresistance of polycrystalline Fe 3O 4 films prepared by reactive sputtering at room temperature Journal of Applied Physics. 97. DOI: 10.1063/1.1847853 |
0.521 |
|
2004 |
Peng Y, Park C, Zhu JG, White RM, Laughlin DE. Characterization of interfacial reactions in magnetite tunnel junctions with transmission electron microscopy Journal of Applied Physics. 95: 6798-6800. DOI: 10.1063/1.1688535 |
0.468 |
|
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