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Joseph P. Long, Ph.D. - Publications

Affiliations: 
North Carolina State University, Raleigh, NC 
Area:
ultra-thin Si oxyitride devices
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Lucovsky G, Long JP, Chung KB, Seo H. Atomically-engineered interfaces between crystalline-Ge substrates and i) Nanocrystalline HfO2 and ii) Non-Crystalline Hf Si oxynitride high-K dielectrics? E-Journal of Surface Science and Nanotechnology. 7: 381-388. DOI: 10.1380/Ejssnt.2009.381  0.567
2009 Seo H, Chung KB, Long JP, Lucovsky G. Preparation of native oxide and carbon-minimized ge surface by NH 4OH -based cleaning for high- k/Ge MOS gate stacks Journal of the Electrochemical Society. 156: H813-H817. DOI: 10.1149/1.3212848  0.441
2009 Lucovsky G, Long JP, Chung KB, Seo H, Watts B, Vasic R, Ulrich MD. Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 294-299. DOI: 10.1116/1.3072917  0.635
2009 Chung KB, Long JP, Seo H, Lucovsky G, Nordlund D. Thermal evolution and electrical correlation of defect states in Hf-based high- κ dielectrics on n -type Ge (100): Local atomic bonding symmetry Journal of Applied Physics. 106. DOI: 10.1063/1.3236679  0.42
2009 Lucovsky G, Lee S, Long JP, Seo H, Lüning J. Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks Microelectronic Engineering. 86: 224-234. DOI: 10.1016/J.Mee.2008.05.023  0.615
2009 Lucovsky G, Seo H, Long JP, Chung KB, Vasic R, Ulrich M. Defect states in HfO2 on deposited on Ge(1 1 1) and Ge(1 0 0) substrates Applied Surface Science. 255: 6443-6450. DOI: 10.1016/J.Apsusc.2008.09.070  0.633
2008 Lucovsky G, Long JP, Seo H, Chung BK, Lee S. Elimination of native Ge dielectrics at Ge/High-k dielectric interfaces for Ge MOS devices Ecs Transactions. 16: 381-395. DOI: 10.1149/1.2986796  0.481
2008 Chung KB, Seo H, Long JP, Lucovsky G. Suppression of defect states in HfSiON gate dielectric films on n -type Ge(100) substrates Applied Physics Letters. 93. DOI: 10.1063/1.3005422  0.541
2008 Lee S, Long JP, Lucovsky G, Lüning J. Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates Thin Solid Films. 517: 155-158. DOI: 10.1016/J.Tsf.2008.08.099  0.546
2008 Lee S, Long JP, Lucovsky G, Whitten JL, Seo H, Lüning J. Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices Microelectronics Reliability. 48: 364-369. DOI: 10.1016/J.Microrel.2007.07.068  0.616
2008 Lucovsky G, Lee S, Long JP, Seo H, Lüning J. Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates Applied Surface Science. 254: 7933-7937. DOI: 10.1016/J.Apsusc.2008.03.157  0.617
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