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Yiqun Liu, Ph.D. - Publications

Affiliations: 
2011 Harvard University, Cambridge, MA, United States 
Area:
applied mathematics, quantum mechanics, spectroscopy, intermolecular forces, solid state and materials science
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Han H, Zhang Q, Li W, Liu Y, Guo J, Wang Y, Li Q, Gu L, Nan CW, Ma J. Interfacial Oxygen Octahedral Coupling-Driven Robust Ferroelectricity in Epitaxial NaBiTiO Thin Films. Research (Washington, D.C.). 6: 0191. PMID 37465161 DOI: 10.34133/research.0191  0.357
2020 Li Y, Pan G, Wang J, Zhang Y, Shi H, Yu H, Liu Y. Tailoring the Polyamide Active Layer of Thin-Film Composite Forward Osmosis Membranes with Combined Cosolvents during Interfacial Polymerization Industrial & Engineering Chemistry Research. 59: 8230-8242. DOI: 10.1021/acs.iecr.0c00682  0.311
2019 Liu Y, Kim H, Wang J, Li H, Gordon RG. Effects of Low Temperature O2 Treatment on the Electrical Characteristics of Amorphous LaAlO3 Films by Atomic Layer Deposition Ecs Transactions. 16: 471-478. DOI: 10.1149/1.2981628  0.415
2015 Wang H, Madaan N, Bagley J, Diwan A, Liu Y, Davis RC, Lunt BM, Smith SJ, Linford MR. Spectroscopic ellipsometric modeling of a Bi-Te-Se write layer of an optical data storage device as guided by atomic force microscopy, scanning electron microscopy, and X-ray diffraction Thin Solid Films. 569: 124-130. DOI: 10.1016/J.Tsf.2014.08.026  0.331
2013 Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG. Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9. PMID 23294262 DOI: 10.1021/Nl3041349  0.605
2012 Lee SW, Liu Y, Heo J, Gordon RG. Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO₃ heterostructures grown by atomic layer deposition. Nano Letters. 12: 4775-83. PMID 22908907 DOI: 10.1021/Nl302214X  0.59
2012 Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/J.Sse.2012.05.044  0.444
2011 Shen S, Liu Y, Gordon RG, Brillson LJ. Impact of ultrathin Al2O3 diffusion barriers on defects in high- k LaLuO3 on Si Applied Physics Letters. 98. DOI: 10.1063/1.3583462  0.52
2011 Liu Y, Shen S, Brillson LJ, Gordon RG. Impact of ultrathin Al2 O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices Applied Physics Letters. 98. DOI: 10.1063/1.3563713  0.602
2011 Heo J, Liu Y, Sinsermsuksakul P, Li Z, Sun L, Noh W, Gordon RG. (Sn,Al)Ox films grown by atomic layer deposition Journal of Physical Chemistry C. 115: 10277-10283. DOI: 10.1021/Jp202202X  0.568
2010 Au Y, Lin Y, Kim H, Beh E, Liu Y, Gordon RG. Selective chemical vapor deposition of manganese self-aligned capping layer for cu interconnections in microelectronics Journal of the Electrochemical Society. 157: D341-D345. DOI: 10.1149/1.3364799  0.622
2010 Liu Y, Xu M, Heo J, Ye PD, Gordon RG. Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition Applied Physics Letters. 97. DOI: 10.1063/1.3504254  0.644
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