Daniel C. Worledge, Ph.D. - Publications

Affiliations: 
2000 Stanford University, Palo Alto, CA 
Area:
Condensed Matter, Nano Sci/Eng, Synchrotron Radiation

17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Kent AD, Worledge DC. A new spin on magnetic memories. Nature Nanotechnology. 10: 187-91. PMID 25740126 DOI: 10.1038/Nnano.2015.24  0.432
2013 Sun JZ, Brown SL, Chen W, Delenia EA, Gaidis MC, Harms J, Hu G, Jiang X, Kilaru R, Kula W, Lauer G, Liu LQ, Murthy S, Nowak J, O'Sullivan EJ, ... ... Worledge DC, et al. Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/PhysRevB.88.104426  0.301
2012 Worledge DC, Gajek M, Abraham DW, Brown S, Gaidis MC, Hu G, Nowak J, O'Sullivan EJ, Robertazzi RP, Sun JZ, Trouilloud PL, Gallagher WJ. Recent advances in spin torque MRAM 2012 4th Ieee International Memory Workshop, Imw 2012. DOI: 10.1109/IMW.2012.6213652  0.3
2012 Gajek M, Nowak JJ, Sun JZ, Trouilloud PL, O'Sullivan EJ, Abraham DW, Gaidis MC, Hu G, Brown S, Zhu Y, Robertazzi RP, Gallagher WJ, Worledge DC. Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy Applied Physics Letters. 100. DOI: 10.1063/1.3694270  0.314
2011 Sun JZ, Robertazzi RP, Nowak JJ, Trouilloud PL, Hu G, Gaidis MC, Brown SL, Abraham DW, O'Sullivan EJ, Gallagher WJ, Worledge DC, Kent AD. Spin-torque switchable perpendicular magnetic junctions for solid-state memory Device Research Conference - Conference Digest, Drc. 171-174. DOI: 10.1109/DRC.2011.5994475  0.308
2011 Worledge DC, Hu G, Abraham DW, Sun JZ, Trouilloud PL, Nowak J, Brown S, Gaidis MC, O'Sullivan EJ, Robertazzi RP. Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions Applied Physics Letters. 98. DOI: 10.1063/1.3536482  0.322
2009 Konovalenko A, Lindgren E, Cherepov SS, Korenivski V, Worledge DC. Spin dynamics of two-coupled nanomagnets in spin-flop tunnel junctions Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.144425  0.301
2004 Worledge DC. Spin flop switching for magnetic random access memory Applied Physics Letters. 84: 4559-4561. DOI: 10.1063/1.1759376  0.301
2000 Worledge DC, Geballe TH. Negative spin-polarization of SrRuO3 Physical Review Letters. 85: 5182-5. PMID 11102216 DOI: 10.1103/PhysRevLett.85.5182  0.473
2000 Worledge DC, Geballe TH. Magnetoresistive double spin filter tunnel junction Journal of Applied Physics. 88: 5277-5279. DOI: 10.1063/1.1315619  0.457
2000 Worledge DC, Geballe TH. Spin-polarized tunneling in La0.67Sr0.33MnO3 Applied Physics Letters. 76: 900-902. DOI: 10.1063/1.125623  0.488
2000 Worledge DC, Geballe TH. Maki analysis of spin-polarized tunneling in an oxide ferromagnet Physical Review B - Condensed Matter and Materials Physics. 62: 447-451.  0.476
2000 Cao D, Bridges F, Worledge DC, Booth CH, Geballe T. Effect of annealing temperature on local distortion of La0.67Ca0.33MnO3 thin films Physical Review B - Condensed Matter and Materials Physics. 61: 11373-11378.  0.416
1998 Mieville L, Worledge D, Geballe TH, Contreras R, Char K. Transport across conducting ferromagnetic oxide/metal interfaces Applied Physics Letters. 73: 1736-1738. DOI: 10.1063/1.122261  0.346
1998 Worledge DC, Miéville L, Geballe TH. On-site Coulomb repulsion in the small polaron system La1-xCaxMnO3 Physical Review B - Condensed Matter and Materials Physics. 57: 15267-15271.  0.356
1998 Worledge DC, Miéville L, Geballe TH. Growth and small polaron properties of epitaxial La1-xCaxMnO3 thin films Journal of Applied Physics. 83: 5913-5916.  0.387
1996 Worledge DC, Snyder GJ, Beasley MR, Geballe TH, Hiskes R, DiCarolis S. Anneal-tunable Curie temperature and transport of La0.67Ca0.33MnO3 Journal of Applied Physics. 80: 5158-5161. DOI: 10.1063/1.363498  0.47
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