Year |
Citation |
Score |
2019 |
Cho JE, Kim S, Son S, Yang J, Kang MS, Eom SH, Yoon SC, Kim MH, Kim B. Poly(N-isopropylacrylamide-co-methacrylic acid) Interfacial Layer for Efficient and Stable Inverted Organic Solar Cells The Journal of Physical Chemistry C. 123: 2755-2765. DOI: 10.1021/Acs.Jpcc.8B10871 |
0.339 |
|
2018 |
Sun J, Yang JH, Lee JI, Cho JH, Kang MS. Lead-Free Perovskite Nanocrystals for Light-Emitting Devices. The Journal of Physical Chemistry Letters. PMID 29521511 DOI: 10.1021/Acs.Jpclett.8B00301 |
0.365 |
|
2018 |
Koo J, Yang JH, Cho B, Jo H, Lee KH, Kang MS. Non-volatile Electric Double Layer Transistor Memory Embedded with Au Nanoparticles. Acs Applied Materials & Interfaces. PMID 29468869 DOI: 10.1021/Acsami.8B01902 |
0.346 |
|
2018 |
Ryu HS, Kim MJ, Kang MS, Cho JH, Woo HY. Dicyanodistyrylbenzene-Based Copolymers for Ambipolar Organic Field-Effect Transistors with Well-Balanced Hole and Electron Mobilities Macromolecules. 51: 8258-8267. DOI: 10.1021/Acs.Macromol.8B01700 |
0.329 |
|
2018 |
Choi Y, Kim H, Yang J, Shin SW, Um SH, Lee S, Kang MS, Cho JH. Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2 V–1 s–1 Chemistry of Materials. 30: 4527-4535. DOI: 10.1021/Acs.Chemmater.8B00568 |
0.355 |
|
2018 |
Choi YJ, Kim JS, Cho JY, Woo HJ, Yang JH, Song YJ, Kang MS, Han JT, Cho JH. Tunable Charge Injection via Solution-Processed Reduced Graphene Oxide Electrode for Vertical Schottky Barrier Transistors Chemistry of Materials. 30: 636-643. DOI: 10.1021/Acs.Chemmater.7B03460 |
0.343 |
|
2018 |
Kim S, Choi YJ, Woo HJ, Sun Q, Lee S, Kang MS, Song YJ, Wang ZL, Cho JH. Piezotronic graphene barristor: Efficient and interactive modulation of Schottky barrier Nano Energy. 50: 598-605. DOI: 10.1016/J.Nanoen.2018.06.010 |
0.326 |
|
2018 |
Choi Y, Kang J, Secor EB, Sun J, Kim H, Lim JA, Kang MS, Hersam MC, Cho JH. Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin-Film Transistors for Low Voltage Flexible Logic Circuits Advanced Functional Materials. 28: 1802610. DOI: 10.1002/Adfm.201802610 |
0.325 |
|
2017 |
Kim HJ, Yang HM, Koo J, Kang MS, Hong K, Lee KH. Area-controllable Stamping of Semicrystalline Copolymer Ionogels for Solid-state Electrolyte-gated Transistors and Light-emitting Devices. Acs Applied Materials & Interfaces. PMID 29144127 DOI: 10.1021/Acsami.7B12712 |
0.391 |
|
2017 |
Lee M, Kim MJ, Ro S, Choi S, Jin SM, Nguyen HD, Yang JH, Lee KK, Lim DU, Lee E, Kang MS, Choi JH, Cho JH, Kim B. A Non-Chlorinated-Solvent-Processable Fluorinated Planar Conjugated Polymer for Flexible Field-Effect Transistors. Acs Applied Materials & Interfaces. PMID 28783949 DOI: 10.1021/Acsami.7B08071 |
0.361 |
|
2017 |
Dathbun A, Kim Y, Kim S, Yoo Y, Kang MS, Lee C, Cho JH. Large-Area CVD-Grown Sub-2V ReS2 Transistors and Logic Gates. Nano Letters. PMID 28414455 DOI: 10.1021/Acs.Nanolett.7B00315 |
0.338 |
|
2017 |
Heo H, Lee MH, Yang JH, Wee HS, Lim J, Hahm D, Yu JW, Bae WK, Lee WB, Kang MS, Char K. Assemblies of Colloidal CdSe Tetrapod Nanocrystals with Lengthy Arms for Flexible Thin-Film Transistors. Nano Letters. PMID 28349694 DOI: 10.1021/Acs.Nanolett.7B00096 |
0.438 |
|
2017 |
Kim D, Kim Y, Lee S, Kang MS, Kim DH, Lee H. High Resolution a-IGZO TFT Pixel Circuit for Compensating Threshold Voltage Shifts and OLED Degradations Ieee Journal of the Electron Devices Society. 5: 372-377. DOI: 10.1109/Jeds.2017.2716368 |
0.316 |
|
2017 |
Kong SH, Lee JI, Kim S, Kang MS. Light-Emitting Devices Based on Electrochemiluminescence: Comparison to Traditional Light-Emitting Electrochemical Cells Acs Photonics. DOI: 10.1021/Acsphotonics.7B00864 |
0.306 |
|
2017 |
Lee J, Gim Y, Yang J, Jo H, Han J, Lee H, Kim DH, Huh W, Cho JH, Kang MS. Graphene Phototransistors Sensitized by Cu2-xSe Nanocrystals with Short Amine Ligands Journal of Physical Chemistry C. 121: 5436-5443. DOI: 10.1021/Acs.Jpcc.7B01212 |
0.369 |
|
2017 |
Choi Y, Kang J, Jariwala D, Wells SA, Kang MS, Marks TJ, Hersam MC, Cho JH. Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling Chemistry of Materials. 29: 4008-4013. DOI: 10.1021/Acs.Chemmater.7B00573 |
0.334 |
|
2017 |
Kim JS, Choi YJ, Woo HJ, Yang J, Song YJ, Kang MS, Cho JH. Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes Advanced Functional Materials. 27: 1704475. DOI: 10.1002/Adfm.201704475 |
0.34 |
|
2017 |
Kim S, Choi YJ, Choi Y, Kang MS, Cho JH. Large‐Area Schottky Barrier Transistors Based on Vertically Stacked Graphene–Metal Oxide Heterostructures Advanced Functional Materials. 27: 1700651. DOI: 10.1002/Adfm.201700651 |
0.352 |
|
2016 |
Lee J, Chung JW, Yoon G, Lee MH, Kim DH, Park J, Lee JK, Kang MS. Influence of Dielectric Layers on Charge Transport through Diketopyrrolopyrrole-Containing Polymer Films: Dielectric Polarizability vs. Capacitance. Acs Applied Materials & Interfaces. PMID 27754656 DOI: 10.1021/Acsami.6B09993 |
0.386 |
|
2016 |
Choi Y, Kang J, Jariwala D, Kang MS, Marks TJ, Hersam MC, Cho JH. Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures. Advanced Materials (Deerfield Beach, Fla.). PMID 27002478 DOI: 10.1002/Adma.201506450 |
0.318 |
|
2016 |
Lee J, Yang J, Park C, Kim JH, Kang MS. Electronic Properties of Cu2–xSe Nanocrystal Thin Films Treated with Short Ligand (S2–, SCN–, and Cl–) Solutions Journal of Physical Chemistry C. 120: 14899-14905. DOI: 10.1021/Acs.Jpcc.6B03214 |
0.412 |
|
2016 |
Kim H, Kim BJ, Sun Q, Kang MS, Cho JH. Graphene Transistors Gated by Salted Proton Conductor Advanced Electronic Materials. 2. DOI: 10.1002/Aelm.201600122 |
0.336 |
|
2016 |
Park S, Lee MH, Ahn KS, Choi HH, Shin J, Xu J, Mei J, Cho K, Bao Z, Lee DR, Kang MS, Kim DH. Polymer Semiconductors: Combinatorial Study of Temperature-Dependent Nanostructure and Electrical Conduction of Polymer Semiconductors: Even Bimodal Orientation Can Enhance 3D Charge Transport (Adv. Funct. Mater. 26/2016) Advanced Functional Materials. 26: 4617. DOI: 10.1002/Adfm.201670162 |
0.311 |
|
2016 |
Gim YS, Lee Y, Kim S, Hao S, Kang MS, Yoo WJ, Kim H, Wolverton C, Cho JH. Organic Dye Graphene Hybrid Structures with Spectral Color Selectivity Advanced Functional Materials. 26: 6593-6600. DOI: 10.1002/Adfm.201601200 |
0.35 |
|
2016 |
Park S, Lee MH, Ahn KS, Choi HH, Shin J, Xu J, Mei J, Cho K, Bao Z, Lee DR, Kang MS, Kim DH. Combinatorial Study of Temperature-Dependent Nanostructure and Electrical Conduction of Polymer Semiconductors: Even Bimodal Orientation Can Enhance 3D Charge Transport Advanced Functional Materials. DOI: 10.1002/Adfm.201601164 |
0.397 |
|
2015 |
Kim BJ, Hwang E, Kang MS, Cho JH. Electrolyte-Gated Graphene Schottky Barrier Transistors. Advanced Materials (Deerfield Beach, Fla.). PMID 26315936 DOI: 10.1002/Adma.201502020 |
0.332 |
|
2015 |
Lee J, Chung JW, Kim DH, Lee BL, Park JI, Lee S, Häusermann R, Batlogg B, Lee SS, Choi I, Kim IW, Kang MS. Thin Films of Highly Planar Semiconductor Polymers Exhibiting Band-like Transport at Room Temperature. Journal of the American Chemical Society. PMID 26068051 DOI: 10.1021/Jacs.5B04253 |
0.404 |
|
2015 |
Choi Y, Park WY, Kang MS, Yi GR, Lee JY, Kim YH, Cho JH. Monolithic metal oxide transistors. Acs Nano. 9: 4288-95. PMID 25777338 DOI: 10.1021/Acsnano.5B00700 |
0.322 |
|
2015 |
Lee J, Lee S, Lee MH, Kang MS. Quasi-unipolar pentacene films embedded with fullerene for non-volatile organic transistor memories Applied Physics Letters. 106: 63302. DOI: 10.1063/1.4908187 |
0.32 |
|
2014 |
Sahu A, Braga D, Waser O, Kang MS, Deng D, Norris DJ. Solid-phase flexibility in Ag2Se semiconductor nanocrystals. Nano Letters. 14: 115-21. PMID 24295334 DOI: 10.1021/Nl4041498 |
0.619 |
|
2014 |
Jo CH, Kim JH, Kim J, Oh MS, Kang MS, Kim MG, Kim YH, Ju BK, Park SK. Low-temperature annealed PbS quantum dot films for scalable and flexible ambipolar thin-film-transistors and circuits Journal of Materials Chemistry C. 2: 10305-10311. DOI: 10.1039/C4Tc01624F |
0.446 |
|
2014 |
Cho B, Yu SH, Lee MH, Lee J, Lee JY, Cho JH, Kang MS. Versatile threshold voltage control of OTFTs via discontinuous pn-heterojunction formation Organic Electronics. 15: 3439-3444. DOI: 10.1016/J.Orgel.2014.09.034 |
0.351 |
|
2013 |
Yu SH, Kim BJ, Kang MS, Kim SH, Han JH, Lee JY, Cho JH. In/Ga-free, inkjet-printed charge transfer doping for solution-processed ZnO. Acs Applied Materials & Interfaces. 5: 9765-9. PMID 24033188 DOI: 10.1021/Am402919F |
0.439 |
|
2013 |
Lee JS, Kim NH, Kang MS, Yu H, Lee DR, Oh JH, Chang ST, Cho JH. Wafer-scale patterning of reduced graphene oxide electrodes by transfer-and-reverse stamping for high performance OFETs. Small (Weinheim An Der Bergstrasse, Germany). 9: 2817-25. PMID 23589341 DOI: 10.1002/Smll.201300538 |
0.344 |
|
2013 |
Kang MS, Frisbie CD. A pedagogical perspective on ambipolar FETs. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 14: 1547-52. PMID 23494986 DOI: 10.1002/Cphc.201300014 |
0.313 |
|
2013 |
Kang MS, Sahu A, Frisbie CD, Norris DJ. Influence of silver doping on electron transport in thin films of PbSe nanocrystals. Advanced Materials (Deerfield Beach, Fla.). 25: 725-31. PMID 23161581 DOI: 10.1002/Adma.201203114 |
0.7 |
|
2013 |
Kim BJ, Lee HS, Lee JS, Cho S, Kim H, Son HJ, Ko MJ, Park S, Kang MS, Oh SY, Kim B, Cho JH. Correlation between crystallinity, charge transport, and electrical stability in an ambipolar polymer field-effect transistor based on poly(naphthalene- alt -diketopyrrolopyrrole) Journal of Physical Chemistry C. 117: 11479-11486. DOI: 10.1021/Jp400664R |
0.403 |
|
2013 |
Choi HH, Kang MS, Kim M, Kim H, Cho JH, Cho K. Decoupling the Bias‐Stress‐Induced Charge Trapping in Semiconductors and Gate‐Dielectrics of Organic Transistors Using a Double Stretched‐Exponential Formula Advanced Functional Materials. 23: 690-696. DOI: 10.1002/Adfm.201201545 |
0.313 |
|
2012 |
Kim BJ, Lee SK, Kang MS, Ahn JH, Cho JH. Coplanar-gate transparent graphene transistors and inverters on plastic. Acs Nano. 6: 8646-51. PMID 22954200 DOI: 10.1021/Nn3020486 |
0.315 |
|
2012 |
Lee KH, Kang MS, Zhang S, Gu Y, Lodge TP, Frisbie CD. "Cut and stick" rubbery ion gels as high capacitance gate dielectrics. Advanced Materials (Deerfield Beach, Fla.). 24: 4457-62. PMID 22760996 DOI: 10.1002/Adma.201200950 |
0.322 |
|
2012 |
Sahu A, Kang MS, Kompch A, Notthoff C, Wills AW, Deng D, Winterer M, Frisbie CD, Norris DJ. Electronic impurity doping in CdSe nanocrystals. Nano Letters. 12: 2587-94. PMID 22533700 DOI: 10.1021/Nl300880G |
0.742 |
|
2012 |
Hwang H, Joo P, Kang MS, Ahn G, Han JT, Kim BS, Cho JH. Highly tunable charge transport in layer-by-layer assembled graphene transistors. Acs Nano. 6: 2432-40. PMID 22314208 DOI: 10.1021/Nn2047197 |
0.337 |
|
2012 |
Park SY, Kim BJ, Kim K, Kang MS, Lim KH, Lee TI, Myoung JM, Baik HK, Cho JH, Kim YS. Low-Temperature, solution-processed and alkali metal doped ZnO for high-performance thin-film transistors. Advanced Materials (Deerfield Beach, Fla.). 24: 834-8. PMID 22228295 DOI: 10.1002/Adma.201103173 |
0.387 |
|
2012 |
Wills AW, Kang MS, Wentz KM, Hayes SE, Sahu A, Gladfelter WL, Norris DJ. Synthesis and characterization of Al- and In-doped CdSe nanocrystals Journal of Materials Chemistry. 22: 6335-6342. DOI: 10.1039/C2Jm00068G |
0.74 |
|
2012 |
Lee HS, Kang MS, Kang SK, Kim BJ, Yoo Y, Lim HS, Um SH, Ryu DY, Lee DR, Cho JH. Surface viscoelasticity of an organic interlayer affects the crystalline nanostructure of an organic semiconductor and its electrical performance Journal of Physical Chemistry C. 116: 21673-21678. DOI: 10.1021/Jp305820R |
0.318 |
|
2011 |
Kang MS, Sahu A, Norris DJ, Frisbie CD. Size- and temperature-dependent charge transport in PbSe nanocrystal thin films. Nano Letters. 11: 3887-92. PMID 21846116 DOI: 10.1021/Nl2020153 |
0.675 |
|
2011 |
Sahu A, Qi L, Kang MS, Deng D, Norris DJ. Facile synthesis of silver chalcogenide (Ag2E; E=Se, S, Te) semiconductor nanocrystals. Journal of the American Chemical Society. 133: 6509-12. PMID 21486029 DOI: 10.1021/Ja200012E |
0.67 |
|
2011 |
Kim BJ, Kang MS, Pham VH, Cuong TV, Kim EJ, Chung JS, Hur SH, Cho JH. Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide Journal of Materials Chemistry. 21: 13068-13073. DOI: 10.1039/C1Jm11691F |
0.409 |
|
2010 |
Wills AW, Kang MS, Khare A, Gladfelter WL, Norris DJ. Thermally degradable ligands for nanocrystals. Acs Nano. 4: 4523-30. PMID 20731435 DOI: 10.1021/Nn100637U |
0.743 |
|
2010 |
Kang MS, Sahu A, Norris DJ, Frisbie CD. Size-dependent electrical transport in CdSe nanocrystal thin films. Nano Letters. 10: 3727-32. PMID 20731368 DOI: 10.1021/Nl102356X |
0.698 |
|
2010 |
Wills AW, Kang MS, Khare A, Gladfelter W, Norris D. The use of thermally decomposable ligands for conductive films of semiconductor nanocrystals Materials Research Society Symposium Proceedings. 1260: 137-142. DOI: 10.1557/Proc-1260-T12-03 |
0.765 |
|
2010 |
Leschkies KS, Kang MS, Aydil ES, Norris DJ. Influence of atmospheric gases on the electrical properties of PbSe quantum-dot films Journal of Physical Chemistry C. 114: 9988-9996. DOI: 10.1021/Jp101695S |
0.752 |
|
2009 |
Leschkies KS, Beatty TJ, Kang MS, Norris DJ, Aydil ES. Solar cells based on junctions between colloidal PbSe nanocrystals and thin ZnO films. Acs Nano. 3: 3638-48. PMID 19842707 DOI: 10.1021/Nn901139D |
0.75 |
|
2009 |
Kang MS, Lee J, Norris DJ, Frisbie CD. High carrier densities achieved at low voltages in Ambipolar PbSe nanocrystal thin-film transistors. Nano Letters. 9: 3848-52. PMID 19775167 DOI: 10.1021/Nl902062X |
0.613 |
|
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