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Christopher R. Newman, Ph.D. - Publications

Affiliations: 
2005 University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Organic and Molecular Electronics
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25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Usta H, Newman C, Chen Z, Facchetti A. Dithienocoronenediimide-based copolymers as novel ambipolar semiconductors for organic thin-film transistors. Advanced Materials (Deerfield Beach, Fla.). 24: 3678-84. PMID 22689261 DOI: 10.1002/Adma.201201014  0.416
2012 Huang H, Chen Z, Ponce Ortiz R, Newman C, Usta H, Lou S, Youn J, Noh YY, Baeg KJ, Chen LX, Facchetti A, Marks TJ, Marks T. Combining electron-neutral building blocks with intramolecular "conformational locks" affords stable, high-mobility p- and n-channel polymer semiconductors. Journal of the American Chemical Society. 134: 10966-73. PMID 22679903 DOI: 10.1021/Ja303401S  0.338
2012 Cheng X, Caironi M, Noh YY, Newman C, Wang J, Lee MJ, Banger K, Di Pietro R, Facchetti A, Sirringhaus H. Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes Organic Electronics: Physics, Materials, Applications. 13: 320-328. DOI: 10.1016/J.Orgel.2011.12.001  0.408
2011 Luzio A, Musumeci C, Newman CR, Facchetti A, Marks TJ, Pignataro B. Enhanced thin-film transistor performance by combining 13,6-N- sulfinylacetamidopentacene with printed PEDOT:PSS electrodes Chemistry of Materials. 23: 1061-1069. DOI: 10.1021/Cm103326N  0.549
2011 Caironi M, Bird M, Fazzi D, Chen Z, Di Pietro R, Newman C, Facchetti A, Sirringhaus H. Very low degree of energetic disorder as the origin of high mobility in an n-channel polymer semiconductor Advanced Functional Materials. 21: 3371-3381. DOI: 10.1002/Adfm.201100592  0.37
2010 Caironi M, Newman C, Moore JR, Natali D, Yan H, Facchetti A, Sirringhaus H. Efficient charge injection from a high work function metal in high mobility n -type polymer field-effect transistors Applied Physics Letters. 96. DOI: 10.1063/1.3424792  0.488
2010 Cheng X, Caironi M, Noh YY, Wang J, Newman C, Yan H, Facchetti A, Sirringhaus H. Air stable cross-linked cytop ultrathin gate dielectric for high yield low-voltage top-gate organic field-effect transistors Chemistry of Materials. 22: 1559-1566. DOI: 10.1021/Cm902929B  0.484
2009 Yan H, Chen Z, Zheng Y, Newman C, Quinn JR, Dötz F, Kastler M, Facchetti A. A high-mobility electron-transporting polymer for printed transistors. Nature. 457: 679-86. PMID 19158674 DOI: 10.1038/Nature07727  0.416
2009 Ng TN, Sambandan S, Lujan R, Arias AC, Newman CR, Yan H, Facchetti A. Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions Applied Physics Letters. 94. DOI: 10.1063/1.3153510  0.522
2008 Yan H, Zheng Y, Blache R, Newman C, Lu S, Woerle J, Facchetti A. Solution processed top-gate n-channel transistors and complementary circuits on plastics operating in ambient conditions Advanced Materials. 20: 3393-3398. DOI: 10.1002/Adma.200800629  0.488
2007 Newman CR, Sirringhaus H, Blakesley JC, Speller R. Stability of polymeric thin film transistors for x-ray imaging applications Applied Physics Letters. 91. DOI: 10.1063/1.2785946  0.478
2006 Cai X, Burand MW, Newman CR, da Silva Filho DA, Pappenfus TM, Bader MM, Brédas JL, Mann KR, Frisbie CD. N- and P-channel transport behavior in thin film transistors based on tricyanovinyl-capped oligothiophenes. The Journal of Physical Chemistry. B. 110: 14590-7. PMID 16869559 DOI: 10.1021/Jp061168V  0.772
2005 Merlo JA, Newman CR, Gerlach CP, Kelley TW, Muyres DV, Fritz SE, Toney MF, Frisbie CD. p-Channel organic semiconductors based on hybrid acene-thiophene molecules for thin-film transistor applications. Journal of the American Chemical Society. 127: 3997-4009. PMID 15771537 DOI: 10.1021/Ja044078H  0.751
2005 Newman CR, Chesterfield RJ, Panzer MJ, Frisbie CD. High mobility top-gated pentacene thin-film transistors Journal of Applied Physics. 98. DOI: 10.1063/1.2076429  0.784
2005 Panzer MJ, Newman CR, Frisbie CD. Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1880434  0.746
2005 Rang Z, Nathan MI, Ruden PP, Podzorov V, Gershenson ME, Newman CR, Frisbie CD. Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1875761  0.555
2004 Jin Y, Rang Z, Nathan MI, Paul Ruden P, Newman CR, Daniel Frisbie C. Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer Applied Physics Letters. 85: 4406-4408. DOI: 10.1063/1.1814802  0.385
2004 Pesavento PV, Chesterfield RJ, Newman CR, Frisble CD. Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature Journal of Applied Physics. 96: 7312-7324. DOI: 10.1063/1.1806533  0.747
2004 Newman CR, Chesterfield RJ, Merlo JA, Frisbie CD. Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric Applied Physics Letters. 85: 422-424. DOI: 10.1063/1.1771466  0.672
2004 Chesterfield RJ, McKeen JC, Newman CR, Frisbie CD, Ewbank PC, Mann KR, Miller LL. Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors Journal of Applied Physics. 95: 6396-6405. DOI: 10.1063/1.1710729  0.821
2004 Chesterfield RJ, McKeen JC, Newman CR, Ewbank PC, Da Silva Filho DA, Brédas JL, Miller LL, Mann KR, Frisbie CD. Organic thin film transistors based on N-alkyl perylene diimides: Charge transport kinetics as a function of gate voltage and temperature Journal of Physical Chemistry B. 108: 19281-19292. DOI: 10.1021/Jp046246Y  0.82
2004 Newman CR, Frisbie CD, Da Silva Filho DA, Brédas JL, Ewbank PC, Mann KR. Introduction to organic thin film transistors and design of n-channel organic semiconductors Chemistry of Materials. 16: 4436-4451. DOI: 10.1021/Cm049391X  0.665
2004 Mohapatra S, Holmes BT, Newman CR, Prendergast CF, Frisbie CD, Ward MD. Organic thin-film transistors based on tolyl-substituted oligothiophenes Advanced Functional Materials. 14: 605-609. DOI: 10.1002/Adfm.200400034  0.69
2003 Chesterfield RJ, Newman CR, Pappenfus TM, Ewbank PC, Haukaas MH, Mann KR, Miller LL, Frisbie CD. High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene Advanced Materials. 15: 1278-1282. DOI: 10.1002/Adma.200305200  0.797
2001 Dirras GF, Coles G, Wagner AJ, Carlo S, Newman C, Hemker KJ, Sharpe WN. On the role of the underlying microstructure on the mechanical properties of microelectromechanical systems (MEMS) materials Materials Research Society Symposium - Proceedings. 657: EE5221-EE5226.  0.377
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