Year |
Citation |
Score |
2010 |
Matthews KD, Chen X, Hao D, Schaff WJ, Eastman LF. GaN photovoltaic leakage current and correlation to grain size Journal of Applied Physics. 108. DOI: 10.1063/1.3488886 |
0.457 |
|
2009 |
Chen X, Matthews KD, Hao D, Schaff WJ, Eastman LF, Walukiewicz W, Ager JW, Yu KM. MBE growth and characterization of Mg-doped III-nitrides on sapphire International Journal of High Speed Electronics and Systems. 19: 113-119. DOI: 10.1142/S0129156409006151 |
0.55 |
|
2008 |
Chen X, Matthews KD, Hao D, Schaff WJ, Eastman LF, Walukiewicz W, Ager JW, Yu KM. Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922690 |
0.467 |
|
2008 |
Matthews KD, Chen X, Hao D, Schaff WJ, Eastman LF. MBE growth and characterization of Mg-doped InGaN and InAlN Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1863-1865. DOI: 10.1002/Pssc.200778707 |
0.522 |
|
2008 |
Schaff WJ, Chen X, Hao D, Matthews K, Richards T, Eastman LF, Lu H, Cho CJH, Cha HY. Electrical properties of InGaN grown by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 245: 868-872. DOI: 10.1002/Pssb.200778710 |
0.524 |
|
2008 |
Chen X, Matthews KD, Hao D, Schaff WJ, Eastman LF. Growth, fabrication, and characterization of InGaN solar cells Physica Status Solidi (a) Applications and Materials Science. 205: 1103-1105. DOI: 10.1002/Pssa.200778695 |
0.5 |
|
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