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Mario J. Olmedo, Ph.D. - Publications

Affiliations: 
2012 Electrical Engineering University of California, Riverside, Riverside, CA, United States 
Area:
learning and memory
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15/15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Qi J, Olmedo M, Zheng JG, Liu J. Multimode resistive switching in single ZnO nanoisland system. Scientific Reports. 3: 2405. PMID 23934276 DOI: 10.1038/Srep02405  0.42
2013 Kong J, Chu S, Huang J, Olmedo M, Zhou W, Zhang L, Chen Z, Liu J. Use of distributed Bragg reflectors to enhance Fabry-Pérot lasing in vertically aligned ZnO nanowires Applied Physics a: Materials Science and Processing. 110: 23-28. DOI: 10.1007/S00339-012-7330-7  0.597
2012 Qi J, Olmedo M, Ren J, Zhan N, Zhao J, Zheng JG, Liu J. Resistive switching in single epitaxial ZnO nanoislands. Acs Nano. 6: 1051-8. PMID 22257020 DOI: 10.1021/Nn204809A  0.654
2012 Ren J, Li B, Zheng JG, Olmedo M, Zhou H, Shi Y, Liu J. Nonplanar NiSi nanocrystal floating-gate memory based on a triangular-shaped Si nanowire array for extending nanocrystal memory scaling limit Ieee Electron Device Letters. 33: 1390-1392. DOI: 10.1109/Led.2012.2206554  0.708
2012 Zuo Z, Zhou H, Olmedo MJ, Kong J, Beyermann WP, Zheng JG, Xin Y, Liu J. Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy Journal of Applied Physics. 112. DOI: 10.1063/1.4749397  0.675
2012 Kong J, Chu S, Zuo Z, Ren J, Olmedo M, Liu J. Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure Applied Physics a: Materials Science and Processing. 107: 971-975. DOI: 10.1007/S00339-012-6850-5  0.664
2012 Qi J, Ren J, Olmedo M, Zhan N, Liu J. Unipolar resistive switching in Au/Cr/Mg 0.84Zn 0.16O 2.δ/p +-Si Applied Physics a: Materials Science and Processing. 107: 891-897. DOI: 10.1007/S00339-012-6815-8  0.666
2011 Olmedo M, Wang C, Ryu K, Zhou H, Ren J, Zhan N, Zhou C, Liu J. Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes. Acs Nano. 5: 7972-7. PMID 21902187 DOI: 10.1021/Nn202377F  0.709
2011 Qi J, Zhang Q, Huang J, Ren J, Olmedo M, Liu J. Write-once-read-many-times memory based on ZnO on p-Si for long-time archival storage Ieee Electron Device Letters. 32: 1445-1447. DOI: 10.1109/Led.2011.2162219  0.591
2011 Zhan N, Olmedo M, Wang G, Liu J. Graphene based nickel nanocrystal flash memory Applied Physics Letters. 99. DOI: 10.1063/1.3640210  0.684
2011 Zhan N, Olmedo M, Wang G, Liu J. Layer-by-layer synthesis of large-area graphene films by thermal cracker enhanced gas source molecular beam epitaxy Carbon. 49: 2046-2052. DOI: 10.1016/J.Carbon.2011.01.033  0.609
2010 Olmedo M, Martinez-Morales AA, Liu G, Yengel E, Ozkan CS, Lau CN, Ozkan M, Liu J. Study of the effects of growth temperature and time on the alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes Thin Solid Films. 518: S35-S37. DOI: 10.1016/J.Tsf.2009.10.050  0.365
2009 Olmedo M, Martinez-Morales AA, Liu G, Yengel E, Ozkan CS, Lau CN, Ozkan M, Liu J. Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes Applied Physics Letters. 94. DOI: 10.1063/1.3103547  0.358
2008 Chu S, Olmedo M, Yang Z, Kong J, Liu J. Electrically pumped ultraviolet ZnO diode lasers on Si Applied Physics Letters. 93. DOI: 10.1063/1.3012579  0.667
2008 Kong J, Chu S, Olmedo M, Li L, Yang Z, Liu J. Dominant ultraviolet light emissions in packed ZnO columnar homojunction diodes Applied Physics Letters. 93. DOI: 10.1063/1.2992629  0.655
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