| Year |
Citation |
Score |
| 2023 |
Gogoi B, Gockley C, Venu S, Zhu Y, Alluri P, Malik AA, Despande MS, Phadnis R, Amonoo E, Li X, Alford TL. Ultrafast and Large-Scale Fabrication of PEDOT:PSS Nanofilms Using Electrical-Field-Assisted Direct Ink Deposition. Molecules (Basel, Switzerland). 28. PMID 37630240 DOI: 10.3390/molecules28165989 |
0.307 |
|
| 2018 |
Zhao Z, Alford T. The effect of hole transfer layers and anodes on indium-free TiO2/Ag/TiO2 electrode and ITO electrode based P3HT:PCBM organic solar cells Solar Energy Materials and Solar Cells. 176: 324-330. DOI: 10.1016/J.Solmat.2017.10.017 |
0.336 |
|
| 2017 |
Zhao Z, Hilman J, Oropeza M, Nian Q, Alford TL. Comparison of scanning laser annealing and microwave annealing for As+ implanted Si Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 011202. DOI: 10.1116/1.4972051 |
0.358 |
|
| 2017 |
Mahmud A, Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Mitkova M, Holbert KE, Goryll M, Alford TL, Taggart JL, Chen W. A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals Into Ge x S 1− x and Ge x Se 1− x Systems: A Flexible Radiation Sensor Development Perspective Ieee Transactions On Nuclear Science. 64: 2292-2299. DOI: 10.1109/Tns.2017.2684782 |
0.33 |
|
| 2017 |
Chen Y, Li L, Yin X, Yerramilli A, Shen Y, Song Y, Bian W, Li N, Zhao Z, Qu W, Theodore ND, Alford TL. Resistive Switching Characteristics of Flexible TiO2 Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method Ieee Electron Device Letters. 38: 1528-1531. DOI: 10.1109/Led.2017.2756444 |
0.398 |
|
| 2016 |
Hossain N, Das S, Alford TL. An Approach to Equivalent Circuit Modelling of Inverted Organic Solar Cells Circuits and Systems. 7: 1297-1306. DOI: 10.4236/Cs.2016.78113 |
0.598 |
|
| 2016 |
Zhao Z, Alford TL. The optimal TiO2/Ag/TiO2 electrode for organic solar cell application with high device-specific Haacke figure of merit Solar Energy Materials and Solar Cells. 157: 599-603. DOI: 10.1016/J.Solmat.2016.07.044 |
0.36 |
|
| 2015 |
Fleetham T, Choi JY, Choi HW, Alford T, Jeong DS, Lee TS, Lee WS, Lee KS, Li J, Kim I. Photocurrent enhancements of organic solar cells by altering dewetting of plasmonic Ag nanoparticles. Scientific Reports. 5: 14250. PMID 26388104 DOI: 10.1038/Srep14250 |
0.595 |
|
| 2015 |
Choi JY, Alford TL, Honsberg CB. Fabrication of periodic silicon nanopillars in a two-dimensional hexagonal array with enhanced control on structural dimension and period. Langmuir : the Acs Journal of Surfaces and Colloids. 31: 4018-23. PMID 25781034 DOI: 10.1021/Acs.Langmuir.5B00128 |
0.378 |
|
| 2015 |
Hossain N, Das S, Alford TL. Equivalent Circuit Modification for Organic Solar Cells Circuits and Systems. 6: 153-160. DOI: 10.4236/Cs.2015.66016 |
0.546 |
|
| 2015 |
Choi JY, Das S, Theodore ND, Kim I, Honsberg C, Choi HW, Alford TL. Advances in 2D/3D printing of functional nanomaterials and their applications Ecs Journal of Solid State Science and Technology. 4: P3001-P3009. DOI: 10.1149/2.0011504Jss |
0.623 |
|
| 2015 |
Elhami Khorasani A, Schroder DK, Alford TL. Carrier recombination lifetime measurement in silicon epitaxial layers using optically excited MOS capacitor technique Ieee Transactions On Electron Devices. 62: 1553-1560. DOI: 10.1109/Ted.2015.2409291 |
0.785 |
|
| 2015 |
Zhao Z, Khorasani AE, Theodore ND, Dhar A, Alford TL. Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers Journal of Applied Physics. 118. DOI: 10.1063/1.4936316 |
0.361 |
|
| 2015 |
Das S, Alford TL. Optimization of the zinc oxide electron transport layer in P3HT:PC61BM based organic solar cells by annealing and yttrium doping Rsc Advances. 5: 45586-45591. DOI: 10.1039/C5Ra05258K |
0.634 |
|
| 2015 |
Das S, Choi JY, Alford TL. P3HT:PC61BM based solar cells employing solution processed copper iodide as the hole transport layer Solar Energy Materials and Solar Cells. 133: 255-259. DOI: 10.1016/J.Solmat.2014.11.004 |
0.58 |
|
| 2015 |
Deng Y, Chen C, Qin X, Xian X, Alford TL, Choi HW, Tsow F, Forzani ES. Aging effect of a molecularly imprinted polymer on a quartz tuning fork sensor for detection of volatile organic compounds Sensors and Actuators, B: Chemical. 211: 25-32. DOI: 10.1016/J.Snb.2015.01.068 |
0.505 |
|
| 2015 |
Dhar A, Alford TL. Controlled Microwave Processing of IGZO Thin Films for Improved Optical and Electrical Properties Jom. DOI: 10.1007/S11837-015-1453-1 |
0.462 |
|
| 2015 |
Dhar A, Zhao Z, Alford TL. Effect of Different Substrates on the Wettability and Electrical Properties of Au Thin Films Deposited by Sputtering Jom. 67: 845-848. DOI: 10.1007/S11837-015-1347-2 |
0.441 |
|
| 2015 |
Dhar A, Zhao Z, Alford TL. Effect of Gold Thickness and Annealing on Optical and Electrical Properties of TiO2/Au/TiO2 Multilayers as Transparent Composite Electrode on Flexible Substrate Jom. 67: 840-844. DOI: 10.1007/S11837-015-1346-3 |
0.416 |
|
| 2015 |
Zhao Z, Dhar A, Alford TL. A Method for Efficient Transmittance Spectrum Prediction of Transparent Composite Electrodes Jom. DOI: 10.1007/S11837-015-1342-7 |
0.386 |
|
| 2014 |
Dhar A, Alford TL. Optimization of TiO2/Cu/TiO2 multilayer as transparent composite electrode (TCE) deposited on flexible substrate at room temperature Ecs Solid State Letters. 3: N33-N36. DOI: 10.1149/2.0061411Ssl |
0.407 |
|
| 2014 |
Vemuri RNP, Hasin MR, Alford T. Controlled ambient and temperature treatment of InGaZnO thin film transistors for improved bias-illumination stress reliability Journal of Vacuum Science and Technology. 32: 21101. DOI: 10.1116/1.4846216 |
0.388 |
|
| 2014 |
Dandamudi P, Mahmud A, Gonzalez-Velo Y, Kozicki MN, Barnaby HJ, Roos B, Alford TL, Ailavajhala M, Mitkova M, Holbert KE. Flexible sensors based on radiation-induced diffusion of ag in chalcogenide glass Ieee Transactions On Nuclear Science. 61: 3432-3437. DOI: 10.1109/Tns.2014.2364140 |
0.355 |
|
| 2014 |
Elhami Khorasani A, Schroder DK, Alford TL. A fast technique to screen carrier generation lifetime using DLTS on MOS capacitors Ieee Transactions On Electron Devices. 61: 3282-3288. DOI: 10.1109/Ted.2014.2337898 |
0.776 |
|
| 2014 |
Khorasani AE, Schroder DK, Alford TL. Optically excited mos-capacitor for recombination lifetime measurement Ieee Electron Device Letters. 35: 986-988. DOI: 10.1109/Led.2014.2345058 |
0.322 |
|
| 2014 |
Khorasani AE, Griswold M, Alford TL. A fast I-V screening measurement for tddb assessment of ultra-thick inter-metal dielectrics Ieee Electron Device Letters. 35: 117-119. DOI: 10.1109/Led.2013.2290538 |
0.326 |
|
| 2014 |
Das S, Alford TL. Improved efficiency of P3HT:PCBM solar cells by incorporation of silver oxide interfacial layer Journal of Applied Physics. 116. DOI: 10.1063/1.4891246 |
0.556 |
|
| 2014 |
Das S, Joslin J, Alford TL. Self-assembled monolayer modified ITO in P3HT:PC61BM organic solar cells with improved efficiency Solar Energy Materials and Solar Cells. 124: 98-102. DOI: 10.1016/J.Solmat.2014.01.048 |
0.547 |
|
| 2014 |
Kim I, Fleetham T, Choi HW, Choi JY, Lee TS, Jeong DS, Lee WS, Lee KS, Lee YK, Alford TL, Li J. Enhanced power conversion efficiency of organic solar cells by embedding Ag nanoparticles in exciton blocking layer Organic Electronics: Physics, Materials, Applications. 15: 2414-2419. DOI: 10.1016/J.Orgel.2014.06.020 |
0.543 |
|
| 2014 |
Das S, Woo Choi H, Alford TL. Effect of Ag layer thickness on the electrical transport and optical properties of ZnO/Ag/MoOx transparent composite electrodes and their use in P3HT:PC61BM-based organic solar cells Materials Letters. 133: 183-185. DOI: 10.1016/J.Matlet.2014.06.174 |
0.603 |
|
| 2014 |
Choi HW, Theodore ND, Das S, Dhar A, Alford TL. Structural properties of ZnO nanowires directly grown on a carbon film in ZnCl2aqueous solution Journal of Crystal Growth. 406: 26-30. DOI: 10.1016/J.Jcrysgro.2014.08.011 |
0.686 |
|
| 2013 |
Dhar A, Alford TL. High mobility IGZO/ITO double-layered transparent composite electrode: A thermal stability study Materials Research Society Symposium Proceedings. 1577: 54-59. DOI: 10.1557/Opl.2013.662 |
0.493 |
|
| 2013 |
Dhar A, Alford TL. Optimization of IGZO/Cu/IGZO multilayers as transparent composite electrode on flexible substrate by room-temperature sputtering and post-deposition anneals Materials Research Society Symposium Proceedings. 1577: 48-53. DOI: 10.1557/Opl.2013.661 |
0.426 |
|
| 2013 |
Dhar A, Alford TL. Effect of silver thickness and annealing on optical and electrical properties of Nb2O5/Ag/Nb2O5 multilayers as transparent composite electrode on flexible substrate Materials Research Society Symposium Proceedings. 1552: 101-106. DOI: 10.1557/Opl.2013.641 |
0.447 |
|
| 2013 |
Das S, Vemuri RNP, Alford TL. Enhanced electrical performance of Ag-Cu thin films after low temperature microwave processing Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4769964 |
0.721 |
|
| 2013 |
Elhami Khorasani A, Alford TL, Schroder DK. Modified pulsed MOS capacitor for characterization of ultraclean thin p/p+ silicon epitaxial layers Ieee Transactions On Electron Devices. 60: 2592-2597. DOI: 10.1109/Ted.2013.2267209 |
0.778 |
|
| 2013 |
Vemuri RNP, Marrs MA, Alford TL. Kinetic stress testing and the influence of long-time anneals on the behavior of IZO thin film transistors Ieee Transactions On Electron Devices. 60: 1656-1662. DOI: 10.1109/Ted.2013.2249067 |
0.657 |
|
| 2013 |
Vemuri RNP, Mathews WP, Marrs M, Alford TL. Investigation of defect generation and annihilation in IGZO TFTs during practical stress conditions: Illumination and electrical bias Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/4/045101 |
0.614 |
|
| 2013 |
Wang C, Nosaka T, Yost B, Zimmerman B, Sutton ED, Kincaid E, Keberle K, Iqbal QA, Mendez R, Markowitz S, Liu P, Alford TL, Chan CK, Chan KS, O’Connell MJ. Printed carbon nanotubes on polymer films for active origami Materials Research Letters. 1: 13-18. DOI: 10.1080/21663831.2012.727105 |
0.328 |
|
| 2013 |
Zhao Z, Theodore ND, Vemuri RNP, Lu W, Lau SS, Lanz A, Alford TL. Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon Journal of Applied Physics. 114. DOI: 10.1063/1.4858404 |
0.609 |
|
| 2013 |
Zhao Z, David Theodore N, Vemuri RNP, Das S, Lu W, Lau SS, Alford TL. Effective dopant activation via low temperature microwave annealing of ion implanted silicon Applied Physics Letters. 103. DOI: 10.1063/1.4829153 |
0.698 |
|
| 2013 |
Das S, Alford TL. Microwave assisted growth of copper germanide thin films at very low temperatures Applied Physics Letters. 103. DOI: 10.1063/1.4820253 |
0.64 |
|
| 2013 |
Das S, Alford TL. Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing Journal of Applied Physics. 113. DOI: 10.1063/1.4812584 |
0.646 |
|
| 2013 |
Dhar A, Alford TL. High quality transparent TiO2/Ag/TiO2 composite electrode films deposited on flexible substrate at room temperature by sputtering Apl Materials. 1. DOI: 10.1063/1.4808438 |
0.446 |
|
| 2013 |
Indluru A, Holbert KE, Alford TL. Gamma radiation effects on indium-zinc oxide thin-film transistors Thin Solid Films. 539: 342-344. DOI: 10.1016/J.Tsf.2013.04.148 |
0.82 |
|
| 2013 |
Das S, Vemuri RNP, Alford TL. Enhanced conductivity of Y-doped ZnO thin films by incorporation of multiple walled carbon nanotubes Thin Solid Films. 527: 92-95. DOI: 10.1016/J.Tsf.2012.12.003 |
0.725 |
|
| 2013 |
Choi HW, Theodore ND, Alford TL. ZnO-Ag-MoO3 transparent composite electrode for ITO-free, PEDOT: PSS-free bulk-heterojunction organic solar cells Solar Energy Materials and Solar Cells. 117: 446-450. DOI: 10.1016/J.Solmat.2013.07.009 |
0.586 |
|
| 2013 |
Woo Choi H, Lee KS, David Theodore N, Alford TL. Improved performance of ZnO nanostructured bulk heterojunction organic solar cells with nanowire-density modified by yttrium chloride introduction into solution Solar Energy Materials and Solar Cells. 117: 273-278. DOI: 10.1016/J.Solmat.2013.06.036 |
0.495 |
|
| 2013 |
Yu J, Xia J, Kim I, French BL, Haverinen HM, Alford TL, Jabbour GE. Light-induced enhancement of quantum dot photovoltaic devices with nitrogen doped titanium oxide capping layers Organic Electronics: Physics, Materials, Applications. 14: 3339-3347. DOI: 10.1016/J.Orgel.2013.09.033 |
0.35 |
|
| 2013 |
Roos B, Das S, Alford TL. Thermal stability of copper on Te-Ti thin films Materials Letters. 113: 100-102. DOI: 10.1016/J.Matlet.2013.09.083 |
0.623 |
|
| 2013 |
Alford TL, Gadre MJ, Vemuri RNP. Improved mobility and transmittance of room-temperature-deposited amorphous indium gallium zinc oxide (a-IGZO) films with low-temperature postfabrication anneals Jom. 65: 519-524. DOI: 10.1007/S11837-013-0569-4 |
0.808 |
|
| 2013 |
Das S, Alford TL. Reflectance spectroscopy of functional Ag-Cu thin films: Correlation of reflectivity with Cu content Jom. 65: 538-541. DOI: 10.1007/S11837-012-0545-4 |
0.616 |
|
| 2013 |
Das S, Alford TL. Effect of low-temperature microwave processing and copper content on the properties of Ag-Cu thin film binary alloys Jom. 65: 534-537. DOI: 10.1007/S11837-012-0543-6 |
0.6 |
|
| 2012 |
Mathews WP, Vemuri RNP, Alford TL. Influence of Extended Bias Stress on the Electrical Parameters of Mixed Oxide Thin Film Transistors Circuits and Systems. 2012: 295-299. DOI: 10.4236/Cs.2012.34041 |
0.351 |
|
| 2012 |
Alford TL, Indluru A, Vemuri RNP. Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs Materials Research Society Symposium Proceedings. 1443: 21-26. DOI: 10.1557/Opl.2012.1439 |
0.778 |
|
| 2012 |
Alford TL, Indluru A, Vemuri RNP, Holbert KE. The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation Ecs Transactions. 50: 191-196. DOI: 10.1149/05008.0191ecst |
0.804 |
|
| 2012 |
Alford TL, Vemuri RNP, Mathews WP. Mixed oxide thin film transistors under combinatory optical irradiation and electrical bias Ecs Transactions. 50: 179-184. DOI: 10.1149/05008.0179ecst |
0.58 |
|
| 2012 |
Vemuri RNP, Alford TL. Influence of thermal stress and kinetic bias stress on the electrical performance of mixed oxide thin film transistors Ecs Transactions. 50: 161-166. DOI: 10.1149/05008.0161ecst |
0.602 |
|
| 2012 |
Dhar A, Alford TL. Optimization of Nb2O5/Ag/Nb2O5 multilayers as transparent composite electrode on flexible substrate with high figure of merit Journal of Applied Physics. 112. DOI: 10.1063/1.4767662 |
0.458 |
|
| 2012 |
Woo Choi H, Lee KS, Alford TL. Optimization of antireflective zinc oxide nanorod arrays on seedless substrate for bulk-heterojunction organic solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4757997 |
0.504 |
|
| 2012 |
Lee KS, Lim JW, Kim HK, Alford TL, Jabbour GE. Transparent conductive electrodes of mixed TiO 2-x-indium tin oxide for organic photovoltaics Applied Physics Letters. 100. DOI: 10.1063/1.4707381 |
0.492 |
|
| 2012 |
Doran C, Chen W, Alford TL, Lau SS. A study of single-crystal silicon diodes integrated on flexible substrates using conductive adhesives Applied Physics Letters. 100. DOI: 10.1063/1.3684970 |
0.347 |
|
| 2012 |
Alford TL, Gadre MJ, Vemuri RNP, Theodore ND. Susceptor-assisted microwave annealing for activation of arsenic dopants in silicon Thin Solid Films. 520: 4314-4320. DOI: 10.1016/J.Tsf.2012.02.086 |
0.783 |
|
| 2012 |
Das S, Alford TL. Microwave assisted low temperature encapsulation of Ag films by Cu reactions using Ag-Cu alloy structures Materials Letters. 89: 163-165. DOI: 10.1016/J.Matlet.2012.08.075 |
0.601 |
|
| 2011 |
Alford TL, Sivaramakrishnan K. Gold nanolayers embedded in zinc oxide for large area flexible photovoltaics Materials Research Society Symposium Proceedings. 1322: 13-19. DOI: 10.1557/Opl.2011.1295 |
0.666 |
|
| 2011 |
Sivaramakrishnan K, Bakken N, Alford TL. ZnO-based transparent anodes for organic light-emitting devices Materials Research Society Symposium Proceedings. 1359: 43-48. DOI: 10.1557/Opl.2011.1033 |
0.554 |
|
| 2011 |
Chen W, Doran C, Govea D, Alford TL, Lau SS. Stress-induced transfer of ultrathin silicon layers onto flexible substrates Electrochemical and Solid-State Letters. 14: H171-H173. DOI: 10.1149/1.3548508 |
0.388 |
|
| 2011 |
Vemuri RNP, Gadre MJ, Theodore ND, Alford TL. Dopant activation in arsenic-implanted Si by susceptor-assisted low-temperature microwave anneal Ieee Electron Device Letters. 32: 1122-1124. DOI: 10.1109/Led.2011.2157453 |
0.785 |
|
| 2011 |
Lee EH, Indluru A, Allee DR, Clark LT, Holbert KE, Alford TL. Effects of gamma irradiation and electrical stress on a-Si:H thin-film transistors for flexible electronics and displays Ieee/Osa Journal of Display Technology. 7: 325-329. DOI: 10.1109/Jdt.2011.2113314 |
0.803 |
|
| 2011 |
Indluru A, Venugopal SM, Allee DR, Alford TL. Effect of anneal time on the enhanced performance of a-Si:H TFTs for future display technology Ieee/Osa Journal of Display Technology. 7: 306-310. DOI: 10.1109/Jdt.2010.2063695 |
0.812 |
|
| 2011 |
Vemuri RNP, Gadre MJ, Theodore ND, Chen W, Lau SS, Alford TL. Susceptor assisted microwave annealing for recrystallization and dopant activation of arsenic-implanted silicon Journal of Applied Physics. 110: 34907. DOI: 10.1063/1.3622287 |
0.403 |
|
| 2011 |
Gadre MJ, Alford TL. Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals Applied Physics Letters. 99. DOI: 10.1063/1.3619196 |
0.771 |
|
| 2011 |
Chen W, Alford TL, Kuech TF, Lau SS. High electron mobility transistors on plastic flexible substrates Applied Physics Letters. 98. DOI: 10.1063/1.3593006 |
0.392 |
|
| 2011 |
Mudenda S, Streib KL, Adams D, Mayer JW, Nemutudi R, Alford TL. Effect of substrate patterning on hydroxyapatite sol-gel thin film growth Thin Solid Films. 519: 5603-5608. DOI: 10.1016/J.Tsf.2011.02.067 |
0.579 |
|
| 2011 |
Bowen A, Li J, Lewis J, Sivaramakrishnan K, Alford TL, Iyer S. The properties of radio frequency sputtered transparent and conducting ZnO:F films on polyethylene naphthalate substrate Thin Solid Films. 519: 1809-1816. DOI: 10.1016/J.Tsf.2010.10.019 |
0.666 |
|
| 2011 |
Lee JK, Jung HS, Wang Y, Theodore ND, Alford TL, Nastasi M. Ion-irradiation enhanced epitaxial growth of sol-gel TiO2 films Applied Physics a: Materials Science and Processing. 103: 179-184. DOI: 10.1007/S00339-010-5985-5 |
0.412 |
|
| 2010 |
Elhalawaty S, Sivaramakrishnan K, Theodore ND, Alford TL. The role of sputter pressure in influencing electrical and optical properties of ITO on glass Materials Research Society Symposium Proceedings. 1256: 101-112. DOI: 10.1557/Proc-1256-N11-53 |
0.667 |
|
| 2010 |
Indluru A, Venugopal SM, Allee DR, Alford TL. Threshold voltage shift variation of a-Si:H TFTs with anneal time Materials Research Society Symposium Proceedings. 1245: 403-408. DOI: 10.1557/Proc-1245-A19-02 |
0.82 |
|
| 2010 |
Alford TL, Sivaramakrishnan K, Indium A, Ahmad I, Hubbard R, Theodore ND. Low temperature dopant activation using variable frequency microwave annealing Materials Research Society Symposium Proceedings. 1245: 331-336. DOI: 10.1557/Proc-1245-A16-09 |
0.615 |
|
| 2010 |
Indluru A, Alford TL. Enhanced performance and thermal stability of a-Si:H TFTs Ecs Transactions. 33: 57-64. DOI: 10.1149/1.3501989 |
0.813 |
|
| 2010 |
Indluru A, Alford TL. Improvement in electrical stress stability of indium zinc oxide TFTs after low temperature postanneals Electrochemical and Solid-State Letters. 13: H464-H466. DOI: 10.1149/1.3487930 |
0.813 |
|
| 2010 |
Indluru A, Alford TL. Improved thermal stability of indium zinc oxide TFTs by low temperature post annealing Ecs Transactions. 33: 337-344. DOI: 10.1149/1.3481256 |
0.802 |
|
| 2010 |
Indluru A, Alford TL. High-temperature stability and enhanced performance of a-Si:H TFT on flexible substrate due to improved interface quality Ieee Transactions On Electron Devices. 57: 3006-3011. DOI: 10.1109/Ted.2010.2067733 |
0.813 |
|
| 2010 |
Dey A, Indluru A, Venugopal SM, Allee DR, Alford TL. Effect of mechanical and electromechanical stress on a-ZIO TFTs Ieee Electron Device Letters. 31: 1416-1418. DOI: 10.1109/Led.2010.2080350 |
0.782 |
|
| 2010 |
Sivaramakrishnan K, Alford TL. Conduction and transmission analysis in gold nanolayers embedded in zinc oxide for flexible electronics Applied Physics Letters. 96. DOI: 10.1063/1.3435467 |
0.597 |
|
| 2010 |
Elhalawaty S, Sivaramakrishnan K, Theodore ND, Alford TL. The effect of sputtering pressure on electrical, optical and structure properties of indium tin oxide on glass Thin Solid Films. 518: 3326-3331. DOI: 10.1016/J.Tsf.2009.10.014 |
0.656 |
|
| 2010 |
Thermadam SP, Bhagat SK, Alford TL, Sakaguchi Y, Kozicki MN, Mitkova M. Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices Thin Solid Films. 518: 3293-3298. DOI: 10.1016/J.Tsf.2009.09.021 |
0.39 |
|
| 2010 |
Mitkova M, Sakaguchi Y, Tenne D, Bhagat SK, Alford TL. Structural details of Ge-rich and silver-doped chalcogenide glasses for nanoionic nonvolatile memory Physica Status Solidi (a) Applications and Materials Science. 207: 621-626. DOI: 10.1002/Pssa.200982902 |
0.374 |
|
| 2010 |
Elhalawaty S, Sivaramakrishnan K, Theodore ND, Alford TL. The role of sputter pressure in influencing electrical and optical properties of ITO on glass Materials Research Society Symposium Proceedings. 1256: 101-112. |
0.63 |
|
| 2010 |
Sivaramakrishnan K, Iyer S, Theodore ND, Alford TL. Effect of thermal processing on silver contacts for zinc oxide and indium tin oxide Advanced Metallization Conference (Amc). 281-290. |
0.647 |
|
| 2010 |
Sivaramakrishnan K, Theodore ND, Moulder JF, Alford TL. Metallic conduction in ZnO/Cu/ZnO thin films Advanced Metallization Conference (Amc). 269-279. |
0.624 |
|
| 2009 |
Bhagat S, Theodore ND, Chenna S, Alford T. Effect of copper addition on electromigration behavior of silver metallization Applied Physics Express. 2. DOI: 10.1143/Apex.2.096502 |
0.331 |
|
| 2009 |
Chen W, Zhang A, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Feasibility study of ion-cut InP photoconductor devices on glass substrates Applied Physics Express. 2. DOI: 10.1143/Apex.2.022201 |
0.32 |
|
| 2009 |
Indluru A, Misra E, Alford TL. Current-density dependence on Ag eFUSEs with TiN underlayers Ieee Electron Device Letters. 30: 1134-1136. DOI: 10.1109/Led.2009.2031257 |
0.784 |
|
| 2009 |
Sivaramakrishnan K, Ngo AT, Iyer S, Alford TL. Erratum: "effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide" [J. Appl. Phys. 105, 063525 (2009)] Journal of Applied Physics. 106: 89901. DOI: 10.1063/1.3262629 |
0.636 |
|
| 2009 |
Alford TL, Thompson DC, Mayer JW, Theodore ND. Dopant activation in ion implanted silicon by microwave annealing Journal of Applied Physics. 106. DOI: 10.1063/1.3260245 |
0.531 |
|
| 2009 |
Sivaramakrishnan K, Theodore ND, Moulder JF, Alford TL. The role of copper in ZnO/Cu/ZnO thin films for flexible electronics Journal of Applied Physics. 106. DOI: 10.1063/1.3213385 |
0.666 |
|
| 2009 |
Indluru A, Alford TL. Effect of Ag thickness on electrical transport and optical properties of indium tin oxide-Ag-indium tin oxide multilayers Journal of Applied Physics. 105. DOI: 10.1063/1.3153977 |
0.806 |
|
| 2009 |
Sivaramakrishnan K, Ngo AT, Iyer S, Alford TL. Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide Journal of Applied Physics. 105. DOI: 10.1063/1.3100043 |
0.656 |
|
| 2009 |
Sivaramakrishnan K, Alford TL. Metallic conductivity and the role of copper in ZnO/Cu/ZnO thin films for flexible electronics Applied Physics Letters. 94. DOI: 10.1063/1.3077184 |
0.627 |
|
| 2009 |
Alford TL, Misra E, Bhagat SK, Mayer JW. Influence of Joule heating during electromigration evaluation of silver lines Thin Solid Films. 517: 1833-1836. DOI: 10.1016/J.Tsf.2008.08.196 |
0.499 |
|
| 2009 |
Tucker JR, Abbott B, Sivaramakrishnan K, Alford TL. Residual stress reduction for air plasma sprayed Al-Si abradable coating Tms Annual Meeting. 3: 249-255. |
0.528 |
|
| 2008 |
Han H, Lewis J, Alford T. Effect of Inactivated Dopants Clusters and Processing Parameters on Electrical Properties of Indium Tin Oxide on Plastic Substrates Mrs Proceedings. 1074: 174-179. DOI: 10.1557/Proc-1074-I05-16 |
0.305 |
|
| 2008 |
Han H, Theodore ND, Alford T. Tailoring electrical conductivity and mechanism of carrier transport in zinc oxide with embedded Ag layer Mrs Proceedings. 1074: 167-173. DOI: 10.1557/Proc-1074-I05-15 |
0.416 |
|
| 2008 |
Han H, Alford TL. Texture and surface morphology evolution of Ag(Cu) layers on indium tin oxide thin films Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/15/155306 |
0.433 |
|
| 2008 |
Bhagat SK, Alford TL. Texture formation in Ag thin films: Effect of W-Ti diffusion barriers Journal of Applied Physics. 104. DOI: 10.1063/1.3028233 |
0.454 |
|
| 2008 |
Chen W, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Integration of thin layers of single-crystalline InP with flexible substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937409 |
0.378 |
|
| 2008 |
Chen P, Jing Y, Lau SS, Xu D, Mawst L, Alford TL, Paulson C, Kuech TF. High crystalline-quality III-V layer transfer onto Si substrate Applied Physics Letters. 92. DOI: 10.1063/1.2890494 |
0.389 |
|
| 2008 |
Thompson DC, Alford TL, Mayer JW. Spectroscopic study of microwave-enhanced silicon exfoliation Applied Physics Letters. 92. DOI: 10.1063/1.2842420 |
0.536 |
|
| 2008 |
Han H, Theodore ND, Alford TL. Improved conductivity and mechanism of carrier transport in zinc oxide with embedded silver layer Journal of Applied Physics. 103. DOI: 10.1063/1.2829788 |
0.418 |
|
| 2008 |
Bhagat SK, Theodore ND, Alford TL. Thermal stability of tungsten-titanium diffusion barriers for silver metallization Thin Solid Films. 516: 7451-7457. DOI: 10.1016/J.Tsf.2008.03.021 |
0.492 |
|
| 2008 |
Bhagat SK, Han H, Zoo Y, Lewis J, Grego S, Lee K, Iyer S, Alford TL. Effects of deposition parameters on the electrical and mechanical properties of indium tin oxide films on polyethylene napthalate substrates deposited by radio frequency magnetron sputtering Thin Solid Films. 516: 4064-4069. DOI: 10.1016/J.Tsf.2007.12.146 |
0.424 |
|
| 2008 |
Alford TL, Shetty PK, Theodore ND, Tile N, Adams D, Mayer JW. Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates Thin Solid Films. 516: 3940-3947. DOI: 10.1016/J.Tsf.2007.07.204 |
0.604 |
|
| 2008 |
Alford TL, Tang T, Thompson DC, Bhagat S, Mayer JW. Influence of microwave annealing on direct bonded silicon wafers Thin Solid Films. 516: 2158-2161. DOI: 10.1016/J.Tsf.2007.06.118 |
0.514 |
|
| 2007 |
Bhagat S, Zoo Y, Han H, Lewis J, Grego S, Lee K, Iyer S, Alford TL. Mechanical properties of indium tin oxide on polyethylene napthalate substrate Materials Research Society Symposium Proceedings. 1012: 401-406. DOI: 10.1557/Proc-1012-Y12-21 |
0.426 |
|
| 2007 |
Han H, Alford TL. Influence of metal impurity defects on the electrical and optical properties of ITO films on the PEN substrates Materials Research Society Symposium Proceedings. 1012: 373-378. DOI: 10.1557/Proc-1012-Y12-10 |
0.416 |
|
| 2007 |
Thompson DC, Alford TL, Mayer JW, Hochbauer T, Lee JK, Nastasi M, David Theodore N. Microwave activation of exfoliation in ion-cut silicon layer transfer Materials Research Society Symposium Proceedings. 994: 137-142. DOI: 10.1557/Proc-0994-F11-07 |
0.499 |
|
| 2007 |
Zoo Y, Theodore ND, Alford TL. Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction Materials Research Society Symposium Proceedings. 994: 191-196. DOI: 10.1557/Proc-0994-F11-03 |
0.313 |
|
| 2007 |
Han H, Zoo Y, Mayer JW, Alford TL. Potential of Ag interconnect and contact metallization for various applications via Cu additions Materials Research Society Symposium Proceedings. 990: 191-196. DOI: 10.1557/Proc-0990-B08-24 |
0.556 |
|
| 2007 |
Bhagat S, Theodore ND, Alford TL. A study of tungsten-titanium barriers in silver metallization Materials Research Society Symposium Proceedings. 990: 153-158. DOI: 10.1557/Proc-0990-B08-10 |
0.475 |
|
| 2007 |
Zoo Y, Alford TL. Texture evolution and stress in silver thin films on different substrates using X-ray diffraction Materials Research Society Symposium Proceedings. 990: 147-152. DOI: 10.1557/Proc-0990-B08-07 |
0.413 |
|
| 2007 |
Zoo Y, Han H, Alford TL. Enhanced [111] preferred orientation of Ag thin film on amorphous SiO 2 by Cu addition Materials Research Society Symposium Proceedings. 990: 141-146. DOI: 10.1557/Proc-0990-B08-06 |
0.405 |
|
| 2007 |
Thompson DC, Decker J, Alford TL, Mayer JW, Theodore ND. Microwave activation of dopants & solid phase epitaxy in silicon Materials Research Society Symposium Proceedings. 989: 145-150. DOI: 10.1557/Proc-0989-A06-18 |
0.489 |
|
| 2007 |
Zoo Y, Theodore ND, Alford TL. Strain characterization of strained silicon on insulator including the effects of rotational misalignment Journal of Applied Physics. 102. DOI: 10.1063/1.2801001 |
0.309 |
|
| 2007 |
Han H, Zoo Y, Bhagat SK, Lewis JS, Alford TL. Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate Journal of Applied Physics. 102. DOI: 10.1063/1.2783952 |
0.479 |
|
| 2007 |
Han H, Zoo Y, Mayer JW, Alford TL. Improved surface morphology and texture of Ag films on indium tin oxide via Cu additions Journal of Applied Physics. 102. DOI: 10.1063/1.2761822 |
0.516 |
|
| 2007 |
Thompson DC, Alford TL, Mayer JW, Höchbauer T, Lee JK, Nastasi M, Lau SS, Theodore ND, Chu PK. Microwave enhanced ion-cut silicon layer transfer Journal of Applied Physics. 101. DOI: 10.1063/1.2737387 |
0.492 |
|
| 2007 |
Zoo Y, Alford TL. Comparison of preferred orientation and stress in silver thin films on different substrates using x-ray diffraction Journal of Applied Physics. 101. DOI: 10.1063/1.2401654 |
0.441 |
|
| 2007 |
Gopalan C, Kozicki MN, Bhagat S, Puthen Thermadam SC, Alford TL, Mitkova M. Structure of copper-doped tungsten oxide films for solid-state memory Journal of Non-Crystalline Solids. 353: 1844-1848. DOI: 10.1016/J.Jnoncrysol.2007.02.054 |
0.383 |
|
| 2007 |
Balakrishnan M, Kozicki MN, Poweleit CD, Bhagat S, Alford TL, Mitkova M. Crystallization effects in annealed thin GeS2 films photodiffused with Ag Journal of Non-Crystalline Solids. 353: 1454-1459. DOI: 10.1016/J.Jnoncrysol.2005.09.051 |
0.418 |
|
| 2007 |
Alford TL, Feldman LC, Mayer JW. Fundamentals of nanoscale film analysis Fundamentals of Nanoscale Film Analysis. 1-338. DOI: 10.1007/978-0-387-29261-8 |
0.445 |
|
| 2006 |
Han H, Mayer JW, Alford TL. Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air Journal of Applied Physics. 100. DOI: 10.1063/1.2357647 |
0.581 |
|
| 2006 |
Han H, Mayer JW, Alford TL. Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate Journal of Applied Physics. 99. DOI: 10.1063/1.2204815 |
0.596 |
|
| 2006 |
Shao L, Lee JK, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2204330 |
0.488 |
|
| 2006 |
Di Z, Chu PK, Zhu M, Fu RKY, Luo S, Shao L, Nastasi M, Chen P, Alford TL, Mayer JW, Zhang M, Liu W, Song Z, Lin C. Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects Applied Physics Letters. 88. DOI: 10.1063/1.2192981 |
0.585 |
|
| 2006 |
Shao L, Lin Y, Swadener JG, Lee JK, Jia QX, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. H-induced platelet and crack formation in hydrogenated epitaxial Si/Si 0.98B 0.02/Si structures Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2163992 |
0.463 |
|
| 2006 |
Bhagat S, Han H, Alford TL. Tungsten-titanium diffusion barriers for silver metallization Thin Solid Films. 515: 1998-2002. DOI: 10.1016/J.Tsf.2006.03.049 |
0.484 |
|
| 2006 |
Zoo Y, Adams D, Mayer JW, Alford TL. Investigation of coefficient of thermal expansion of silver thin film on different substrates using X-ray diffraction Thin Solid Films. 513: 170-174. DOI: 10.1016/J.Tsf.2006.02.005 |
0.592 |
|
| 2006 |
Streib KL, Alford TL, Mayer JW. Experimental verification of theoretical cross sections for FIB-PIXE Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 92-94. DOI: 10.1016/J.Nimb.2006.03.087 |
0.463 |
|
| 2006 |
Misra E, Theodore ND, Mayer JW, Alford TL. Failure mechanisms of pure silver, pure aluminum and silver-aluminum alloy under high current stress Microelectronics Reliability. 46: 2096-2103. DOI: 10.1016/J.Microrel.2006.01.011 |
0.53 |
|
| 2006 |
Shetty PK, Theodore ND, Mayer JW, Alford TL. Kinetics of amorphous silicon dissolution into aluminum layers Materials Letters. 60: 490-493. DOI: 10.1016/J.Matlet.2005.09.022 |
0.611 |
|
| 2006 |
Adams D, Malgas GF, Smith RD, Massia SP, Alford TL, Mayer JW. Microwave annealing for preparation of crystalline hydroxyapatite thin films Journal of Materials Science. 41: 7150-7158. DOI: 10.1007/S10853-006-0925-7 |
0.607 |
|
| 2005 |
Adams D, Smith RD, Malgas GF, Massia SP, Alford TL, Mayer JW. The influence of geometrically configured sol-gel derived hydroxyapatite substrates on osteoblast response Key Engineering Materials. 284: 569-572. DOI: 10.4028/Www.Scientific.Net/Kem.284-286.569 |
0.455 |
|
| 2005 |
Shao L, Lin Y, Swadener JG, Lee JK, Jia QX, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2146211 |
0.539 |
|
| 2005 |
Thompson DC, Alford TL, Mayer JW, Hochbauer T, Nastasi M, Lau SS, Theodore ND, Henttinen K, Suni L, Chu PK. Microwave-cut silicon layer transfer Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2135395 |
0.57 |
|
| 2005 |
Misra E, Alford TL. Effect of alloying and cladding on the failure of silver metallization under high temperature and current stressing Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117633 |
0.349 |
|
| 2005 |
Han H, Adams D, Mayer JW, Alford TL. Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate Journal of Applied Physics. 98. DOI: 10.1063/1.2106013 |
0.6 |
|
| 2005 |
Chen P, Lau SS, Chu PK, Henttinen K, Suni T, Suni I, Theodore ND, Alford TL, Mayer JW, Shao L, Nastasi M. Silicon layer transfer using plasma hydrogenation Applied Physics Letters. 87. DOI: 10.1063/1.2048811 |
0.533 |
|
| 2005 |
Shao L, Lin Y, Lee JK, Jia QX, Wang Y, Nastasi M, Thompson PE, Theodore ND, Chu PK, Alford TL, Mayer JW, Chen P, Lau SS. Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation Applied Physics Letters. 87. DOI: 10.1063/1.2032602 |
0.476 |
|
| 2005 |
Chen P, Chu PK, Höchbauer T, Lee JK, Nastasi M, Buca D, Mantl S, Loo R, Caymax M, Alford T, Mayer JW, Theodore ND, Cai M, Schmidt B, Lau SS. Investigation of plasma hydrogenation and trapping mechanism for layer transfer Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852087 |
0.53 |
|
| 2005 |
Misra E, Marenco C, Theodore ND, Alford TL. Failure mechanisms of silver and aluminum on titanium nitride under high current stress Thin Solid Films. 474: 235-244. DOI: 10.1016/J.Tsf.2004.02.103 |
0.341 |
|
| 2005 |
Misra E, Islam MM, Hasan M, Kim HC, Alford TL. Percolative approach for failure time prediction of thin film interconnects under high current stress Microelectronics Reliability. 45: 391-395. DOI: 10.1016/J.Microrel.2004.09.009 |
0.314 |
|
| 2005 |
Shetty PK, Theodore ND, Ren J, Menendez J, Kim HC, Misra E, Mayer JW, Alford TL. Formation and characterization of silicon films on flexible polymer substrates Materials Letters. 59: 872-875. DOI: 10.1016/J.Matlet.2004.11.034 |
0.627 |
|
| 2004 |
Theodore ND, Kim HC, Gadre KS, Mayer JW, Alford TL. Morphology of Ti37Al63 thin-films deposited by magnetron sputtering Materials Research Society Symposium Proceedings. 812: 215-220. DOI: 10.1557/Proc-812-F3.25 |
0.788 |
|
| 2004 |
Kim HC, David Theodore N, Mayer JW, Alford TL. Thermal stability and electrical properties of Ag(Al) metallization Materials Research Society Symposium Proceedings. 812: 209-214. DOI: 10.1557/Proc-812-F3.24 |
0.612 |
|
| 2004 |
Mitan MM, Kim HC, Alford TL, Malgas GF, Adams D. Ag metallization on suicides with nitride barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2804-2810. DOI: 10.1116/1.1815312 |
0.353 |
|
| 2004 |
Adams D, Malgas GF, David Theodore N, Gregory R, Kim HC, Misra E, Alford TL, Mayer JW. Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2345-2352. DOI: 10.1116/1.1787521 |
0.601 |
|
| 2004 |
Islam MM, Misra E, Kim HC, Hasan M, Alford TL. A Nondestructive Approach to Predict the Failure Time of Thin-Film Interconnects under High-Stress Current Ieee Electron Device Letters. 25: 19-21. DOI: 10.1109/Led.2003.821594 |
0.329 |
|
| 2004 |
Chen P, Chu PK, Höchbauer T, Nastasi M, Buca D, Mantl S, Theodore ND, Alford TL, Mayer JW, Loo R, Caymax M, Cai M, Lau SS. Plasma hydrogenation of strain-relaxed SiGeSi heterostructure for layer transfer Applied Physics Letters. 85: 4944-4946. DOI: 10.1063/1.1824171 |
0.517 |
|
| 2004 |
Lee JK, Nastasi M, Theodore ND, Smalley A, Alford TL, Mayer JW, Cai M, Lau SS. Effects of hydrogen implantation temperature on ion-cut of silicon Journal of Applied Physics. 96: 280-288. DOI: 10.1063/1.1755851 |
0.556 |
|
| 2004 |
Kim HC, Theodore ND, Alford TL. Comparison of texture evolution in Ag and Ag(Ai) alloy thin films on amorphous SiO 2 Journal of Applied Physics. 95: 5180-5188. DOI: 10.1063/1.1682685 |
0.311 |
|
| 2004 |
Kim HC, Alford TL. Investigation on diffusion barrier properties of reactive sputter deposited TiAlxNyOz thin films for Cu metallization Thin Solid Films. 449: 6-11. DOI: 10.1016/S0040-6090(03)01384-1 |
0.472 |
|
| 2004 |
Malgas GF, Adams D, Alford TL, Mayer JW. A study of the factors influencing the kinetics in Ag/Al bilayer systems Thin Solid Films. 467: 267-274. DOI: 10.1016/J.Tsf.2004.04.025 |
0.51 |
|
| 2004 |
Kim HC, Theodore ND, Gadre KS, Mayer JW, Alford TL. Investigation of thermal stability, phase formation, electrical, and microstructural properties of sputter-deposited titanium aluminide thin films Thin Solid Films. 460: 17-24. DOI: 10.1016/J.Tsf.2004.01.048 |
0.795 |
|
| 2004 |
Misra E, Wang Y, Theodore ND, Alford TL. Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization Thin Solid Films. 457: 338-345. DOI: 10.1016/J.Tsf.2003.10.162 |
0.454 |
|
| 2004 |
Mitkova M, Kozicki MN, Kim HC, Alford TL. Thermal and photodiffusion of Ag in S-rich Ge-S amorphous films Thin Solid Films. 449: 248-253. DOI: 10.1016/J.Tsf.2003.10.077 |
0.416 |
|
| 2004 |
Kim HC, Theodore ND, Gadre KS, Alford TL. Microstructure and stability of sputtered titanium aluminides on SiO 2 Scripta Materialia. 50: 517-521. DOI: 10.1016/J.Scriptamat.2003.10.022 |
0.758 |
|
| 2004 |
Thompson DC, Kim HC, Alford TL, Mayer JW. Ion beam analysis applied to new and innovative technologies Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 968-972. DOI: 10.1016/J.Nimb.2004.01.198 |
0.54 |
|
| 2004 |
Alford TL, Mitan MM, Govindasamy R, Mayer JW. Ion beam analysis of silver thin films on cobalt silicides Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 897-901. DOI: 10.1016/J.Nimb.2004.01.184 |
0.625 |
|
| 2004 |
Mitkova M, Kozicki MN, Kim HC, Alford TL. Local structure resulting from photo and thermal diffusion of Ag in Ge-Se thin films Journal of Non-Crystalline Solids. 338: 552-556. DOI: 10.1016/J.Jnoncrysol.2004.03.040 |
0.398 |
|
| 2003 |
Thompson DC, Kim HC, Alford TL, Mayer JW. Formation of silicides in a cavity applicator microwave system Applied Physics Letters. 83: 3918-3920. DOI: 10.1063/1.1625430 |
0.504 |
|
| 2003 |
Kim HC, Alford TL. Improvement of the thermal stability of silver metallization Journal of Applied Physics. 94: 5393-5395. DOI: 10.1063/1.1609646 |
0.435 |
|
| 2003 |
Alford TL, Gadre KS, Kim HC, Deevi SC. Abnormal electrical resistivity in γ-TiAl thin films deposited by magnetron sputtering Applied Physics Letters. 83: 455-457. DOI: 10.1063/1.1593826 |
0.737 |
|
| 2003 |
Gadre KS, Alford TL. Contact angle measurements for adhesion energy evaluation of silver and copper films on parylene-n and SiO2 substrates Journal of Applied Physics. 93: 919-923. DOI: 10.1063/1.1530362 |
0.71 |
|
| 2003 |
Adams D, Julies BA, Mayer JW, Alford TL. The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems Applied Surface Science. 216: 163-168. DOI: 10.1016/S0169-4332(03)00513-0 |
0.582 |
|
| 2003 |
Mitan MM, Alford TL, Mayer JW. Stability of silver thin films on cobalt and nickel silicides Thin Solid Films. 434: 258-263. DOI: 10.1016/S0040-6090(03)00451-6 |
0.619 |
|
| 2003 |
Alford TL, Chen L, Gadre KS. Stability of silver thin films on various underlying layers at elevated temperatures Thin Solid Films. 429: 248-254. DOI: 10.1016/S0040-6090(03)00034-8 |
0.75 |
|
| 2002 |
Alford TL, Mitan M, Mayer JW. Nanometer-scale silicide structures formed by focused ion-beam implantation Proceedings of the International Conference On Ion Implantation Technology. 22: 677-681. DOI: 10.1109/IIT.2002.1258096 |
0.507 |
|
| 2002 |
Kim HC, Alford TL, Allee DR. Thickness dependence on the thermal stability of silver thin films Applied Physics Letters. 81: 4287-4289. DOI: 10.1063/1.1525070 |
0.337 |
|
| 2002 |
Torrison L, Tolle J, Smith DJ, Poweleit C, Menendez J, Mitan MM, Alford TL, Kouvetakis J. Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition Journal of Applied Physics. 92: 7475-7480. DOI: 10.1063/1.1525046 |
0.442 |
|
| 2002 |
Chen L, Zeng Y, Nyugen P, Alford TL. Silver diffusion and defect formation in Si (1 1 1) substrate at elevated temperatures Materials Chemistry and Physics. 76: 224-227. DOI: 10.1016/S0254-0584(01)00529-6 |
0.375 |
|
| 2002 |
Milan MM, Pivin DP, Alford TL, Mayer JW. Patterning of nanometer-scale suicide structures on silicon by 'direct writing focus ion-beam implantation' Thin Solid Films. 411: 219-224. DOI: 10.1016/S0040-6090(02)00282-1 |
0.558 |
|
| 2001 |
Lopatin CM, Pizziconi VB, Alford TL. Crystallization kinetics of sol-gel derived hydroxyapatite thin films. Journal of Materials Science. Materials in Medicine. 12: 767-73. PMID 15348222 DOI: 10.1023/A:1017908515442 |
0.415 |
|
| 2001 |
Mitan MM, Pivin DP, Alford TL, Mayer JW. Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2525-2528. DOI: 10.1116/1.1408953 |
0.494 |
|
| 2001 |
Alford TL, Zou YL, Gadre KS, David Theodore N, Chen W. Characterization of thin photosensitive polyimide films for future metallization schemes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1253-1258. DOI: 10.1116/1.1379797 |
0.696 |
|
| 2001 |
Alford TL, Zou YL, Gadre KS, King C, Chen W, Theodore ND. Integration and electrical characterization of photosensitive polyimide Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 774-779. DOI: 10.1116/1.1364703 |
0.727 |
|
| 2001 |
Nguyen P, Zeng Y, Alford T. Novel technique to pattern silver using CF4 and CF4/O2 glow discharges Journal of Vacuum Science & Technology B. 19: 158-165. DOI: 10.1116/1.1333080 |
0.331 |
|
| 2001 |
Sieradzki K, Bailey K, Alford TL. Agglomeration and percolation conductivity Applied Physics Letters. 79: 3401-3403. DOI: 10.1063/1.1419043 |
0.42 |
|
| 2001 |
Gadre KS, Alford TL, Mayer JW. Use of TiN(O)Ti as an effective intermediate stress buffer and diffusion barrier for Cu/parylene-n interconnects Applied Physics Letters. 79: 3260-3262. DOI: 10.1063/1.1416156 |
0.755 |
|
| 2001 |
Malgas GF, Adams D, Nguyen P, Wang Y, Alford TL, Mayer JW. Investigation of the effects of different annealing ambients on Ag/Al bilayers: Electrical properties and morphology Journal of Applied Physics. 90: 5591-5596. DOI: 10.1063/1.1415051 |
0.575 |
|
| 2001 |
Mitan MM, Pivin DP, Alford TL, Mayer JW. Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer Applied Physics Letters. 78: 2727-2729. DOI: 10.1063/1.1369608 |
0.56 |
|
| 2001 |
Lopatin CM, Pizziconi VB, Alford TL. Crystallization kinetics of sol-gel derived hydroxyapatite thin films Journal of Materials Science: Materials in Medicine. 12: 767-773. DOI: 10.1023/A:1017908515442 |
0.317 |
|
| 2001 |
Alford TL, Zeng Y, Nguyen P, Chen L, Mayer JW. Self-encapsulation effects on the electromigration resistance of silver lines Microelectronic Engineering. 55: 389-395. DOI: 10.1016/S0167-9317(00)00472-X |
0.541 |
|
| 2001 |
Alford TL, Nguyen P, Zeng Y, Mayer JW. Advanced silver-based metallization patterning for ULSI applications Microelectronic Engineering. 55: 383-388. DOI: 10.1016/S0167-9317(00)00471-8 |
0.539 |
|
| 2001 |
Gadre KS, Alford TL. Crack formation in TiN films deposited on Pa-n due to large thermal mismatch Thin Solid Films. 394: 125-130. DOI: 10.1016/S0040-6090(01)01135-X |
0.747 |
|
| 2000 |
Wang Y, Alford T, Mayer JW. Kinetics model for the self-encapsulation of Ag/Al bilayers Mrs Proceedings. 612. DOI: 10.1557/Proc-612-D9.7.1 |
0.435 |
|
| 2000 |
Wang Y, Alford T. Formation of Al x O y N z Barriers for Advanced Silver Metallization Mrs Proceedings. 612. DOI: 10.1557/Proc-612-D9.6.1 |
0.419 |
|
| 2000 |
Zeng Y, Chen L, Alford TL. The integration of low-k dielectric material hydrogen silsesquioxane (HSQ) with nitride thin films as barriers Mrs Proceedings. 612. DOI: 10.1557/Proc-612-D9.11.1 |
0.353 |
|
| 2000 |
Beaudoin M, Grassi E, Johnson SR, Ramaswamy K, Tsakalis K, Alford TL, Zhang YH. Real-time composition control of InAlAs grown on InP using spectroscopic ellipsometry Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1435-1438. DOI: 10.1116/1.591398 |
0.334 |
|
| 2000 |
Zeng Y, Russell SW, McKerrow AJ, Chen L, Alford T. Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane Journal of Vacuum Science & Technology B. 18: 221-230. DOI: 10.1116/1.591176 |
0.444 |
|
| 2000 |
Gadre KS, Alford TL. Thermal stability and adhesion improvement of Ag deposited on Pa-n by oxygen plasma treatment Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2814-2819. DOI: 10.1116/1.1327300 |
0.691 |
|
| 2000 |
Zeng Y, Chen L, Alford T. Sheet resistance modeling of the Ti/SiO2 system upon high temperature annealing Applied Physics Letters. 76: 64-66. DOI: 10.1063/1.125657 |
0.364 |
|
| 2000 |
Zeng Y, Chen L, Zou YL, Nguyen PA, Hansen JD, Alford T. Processing and encapsulation of silver patterns by using reactive ion etch and ammonia anneal Materials Chemistry and Physics. 66: 77-82. DOI: 10.1016/S0254-0584(00)00264-9 |
0.464 |
|
| 2000 |
Zeng Y, Chen L, Zou YL, Nyugen PA, Hansen JD, Alford T. Enhancement of Ag electromigration resistance by a novel encapsulation process Materials Letters. 45: 157-161. DOI: 10.1016/S0167-577X(00)00097-5 |
0.357 |
|
| 2000 |
Olowolafe JO, Rau I, Unruh KM, Swann CP, Jawad ZS, Alford T. Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films Thin Solid Films. 365: 19-21. DOI: 10.1016/S0040-6090(99)01113-X |
0.452 |
|
| 2000 |
Zeng Y, Russell SW, McKerrow AJ, Chen P, Alford T. Thin film interaction between low-k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer Thin Solid Films. 360: 283-292. DOI: 10.1016/S0040-6090(99)00936-0 |
0.436 |
|
| 1999 |
Nguyen P, Zeng Y, Alford TL. Reactive ion etch of patterned and blanket silver thin films in Cl2/O2 and O2 glow discharges Journal of Vacuum Science & Technology B. 17: 2204-2209. DOI: 10.1116/1.590894 |
0.398 |
|
| 1999 |
Wang Y, Alford T, Mayer JW. Kinetics of Ag/Al bilayer self-encapsulation Journal of Applied Physics. 86: 5407-5412. DOI: 10.1063/1.371538 |
0.521 |
|
| 1999 |
Wang Y, Alford T. Formation of aluminum oxynitride diffusion barriers for Ag metallization Applied Physics Letters. 74: 52-54. DOI: 10.1063/1.123130 |
0.457 |
|
| 1999 |
Olowolafe JO, Rau I, Unruh KM, Swann CP, Jawad Z, Alford T. The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films Journal of Electronic Materials. 28: 1399-1402. DOI: 10.1007/S11664-999-0129-4 |
0.447 |
|
| 1998 |
Bair AE, Atzmon Z, Alford TL, Smith DJ. Wet oxidation of amorphous Si0.67Ge0.25C0.08 grown on (100) Si substrates Journal of Applied Physics. 83: 2835-2841. DOI: 10.1063/1.367044 |
0.471 |
|
| 1998 |
Zeng Y, Alford TL, Zou YL, Amali A, Ullrich BM, Deng F, Lau SS. Texture and microstructural evolution of thin silver films in Ag/Ti bilayers Journal of Applied Physics. 83: 779-785. DOI: 10.1063/1.366758 |
0.445 |
|
| 1998 |
Lopatin CM, Alford T, Pizziconi V, Kuan M, Laursen T. Ion-beam densification of hydroxyapatite thin films Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 145: 522-531. DOI: 10.1016/S0168-583X(98)80557-0 |
0.45 |
|
| 1998 |
Lopatin CM, Alford T, Pizziconi V, Laursen T. A new technique for characterization of pore structures in materials : application to the study of hydroxyapatite thin films Materials Letters. 37: 211-214. DOI: 10.1016/S0167-577X(98)00093-7 |
0.367 |
|
| 1998 |
Adams D, Julies BA, Mayer JW, Alford T. Corrosion of titanium-nitride encapsulated silver films exposed to a H2S ambient Thin Solid Films. 332: 235-239. DOI: 10.1016/S0040-6090(98)01094-3 |
0.608 |
|
| 1998 |
Lopatin C, Pizziconi V, Alford T, Laursen T. Hydroxyapatite powders and thin films prepared by a sol-gel technique Thin Solid Films. 326: 227-232. DOI: 10.1016/S0040-6090(98)00531-8 |
0.412 |
|
| 1997 |
Zou YL, Alford T, Mayer JW. Physical Characterization of Photosensitive Polyimide Mrs Proceedings. 476: 255-260. DOI: 10.1557/Proc-476-255 |
0.428 |
|
| 1997 |
Alford T, Zeng Y, Zou YL, Deng F, Lau SS, Laursen T, Ullrich BM. Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction Mrs Proceedings. 472: 293-298. DOI: 10.1557/Proc-472-293 |
0.347 |
|
| 1997 |
Zeng Y, Zou YL, Alford T, Deng F, Lau SS, Laursen T, Ullrich BM. Influence of underlayer and encapsulation process on texture in polycrystalline silver thin films Mrs Proceedings. 472: 203-208. DOI: 10.1557/Proc-472-203 |
0.429 |
|
| 1997 |
Amali AI, Mayer JW, Zeng Y, Zou YL, Alford T, Deng F, Lau SS. Tem Observations of AG-TI Bilayers After Thermal Aging Treatment in a Reducing Ambient Mrs Proceedings. 472: 197-202. DOI: 10.1557/Proc-472-197 |
0.613 |
|
| 1997 |
Zou YL, Alford TL, Zeng Y, Deng F, Lau SS, Laursen T, Amali AI, Ullrich BM. Formation of titanium nitride by annealing Ag/Ti structures in ammonia ambient Journal of Applied Physics. 82: 3321-3327. DOI: 10.1063/1.365641 |
0.5 |
|
| 1997 |
Zeng Y, Zou YL, Alford T, Deng F, Lau SS, Laursen T, Ullrich BM. Texture and stress of Ag films in Ag/Ti, Ag/Cr bilayers, and self-encapsulated structures Journal of Applied Physics. 81: 7773-7777. DOI: 10.1063/1.365386 |
0.425 |
|
| 1997 |
Lorentzen JD, Loechelt GH, Meléndez-Lira M, Menéndez J, Sego S, Culbertson RJ, Windl W, Sankey OF, Bair AE, Alford TL. Photoluminescence in Si1−x−yGexCy alloys Applied Physics Letters. 70: 2353-2355. DOI: 10.1063/1.118871 |
0.358 |
|
| 1997 |
Jaquez EJ, Bair AE, Alford T. Cu enhanced oxidation of SiGe and SiGeC Applied Physics Letters. 70: 874-876. DOI: 10.1063/1.118302 |
0.334 |
|
| 1997 |
Zou YL, Alford TL, Zeng Y, Laursen T, Ullrich BM. A comparative study of refractory metal nitridation in an NH3 ambient Thin Solid Films. 308: 410-414. DOI: 10.1016/S0040-6090(97)00595-6 |
0.46 |
|
| 1997 |
Adams D, Laursen T, Alford T, Mayer JW. Titanium-nitride self-encapsulation of Cu and Ag films on silicon dioxide Thin Solid Films. 308: 448-454. DOI: 10.1016/S0040-6090(97)00502-6 |
0.589 |
|
| 1997 |
Zeng Y, Zou YL, Alford T. Texture in evaporated Ag thin films and its evolution during encapsulation process Thin Solid Films. 307: 89-95. DOI: 10.1016/S0040-6090(97)00317-9 |
0.402 |
|
| 1996 |
Russell SW, Alford TL, Luptak KA, Pizziconi VB, Mayer JW. The application of ion beam analysis to calcium phosphate-based biomaterials. Journal of Biomedical Materials Research. 30: 165-74. PMID 9019480 DOI: 10.1002/(Sici)1097-4636(199602)30:2<165::Aid-Jbm5>3.0.Co;2-P |
0.538 |
|
| 1996 |
Bair AE, Alford T, Atzmon Z, Marcus SD, Doller DC, Morton R, Lau SS, Mayer JW. Cobalt and Titanium Metallization of SiGeC for Shallow Contacts Mrs Proceedings. 427: 529-533. DOI: 10.1557/Proc-427-529 |
0.581 |
|
| 1996 |
Zou YL, Alford TL, Adams D, Laursen T, Tu K, Morton R, Lau SS. Encapsulation of Silver Via Nitridation of Ag/Ti Bilayer Structures Mrs Proceedings. 427. DOI: 10.1557/Proc-427-355 |
0.48 |
|
| 1996 |
Adams D, Alford T, Laursen T, Deng F, Morton R, Lau SS. The Formation of Tin-Encapsulated Silver Films by Nitridation of Silver-refractory metal alloys in NH 3 Mrs Proceedings. 427: 337-342. DOI: 10.1557/Proc-427-337 |
0.443 |
|
| 1996 |
Russell SW, Luptak KA, Suchicital CTA, Alford TL, Pizziconi VB. Chemical and Structural Evolution of Sol‐Gel‐Derived Hydroxyapatite Thin Films under Rapid Thermal Processing Journal of the American Ceramic Society. 79: 837-842. DOI: 10.1111/J.1151-2916.1996.Tb08514.X |
0.422 |
|
| 1996 |
Ramanath G, Xiao HZ, Lai SL, Allen LH, Alford TL. Au‐mediated low‐temperature solid phase epitaxial growth of a SixGe1−xalloy on Si(001) Journal of Applied Physics. 79: 3094-3102. DOI: 10.1063/1.361252 |
0.34 |
|
| 1996 |
Alford T, Jaquez EJ, Theodore ND, Russell SW, Diale M, Adams D, Anders S. Influence of interfacial copper on the room temperature oxidation of silicon Journal of Applied Physics. 79: 2074-2078. DOI: 10.1063/1.361064 |
0.404 |
|
| 1996 |
Alford T, Adams D, Laursen T, Ullrich BM. Encapsulation of Ag films on SiO2 by Ti reactions using Ag–Ti alloy/bilayer structures and an NH3 ambient Applied Physics Letters. 68: 3251-3253. DOI: 10.1063/1.116564 |
0.447 |
|
| 1996 |
Bair AE, Alford T, Sego S, Atzmon Z, Culbertson R. An X-ray diffraction study of the strain and structure of SiGeC/(100)Si alloys Materials Chemistry and Physics. 46: 283-287. DOI: 10.1016/S0254-0584(96)01812-3 |
0.367 |
|
| 1996 |
Alford T, Adams D, Theodore N, Laursen T, Kim M. Influence of interfacial copper during the dealloying and nitridation of Cu-Ti films Materials Chemistry and Physics. 46: 248-251. DOI: 10.1016/S0254-0584(96)01806-8 |
0.424 |
|
| 1996 |
Laursen T, Adams D, Alford TL, Tu K, Deng F, Morton R, Lau SS. Encapsulation of silver by nitridation of AgTi alloy/bilayer structures Thin Solid Films. 411-416. DOI: 10.1016/S0040-6090(96)08964-X |
0.451 |
|
| 1996 |
Adams D, Alford TL, Rafalski SA, Rack MJ, Russell SW, Kim MJ, Mayer JW. Formation of passivation and adhesion layers for Cu via nitridation of Cu-Ti in an ammonia ambient Materials Chemistry and Physics. 43: 145-152. DOI: 10.1016/0254-0584(95)01610-7 |
0.547 |
|
| 1996 |
Bair AE, Atzmon Z, Russell SW, Barbour JC, Alford T, Mayer JW. Comparison of elastic resonance and elastic recoil detection in the quantification of carbon in SiGeC Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 118: 274-277. DOI: 10.1016/0168-583X(95)01468-3 |
0.514 |
|
| 1996 |
Barbero CJ, Deng C, Sigmon TW, Russell SW, Alford T. The fabrication of nickel and chromium silicide using an XeCl excimer laser Journal of Crystal Growth. 165: 57-60. DOI: 10.1016/0022-0248(95)00427-0 |
0.361 |
|
| 1995 |
Atzmon Z, Bair AE, Alford TL, Chandrasekhar D, Smith DJ, Mayer JW. Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition Mrs Proceedings. 399: 117-122. DOI: 10.1557/Proc-399-117 |
0.529 |
|
| 1995 |
Adams D, Alford T, Theodore ND, Laursen T, Russell SW, Kim MJ. Influence of Interfacial Copper on the Ti-SiO 2 Reaction During Nitridation of Cu-Ti Films Mrs Proceedings. 398: 631-636. DOI: 10.1557/Proc-398-631 |
0.405 |
|
| 1995 |
Bair AE, Atzmon Z, Alford TL, Chandrasekhar D, Smith DJ. Wet Oxidation of Si 1-x-y Ge x C y Layers on (100) Si Mrs Proceedings. 398: 625-630. DOI: 10.1557/Proc-398-625 |
0.335 |
|
| 1995 |
Jaquez EJ, Alford T, Theodore ND, Adams D, Li J, Russell SW, Anders S. Low temperature oxidation of silicon after copper ion implantation Mrs Proceedings. 398: 189-193. DOI: 10.1557/Proc-398-189 |
0.429 |
|
| 1995 |
Alford TL. Formation and kinetics of ion‐induced yttrium silicide layers Journal of Applied Physics. 77: 1010-1014. DOI: 10.1063/1.358958 |
0.374 |
|
| 1995 |
Atzmon Z, Bair AE, Alford TL, Chandrasekhar D, Smith DJ, Mayer JW. Wet oxidation of amorphous and crystalline Si1-x-yGexCy alloys grown on (100)Si substrates Applied Physics Letters. 66: 2244-2246. DOI: 10.1063/1.113180 |
0.554 |
|
| 1995 |
Russell S, Li J, Alford T, Oakey P, Shatas S. Rapid thermal nitridation of thin chromium films Applied Surface Science. 90: 455-463. DOI: 10.1016/0169-4332(95)00161-1 |
0.412 |
|
| 1995 |
Bair AE, Atzmon Z, Russell SW, Alford TL, Mayer JW, Barbour JC. Quantification of carbon in Si1-x-yGexCy with uniform profiles Nuclear Inst. and Methods in Physics Research, B. 103: 339-346. DOI: 10.1016/0168-583X(95)00614-1 |
0.486 |
|
| 1995 |
Adams D, Alford T, Theodore ND, Russell SW. Segregation of Cu in Cu (Ti) alloys during nitridation in NH3 Thin Solid Films. 270: 346-350. DOI: 10.1016/0040-6090(95)06712-4 |
0.363 |
|
| 1995 |
Alford TL, Bair AE, Atzmon Z, Stout LM, Balster SG, Schroder DK, Roedel RJ. Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications Thin Solid Films. 270: 632-636. DOI: 10.1016/0040-6090(95)06701-9 |
0.457 |
|
| 1995 |
Alford TL, Jian L, Mayer JW, Shi-Qing W. Copper-based metallization and interconnects for ultra-large-scale integration applications Thin Solid Films. 262. DOI: 10.1016/0040-6090(95)06624-1 |
0.447 |
|
| 1995 |
Russell SW, Rafalski SA, Spreitzer RL, Li J, Moinpour M, Moghadam F, Alford T. Enhanced adhesion of copper to dielectrics via titanium and chromium additions and sacrificial reactions Thin Solid Films. 262: 154-167. DOI: 10.1016/0040-6090(94)05812-1 |
0.383 |
|
| 1995 |
Adams D, Alford TL, Theodore ND, Russell SW, Spreitzera RL, Mayer JW. Passivation of Cu via refractory metal nitridation in an ammonia ambient Thin Solid Films. 262: 199-208. DOI: 10.1016/0040-6090(94)05805-9 |
0.549 |
|
| 1994 |
Levine TE, Nastasi M, Alford TL, Suchicital C, Russell S, Luptak K, Pizziconi V, Mayer JW. Ion Beam Mixing of Titanium Overlayers with Hydroxyapatite Substrates Mrs Proceedings. 356. DOI: 10.1557/Proc-356-791 |
0.471 |
|
| 1994 |
Alford T, Russell SW, Pizziconi V, Mayer JW, Levine TE, Nastasi M, Cotell CM, Auyeung RCY. Ion Mixing of Pulsed Laser Deposited Hydroxylapatite (HA) Mrs Proceedings. 354: 15-20. DOI: 10.1557/Proc-354-15 |
0.51 |
|
| 1994 |
Spreitzer RL, Rafalski SA, Adams D, Russell SW, Atzmon Z, Li J, Alford T, Mayer JW. Interfacial Reactions of Copper/Refractory Alloy and Bilayer Films on Si0 2 Mrs Proceedings. 337: 631-636. DOI: 10.1557/Proc-337-631 |
0.598 |
|
| 1994 |
Rafalski SA, Spreitzer RL, Russell SW, Alford T, Li J, Moinpour M, Moghadam F, Mayer JW. Enhanced Adhesion of Copper Films to SiO 2 , PSG and BPSG by Refractory Metal Additions Mrs Proceedings. 337: 613-618. DOI: 10.1557/Proc-337-613 |
0.556 |
|
| 1994 |
Adams D, Spreitzer RL, Russell SW, Theodore ND, Alford T, Mayer JW. Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization Mrs Proceedings. 337: 231-236. DOI: 10.1557/Proc-337-231 |
0.463 |
|
| 1994 |
Alford T, Theodore ND. Backscattering and electron microscopy study of mega‐electron volt gold implantation into silicon Journal of Applied Physics. 76: 7265-7271. DOI: 10.1063/1.358008 |
0.316 |
|
| 1992 |
Theodore ND, Alford TL, Carter CB, Mayer JW, Cheung NW. TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon Applied Physics a Solids and Surfaces. 54: 124-131. DOI: 10.1007/BF00323898 |
0.404 |
|
| 1990 |
Fleischer EL, Hertl W, Alford TL, Børgesen P, Mayer JW. The effect of ion induced damage on the hardness, wear, and friction of zirconia Journal of Materials Research. 5: 385-391. DOI: 10.1557/Jmr.1990.0385 |
0.419 |
|
| 1990 |
Alford TL, Bo/rgesen P, Mayer JW, Lilienfeld DA. Low‐temperature ion mixing of yttrium and silicon Journal of Applied Physics. 67: 1288-1292. DOI: 10.1063/1.345678 |
0.415 |
|
| 1990 |
Alford TL, Theodore ND, Fleischer EL, Mayer JW, Carter CB, Bo/rgesen P, Ullrich BM, Cheung NW, Wong H. Observation of multiple precipitate layers in MeV Au++‐implanted silicon Applied Physics Letters. 56: 1796-1798. DOI: 10.1063/1.103103 |
0.442 |
|
| 1989 |
Fleischer EL, Herd W, Alford TL, Børgesen P, Revesz P, Mayer JW. The Effect of Ion Induced Damage on the Mechanical Properties of Zirconia Mrs Proceedings. 157. DOI: 10.1557/PROC-157-537 |
0.406 |
|
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