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Willem Cornelis Sinke - Publications

Affiliations: 
2013- University of Amsterdam, Amsterdam, Netherlands 
Area:
Photovoltaic Energy Conversion
Website:
http://www.uva.nl/en/news-events/news/uva-news/content/professor-appointments/2013/08/wim-sinke-professor-of-photovoltaic-energy-conversion.html
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53 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Polman A, Knight M, Garnett EC, Ehrler B, Sinke WC. Photovoltaic materials: Present efficiencies and future challenges. Science (New York, N.Y.). 352: aad4424. PMID 27081076 DOI: 10.1126/Science.Aad4424  0.557
2011 Reich NH, Alsema EA, Van Sark WGJHM, Turkenburg WC, Sinke WC. Greenhouse gas emissions associated with photovoltaic electricity from crystalline silicon modules under various energy supply options Progress in Photovoltaics: Research and Applications. 19: 603-613. DOI: 10.1002/Pip.1066  0.523
2010 Reich NH, van Sark WGJHM, Turkenburg WC, Sinke WC. Using CAD software to simulate PV energy yield - The case of product integrated photovoltaic operated under indoor solar irradiation Solar Energy. 84: 1526-1537. DOI: 10.1016/J.Solener.2010.05.015  0.501
2009 Reich NH, van Sark WGJHM, Alsema EA, Lof RW, Schropp REI, Sinke WC, Turkenburg WC. Crystalline silicon cell performance at low light intensities Solar Energy Materials and Solar Cells. 93: 1471-1481. DOI: 10.1016/J.Solmat.2009.03.018  0.535
1998 Acco S, Williamson DL, Van Sark WGJHM, Sinke WC, Van Der Weg WF, Polman A, Roorda S. Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 58: 12853-12864.  0.346
1997 Schmidt J, Schuurmans FM, Sinke WC, Glunz SW, Aberle AG. Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition Applied Physics Letters. 71: 252-254.  0.323
1996 Acco S, Williamson DL, Stolk PA, Saris FW, van den Boogaard MJ, Sinke WC, van der Weg WF, Roorda S, Zalm PC. Hydrogen solubility and network stability in amorphous silicon. Physical Review. B, Condensed Matter. 53: 4415-4427. PMID 9983995 DOI: 10.1103/PhysRevB.53.4415  0.76
1996 Leguijt C, Lölgen P, Eikelboom JA, Weeber AW, Schuurmans FM, Sinke WC, Alkemade PFA, Sarro PM, Marée CHM, Verhoef LA. Low temperature surface passivation for silicon solar cells Solar Energy Materials and Solar Cells. 40: 297-345. DOI: 10.1016/0927-0248(95)00155-7  0.391
1996 Schuurmans FM, Schonecker A, Eikelboom JA, Sinke WC. Crystal-orientation dependence of surface recombination velocity for silicon nitride passivated silicon wafers Conference Record of the Ieee Photovoltaic Specialists Conference. 485-488.  0.34
1996 van Roosmalen JAM, Tool CJJ, Huiberts RC, Beenen RJG, Huijsmans JPP, Sinke WC. Ceramic substrates for thin-film crystalline silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 657-660.  0.356
1994 Lölgen P, Sinke WC, Leguijt C, Weeber AW, Alkemade PFA, Verhoef LA. Boron doping of silicon using coalloying with aluminium Applied Physics Letters. 65: 2792-2794. DOI: 10.1063/1.112992  0.322
1994 Custer JS, Thompson MO, Jacobson DC, Poate JM, Roorda S, Sinke WC, Spaepen F. Density of amorphous Si Applied Physics Letters. 64: 437-439. DOI: 10.1063/1.111121  0.777
1994 Leguijt C, Lölgen P, Eikelboom JA, Amesz PH, Steeman RA, Sinke WC, Sarro PM, Verhoef LA, Michiels PP, Chen ZH, Rohatgi A. Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride Solar Energy Materials and Solar Cells. 34: 177-181. DOI: 10.1016/0927-0248(94)90038-8  0.36
1993 Stolk PA, Polman A, Sinke WC. Experimental test of kinetic theories for heterogeneous freezing in silicon. Physical Review. B, Condensed Matter. 47: 5-13. PMID 10004410 DOI: 10.1103/PhysRevB.47.5  0.603
1993 Carolissen RJ, Knoesen DK, Sinke WC, Pretorius R. Formation of buried Sb dopant profiles in silicon by pulsed laser epitaxy Journal of Materials Research. 8: 841-846.  0.393
1992 Stolk PA, Calcagnile L, Roorda S, Sinke WC, Berntsen AJM, Van Der Weg WF. Defects in amorphous silicon probed by subpicosecond photocarrier dynamics Applied Physics Letters. 60: 1688-1690. DOI: 10.1063/1.107212  0.781
1991 Roorda S, Sinke WC, Poate JM, Jacobson DC, Dierker S, Dennis BS, Eaglesham DJ, Spaepen F, Fuoss P. Structural relaxation and defect annihilation in pure amorphous silicon. Physical Review. B, Condensed Matter. 44: 3702-3725. PMID 9999999 DOI: 10.1103/Physrevb.44.3702  0.783
1991 van Maaren AJP, Zagwijn PM, Sinke WC. Silicon consumption in excimer-laser-assisted chemical vapour deposition of tungsten Materials Science and Engineering B. 8: 181-188. DOI: 10.1016/0921-5107(91)90036-U  0.321
1991 Poate JM, Coffa S, Jacobson DC, Polman A, Roth JA, Olson GL, Roorda S, Sinke W, Custer JS, Thompson MO, Spaepen F, Donovan E. Amorphous Si - the role of MeV implantation in elucidating defect and thermodynamic properties Nuclear Inst. and Methods in Physics Research, B. 55: 533-543. DOI: 10.1016/0168-583X(91)96226-B  0.772
1991 Roorda S, Custer JS, Sinke WC, Poate JM, Jacobson DC, Polman A, Spaepen F. Structural relaxation in amorphous silicon and the role of network defects Nuclear Inst. and Methods in Physics Research, B. 59: 344-352. DOI: 10.1016/0168-583X(91)95237-8  0.776
1991 Polman A, Roorda S, Stolk PA, Sinke WC. Triggering explosive crystallization of amorphous silicon Journal of Crystal Growth. 108: 114-120. DOI: 10.1016/0022-0248(91)90359-D  0.782
1990 Verhoef LA, Stroom JC, Bisschop FJ, Liefting JR, Sinke WC. 3D-resolved determination of minority-carrier lifetime in planar silicon solar cells by photocurrent decay Journal of Applied Physics. 68: 6485-6494. DOI: 10.1063/1.346847  0.307
1990 Polman A, Stolk PA, Mous DJW, Sinke WC, Bulle-Lieuwma CWT, Vandenhoudt DEW. Pulsed-laser crystallization of amorphous silicon layers buried in a crystalline matrix Journal of Applied Physics. 67: 4024-4035. DOI: 10.1063/1.346076  0.448
1990 Verhoef LA, Michiels PP, Sinke WC, Denisse CMM, Hendriks M, Van Zolingen RJC. Combined impurity gettering and defect passivation in polycrystalline silicon solar cells Applied Physics Letters. 57: 2704-2706. DOI: 10.1063/1.103805  0.301
1990 Polman A, Jacobson DC, Coffa S, Poate JM, Roorda S, Sinke WC. Defect states of amorphous Si probed by the diffusion and solubility of Cu Applied Physics Letters. 57: 1230-1232. DOI: 10.1063/1.103493  0.761
1990 Roorda S, Poate JM, Jacobson DC, Dennis BS, Dierker S, Sinke WC. Raman study of de-relaxation and defects in amorphous silicon induced by MeV ion beams Applied Physics Letters. 56: 2097-2099. DOI: 10.1063/1.102984  0.773
1990 Verhoef LA, Michiels PP, Roorda S, Sinke WC, Van Zolingen RJC. Gettering in polycrystalline silicon solar cells Materials Science and Engineering B. 7: 49-62. DOI: 10.1016/0921-5107(90)90009-Z  0.732
1990 Roorda S, Kammann D, Sinke WC, van de Walle GFA, van Gorkum AA. Influence of layer thickness on nucleation in amorphous silicon thin films Materials Letters. 9: 259-262. DOI: 10.1016/0167-577X(90)90056-R  0.74
1990 Roorda S, Poate JM, Jacobson DC, Eaglesham DJ, Dennis BS, Dierker S, Sinke WC, Spaepen F. Point defect populations in amorphous and crystalline silicon Solid State Communications. 75: 197-200. DOI: 10.1016/0038-1098(90)90268-G  0.772
1990 Sinke WC, Roorda S. Aspects of silicon crystallization Journal of Crystal Growth. 99: 222-228. DOI: 10.1016/0022-0248(90)90517-O  0.776
1989 Roorda S, Doorn S, Sinke WC, Scholte PM, van Loenen E. Calorimetric evidence for structural relaxation in amorphous silicon. Physical Review Letters. 62: 1880-1883. PMID 10039794 DOI: 10.1103/PhysRevLett.62.1880  0.744
1989 Polman A, Mous DJW, Stolk PA, Sinke WC, Bulle-Lieuwma CWT, Vandenhoudt DEW. Epitaxial explosive crystallization of amorphous silicon Applied Physics Letters. 55: 1097-1099. DOI: 10.1063/1.101668  0.451
1989 Roorda S, Sinke WC. Rapid nucleation in pulsed laser heated amorphous Si Applied Surface Science. 36: 588-596. DOI: 10.1016/0169-4332(89)90954-9  0.762
1989 Sinke WC, Warabisako T, Miyao M, Tokuyama T, Roorda S. The structure of nanocrystalline silicon formed by laser-induced explosive crystallization Applied Surface Science. 36: 460-470. DOI: 10.1016/0169-4332(89)90941-0  0.75
1989 Sinke WC, Polman A, Roorda S, Stolk PA. Explosive crystallization of amorphous silicon: triggering and propagation Applied Surface Science. 43: 128-135. DOI: 10.1016/0169-4332(89)90201-8  0.739
1989 Polman A, Sinke WC, Uttormark MJ, Thompson MO. Pulsed-laser induced transient phase transformations at the Si-H2O interface Journal of Materials Research. 4: 843-856.  0.355
1988 Polman A, Sinke W, Saris FW, Uttormark MJ, Thompson MO. Quench rate enhancement in pulsed laser melting of Si by processing under water Applied Physics Letters. 52: 535-537. DOI: 10.1063/1.99408  0.698
1988 Miyao M, Moniwa M, Kusukawa K, Sinke W. Low-temperature SOI (Si-on-insulator) formation by lateral solid-phase epitaxy Journal of Applied Physics. 64: 3018-3023. DOI: 10.1063/1.341565  0.326
1988 Sinke W, Warabisako T, Miyao M, Tokuyama T, Roorda S, Saris FW. Transient structural relaxation of amorphous silicon Journal of Non-Crystalline Solids. 99: 308-323. DOI: 10.1016/0022-3093(88)90439-5  0.792
1988 Sinke WC, Roorda S, Saris FW. Variable strain energy in amorphous silicon Journal of Materials Research. 3: 1201-1207.  0.651
1987 Sinke W, Polman A, Saris FW. A comparison between excimer laser and thermal annealing for ion-implanted polycrystalline silicon solar cells Solar Cells. 20: 51-57. DOI: 10.1016/0379-6787(87)90020-2  0.721
1986 Sinke W, Saris FW, Barbour JC, Mayer JW. SOLID-PHASE EPITAXIAL REGROWTH OF FINE-GRAIN POLYCRYSTALLINE SILICON. Journal of Materials Research. 1: 155-161. DOI: 10.1557/JMR.1986.0155  0.681
1986 Bruines JJP, Van Hal RPM, Boots HMJ, Sinke W, Saris FW. Direct observation of resolidification from the surface upon pulsed-laser melting of amorphous silicon Applied Physics Letters. 48: 1252-1254. DOI: 10.1063/1.96995  0.695
1986 Miyao M, Polman A, Sinke W, Saris FW, Van Kemp R. Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon Applied Physics Letters. 48: 1132-1134. DOI: 10.1063/1.96447  0.683
1986 Polman A, Van Sark WGJHM, Sinke W, Saris FW. A new method for the evaluation of solar cell parameters Solar Cells. 17: 241-251. DOI: 10.1016/0379-6787(86)90015-3  0.598
1986 Miyao M, Polman A, van Kemp R, Sinke W, Westendorp JEM, van der Veen JF, Saris FW. ELECTRON AND ION BEAM-STIMULATED SOLID PHASE REGROWTH OF PHOSPHORUS-IMPLANTED SILICON. Conference On Solid State Devices and Materials. 557-560.  0.727
1986 Sinke W, Polman A, Saris FW. COMPARISON BETWEEN EXCIMER LASER AND THERMAL ANNEALING FOR ION-IMPLANTED POLYCRYSTALLINE SILICON SOLAR CELLS. Solar Cells. 38: 51-57.  0.721
1985 Sinke W, Frijlink GPA, Saris FW. Oxygen in titanium nitride diffusion barriers Applied Physics Letters. 47: 471-473. DOI: 10.1063/1.96151  0.609
1985 Sinke W, Saris FW. LOW-ENERGY, PULSED-LASER IRRADIATION OF AMORPHOUS SILICON: MELTING AND RESOLIDIFICATION AT TWO FRONTS. Materials Research Society Symposia Proceedings. 35: 175-180.  0.701
1985 Sinke W, Polman A, Van Sark WGJHM, Saris FW. USE OF A PULSED LASER FOR SHALLOW-JUNCTION PROCESSING. Commission of the European Communities, (Report) Eur. 1011-1016.  0.637
1984 Sinke W, Saris FW. Evidence for a self-propagating melt in amorphous silicon upon pulsed-laser irradiation Physical Review Letters. 53: 2121-2124. DOI: 10.1103/PhysRevLett.53.2121  0.687
1984 Sinke W, van Sark W, Doorn S, Saris FW, Donon J, Loubly P, David G. POLYSILICON SOLAR CELLS MADE BY ION IMPLANTATION AND PULSED LASER ANNEALING. Commission of the European Communities, (Report) Eur. 1095-1103.  0.685
1982 Sinke W, Hoonhout D, Saris FW. INFLUENCE OF SURFACE TEXTURE AND THERMAL TREATMENT ON THE PERFORMANCE OF LASER-ANNEALED SILICON SOLAR CELLS Commission of the European Communities, (Report) Eur. 1029-1033.  0.695
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