Year |
Citation |
Score |
2020 |
Long Y, Huang JZ, Huang Q, Xu N, Jiang X, Niu Z, Huang R, Li S. Piezoelectric Tunnel FET With a Steep Slope Ieee Electron Device Letters. 41: 948-951. DOI: 10.1109/Led.2020.2988412 |
0.374 |
|
2020 |
Luo S, Xu N, Wang Y, Hong J, You L. Thermally Assisted Skyrmion Memory (TA-SKM) Ieee Electron Device Letters. 41: 932-935. DOI: 10.1109/Led.2020.2986312 |
0.314 |
|
2019 |
Long Y, Huang JZ, Huang Q, Xu N, Jiang X, Niu Z, Esseni D, Huang R, Li S. Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering Ieee Transactions On Electron Devices. 66: 4982-4988. DOI: 10.1109/Ted.2019.2940687 |
0.334 |
|
2019 |
Zhou J, Han G, Xu N, Li J, Peng Y, Liu Y, Zhang J, Sun Q, Zhang DW, Hao Y. Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 4419-4424. DOI: 10.1109/Ted.2019.2931402 |
0.343 |
|
2019 |
Peng Y, Xu N, Liu TK, Hao Y, Xiao W, Han G, Liu Y, Wu J, Wang K, He Y, Yu Z, Wang X. Nanocrystal-Embedded-Insulator (NEI) Ferroelectric Field-Effect Transistor Featuring Low Operating Voltages and Improved Synaptic Behavior Ieee Electron Device Letters. 40: 1933-1936. DOI: 10.1109/Led.2019.2947086 |
0.322 |
|
2019 |
Liu H, Wang C, Han G, Li J, Peng Y, Liu Y, Wang X, Zhong N, Duan C, Wang X, Xu N, Liu TK, Hao Y. ZrO2 Ferroelectric FET for Non-volatile Memory Application Ieee Electron Device Letters. 40: 1419-1422. DOI: 10.1109/Led.2019.2930458 |
0.319 |
|
2019 |
Luo S, Xu N, Guo Z, Zhang Y, Hong J, You L. Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications Ieee Electron Device Letters. 40: 635-638. DOI: 10.1109/Led.2019.2898275 |
0.35 |
|
2019 |
Zhou J, Han G, Xu N, Li J, Peng Y, Liu Y, Zhang J, Sun Q, Zhang DW, Hao Y. Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors Ieee Electron Device Letters. 40: 329-332. DOI: 10.1109/Led.2018.2886426 |
0.365 |
|
2019 |
Peng Y, Xiao W, Han G, Wu J, Liu H, Liu Y, Xu N, Liu TK, Hao Y. Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q Swing Ieee Electron Device Letters. 40: 9-12. DOI: 10.1109/Led.2018.2881839 |
0.34 |
|
2018 |
Luo S, Song M, Li X, Zhang Y, Hong J, Yang X, Zou X, Xu N, You L. Reconfigurable Skyrmion Logic Gates. Nano Letters. PMID 29350935 DOI: 10.1021/Acs.Nanolett.7B04722 |
0.343 |
|
2018 |
Li X, Song M, Xu N, Luo S, Zou Q, Zhang S, Hong J, Yang X, Min T, Han X, Zou X, Zhu J, Salahuddin S, You L. Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic Functions Ieee Transactions On Electron Devices. 65: 4687-4693. DOI: 10.1109/Ted.2018.2866621 |
0.33 |
|
2018 |
Wang H, Jiang X, Xu N, Han G, Hao Y, Li S, Esseni D. Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs Ieee Electron Device Letters. 39: 444-447. DOI: 10.1109/Led.2018.2791987 |
0.353 |
|
2018 |
Hong J, Stone M, Navarrete B, Luongo K, Zheng Q, Yuan Z, Xia K, Xu N, Bokor J, You L, Khizroev S. 3D multilevel spin transfer torque devices Applied Physics Letters. 112: 112402. DOI: 10.1063/1.5021336 |
0.302 |
|
2015 |
Jiang H, Liu X, Xu N, He Y, Du G, Zhang X. Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs Ieee Electron Device Letters. 36: 1258-1260. DOI: 10.1109/Led.2015.2487045 |
0.316 |
|
2015 |
Qian C, Peschot A, Chen IR, Chen Y, Xu N, Liu TJK. Effect of Body Biasing on the Energy-Delay Performance of Logic Relays Ieee Electron Device Letters. 36: 862-864. DOI: 10.1109/Led.2015.2441116 |
0.576 |
|
2015 |
Xu N, Takeuchi H, Hytha M, Cody NW, Stephenson RJ, Kwak B, Cha SY, Mears RJ, King Liu TJ. Electron mobility enhancement in (100) oxygen-inserted silicon channel Applied Physics Letters. 107. DOI: 10.1063/1.4931431 |
0.682 |
|
2014 |
Xu N, Takeuchi H, Damrongplasit N, Stephenson RJ, Huang X, Cody NW, Hytha M, Mears RJ, Liu TJK. Extension of planar bulk n-channel MOSFET scaling with oxygen insertion technology Ieee Transactions On Electron Devices. 61: 3345-3349. DOI: 10.1109/Ted.2014.2342496 |
0.369 |
|
2014 |
Fujiki J, Xu N, Hutin L, Chen I, Qian C, Liu TK. Microelectromechanical Relay and Logic Circuit Design for Zero Crowbar Current Ieee Transactions On Electron Devices. 61: 3296-3302. DOI: 10.1109/Ted.2014.2336855 |
0.542 |
|
2014 |
Jiang H, Xu N, Chen B, Zeng L, He Y, Du G, Liu X, Zhang X. Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs Semiconductor Science and Technology. 29: 115021. DOI: 10.1088/0268-1242/29/11/115021 |
0.383 |
|
2013 |
Damrongplasit N, Xu N, Takeuchi H, Stephenson RJ, Cody NW, Yiptong A, Huang X, Hytha M, Mears RJ, Liu TK. Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield Ieee Transactions On Electron Devices. 60: 1790-1793. DOI: 10.1109/Ted.2013.2253105 |
0.451 |
|
2013 |
Ho B, Xu N, Wood B, Tran V, Chopra S, Kim Y, Nguyen B, Bonnin O, Mazure C, Kuppurao S, Chang C, Liu TK. Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence Ieee Transactions On Electron Devices. 60: 153-158. DOI: 10.1109/Ted.2012.2230175 |
0.603 |
|
2012 |
Ho B, Sun X, Xu N, Sako T, Maekawa K, Tomoyasu M, Akasaka Y, Bonnin O, Nguyen B, Liu TK. First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability Ieee Transactions On Electron Devices. 59: 2273-2276. DOI: 10.1109/Ted.2012.2201721 |
0.642 |
|
2012 |
Xu N, Ho B, Choi M, Moroz V, Liu TJK. Effectiveness of stressors in aggressively scaled FinFETs Ieee Transactions On Electron Devices. 59: 1592-1598. DOI: 10.1109/Ted.2012.2189861 |
0.599 |
|
2012 |
Ho B, Xu N, Liu TK. pMOSFET Performance Enhancement With Strained Channels Ieee Transactions On Electron Devices. 59: 1468-1474. DOI: 10.1109/Ted.2012.2186576 |
0.581 |
|
2012 |
Xu N, Ho B, Andrieu F, Smith L, Nguyen B, Weber O, Poiroux T, Faynot O, Liu TK. Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs Ieee Electron Device Letters. 33: 318-320. DOI: 10.1109/Led.2011.2179113 |
0.583 |
|
2011 |
Ho B, Xu N, Liu TK. Study of High-Performance Ge pMOSFET Scaling Accounting for Direct Source-to-Drain Tunneling Ieee Transactions On Electron Devices. 58: 2895-2902. DOI: 10.1109/Ted.2011.2159008 |
0.631 |
|
2011 |
Xu N, Wang LTN, Neureuther AR, Liu TJK. Physically based modeling of stress-induced variation in nanoscale transistor performance Ieee Transactions On Device and Materials Reliability. 11: 378-386. DOI: 10.1109/Tdmr.2011.2144598 |
0.358 |
|
2010 |
Wang LTN, Xu N, Liu TJK, Neureuther AR. 45nm-generation parameter-specific ring oscillator monitors Proceedings of Spie - the International Society For Optical Engineering. 7641. DOI: 10.1117/12.846719 |
0.358 |
|
2009 |
Sun B, Liu L, Xu N, Gao B, Wang Y, Han D, Liu X, Han R, Kang J. The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.04C061 |
0.329 |
|
2009 |
Sun X, Sun B, Liu L, Xu N, Liu X, Han R, Kang J, Xiong G, Ma TP. Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application Ieee Electron Device Letters. 30: 334-336. DOI: 10.1109/Led.2009.2014256 |
0.303 |
|
2008 |
Sun B, Liu LF, Xu N, Gao B, Wang Y, Han DD, Liu XY, Han RQ, Kang JF. The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO 2 /Pt Memory Device The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2008.J-9-6 |
0.317 |
|
2008 |
Liu L, Kang J, Xu N, Sun X, Chen C, Sun B, Wang Y, Liu X, Zhang X, Han R. Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices Japanese Journal of Applied Physics. 47: 2701-2703. DOI: 10.1143/Jjap.47.2701 |
0.302 |
|
2008 |
Xu N, Liu LF, Sun X, Chen C, Wang Y, Han DD, Liu XY, Han RQ, Kang JF, Yu B. Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention Semiconductor Science and Technology. 23: 075019. DOI: 10.1088/0268-1242/23/7/075019 |
0.302 |
|
2008 |
Xu N, Liu L, Sun X, Liu X, Han D, Wang Y, Han R, Kang J, Yu B. Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories Applied Physics Letters. 92: 232112. DOI: 10.1063/1.2945278 |
0.312 |
|
2007 |
Liu LF, Kang JF, Tang H, Xu N, Wang Y, Liu XY, Zhang X, Han RQ. Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices The Japan Society of Applied Physics. 2007: 836-837. DOI: 10.7567/Ssdm.2007.J-6-3 |
0.3 |
|
Show low-probability matches. |