| Year |
Citation |
Score |
| 2015 |
Lee A, Pethe A, Joshi A, Bouche G, Koh S, Nimii H, Mujumdar S, Hong Z, Fuchigami N, Lim I, Bodke A, Raymond M, Besser P, Barstow S. Impact of thermal treatments on the schottky barrier height reduction at the Ti-TiOx-Si interface for contact resistance reduction 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348552 |
0.6 |
|
| 2003 |
Joshi AR, Saraswat KC. High performance submicrometer CMOS with metal induced lateral crystallization of amorphous silicon Journal of the Electrochemical Society. 150: G443-G449. DOI: 10.1149/1.1586302 |
0.528 |
|
| 2003 |
Joshi AR, Saraswat KC. Nickel induced crystallization of α-Si gate electrode at 500 °C and MOS capacitor reliability Ieee Transactions On Electron Devices. 50: 1058-1062. DOI: 10.1109/Ted.2003.812496 |
0.415 |
|
| 2003 |
Joshi AR, Krishnamohan T, Saraswat KC. A model for crystal growth during metal induced lateral crystallization of amorphous silicon Journal of Applied Physics. 93: 175-181. DOI: 10.1063/1.1526937 |
0.6 |
|
| 2000 |
Saraswat KC, Banerjee K, Joshi AR, Kalavade P, Kapur P, Souri SJ. 3-D ICs: Motivation, performance analysis, and technology European Solid-State Circuits Conference. 406-414. |
0.536 |
|
| 1999 |
Saraswat KC, Souri SJ, Subramanian V, Joshi AR, Wang AW. Novel 3-D structures Ieee International Soi Conference. 54-55. |
0.68 |
|
| 1989 |
Joshi A, Hu HS, Yaney DL, Gardner D, Saraswat K. Fundamental factors governing improved performance of Al–Si/Ti multilayer metallization for very large scale integration Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 1497-1503. DOI: 10.1116/1.576085 |
0.535 |
|
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