| Year |
Citation |
Score |
| 2016 |
Hu C, McDaniel MD, Jiang A, Posadas A, Demkov A, Ekerdt JG, Yu ET. A low-leakage epitaxial high-κ gate oxide for germanium metal-oxide-semiconductor devices. Acs Applied Materials & Interfaces. PMID 26859048 DOI: 10.1021/Acsami.5B10661 |
0.351 |
|
| 2015 |
Ngo TQ, McDaniel MD, Posadas A, Demkov AA, Ekerdt JG. Oxygen vacancies at the γ-Al<inf>2</inf>O<inf>3</inf>/STO heterointerface grown by atomic layer deposition Materials Research Society Symposium Proceedings. 1730: 14-19. DOI: 10.1557/Opl.2015.294 |
0.487 |
|
| 2015 |
McDaniel MD, Ngo TQ, Hu S, Posadas A, Demkov AA, Ekerdt JG. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors Applied Physics Reviews. 2. DOI: 10.1063/1.4934574 |
0.473 |
|
| 2015 |
McDaniel MD, Hu C, Lu S, Ngo TQ, Posadas A, Jiang A, Smith DJ, Yu ET, Demkov AA, Ekerdt JG. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications Journal of Applied Physics. 117. DOI: 10.1063/1.4906953 |
0.533 |
|
| 2014 |
Hu C, McDaniel MD, Posadas A, Demkov AA, Ekerdt JG, Yu ET. Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon. Nano Letters. 14: 4360-7. PMID 25072099 DOI: 10.1021/Nl501249Q |
0.379 |
|
| 2014 |
Ngo TQ, McDaniel MD, Posadas A, Demkov AA, Ekerdt JG. Growth of crystalline LaAlO3 by atomic layer deposition Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045532 |
0.525 |
|
| 2014 |
McDaniel MD, Ngo TQ, Posadas A, Hu C, Lu S, Smith DJ, Yu ET, Demkov AA, Ekerdt JG. A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201400081 |
0.541 |
|
| 2013 |
Dubourdieu C, Bruley J, Arruda TM, Posadas A, Jordan-Sweet J, Frank MM, Cartier E, Frank DJ, Kalinin SV, Demkov AA, Narayanan V. Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode. Nature Nanotechnology. 8: 748-54. PMID 24077030 DOI: 10.1038/Nnano.2013.192 |
0.404 |
|
| 2013 |
Hu C, Park KW, Posadas A, Jordan-Sweet JL, Demkov AA, Yu ET. Voltage-controlled ferromagnetism and magnetoresistance in LaCoO 3/SrTiO3 heterostructures Journal of Applied Physics. 114. DOI: 10.1063/1.4831673 |
0.455 |
|
| 2013 |
Dubourdieu C, Bruley J, Arruda TM, Posadas AS, Jordan-Sweet J, Frank MM, Cartier E, Frank DJ, Kalinin SV, Demkov AA, Narayanan V. Erratum: Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode (Nature Nanotechnology (2013) 8 (748-754)) Nature Nanotechnology. 8. DOI: 10.1038/Nnano.2013.226 |
0.391 |
|
| 2012 |
Choi M, Posadas A, Dargis R, Shih CK, Demkov AA, Triyoso DH, David Theodore N, Dubourdieu C, Bruley J, Jordan-Sweet J. Strain relaxation in single crystal SrTiO 3 grown on Si (001) by molecular beam epitaxy Journal of Applied Physics. 111. DOI: 10.1063/1.3695998 |
0.461 |
|
| 2011 |
Posadas A, Dargis R, Choi MR, Slepko A, Demkov AA, Kim JJ, Smith DJ. Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3579598 |
0.416 |
|
| 2011 |
Demkov AA, Posadas A, Seo H, Lee JK, Sai N. Emerging physics of oxide heterostructures Physica Status Solidi (B) Basic Research. 248: 2076-2081. DOI: 10.1002/Pssb.201147181 |
0.453 |
|
| 2010 |
Hong X, Hoffman J, Posadas A, Zou K, Ahn CH, Zhu J. Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3 Applied Physics Letters. 97. DOI: 10.1063/1.3467450 |
0.706 |
|
| 2009 |
Hong X, Posadas A, Zou K, Ahn CH, Zhu J. High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides. Physical Review Letters. 102: 136808. PMID 19392391 DOI: 10.1103/Physrevlett.102.136808 |
0.682 |
|
| 2009 |
Reiner JW, Posadas A, Wang M, Sidorov M, Krivokapic Z, Walker FJ, Ma TP, Ahn CH. Electrical properties and interfacial structure of epitaxial LaAlO 3 on Si (001) Journal of Applied Physics. 105. DOI: 10.1063/1.3148243 |
0.732 |
|
| 2008 |
Posadas A, Walker FJ, Ahn CH, Goodrich TL, Cai Z, Ziemer KS. Epitaxial MgO as an alternative gate dielectric for SiC transistor applications Applied Physics Letters. 92. DOI: 10.1063/1.2944865 |
0.631 |
|
| 2008 |
Reiner JW, Posadas A, Wang M, Ma TP, Ahn CH. Growth and structural properties of crystalline LaAlO3 on Si (0 0 1) Microelectronic Engineering. 85: 36-38. DOI: 10.1016/J.Mee.2007.07.004 |
0.713 |
|
| 2007 |
Yau JB, Hong X, Posadas A, Ahn CH, Gao W, Altman E, Bason Y, Klein L, Sidorov M, Krivokapic Z. Anisotropic magnetoresistance in colossal magnetoresistive La1-x Srx MnO3 thin films Journal of Applied Physics. 102. DOI: 10.1063/1.2811919 |
0.635 |
|
| 2006 |
Posadas A, Yau JB, Ahn CH. Epitaxial multiferroic hexagonal manganite thin films grown on ZnO Physica Status Solidi (B) Basic Research. 243: 2085-2088. DOI: 10.1002/Pssb.200666820 |
0.624 |
|
| 2005 |
Posadas A, Yau JB, Ahn CH, Han J, Gariglio S, Johnston K, Rabe KM, Neaton JB. Epitaxial growth of multiferroic YMnO 3 on GaN Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2120903 |
0.558 |
|
| 2005 |
Hong X, Posadas A, Ahn CH. Examining the screening limit of field effect devices via the metal-insulator transition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1897076 |
0.648 |
|
| 2005 |
Li M, Posadas A, Ahn CH, Altman EI. Scanning tunneling microscopy study of terminal oxygen structures on WO3(1 0 0) thin films Surface Science. 579: 175-187. DOI: 10.1016/J.Susc.2005.02.007 |
0.581 |
|
| 2004 |
Li M, Altman EI, Posadas A, Ahn CH. Surface phase transitions upon reduction of epitaxial WO3(1 0 0) thin films Thin Solid Films. 446: 238-247. DOI: 10.1016/J.Tsf.2003.10.002 |
0.581 |
|
| 2004 |
Hong X, Xiao F, Reiner JW, Posadas A, Ahn CH. Growth and characterization of La0.8Sr0.2MnO 3/Pb(Zr0.2Ti0.8)O3/La 0.8Sr0.2MnO3 heterostructures for three-dimensional circuit studies Annalen Der Physik (Leipzig). 13: 15-19. DOI: 10.1002/Andp.200310035 |
0.728 |
|
| 2003 |
Hong X, Posadas A, Lin A, Ahn CH. Ferroelectric-field-induced tuning of magnetism in the colossal magnetoresistive oxide La 1 − x Sr x MnO 3 Physical Review B. 68: 134415. DOI: 10.1103/Physrevb.68.134415 |
0.557 |
|
| 2003 |
Li M, Altman EI, Posadas A, Ahn CH. The p(4×2) surface reconstruction on epitaxial WO3 thin films Surface Science. 542: 22-32. DOI: 10.1016/S0039-6028(03)00986-5 |
0.582 |
|
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