| Year |
Citation |
Score |
| 2018 |
Igo J, Zhou S, Yu Z, Amnuayphol OP, Zhao F, Gu Y. Anharmonic Phonon Coupling in Single-Crystal Semiconducting and Metal-Like van der Waals In2Se3 Journal of Physical Chemistry C. 122: 22849-22855. DOI: 10.1021/Acs.Jpcc.8B06247 |
0.317 |
|
| 2018 |
Yang L, Igo J, Gabel M, Gu Y. In-Plane Homojunctions and Their Dominant Effects on Charge Transport in Vertical van der Waals Heterostructures Journal of Physical Chemistry C. 122: 20513-20520. DOI: 10.1021/Acs.Jpcc.8B04133 |
0.301 |
|
| 2017 |
Wang Q, Yang L, Zhou S, Ye X, Wang Z, Zhu W, McCluskey MD, Gu Y. Phase-Defined Van der Waals Schottky Junctions with Significantly Enhanced Thermoelectric Properties. The Journal of Physical Chemistry Letters. PMID 28593766 DOI: 10.1021/Acs.Jpclett.7B01089 |
0.35 |
|
| 2016 |
Mafi E, Tao X, Zhu W, Gao Y, Wang C, Gu Y. Generation and the role of dislocations in single-crystalline phase-change In2Se3 nanowires under electrical pulses. Nanotechnology. 27: 335704. PMID 27389929 DOI: 10.1088/0957-4484/27/33/335704 |
0.324 |
|
| 2016 |
Zhou S, Tao X, Gu Y. Thickness-Dependent Thermal Conductivity of Suspended Two-Dimensional Single-Crystal In2Se3 Layers Grown by Chemical Vapor Deposition Journal of Physical Chemistry C. 120: 4753-4758. DOI: 10.1021/Acs.Jpcc.5B10905 |
0.329 |
|
| 2015 |
Yang L, Wang Q, Tao X, Taylor SP, Gu Y. Gate-tunable photocurrent in ZnO nanowires mediated by nanowire-substrate interface states Applied Physics Letters. 106. DOI: 10.1063/1.4914108 |
0.361 |
|
| 2014 |
Tao X, Mafi E, Gu Y. Synthesis and Ultrafast Carrier Dynamics of Single-Crystal Two-Dimensional CuInSe2 Nanosheets. The Journal of Physical Chemistry Letters. 5: 2857-62. PMID 26278089 DOI: 10.1021/Jz501242M |
0.323 |
|
| 2012 |
Soudi A, Hsu CH, Gu Y. Diameter-dependent surface photovoltage and surface state density in single semiconductor nanowires. Nano Letters. 12: 5111-6. PMID 22985208 DOI: 10.1021/Nl301863E |
0.616 |
|
| 2012 |
Hsu C, Wang Q, Tao X, Gu Y. Electrostatics and electrical transport in semiconductor nanowire Schottky diodes Applied Physics Letters. 101: 183103. DOI: 10.1063/1.4765653 |
0.322 |
|
| 2012 |
Soudi A, Aivazian G, Shi SF, Xu XD, Gu Y. Probing transconductance spatial variations in graphene nanoribbon field-effect transistors using scanning gate microscopy Applied Physics Letters. 100. DOI: 10.1063/1.3678034 |
0.61 |
|
| 2012 |
Mafi E, Soudi A, Gu Y. Electronically driven amorphization in phase-change In 2Se 3 nanowires Journal of Physical Chemistry C. 116: 22539-22544. DOI: 10.1021/Jp305696W |
0.62 |
|
| 2011 |
Soudi A, Dawson RD, Gu Y. Quantitative heat dissipation characteristics in current-carrying GaN nanowires probed by combining scanning thermal microscopy and spatially resolved Raman spectroscopy. Acs Nano. 5: 255-62. PMID 21155591 DOI: 10.1021/Nn102818S |
0.615 |
|
| 2010 |
Soudi A, Dhakal P, Gu Y. Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires Applied Physics Letters. 96. DOI: 10.1063/1.3456390 |
0.636 |
|
| 2010 |
Xu F, Qin Q, Mishra A, Gu Y, Zhu Y. Mechanical Properties of ZnO Nanowires Under Different Loading Modes Nano Research. 3: 271-280. DOI: 10.1007/S12274-010-1030-4 |
0.322 |
|
| 2009 |
Zhu Y, Qin Q, Gu Y, Wang Z. Friction and shear strength at the nanowire-substrate interfaces. Nanoscale Research Letters. 5: 291-5. PMID 20672129 DOI: 10.1007/S11671-009-9478-4 |
0.311 |
|
| 2009 |
Soudi A, Khan EH, Dickinson JT, Gu Y. Observation of unintentionally incorporated nitrogen-related complexes in ZnO and GaN nanowires. Nano Letters. 9: 1844-9. PMID 19323477 DOI: 10.1021/Nl803830N |
0.627 |
|
| 2009 |
Shuvayev VA, Kuskovsky IL, Deych LI, Gu Y, Gong Y, Neumark GF, Tamargo MC, Lisyansky AA. Dynamics of the radiative recombination in cylindrical nanostructures with type-II band alignment Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115307 |
0.336 |
|
| 2009 |
Soudi A, Lopez R, Dawson RD, Gu Y. Anharmonic phonon coupling in vapor-liquid-solid grown ZnO nanowires Applied Physics Letters. 95. DOI: 10.1063/1.3263709 |
0.626 |
|
| 2006 |
Gu Y, Romankiewicz JP, David JK, Lensch JL, Lauhon LJ, Kwak ES, Odom TW. Local photocurrent mapping as a probe of contact effects and charge carrier transport in semiconductor nanowire devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2172-2177. DOI: 10.1116/1.2216717 |
0.31 |
|
| 2006 |
Kuskovsky IL, Gu Y, Gong Y, Yan HF, Lau J, Noyan IC, Neumark GF, Maksimov O, Zhou X, Tamargo MC, Volkov V, Zhu Y, Wang L. Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.195306 |
0.345 |
|
| 2006 |
Gu Y, Lauhon LJ. Space-charge-limited current in nanowires depleted by oxygen adsorption Applied Physics Letters. 89. DOI: 10.1063/1.2358316 |
0.313 |
|
| 2006 |
Gong Y, Yan HF, Kuskovsky IL, Gu Y, Noyan IC, Neumark GF, Tamargo MC. Structure of Zn-Se-Te system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2184434 |
0.333 |
|
| 2006 |
Gu Y, Romankiewicz JP, David JK, Lensch JL, Lauhon LJ. Quantitative measurement of the electron and hole mobility-lifetime products in semiconductor nanowires Nano Letters. 6: 948-952. DOI: 10.1021/Nl052576Y |
0.347 |
|
| 2005 |
Gu Y, Kwak ES, Lensch JL, Allen JE, Odom TW, Lauhon LJ. Near-field scanning photocurrent microscopy of a nanowire photodetector Applied Physics Letters. 87. DOI: 10.1063/1.1996851 |
0.326 |
|
| 2005 |
Zhu Z, Chen T, Gu Y, Warren J, Osgood RM. Zinc Oxide Nanowires Grown by Vapor-Phase Transport Using Selected Metal Catalysts: A Comparative Study Chemistry of Materials. 17: 4227-4234. DOI: 10.1021/Cm050584+ |
0.326 |
|
| 2004 |
Yin M, Gu Y, Kuskovsky IL, Andelman T, Zhu Y, Neumark GF, O'Brien S. Zinc oxide quantum rods. Journal of the American Chemical Society. 126: 6206-7. PMID 15149198 DOI: 10.1021/Ja031696+ |
0.311 |
|
| 2004 |
Zhou X, Muñoz M, Guo S, Tamargo MC, Gu Y, Kuskovsky IL, Neumark GF. CdSe quantum dots grown on ZnSe and Zn[sub 0.97]Be[sub 0.03]Se by molecular-beam epitaxy: Optical studies Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 1518. DOI: 10.1116/1.1690780 |
0.317 |
|
| 2004 |
Gu Y, Kuskovsky IL, Yin M, O'Brien S, Neumark GF. Quantum confinement in ZnO nanorods Applied Physics Letters. 85: 3833-3835. DOI: 10.1063/1.1811797 |
0.33 |
|
| 2004 |
Kuskovsky IL, Gu Y, Neumark GF, Guo SP, Tamargo MC. Optical properties of semiconductors with the Coulomb potential fluctuation: case of co-doped ZnSe:(N,Cl) Physica Status Solidi (C). 1: 686-689. DOI: 10.1002/Pssc.200304241 |
0.324 |
|
| 2004 |
Gu Y, Kuskovsky IL, Fung J, Neumark GF, Zhou X, Guo SP, Tamargo MC. Optical investigation of CdSe/Zn(Be)Se quantum dot structures: size and Cd composition Physica Status Solidi (C). 1: 779-782. DOI: 10.1002/Pssc.200304223 |
0.308 |
|
| 2004 |
Kuskovsky IL, Gu Y, Van Der Voort M, Neumark GF, Zhou X, Muñoz M, Tamargo MC. Quantum structures in Zn-Se-Te system containing submonolayer quantities of Te Physica Status Solidi (B) Basic Research. 241: 527-530. DOI: 10.1002/Pssb.200304240 |
0.311 |
|
| 2004 |
Gu Y, Kuskovsky IL, Van Der Voort M, Neumark GF, Zhou X, Muñoz M, Tamargo MC. Time resolved photoluminescence studies of Zn-Se-Te nanostructures with sub-monolayer quantities of Te grown by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 241: 515-518. DOI: 10.1002/Pssb.200304224 |
0.332 |
|
| 2003 |
Gong Y, Gu Y, Kuskovsky IL, Neumark GF, Li J, Lin JY, Jiang HX, Ferguson I. Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.16 |
0.304 |
|
| 2003 |
Gu Y, Kuskovsky IL, Neumark GF, Zhou X, Maksimov O, Guo SP, Tamargo MC. Observation of free-to-acceptor-type photoluminescence in chlorine-doped Zn(Be)Se Journal of Luminescence. 104: 77-83. DOI: 10.1016/S0022-2313(02)00666-X |
0.302 |
|
| 2002 |
Kuskovsky I, Gu Y, Tian C, Neumark G, Guo S, Lin W, Maksimov O, Tamargo M, Alyoshin A, Belous V. Heavily p-Type Doped ZnSe and ZnBeSe Physica Status Solidi (B). 229: 385-389. DOI: 10.1002/1521-3951(200201)229:1<385::Aid-Pssb385>3.0.Co;2-8 |
0.309 |
|
| 2002 |
Kuskovsky IL, Gu Y, Van Der Voort M, Tian C, Kim B, Herman IP, Neumark GF, Guo SP, Maksimov O, Tamargo MC. Properties of MBE-grown ZnBeSe: Study of be isoelectronic trasp and of dopant behavior Physica Status Solidi (B) Basic Research. 229: 239-243. DOI: 10.1002/1521-3951(200201)229:1<239::Aid-Pssb239>3.0.Co;2-G |
0.308 |
|
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