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Ha S. Kim, Ph.D. - Publications

Affiliations: 
2010 Electrical Engineering University of New Mexico, Albuquerque, NM, United States 
Area:
Infrared imaging
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43 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Kim HS. Optical and Electrical Study of InAs/GaSb Type II Strained Layer Superlattice for Mid-wave Infrared Detector Journal of the Korean Physical Society. 74: 358-362. DOI: 10.3938/Jkps.74.358  0.525
2018 Kim HS. White Light Emission from a Highly Flexible ZnS Composite Mixed with Polymer Composites Under the AC Electric Field Journal of the Korean Physical Society. 72: 551-554. DOI: 10.3938/Jkps.72.551  0.323
2016 Lee B, Kwak HM, Kim HS. Transmittance of long-wavelength infrared surface plasmon by hexagonal periodic metal hole arrays Proceedings of Spie. 9742. DOI: 10.1117/12.2213855  0.379
2015 Kim HS, Myers S, Klein B, Kazemi A, Krishna S, Kim JO, Lee SJ. Dark current improvement of the type-II InAs / GaSb superlattice photodetectors by using a gate bias control Journal of the Korean Physical Society. 66: 535-538. DOI: 10.3938/Jkps.66.535  0.76
2015 Hwang J, Jeon J, Yoon S, Kang BS, Kim DK, Kim HS, Kang SW, Kim JO, Jang WY, Urbas A, Ku Z, Lee SJ. Surface plasmon resonant splitting and merging due to infrared incidence through thermal imaging lens Electronics Letters. 51: 1170-1172. DOI: 10.1049/El.2015.0481  0.658
2014 Tian ZB, Godoy SE, Kim HS, Schuler-Sandy T, Montoya J, Krishna S. Mid-wave infrared interband cascade photodetectors and focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2049988  0.601
2014 Tian ZB, Godoy SE, Kim HS, Schuler-Sandy T, Montoya JA, Krishna S. High operating temperature interband cascade focal plane arrays Applied Physics Letters. 105. DOI: 10.1063/1.4892634  0.579
2013 Tian ZB, Schuler-Sandy T, Godoy SE, Kim HS, Krishna S. High-operating-temperature MWIR detectors using type II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8867. DOI: 10.1117/12.2024587  0.601
2013 Tian ZB, Schuler-Sandy T, Godoy SE, Kim HS, Montoya J, Myers S, Klein B, Plis E, Krishna S. Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2016125  0.767
2013 Cellek OO, He Z, Lin Z, Kim HS, Liu S, Zhang Y. InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures Proceedings of Spie. 8631. DOI: 10.1117/12.2007612  0.464
2013 Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger DR, Kim HS, Tian ZB, Krishna S. Barrier engineered infrared photodetectors based on type-ii inas/gasb strained layer superlattices Ieee Journal of Quantum Electronics. 49: 211-217. DOI: 10.1109/Jqe.2012.2236643  0.829
2012 Takei K, Madsen M, Fang H, Kapadia R, Chuang S, Kim HS, Liu CH, Plis E, Nah J, Krishna S, Chueh YL, Guo J, Javey A. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. Nano Letters. 12: 2060-6. PMID 22409386 DOI: 10.1021/Nl300228B  0.572
2012 Cellek OO, Li H, Shen X, Lin Z, Steenbergen EH, Ding D, Liu S, Zhang Q, Kim HS, Fan J, DiNezza MJ, Dettlaff WHG, Webster PT, He Z, Li J, et al. InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications Proceedings of Spie. 8353. DOI: 10.1117/12.925076  0.433
2012 Fang H, Chuang S, Takei K, Kim HS, Plis E, Liu CH, Krishna S, Chueh YL, Javey A. Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors Ieee Electron Device Letters. 33: 504-506. DOI: 10.1109/Led.2012.2185477  0.571
2012 Kim HS, Cellek OO, Lin ZY, He ZY, Zhao XH, Liu S, Li H, Zhang Y. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices Applied Physics Letters. 101: 161114. DOI: 10.1063/1.4760260  0.55
2011 Takei K, Fang H, Kumar SB, Kapadia R, Gao Q, Madsen M, Kim HS, Liu CH, Chueh YL, Plis E, Krishna S, Bechtel HA, Guo J, Javey A. Quantum confinement effects in nanoscale-thickness InAs membranes. Nano Letters. 11: 5008-12. PMID 22007924 DOI: 10.1021/Nl2030322  0.532
2011 Ford AC, Yeung CW, Chuang S, Kim HS, Plis E, Krishna S, Hu C, Javey A. Ultrathin body InAs tunneling field-effect transistors on Si substrates Applied Physics Letters. 98: 113105. DOI: 10.1063/1.3567021  0.571
2011 Fang H, Madsen M, Carraro C, Takei K, Kim HS, Plis E, Chen SY, Krishna S, Chueh YL, Maboudian R, Javey A. Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator Applied Physics Letters. 98. DOI: 10.1063/1.3537963  0.545
2011 Gautam N, Kim H, Myers S, Plis E, Kutty M, Naydenkov M, Klein B, Dawson L, Krishna S. Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection Infrared Physics & Technology. 54: 273-277. DOI: 10.1016/J.Infrared.2010.12.028  0.81
2011 Plis E, Kutty M, Myers S, Kim H, Gautam N, Dawson L, Krishna S. Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors Infrared Physics & Technology. 54: 252-257. DOI: 10.1016/J.Infrared.2010.12.024  0.753
2010 Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9. PMID 21068839 DOI: 10.1038/Nature09541  0.583
2010 Myers SA, Khoshakhlagh A, Mailfert J, Wanninkhof P, Plis E, Kutty MN, Kim HS, Gautam N, Klein B, Smith EPG, Krishna S. Performance of InAsSb-based infrared detectors with nBn design Proceedings of Spie. 7808: 780805. DOI: 10.1117/12.862295  0.779
2010 Wong AF, Nelson MJ, Plis EA, Skrutskie MF, Yao L, Vandervelde T, Krishna S, Kim H, Khoshakhlagh A, Myers SA. Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation Proceedings of Spie - the International Society For Optical Engineering. 7742. DOI: 10.1117/12.857786  0.801
2010 Khoshakhlagh A, Myers S, Plis E, Kutty MN, Klein B, Gautam N, Kim H, Smith EPG, Rhiger D, Johnson SM, Krishna S. Mid-wavelength InAsSb detectors based on nBn design Proceedings of Spie. 7660. DOI: 10.1117/12.850428  0.791
2010 Montoya J, Barve A, Shenoi R, Naydenkov M, Kim H, Ku Z, Brueck SRJ, Krishna S, Lee SJ, Noh SK. Backside illuminated infrared detectors with plasmonic resonators Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.850382  0.78
2010 Kim HS, Plis E, Gautam N, Khoshakhlagh A, Myers S, Kutty MN, Sharma Y, Dawson LR, Krishna S. SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors Proceedings of Spie. 7660. DOI: 10.1117/12.850284  0.829
2010 Gautam N, Plis E, Kim HS, Kutty MN, Myers S, Khoshakhlagh A, Dawson LR, Krishna S. Heterostructure band engineering of type-II InAs/GaSb superlattice based longwave infrared photodiodes using unipolar current blocking barriers Proceedings of Spie. 7660. DOI: 10.1117/12.849889  0.816
2010 Plis E, Khoshakhlagh A, Myers S, Kim HS, Gautam N, Sharma YD, Krishna S, Lee SJ, Noh SK. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C3G13-C3G18. DOI: 10.1116/1.3276429  0.819
2010 Khoshakhlagh A, Myers S, Kim H, Plis E, Gautam N, Lee SJ, Noh SK, Dawson LR, Krishna S. Long-Wave InAs/GaSb Superlattice Detectors Based on nBn and Pin Designs Ieee Journal of Quantum Electronics. 46: 959-964. DOI: 10.1109/Jqe.2010.2041635  0.835
2010 Plis E, Rodriguez JB, Balakrishnan G, Sharma YD, Kim HS, Rotter T, Krishna S. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate Semiconductor Science and Technology. 25: 085010. DOI: 10.1088/0268-1242/25/8/085010  0.676
2010 Gautam N, Kim HS, Kutty MN, Plis E, Dawson LR, Krishna S. Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers Applied Physics Letters. 96: 231107. DOI: 10.1063/1.3446967  0.787
2010 Myers S, Plis E, Kim HS, Khoshakhlagh A, Gautam N, Lee SJ, Noh SK, Krishna S. Heterostructure engineering in Type II InAs/GaSb strained layer superlattices Physica Status Solidi (C). 7: 2506-2509. DOI: 10.1002/Pssc.200983869  0.817
2009 Kim HS, Plis E, Myers S, Khoshakhlagh A, Gautam N, Kutty MN, Sharma YD, Dawson LR, Krishna S. Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation Proceedings of Spie. 7467. DOI: 10.1117/12.826775  0.823
2009 Khoshakhlagh A, Kim HS, Myers S, Gautam N, Lee SJ, Plis E, Noh SK, Dawson LR, Krishna S. Long wavelength InAs/GaSb superlattice detectors based on nBn and pin design Proceedings of Spie. 7298. DOI: 10.1117/12.818419  0.819
2009 Myers S, Plis E, Khoshakhlagh A, Kim HS, Sharma Y, Dawson R, Krishna S, Gin A. The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors Applied Physics Letters. 95: 121110. DOI: 10.1063/1.3230069  0.829
2009 Plis E, Myers S, Khoshakhlagh A, Kim HS, Sharma Y, Gautam N, Dawson R, Krishna S. InAs/GaSb strained layer superlattice detectors with nBn design Infrared Physics & Technology. 52: 335-339. DOI: 10.1016/J.Infrared.2009.09.008  0.84
2008 Bishop G, Plis E, Rodriguez JB, Sharma YD, Kim HS, Dawson LR, Krishna S. nBn detectors based on InAs∕GaSb type-II strain layer superlattice Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1145. DOI: 10.1116/1.2830627  0.694
2008 Plis E, Kim HS, Bishop G, Krishna S, Banerjee K, Ghosh S. Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors Applied Physics Letters. 93. DOI: 10.1063/1.2990049  0.578
2008 Kim HS, Plis E, Rodriguez JB, Bishop GD, Sharma YD, Dawson LR, Krishna S, Bundas J, Cook R, Burrows D, Dennis R, Patnaude K, Reisinger A, Sundaram M. Mid-IR focal plane array based on type-II InAs∕GaSb strain layer superlattice detector with nBn design Applied Physics Letters. 92: 183502. DOI: 10.1063/1.2920764  0.674
2008 Kim HS, Plis E, Rodriguez JB, Bishop G, Sharma YD, Krishna S. N-type ohmic contact on type-II InAs/GaSb strained layer superlattices Electronics Letters. 44: 881-882. DOI: 10.1049/El:20081294  0.502
2007 Khoshakhlagh A, Rodriguez JB, Plis E, Bishop GD, Sharma YD, Kim HS, Dawson LR, Krishna S. Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors Applied Physics Letters. 91: 263504. DOI: 10.1063/1.2824819  0.795
2007 Plis E, Rodriguez JB, Kim HS, Bishop G, Sharma YD, Dawson LR, Krishna S, Lee SJ, Jones CE, Gopal V. Type II InAs∕GaSb strain layer superlattice detectors with p-on-n polarity Applied Physics Letters. 91: 133512. DOI: 10.1063/1.2790078  0.613
2007 Rodriguez JB, Plis E, Bishop G, Sharma YD, Kim H, Dawson LR, Krishna S. nBn structure based on InAs∕GaSb type-II strained layer superlattices Applied Physics Letters. 91: 043514. DOI: 10.1063/1.2760153  0.651
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