H.-s.philip Wong - Publications

Affiliations: 
Stanford University, Palo Alto, CA 
Area:
Electrical Engineering

191 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Tang A, Kumar A, Jaikissoon M, Saraswat K, Wong HP, Pop E. Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS. Acs Applied Materials & Interfaces. PMID 34427445 DOI: 10.1021/acsami.1c06812  1
2021 Wang CH, Chen V, McClellan CJ, Tang A, Vaziri S, Li L, Chen ME, Pop E, Wong HP. Ultrathin Three-Monolayer Tunneling Memory Selectors. Acs Nano. PMID 33944559 DOI: 10.1021/acsnano.1c00002  1
2021 Wang Y, Landreman P, Schoen D, Okabe K, Marshall A, Celano U, Wong HP, Park J, Brongersma ML. Electrical tuning of phase-change antennas and metasurfaces. Nature Nanotechnology. PMID 33875869 DOI: 10.1038/s41565-021-00882-8  0.01
2021 Yang MX, Hu X, Akin D, Poon A, Wong HP. Intracellular detection and communication of a wireless chip in cell. Scientific Reports. 11: 5967. PMID 33727598 DOI: 10.1038/s41598-021-85268-5  1
2020 Zarcone RV, Engel JH, Eryilmaz SB, Wan W, Kim S, BrightSky M, Lam C, Lung HL, Olshausen BA, Wong HP. Author Correction: Analog Coding in Emerging Memory Systems. Scientific Reports. 10: 13404. PMID 32747716 DOI: 10.1038/S41598-020-70121-Y  0.01
2020 Chen TA, Chuu CP, Tseng CC, Wen CK, Wong HP, Pan S, Li R, Chao TA, Chueh WC, Zhang Y, Fu Q, Yakobson BI, Chang WH, Li LJ. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature. PMID 32132712 DOI: 10.1038/S41586-020-2009-2  1
2020 Park RS, Kim HJK, Pitner G, Neumann C, Mitra S, Wong H-P. Molybdenum oxide on carbon nanotube: Doping stability and correlation with work function Journal of Applied Physics. 128: 45111. DOI: 10.1063/5.0013778  1
2019 Akinwande D, Huyghebaert C, Wang CH, Serna MI, Goossens S, Li LJ, Wong HP, Koppens FHL. Graphene and two-dimensional materials for silicon technology. Nature. 573: 507-518. PMID 31554977 DOI: 10.1038/s41586-019-1573-9  1
2019 Desai SB, Fahad HM, Lundberg T, Pitner G, Kim H, Chrzan D, Wong HP, Javey A. Gate Quantum Capacitance Effects in Nanoscale Transistors. Nano Letters. PMID 31532995 DOI: 10.1021/Acs.Nanolett.9B02660  0.01
2019 Bohaichuk SM, Kumar S, Pitner G, McClellan CJ, Jeong J, Samant MG, Wong HP, Parkin SSP, Williams RS, Pop E. Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device. Nano Letters. PMID 31433663 DOI: 10.1021/Acs.Nanolett.9B01554  0.01
2019 Bohaichuk SM, Muñoz Rojo M, Pitner G, McClellan CJ, Lian F, Li J, Jeong J, Samant MG, Parkin SSP, Wong HP, Pop E. Localized Triggering of the Insulator-Metal Transition in VO Using a Single Carbon Nanotube. Acs Nano. PMID 31393698 DOI: 10.1021/Acsnano.9B03397  0.01
2019 Zhou F, Zhou Z, Chen J, Choy TH, Wang J, Zhang N, Lin Z, Yu S, Kang J, Wong HP, Chai Y. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nature Nanotechnology. PMID 31308498 DOI: 10.1038/S41565-019-0501-3  1
2019 Lei T, Shao LL, Zheng YQ, Pitner G, Fang G, Zhu C, Li S, Beausoleil R, Wong HP, Huang TC, Cheng KT, Bao Z. Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes. Nature Communications. 10: 2161. PMID 31089127 DOI: 10.1038/S41467-019-10145-9  1
2019 Li MY, Su SK, Wong HP, Li LJ. How 2D semiconductors could extend Moore's law. Nature. 567: 169-170. PMID 30862924 DOI: 10.1038/d41586-019-00793-8  1
2019 Pitner G, Hills G, Llinas JP, Persson KM, Park RS, Bokor J, Mitra S, Wong HP. Low-Temperature Side-Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length. Nano Letters. PMID 30677297 DOI: 10.1021/Acs.Nanolett.8B04370  1
2019 Barré E, Incorvia JAC, Kim SH, McClellan CJ, Pop E, Wong HP, Heinz TF. Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe Transistors. Nano Letters. PMID 30601667 DOI: 10.1021/Acs.Nanolett.8B03838  0.01
2019 Qin S, Jiang Z, Li H, Fujii S, Lee D, Wong SS, Wong H-P. Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part I: Accurate and Computationally Efficient Modeling Ieee Transactions On Electron Devices. 66: 5139-5146. DOI: 10.1109/Ted.2019.2950606  1
2019 Jiang Z, Qin S, Li H, Fujii S, Lee D, Wong S, Wong H-P. Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part II: Design Guidelines for Device, Array, and Architecture Ieee Transactions On Electron Devices. 66: 5147-5154. DOI: 10.1109/Ted.2019.2950595  1
2019 Le BQ, Grossi A, Vianello E, Wu T, Lama G, Beigne E, Wong H-P, Mitra S. Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell Ieee Transactions On Electron Devices. 66: 641-646. DOI: 10.1109/Ted.2018.2879788  1
2019 Bishop MD, Wong H-P, Mitra S, Shulaker MM. Monolithic 3-D Integration Ieee Micro. 39: 16-27. DOI: 10.1109/Mm.2019.2942982  1
2018 Seo S, Jo SH, Kim S, Shim J, Oh S, Kim JH, Heo K, Choi JW, Choi C, Oh S, Kuzum D, Wong HP, Park JH. Artificial optic-neural synapse for colored and color-mixed pattern recognition. Nature Communications. 9: 5106. PMID 30504804 DOI: 10.1038/s41467-018-07572-5  0.01
2018 Wang CH, Incorvia JAC, McClellan CJ, Yu AC, Mleczko MJ, Pop E, Wong HP. Unipolar N-type Black Phosphorus Transistors with Low Work Function Contacts. Nano Letters. PMID 29620900 DOI: 10.1021/Acs.Nanolett.7B05192  1
2018 Parizi KB, Akin D, Wong HP. Internalization of subcellular-scale microfabricated chips by healthy and cancer cells. Plos One. 13: e0194712. PMID 29601607 DOI: 10.1371/journal.pone.0194712  1
2018 Hills G, Bardon MG, Doornbos G, Yakimets D, Schuddinck P, Baert R, Jang D, Mattii L, Sherazi SMY, Rodopoulos D, Ritzenthaler R, Lee C, Thean AV, Radu I, Spessot A, ... ... Wong H-P, et al. Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI Ieee Transactions On Nanotechnology. 17: 1259-1269. DOI: 10.1109/Tnano.2018.2871841  1
2018 Fujii S, Incorvia JAC, Yuan F, Qin S, Hui F, Shi Y, Chai Y, Lanza M, Wong H-P. Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance Ieee Electron Device Letters. 39: 23-26. DOI: 10.1109/Led.2017.2771718  1
2017 Shulaker MM, Hills G, Park RS, Howe RT, Saraswat K, Wong HP, Mitra S. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip. Nature. 547: 74-78. PMID 28682331 DOI: 10.1038/Nature22994  1
2017 Feng Y, Zhang K, Li H, Wang F, Zhou B, Fang M, Wang W, Wei J, Wong HSP. In situ visualization and detection of surface potential variation of mono and multilayer MoS2 under different humidities using Kelvin probe force microscopy. Nanotechnology. 28: 295705. PMID 28664874 DOI: 10.1088/1361-6528/aa7183  0.01
2017 Chortos A, Pochorovski I, Lin P, Pitner G, Yan X, Gao TZ, To JWF, Lei T, Will JW, Wong HP, Bao Z. Universal Selective Dispersion of Semiconducting Carbon Nanotubes from Commercial Sources Using a Supramolecular Polymer. Acs Nano. PMID 28528552 DOI: 10.1021/Acsnano.7B01076  1
2017 Yao P, Wu H, Gao B, Eryilmaz SB, Huang X, Zhang W, Zhang Q, Deng N, Shi L, Wong HP, Qian H. Face classification using electronic synapses. Nature Communications. 8: 15199. PMID 28497781 DOI: 10.1038/Ncomms15199  0.01
2017 Park RS, Hills G, Sohn J, Mitra S, Shulaker MM, Wong HP. Hysteresis-Free Carbon Nanotube Field-Effect Transistors. Acs Nano. PMID 28463503 DOI: 10.1021/Acsnano.7B01164  1
2017 Yuan F, Zhang Z, Liu C, Zhou F, Yau HM, Lu W, Qiu X, Wong HP, Dai J, Chai Y. Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer. Acs Nano. PMID 28319363 DOI: 10.1021/Acsnano.7B00783  1
2017 Parizi KB, Xu X, Pal A, Hu X, Wong HS. ISFET pH Sensitivity: Counter-Ions Play a Key Role. Scientific Reports. 7: 41305. PMID 28150700 DOI: 10.1038/srep41305  1
2017 Li H, Wu TF, Mitra S, Wong H-P. Resistive RAM-Centric Computing: Design and Modeling Methodology Ieee Transactions On Circuits and Systems I-Regular Papers. 64: 2263-2273. DOI: 10.1109/Tcsi.2017.2709812  1
2016 Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. MoS2 transistors with 1-nanometer gate lengths. Science (New York, N.Y.). 354: 99-102. PMID 27846499 DOI: 10.1126/Science.Aah4698  0.01
2016 Xu X, Hu X, Chen X, Kang Y, Zhang Z, Baghbani Parizi K, Wong HP. Engineering large scale indium nanodot array for refractive index sensing. Acs Applied Materials & Interfaces. PMID 27804293 DOI: 10.1021/acsami.6b11413  1
2016 Guo Y, Liu C, Yin Q, Wei C, Lin S, Hoffman TB, Zhao Y, Edgar JH, Chen Q, Lau SP, Dai J, Yao H, Wong HP, Chai Y. Distinctive In-Plane Cleavage Behaviors of Two-Dimensional Layered Materials. Acs Nano. PMID 27564525 DOI: 10.1021/Acsnano.6B05063  1
2016 Zalden P, Shu MJ, Chen F, Wu X, Zhu Y, Wen H, Johnston S, Shen ZX, Landreman P, Brongersma M, Fong SW, Wong HP, Sher MJ, Jost P, Kaes M, et al. Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials. Physical Review Letters. 117: 067601. PMID 27541475 DOI: 10.1103/Physrevlett.117.067601  1
2016 Mleczko MJ, Xu RL, Okabe K, Kuo HH, Fisher IR, Wong HP, Nishi Y, Pop E. High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2. Acs Nano. PMID 27434729 DOI: 10.1021/Acsnano.6B02368  0.01
2016 Chen Z, Li H, Chen HY, Chen B, Liu R, Huang P, Zhang F, Jiang Z, Ye H, Bin Gao, Liu L, Liu X, Kang J, Wong HP, Yu S. Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array. Nanotechnology. 27: 215204. PMID 27094841 DOI: 10.1088/0957-4484/27/21/215204  1
2016 Li L, Engel M, Farmer DB, Han SJ, Wong HP. High Performance P-type Black Phosphorus Transistor with Scandium Contact. Acs Nano. PMID 27023751 DOI: 10.1021/Acsnano.6B01008  1
2016 Park RS, Shulaker MM, Hills G, Suriyasena Liyanage L, Lee S, Tang A, Mitra PS, Wong HP. Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution. Acs Nano. PMID 27002483 DOI: 10.1021/Acsnano.6B00792  1
2016 Lei T, Chen X, Pitner G, Wong HP, Bao Z. Removable and Recyclable Conjugated Polymers for Highly Selective and High-Yield Dispersion and Release of Low-Cost Carbon Nanotubes. Journal of the American Chemical Society. PMID 26731376 DOI: 10.1021/Jacs.5B12797  1
2016 Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HSP, Javey A. MoS2 transistors with 1-nanometer gate lengths Science. 354: 99-102. DOI: 10.1126/science.aah4698  1
2016 Sharma AA, Kesim Y, Shulaker M, Kuo C, Augustine C, Wong HSP, Mitra S, Skowronski M, Bain JA, Weldon JA. Low-power, high-performance S-NDR oscillators for stereo (3D) vision using directly-coupled oscillator networks Digest of Technical Papers - Symposium On Vlsi Technology. 2016. DOI: 10.1109/VLSIT.2016.7573438  1
2016 Jiang Z, Wu Y, Yu S, Yang L, Song K, Karim Z, Wong HSP. A Compact model for metal-oxide resistive random access memory with experiment verification Ieee Transactions On Electron Devices. 63: 1884-1892. DOI: 10.1109/TED.2016.2545412  1
2016 Gielen G, Rethy JV, Marin J, Shulaker MM, Hills G, Wong H-P, Mitra S. Time-Based Sensor Interface Circuits in CMOS and Carbon Nanotube Technologies Ieee Transactions On Circuits and Systems. 63: 577-586. DOI: 10.1109/Tcsi.2016.2525098  1
2016 Wu TF, Ganesan K, Hu YA, Wong HSP, Wong S, Mitra S. TPAD: Hardware trojan prevention and detection for trusted integrated circuits Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 35: 521-534. DOI: 10.1109/Tcad.2015.2474373  1
2016 Shulaker M, Wong HSP, Mitra S. Computing with Carbon Nanotubes Ieee Spectrum. 53. DOI: 10.1109/Mspec.2016.7498155  1
2016 Eryilmaz SB, Joshi S, Neftci E, Wan W, Cauwenberghs G, Wong HSP. Neuromorphic architectures with electronic synapses Proceedings - International Symposium On Quality Electronic Design, Isqed. 2016: 118-123. DOI: 10.1109/ISQED.2016.7479186  1
2016 Shulaker MM, Hills G, Wu TF, Bao Z, Wong HSP, Mitra S. Efficient metallic carbon nanotube removal for highly-scaled technologies Technical Digest - International Electron Devices Meeting, Iedm. 2016: 32.4.1-32.4.4. DOI: 10.1109/IEDM.2015.7409815  1
2015 Tian H, Zhao H, Wang XF, Xie QY, Chen HY, Mohammad MA, Li C, Mi WT, Bie Z, Yeh CH, Yang Y, Wong HP, Chiu PW, Ren TL. In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device. Advanced Materials (Deerfield Beach, Fla.). PMID 26500160 DOI: 10.1002/Adma.201503125  1
2015 Feng Y, Zhang K, Wang F, Liu Z, Fang M, Cao R, Miao Y, Yang ZC, Mi W, Han Y, Song Z, Wong HP. Synthesis of Large Area Highly Crystalline Monolayer Molybdenum Disulfide with Tunable Grain Size in H2 Atmosphere. Acs Applied Materials & Interfaces. PMID 26393528 DOI: 10.1021/acsami.5b07038  1
2015 Ahn C, Fong SW, Kim Y, Lee S, Sood A, Neumann CM, Asheghi M, Goodson KE, Pop E, Wong HP. Energy-Efficient Phase-Change Memory with Graphene as Thermal Barrier. Nano Letters. PMID 26308280 DOI: 10.1021/Acs.Nanolett.5B02661  1
2015 Li L, Chen X, Wang CH, Cao J, Lee S, Tang A, Ahn C, Roy SS, Arnold MS, Wong HP. Vertical and Lateral Cu Transport through Graphene Layers. Acs Nano. PMID 26222951 DOI: 10.1021/Acsnano.5B03038  1
2015 Park S, Pitner G, Giri G, Koo JH, Park J, Kim K, Wang H, Sinclair R, Wong HS, Bao Z. Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors. Advanced Materials (Deerfield Beach, Fla.). 27: 2656-62. PMID 25788393 DOI: 10.1002/Adma.201405289  1
2015 Wong HS, Salahuddin S. Memory leads the way to better computing. Nature Nanotechnology. 10: 191-4. PMID 25740127 DOI: 10.1038/nnano.2015.29  1
2015 Yi H, Bao XY, Tiberio R, Wong HS. A general design strategy for block copolymer directed self-assembly patterning of integrated circuits contact holes using an alphabet approach. Nano Letters. 15: 805-12. PMID 25551471 DOI: 10.1021/nl502172m  0.01
2015 Li L, Chen X, Wang CH, Lee S, Cao J, Roy SS, Arnold MS, Wong HSP. Cu diffusion barrier: Graphene benchmarked to TaN for ultimate interconnect scaling Digest of Technical Papers - Symposium On Vlsi Technology. 2015: T122-T123. DOI: 10.1109/VLSIT.2015.7223713  1
2015 Sharma AA, Jackson TC, Schulaker M, Kuo C, Augustine C, Bain JA, Wong HSP, Mitra S, Pileggi LT, Weldon JA. High performance, integrated 1T1R oxide-based oscillator: Stack engineering for low-power operation in neural network applications Digest of Technical Papers - Symposium On Vlsi Technology. 2015: T186-T187. DOI: 10.1109/VLSIT.2015.7223672  1
2015 Li H, Gao B, Chen HY, Chen Z, Huang P, Liu R, Zhao L, Jiang Z, Liu L, Liu X, Yu S, Kang J, Nishi Y, Wong HSP. 3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines Ieee Transactions On Electron Devices. DOI: 10.1109/TED.2015.2468602  1
2015 Lee CS, Pop E, Franklin AD, Haensch W, Wong HSP. A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements Ieee Transactions On Electron Devices. 62: 3061-3069. DOI: 10.1109/Ted.2015.2457453  1
2015 Lee CS, Pop E, Franklin AD, Haensch W, Wong HSP. A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part II: Extrinsic Elements, Performance Assessment, and Design Optimization Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2457424  1
2015 Ahn C, Jiang Z, Lee CS, Chen HY, Liang J, Liyanage LS, Philip Wong HS. 1D selection device using carbon nanotube FETs for high-density cross-point memory arrays Ieee Transactions On Electron Devices. 62: 2197-2204. DOI: 10.1109/TED.2015.2433956  1
2015 Hills G, Zhang J, Shulaker MM, Wei H, Lee CS, Balasingam A, Wong HSP, Mitra S. Rapid Co-Optimization of Processing and Circuit Design to Overcome Carbon Nanotube Variations Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 34: 1082-1095. DOI: 10.1109/Tcad.2015.2415492  1
2015 Mitra S, Wong HSP, Wong S. The Trojan-proof chip Ieee Spectrum. 52: 46-51. DOI: 10.1109/Mspec.2015.7024511  1
2015 Jiang Z, Huang P, Zhao L, Kvatinsky S, Yu S, Liu X, Kang J, Nishi Y, Wong HSP. Performance Prediction of Large-Scale 1S1R Resistive Memory Array Using Machine Learning 2015 Ieee 7th International Memory Workshop, Imw 2015. DOI: 10.1109/IMW.2015.7150302  1
2015 Shulaker MM, Wu TF, Pal A, Zhao L, Nishi Y, Saraswat K, Wong HSP, Mitra S. Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs Technical Digest - International Electron Devices Meeting, Iedm. 2015: 27.4.1-27.4.4. DOI: 10.1109/IEDM.2014.7047120  1
2015 Zhao L, Jiang Z, Chen HY, Sohn J, Okabe K, Magyari-Köpe B, Wong HSP, Nishi Y. Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration Technical Digest - International Electron Devices Meeting, Iedm. 2015: 6.6.1-6.6.4. DOI: 10.1109/IEDM.2014.7046998  1
2015 Sohn J, Lee S, Jiang Z, Chen HY, Wong HSP. Atomically thin graphene plane electrode for 3D RRAM Technical Digest - International Electron Devices Meeting, Iedm. 2015: 5.3.1-5.3.4. DOI: 10.1109/IEDM.2014.7046988  1
2015 Kang JF, Gao B, Huang P, Liu LF, Liu XY, Yu HY, Yu S, Wong HSP. RRAM based synaptic devices for neuromorphic visual systems International Conference On Digital Signal Processing, Dsp. 2015: 1219-1222. DOI: 10.1109/ICDSP.2015.7252074  1
2014 Chen LY, Tee BC, Chortos AL, Schwartz G, Tse V, Lipomi DJ, Wong HS, McConnell MV, Bao Z. Continuous wireless pressure monitoring and mapping with ultra-small passive sensors for health monitoring and critical care. Nature Communications. 5: 5028. PMID 25284074 DOI: 10.1038/Ncomms6028  1
2014 Eryilmaz SB, Kuzum D, Jeyasingh R, Kim S, BrightSky M, Lam C, Wong HS. Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array. Frontiers in Neuroscience. 8: 205. PMID 25100936 DOI: 10.3389/fnins.2014.00205  0.01
2014 Gao B, Bi Y, Chen HY, Liu R, Huang P, Chen B, Liu L, Liu X, Yu S, Wong HS, Kang J. Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems. Acs Nano. 8: 6998-7004. PMID 24884237 DOI: 10.1021/nn501824r  1
2014 Tian H, Chen HY, Ren TL, Li C, Xue QT, Mohammad MA, Wu C, Yang Y, Wong HS. Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology. Nano Letters. 14: 3214-9. PMID 24801736 DOI: 10.1021/Nl5005916  1
2014 Jeyasingh R, Fong SW, Lee J, Li Z, Chang KW, Mantegazza D, Asheghi M, Goodson KE, Wong HS. Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase. Nano Letters. 14: 3419-26. PMID 24798660 DOI: 10.1021/Nl500940Z  1
2014 Zhao L, Chen HY, Wu SC, Jiang Z, Yu S, Hou TH, Wong HS, Nishi Y. Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations. Nanoscale. 6: 5698-702. PMID 24769626 DOI: 10.1039/C4Nr00500G  1
2014 Shulaker MM, Van Rethy J, Wu TF, Liyanage LS, Wei H, Li Z, Pop E, Gielen G, Wong HS, Mitra S. Carbon nanotube circuit integration up to sub-20 nm channel lengths. Acs Nano. 8: 3434-43. PMID 24654597 DOI: 10.1021/Nn406301R  1
2014 Suriyasena Liyanage L, Xu X, Pitner G, Bao Z, Wong HS. VLSI-compatible carbon nanotube doping technique with low work-function metal oxides. Nano Letters. 14: 1884-90. PMID 24628497 DOI: 10.1021/Nl404654J  1
2014 Bobba S, Gaillardon PE, Wong HSP, Mitra S, Zhang J, De Micheli G. System level benchmarking with yield-enhanced standard cell library for carbon nanotube vlsi circuits Acm Journal On Emerging Technologies in Computing Systems. 10. DOI: 10.1145/2600073  1
2014 Chen HY, Gao B, Li H, Liu R, Huang P, Chen Z, Chen B, Zhang F, Zhao L, Jiang Z, Liu L, Liu X, Kang J, Yu S, Nishi Y, ... Wong HSP, et al. Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays Digest of Technical Papers - Symposium On Vlsi Technology. DOI: 10.1109/VLSIT.2014.6894434  1
2014 Ahn C, Jiang Z, Lee CS, Chen HY, Liang J, Liyanage LS, Wong HSP. A 1TnR array architecture using a one-dimensional selection device Digest of Technical Papers - Symposium On Vlsi Technology. DOI: 10.1109/VLSIT.2014.6894404  1
2014 Liu R, Chen HY, Li H, Huang P, Zhao L, Chen Z, Zhang F, Chen B, Liu L, Liu X, Gao B, Yu S, Nishi Y, Wong HSP, Kang J. Impact of pulse rise time on programming of cross-point RRAM arrays Proceedings of Technical Program - 2014 International Symposium On Vlsi Technology, Systems and Application, Vlsi-Tsa 2014. DOI: 10.1109/VLSI-TSA.2014.6839689  1
2014 Ahn C, Kim S, Gokmen T, Dial O, Ritter M, Wong HSP. Temperature-dependent studies of the electrical properties and the conduction mechanism of HfOx-based RRAM Proceedings of Technical Program - 2014 International Symposium On Vlsi Technology, Systems and Application, Vlsi-Tsa 2014. DOI: 10.1109/VLSI-TSA.2014.6839685  1
2014 Zhao L, Chen HY, Wu SC, Jiang Z, Yu S, Hou TH, Wong HSP, Nishi Y. Improved multi-level control of RRAM using pulse-train programming Proceedings of Technical Program - 2014 International Symposium On Vlsi Technology, Systems and Application, Vlsi-Tsa 2014. DOI: 10.1109/VLSI-TSA.2014.6839673  1
2014 Liyanage LS, Pitner G, Xu X, Wong HSP. N-type doping of carbon nanotube transistors using yttrium oxide (Y 2Ox) Proceedings of Technical Program - 2014 International Symposium On Vlsi Technology, Systems and Application, Vlsi-Tsa 2014. DOI: 10.1109/VLSI-TSA.2014.6839667  1
2014 Tang WM, Aboudi U, Provine J, Howe RT, Wong HSP. Improved performance of bottom-contact organic thin-film transistor using Al doped HfO2 gate dielectric Ieee Transactions On Electron Devices. 61: 2398-2403. DOI: 10.1109/Ted.2014.2325042  1
2014 Jiang Z, Yu S, Wu Y, Engel JH, Guan X, Wong HSP. Verilog-A compact model for oxide-based resistive random access memory (RRAM) International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 41-44. DOI: 10.1109/SISPAD.2014.6931558  1
2014 Ebrahimi MS, Hills G, Sabry MM, Shulaker MM, Wei H, Wu TF, Mitra S, Wong HSP. Monolithic 3D integration advances and challenges: From technology to system levels 2014 Soi-3d-Subthreshold Microelectronics Technology Unified Conference, S3s 2014. DOI: 10.1109/S3S.2014.7028198  1
2014 Fang Z, Wang XP, Sohn J, Weng BB, Zhang ZP, Chen ZX, Tang YZ, Lo GQ, Provine J, Wong SS, Wong HSP, Kwong DL. The role of ti capping layer in HfOx-Based RRAM Devices Ieee Electron Device Letters. 35: 912-914. DOI: 10.1109/Led.2014.2334311  1
2014 Shulaker MM, Rethy JV, Hills G, Wei H, Chen H, Gielen G, Wong H-P, Mitra S. Sensor-to-Digital Interface Built Entirely With Carbon Nanotube FETs Ieee Journal of Solid-State Circuits. 49: 190-201. DOI: 10.1109/Jssc.2013.2282092  1
2014 Sood A, Eryilmaz SB, Jeyasingh R, Cho J, Asheghi M, Wong HSP, Goodson KE. Thermal characterization of nanostructured superlattices of TiN/TaN: Applications as electrodes in phase change memory Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference. 765-770. DOI: 10.1109/ITHERM.2014.6892358  1
2014 Fong SW, Jeyasingh R, Asheghi M, Goodson KE, Wong HSP. Characterization of phase-change layer thermal properties using a micro-thermal stage Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference. 744-749. DOI: 10.1109/ITHERM.2014.6892355  1
2013 Yu S, Gao B, Fang Z, Yu H, Kang J, Wong HS. Stochastic learning in oxide binary synaptic device for neuromorphic computing. Frontiers in Neuroscience. 7: 186. PMID 24198752 DOI: 10.3389/fnins.2013.00186  1
2013 Chen HY, Yu S, Gao B, Liu R, Jiang Z, Deng Y, Chen B, Kang J, Wong HS. Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory. Nanotechnology. 24: 465201. PMID 24148997 DOI: 10.1088/0957-4484/24/46/465201  1
2013 Shulaker MM, Hills G, Patil N, Wei H, Chen HY, Wong HS, Mitra S. Carbon nanotube computer. Nature. 501: 526-30. PMID 24067711 DOI: 10.1038/Nature12502  1
2013 Kuzum D, Yu S, Wong HS. Synaptic electronics: materials, devices and applications. Nanotechnology. 24: 382001. PMID 23999572 DOI: 10.1088/0957-4484/24/38/382001  0.01
2013 Chen LY, Parizi KB, Kosuge H, Milaninia KM, McConnell MV, Wong HS, Poon AS. Mass fabrication and delivery of 3D multilayer μTags into living cells. Scientific Reports. 3: 2295. PMID 23887586 DOI: 10.1038/srep02295  1
2013 Yu S, Chen HY, Gao B, Kang J, Wong HS. HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. Acs Nano. 7: 2320-5. PMID 23411406 DOI: 10.1021/nn305510u  1
2013 Yu S, Gao B, Fang Z, Yu H, Kang J, Wong HS. A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation. Advanced Materials (Deerfield Beach, Fla.). 25: 1774-9. PMID 23355110 DOI: 10.1002/adma.201203680  1
2013 Tian H, Chen HY, Gao B, Yu S, Liang J, Yang Y, Xie D, Kang J, Ren TL, Zhang Y, Wong HS. Monitoring oxygen movement by Raman spectroscopy of resistive random access memory with a graphene-inserted electrode. Nano Letters. 13: 651-7. PMID 23278753 DOI: 10.1021/nl304246d  1
2013 Parker JM, Chen X, Liyanage L, Tang A, Wong HSP. Carbon 1D/2D nanoelectronics: Advances in synthesis and integration Ecs Transactions. 53: 27-38. DOI: 10.1149/05301.0027ecst  1
2013 Harrison KL, Lee WS, Shavezipur K, Provine J, Mitra S, Wong HSP, Howe RT. Dual-beam, six-terminal nanoelectromechanical relays 2013 Transducers and Eurosensors Xxvii: the 17th International Conference On Solid-State Sensors, Actuators and Microsystems, Transducers and Eurosensors 2013. 1436-1439. DOI: 10.1109/Transducers.2013.6627049  1
2013 Lee D, Lee WS, Chen C, Fallah F, Provine J, Chong S, Watkins J, Howe RT, Wong HSP, Mitra S. Combinational logic design using six-terminal NEM relays Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 32: 653-666. DOI: 10.1109/Tcad.2012.2232707  1
2013 Shavezipur M, Lee WS, Harrison KL, Provine J, Mitra S, Wong HSP, Howe RT. Laterally actuated nanoelectromechanical relays with compliant, low resistance contact Proceedings of the Ieee International Conference On Micro Electro Mechanical Systems (Mems). 520-523. DOI: 10.1109/MEMSYS.2013.6474293  1
2013 Zhang Z, Wu Y, Wong H-P, Wong SS. Nanometer-Scale ${\rm HfO}_{x}$ RRAM Ieee Electron Device Letters. 34: 1005-1007. DOI: 10.1109/Led.2013.2265404  1
2013 Parsa R, Lee WS, Shavezipur M, Provine J, Maboudian R, Mitra S, Wong HSP, Howe RT. Laterally actuated platinum-coated polysilicon NEM relays Journal of Microelectromechanical Systems. 22: 768-778. DOI: 10.1109/Jmems.2013.2244779  1
2013 Liyanage LS, Chen X, Wei H, Chen HY, Mitra S, Wong HSP. Reliability of graphene interconnects and n-type doping of carbon nanotube transistors Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2013.6532045  1
2013 Lee S, Tang A, McVittie JP, Wong HSP. NEM relays using 2-dimensional nanomaterials for low energy contacts 2013 3rd Berkeley Symposium On Energy Efficient Electronic Systems, E3s 2013 - Proceedings. DOI: 10.1109/E3S.2013.6705883  1
2012 Che Y, Wang C, Liu J, Liu B, Lin X, Parker J, Beasley C, Wong HS, Zhou C. Selective synthesis and device applications of semiconducting single-walled carbon nanotubes using isopropyl alcohol as feedstock. Acs Nano. 6: 7454-62. PMID 22849386 DOI: 10.1021/Nn302720N  0.01
2012 Caldwell MA, Jeyasingh RG, Wong HS, Milliron DJ. Nanoscale phase change memory materials. Nanoscale. 4: 4382-92. PMID 22740071 DOI: 10.1039/C2Nr30541K  1
2012 Yi H, Bao XY, Zhang J, Bencher C, Chang LW, Chen X, Tiberio R, Conway J, Dai H, Chen Y, Mitra S, Wong HS. Flexible control of block copolymer directed self-assembly using small, topographical templates: potential lithography solution for integrated circuit contact hole patterning. Advanced Materials (Deerfield Beach, Fla.). 24: 3107-14, 3082. PMID 22550028 DOI: 10.1002/Adma.201200265  1
2012 Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HS, Haensch W. Variability in carbon nanotube transistors: improving device-to-device consistency. Acs Nano. 6: 1109-15. PMID 22272749 DOI: 10.1021/Nn203516Z  1
2012 Liyanage LS, Lee H, Patil N, Park S, Mitra S, Bao Z, Wong HS. Wafer-scale fabrication and characterization of thin-film transistors with polythiophene-sorted semiconducting carbon nanotube networks. Acs Nano. 6: 451-8. PMID 22148677 DOI: 10.1021/Nn203771U  1
2012 Kuzum D, Jeyasingh RG, Lee B, Wong HS. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Letters. 12: 2179-86. PMID 21668029 DOI: 10.1021/nl201040y  0.01
2012 Ahn C, Lee B, Jeyasingh RGD, Asheghi M, Hurkx F, Goodson KE, Wong HSP. Effect of resistance drift on the activation energy for crystallization in phase change memory Japanese Journal of Applied Physics. 51. DOI: 10.7567/Ssdm.2011.F-6-2  1
2012 Chen HY, Lin A, Liyanage LS, Beasley C, Patil N, Wei H, Mitra S, Wong HSP. Single-tube characterization methodology for experimental and analytical evaluation of carbon nanotube synthesis Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.04Db02  1
2012 Yi H, Bao X, Zhang J, Tiberio R, Conway J, Chang L, Mitra S, Wong H-P. Contact-hole patterning for random logic circuits using block copolymer directed self-assembly Proceedings of Spie. 8323. DOI: 10.1117/12.912804  1
2012 Li Z, Jeyasingh RGD, Lee J, Asheghi M, Wong HSP, Goodson KE. Electrothermal modeling and design strategies for multibit phase-change memory Ieee Transactions On Electron Devices. 59: 3561-3567. DOI: 10.1109/TED.2012.2219311  1
2012 Li Z, Jeyasingh RGD, Lee J, Asheghi M, Wong HSP, Goodson KE. Electrothermal modeling and design strategies for multibit phase change memory Asme 2012 3rd International Conference On Micro/Nanoscale Heat and Mass Transfer, Mnhmt 2012. 777-783. DOI: 10.1109/Ted.2012.2219311  1
2012 Chong S, Lee B, Mitra S, Howe RT, Wong HSP. Integration of nanoelectromechanical relays with silicon nMOS Ieee Transactions On Electron Devices. 59: 255-258. DOI: 10.1109/Ted.2011.2172946  1
2012 Chai Y, Hazeghi A, Takei K, Chen HY, Chan PCH, Javey A, Wong HSP. Low-resistance electrical contact to carbon nanotubes with graphitic interfacial layer Ieee Transactions On Electron Devices. 59: 12-19. DOI: 10.1109/Ted.2011.2170216  1
2012 Parizi KB, Yeh AJ, Poon ASY, Wong HSP. Exceeding Nernst limit (59mV/pH): CMOS-based pH sensor for autonomous applications Technical Digest - International Electron Devices Meeting, Iedm. 24.7.1-24.7.4. DOI: 10.1109/IEDM.2012.6479098  1
2012 Tang WM, Aboudi U, Provine J, Howe RT, Wong HSP. Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric 2012 Ieee International Conference On Electron Devices and Solid State Circuit, Edssc 2012. DOI: 10.1109/EDSSC.2012.6482866  1
2012 Jeyasingh R, Liang J, Caldwell MA, Kuzum D, Wong HSP. Phase change memory: Scaling and applications Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330621  1
2012 Yi H, Bao X, Zhang J, Bencher C, Chang L, Chen X, Tiberio R, Conway J, Dai H, Chen Y, Mitra S, Wong H-P. Template Patterning: Flexible Control of Block Copolymer Directed Self-Assembly using Small, Topographical Templates: Potential Lithography Solution for Integrated Circuit Contact Hole Patterning (Adv. Mater. 23/2012) Advanced Materials. 24: 3082-3082. DOI: 10.1002/Adma.201290134  1
2012 Chen C, Lee WS, Parsa R, Chong S, Provine J, Watt J, Howe RT, Wong HSP, Mitra S. Nano-Electro-Mechanical relays for FPGA routing: Experimental demonstration and a design technique Proceedings -Design, Automation and Test in Europe, Date. 1361-1366.  1
2012 Lee WS, Cloud AN, Provine J, Tayebi N, Parsa R, Mitra S, Wong HSP, Abelson JR, Howe RT. CVD hafnium diboride as a contact material for nanoelectromechanical switches Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop. 437-440.  1
2011 Hazeghi A, Sulpizio JA, Diankov G, Goldhaber-Gordon D, Wong HS. An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements. The Review of Scientific Instruments. 82: 053904. PMID 21639515 DOI: 10.1063/1.3582068  1
2011 Shulaker MM, Wei H, Patil N, Provine J, Chen HY, Wong HS, Mitra S. Linear increases in carbon nanotube density through multiple transfer technique. Nano Letters. 11: 1881-6. PMID 21469727 DOI: 10.1021/Nl200063X  1
2011 Meister S, Kim S, Cha JJ, Wong HS, Cui Y. In situ transmission electron microscopy observation of nanostructural changes in phase-change memory. Acs Nano. 5: 2742-8. PMID 21425849 DOI: 10.1021/Nn1031356  0.01
2011 Chen HY, Lin A, Liyanage LS, Beasley C, Patil N, Wei H, Mitra S, Wong HSP. STC: Single-Tube Characterization Methodology for Experimental and Analytical Evaluation of Carbon Nanotube Synthesis The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.C-1-4  1
2011 Chen HY, Patil N, Lin A, Wei L, Beasley C, Zhang J, Chen X, Wei H, Liyanage LS, Shulaker MM, Mitra S, Wong HSP. Carbon electronics - From material synthesis to circuit demonstration International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 8-9. DOI: 10.1109/VTSA.2011.5872209  1
2011 Lee WS, Chong S, Parsa R, Provine J, Lee D, Mitra S, Wong HSP, Howe RT. Dual sidewall lateral nanoelectromechanical relays with beam isolation 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, Transducers'11. 2606-2609. DOI: 10.1109/TRANSDUCERS.2011.5969835  1
2011 Lee D, Mitra S, Howe RT, Wong HSP. Multi-spacer technique for low-voltage, high-aspect-ratio lateral electrostatic actuators 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, Transducers'11. 2602-2605. DOI: 10.1109/TRANSDUCERS.2011.5969833  1
2011 Patil N, Lin A, Zhang J, Wei H, Anderson K, Wong H-P, Mitra S. Scalable Carbon Nanotube Computational and Storage Circuits Immune to Metallic and Mispositioned Carbon Nanotubes Ieee Transactions On Nanotechnology. 10: 744-750. DOI: 10.1109/Tnano.2010.2076323  1
2011 Wei L, Frank DJ, Chang L, Wong HSP. Noniterative compact modeling for intrinsic carbon-nanotube FETs: Quantum capacitance and ballistic transport Ieee Transactions On Electron Devices. 58: 2456-2465. DOI: 10.1109/Ted.2011.2153858  1
2011 Kuzum D, Park JH, Krishnamohan T, Wong HSP, Saraswat KC. The effect of donor/acceptor nature of interface traps on Ge MOSFET characteristics Ieee Transactions On Electron Devices. 58: 1015-1022. DOI: 10.1109/Ted.2011.2120613  1
2011 Kim S, Lee B, Asheghi M, Hurkx F, Reifenberg JP, Goodson KE, Wong HSP. Resistance and threshold switching voltage drift behavior in phase-change memory and their temperature dependence at microsecond time scales studied using a micro-thermal stage Ieee Transactions On Electron Devices. 58: 584-592. DOI: 10.1109/Ted.2010.2095502  1
2011 Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. High-mobility Ge N-MOSFETs and mobility degradation mechanisms Ieee Transactions On Electron Devices. 58: 59-66. DOI: 10.1109/Ted.2010.2088124  1
2011 Shen X, Chong S, Lee D, Parsa R, Howe RT, Wong HSP. 2D analytical model for the study of NEM relay device scaling International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 243-246. DOI: 10.1109/SISPAD.2011.6035070  1
2011 Parsa R, Shavezipur M, Lee WS, Chong S, Lee D, Wong HSP, Maboudian R, Howe RT. Nanoelectromechanical relays with decoupled electrode and suspension Proceedings of the Ieee International Conference On Micro Electro Mechanical Systems (Mems). 1361-1364. DOI: 10.1109/MEMSYS.2011.5734687  1
2011 Li Z, Lee J, Reifenberg JP, Asheghi M, Jeyasingh RGD, Wong HSP, Goodson KE. Grain boundaries, phase impurities, and anisotropic thermal conduction in phase-change memory Ieee Electron Device Letters. 32: 961-963. DOI: 10.1109/Led.2011.2150193  1
2011 Lee J, Kim S, Jeyasingh R, Asheghi M, Wong HSP, Goodson KE. Microthermal stage for electrothermal characterization of phase-change memory Ieee Electron Device Letters. 32: 952-954. DOI: 10.1109/Led.2011.2144952  1
2011 Chong S, Lee B, Parizi KB, Provine J, Mitra S, Howe RT, Wong HSP. Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit Technical Digest - International Electron Devices Meeting, Iedm. 30.5.1-30.5.4. DOI: 10.1109/IEDM.2011.6131645  1
2011 Wong HSP, Mitra S, Akinwande D, Beasley C, Chai Y, Chen HY, Chen X, Close G, Deng J, Hazeghi A, Liang J, Lin A, Liyanage LS, Luo J, Parker J, et al. Carbon nanotube electronics - Materials, devices, circuits, design, modeling, and performance projection Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2011.6131594  1
2011 Jeyasingh RGD, Caldwell MA, Milliron DJ, Wong HSP. First demonstration of phase change memory device using solution processed GeTe nanoparticles European Solid-State Device Research Conference. 99-102. DOI: 10.1109/ESSDERC.2011.6044225  1
2011 Wang RY, Caldwell MA, Jeyasingh RGD, Aloni S, Shelby RM, Wong HSP, Milliron DJ. Electronic and optical switching of solution-phase deposited SnSe 2 phase change memory material Journal of Applied Physics. 109. DOI: 10.1063/1.3587187  1
2010 Yu S, Liang J, Wu Y, Wong HS. Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays. Nanotechnology. 21: 465202. PMID 20972315 DOI: 10.1088/0957-4484/21/46/465202  0.01
2010 Chen C, Parsa R, Patil N, Chong S, Akarvardar K, Provine J, Lewis D, Watt J, Howe RT, Wong HSP, Mitra S. Efficient FPGAs using nanoelectromechanical relays Acm/Sigda International Symposium On Field Programmable Gate Arrays - Fpga. 273-282. DOI: 10.1145/1723112.1723158  1
2010 Chen X, Akinwande D, Lee KJ, Close GF, Yasuda S, Paul BC, Fujita S, Kong J, Wong HSP. Fully integrated graphene and carbon nanotube interconnects for gigahertz high-speed CMOS electronics Ieee Transactions On Electron Devices. 57: 3137-3143. DOI: 10.1109/Ted.2010.2069562  1
2010 Lin A, Zhang J, Patil N, Wei H, Mitra S, Wong H-P. ACCNT: A Metallic-CNT-Tolerant Design Methodology for Carbon Nanotube VLSI: Analyses and Design Guidelines Ieee Transactions On Electron Devices. 57: 2284-2295. DOI: 10.1109/Ted.2010.2053207  1
2010 Bao XY, Pinaud BA, Parker J, Aloni S, Jaramillo TF, Wong HSP. Monolithic III-V nanowire PV for photoelectrochemical hydrogen generation Conference Record of the Ieee Photovoltaic Specialists Conference. 1793-1796. DOI: 10.1109/PVSC.2010.5615905  1
2010 Lee D, Lee WS, Mitra S, Howe RT, Wong HSP. Four-mask process based on spacer technology for scaled-down lateral NEM electrostatic actuators 2010 International Conference On Optical Mems and Nanophotonics, Optical Mems and Nanophotonics 2010. 35-36. DOI: 10.1109/OMEMS.2010.5672196  1
2010 Lee D, Lee WS, Provine J, Lee JO, Yoon JB, Howe RT, Mitra S, Wong HSP. Titanium nitride sidewall stringer process for lateral nanoelectromechanical relays Proceedings of the Ieee International Conference On Micro Electro Mechanical Systems (Mems). 456-459. DOI: 10.1109/MEMSYS.2010.5442466  1
2010 Reifenberg JP, Chang KW, Panzer MA, Kim S, Rowlette JA, Asheghi M, Wong HSP, Goodson KE. Thermal boundary resistance measurements for phase-change memory devices Ieee Electron Device Letters. 31: 56-58. DOI: 10.1109/Led.2009.2035139  1
2010 Wong HSP, Raoux S, Kim S, Liang J, Reifenberg JP, Rajendran B, Asheghi M, Goodson KE. Phase change memory Proceedings of the Ieee. 98: 2201-2227. DOI: 10.1109/JPROC.2010.2070050  1
2010 Lee J, Reifenberg JP, Bozorg-Grayeli E, Hom L, Li Z, Kim S, Asheghi M, Wong HSP, Goodson KE. Decoupled thermal resistances of phase change material and their impact on PCM devices 2010 12th Ieee Intersociety Conference On Thermal and Thermomechanical Phenomena in Electronic Systems, Itherm 2010. DOI: 10.1109/ITHERM.2010.5501412  1
2010 Caldwell MA, Haynor B, Aloni S, Ogletree DF, Wong HSP, Urban JJ, Milliron DJ. Spectroscopic evidence for exceptional thermal contribution to electron beam-induced fragmentation Journal of Physical Chemistry C. 114: 22064-22068. DOI: 10.1021/Jp1078086  1
2009 Patil N, Deng J, Mitra S, Wong H-P. Circuit-Level Performance Benchmarking and Scalability Analysis of Carbon Nanotube Transistor Circuits Ieee Transactions On Nanotechnology. 8: 37-45. DOI: 10.1109/Tnano.2008.2006903  1
2009 Lin A, Patil N, Wei H, Mitra S, Wong H-P. ACCNT—A Metallic-CNT-Tolerant Design Methodology for Carbon-Nanotube VLSI: Concepts and Experimental Demonstration Ieee Transactions On Electron Devices. 56: 2969-2978. DOI: 10.1109/Ted.2009.2033168  1
2009 Wei L, Deng J, Chang LW, Kim K, Chuang CT, Wong HSP. Selective device structure scaling and parasitics engineering: A way to extend the technology roadmap Ieee Transactions On Electron Devices. 56: 312-320. DOI: 10.1109/TED.2008.2010573  1
2009 Close GF, Yasuda S, Paul BC, Fujita S, Wong HSP. Measurement of subnanosecond delay through multiwall carbon-nanotube local interconnects in a CMOS integrated circuit Ieee Transactions On Electron Devices. 56: 43-49. DOI: 10.1109/Ted.2008.2008682  1
2009 Lee J, Reifenberg JP, Li Z, Hom L, Asheghi M, Kim S, Wong HSP, Goodson KE. Measurement of anisotropy in the thermal conductivity of Ge 2Sb2Te5 films Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, Nvmts 2009. 52-57. DOI: 10.1109/NVMT.2009.5429777  1
2009 Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. Experimental demonstration of high mobility Ge NMOS Technical Digest - International Electron Devices Meeting, Iedm. 19.1.1-19.1.4. DOI: 10.1109/IEDM.2009.5424322  1
2009 Chen X, Lee KJ, Akinwande D, Close GF, Yasuda S, Paul B, Fujita S, Kong J, Wong HSP. High-speed graphene interconnects monolithically integrated with CMOS ring oscillators operating at 1.3GHz Technical Digest - International Electron Devices Meeting, Iedm. 23.6.1-23.6.4. DOI: 10.1109/IEDM.2009.5424293  1
2009 Wei L, Frank DJ, Chang L, Wong HSP. A non-iterative compact model for carbon nanotube FETs incorporating source exhaustion effects Technical Digest - International Electron Devices Meeting, Iedm. 37.7.1-37.7.4. DOI: 10.1109/IEDM.2009.5424281  1
2009 Kobayashi M, Kinoshita A, Saraswat K, Wong H-P, Nishi Y. Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application Journal of Applied Physics. 105: 23702. DOI: 10.1063/1.3065990  1
2009 Chong S, Akarvardar K, Parsa R, Yoon JB, Howe RT, Mitra S, Wong HSP. Nanoelectromechanical (NEM) relays integrated with CMOS SRAM for improved stability and low leakage Ieee/Acm International Conference On Computer-Aided Design, Digest of Technical Papers, Iccad. 478-484.  1
2008 Close GF, Yasuda S, Paul B, Fujita S, Wong HS. A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors. Nano Letters. 8: 706-9. PMID 18269256 DOI: 10.1021/Nl0730965  1
2008 Zhang Y, Raoux S, Krebs D, Krupp LE, Topuria T, Jordan-Sweet J, Caldwell M, Rice P, Milliron DJ, Wong HSP. Crystallization characteristics of phase change nanoparticle arrays fabricated by self-assembly based lithography Materials Research Society Symposium Proceedings. 1072: 138-144. DOI: 10.1557/Proc-1072-G08-05  1
2008 Yi JH, Oh S, Wong HSP. Hole mobility characteristics under electrical stress for surface-channel germanium transistors with high-κ gate stack Japanese Journal of Applied Physics. 47: 2544-2547. DOI: 10.1143/JJAP.47.2544  1
2008 Akinwande D, Yasuda S, Paul B, Fujita S, Close G, Wong H-P. Monolithic Integration of CMOS VLSI and Carbon Nanotubes for Hybrid Nanotechnology Applications Ieee Transactions On Nanotechnology. 7: 636-639. DOI: 10.1109/Tnano.2008.2003438  1
2008 Kim SB, Zhang Y, McVittie JP, Jagannathan H, Nishi Y, Wong HSP. Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory - Experimental demonstration and analysis Ieee Transactions On Electron Devices. 55: 2307-2313. DOI: 10.1109/Ted.2008.927631  1
2008 Akarvardar K, Eggimann C, Tsamados D, Chauhan YS, Wan GC, Ionescu AM, Howe RT, Wong HSP. Analytical modeling of the suspended-gate FET and design insights for low-power logic Ieee Transactions On Electron Devices. 55: 48-59. DOI: 10.1109/Ted.2007.911070  1
2008 Patil N, Deng J, Lin A, Wong H-P, Mitra S. Design Methods for Misaligned and Mispositioned Carbon-Nanotube Immune Circuits Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 27: 1725-1736. DOI: 10.1109/Tcad.2008.2003278  1
2008 Close GF, Yasuda S, Paul B, Fujita S, Wong HSP. Sub-ns delay through multi-wall carbon nanotube local interconnects in a CMOS integrated circuit 2008 Ieee International Interconnect Technology Conference, Iitc. 234-236. DOI: 10.1109/IITC.2008.4546976  1
2008 Akinwande D, Liang J, Chong S, Nishi Y, Wong H-P. Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection Journal of Applied Physics. 104: 124514. DOI: 10.1063/1.3050345  1
2008 Zhang Y, Raoux S, Krebs D, Krupp LE, Topuria T, Caldwell MA, Milliron DJ, Kellock A, Rice PM, Jordan-Sweet JL, Wong HSP. Phase change nanodots patterning using a self-assembled polymer lithography and crystallization analysis Journal of Applied Physics. 104. DOI: 10.1063/1.2981070  1
2008 Wang C, Ryu K, Badmaev A, Patil N, Lin A, Mitra S, Wong HSP, Zhou C. Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes Applied Physics Letters. 93. DOI: 10.1063/1.2956677  1
2007 Milliron DJ, Caldwell MA, Wong HS. Synthesis of metal chalcogenide nanodot arrays using block copolymer-derived nanoreactors. Nano Letters. 7: 3504-7. PMID 17900200 DOI: 10.1021/Nl072109B  1
2007 Zhang Y, Kim S, McVittie JP, Jagannathan H, Ratchford JB, Chidsey CED, Nishi Y, Wong HSP. An integrated phase change memory cell with Ge nanowire diode for cross-point memory Digest of Technical Papers - Symposium On Vlsi Technology. 98-99. DOI: 10.1109/VLSIT.2007.4339742  1
2007 Hazeghi A, Krishnamohan T, Wong HSP. Schottky-barrier carbon nanotube field-effect transistor modeling Ieee Transactions On Electron Devices. 54: 439-445. DOI: 10.1109/Ted.2006.890384  1
2007 Kim SB, Wong HSP. Analysis of temperature in phase change memory scaling Ieee Electron Device Letters. 28: 697-699. DOI: 10.1109/LED.2007.901347  1
2007 Deng J, Patil N, Ryu K, Badmaev A, Zhou C, Mitra S, Wong HSP. Carbon nanotube transistor circuits: Circuit-level performance benchmarking and design options for living with imperfections Digest of Technical Papers - Ieee International Solid-State Circuits Conference. DOI: 10.1109/ISSCC.2007.373592  1
2007 Akarvardar K, Elata D, Parsa R, Wan GC, Yoo K, Provine J, Peumans P, Howe RT, Wong HSP. Design considerations for complementary nanoelectromechanical logic gates Technical Digest - International Electron Devices Meeting, Iedm. 299-302. DOI: 10.1109/IEDM.2007.4418930  1
2007 Close GF, Wong HSP. Fabrication and characterization of carbon nanotube interconnects Technical Digest - International Electron Devices Meeting, Iedm. 203-206. DOI: 10.1109/IEDM.2007.4418902  1
2007 Kim D, Krishnamohan T, Smith L, Wong HSP, Saraswat KC. Band to band tunneling study in high mobility materials: III-V, Si, Ge and strained SiGe 65th Drc Device Research Conference. 57-58. DOI: 10.1109/DRC.2007.4373650  1
2007 Reifenberg JP, Panzer MA, Kim S, Gibby AM, Zhang Y, Wong S, Wong HSP, Pop E, Goodson KE. Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films Applied Physics Letters. 91. DOI: 10.1063/1.2784169  1
2007 Zhang Y, Wong HSP, Raoux S, Cha JN, Rettner CT, Krupp LE, Topuria T, Milliron DJ, Rice PM, Jordan-Sweet JL. Phase change nanodot arrays fabricated using a self-assembly diblock copolymer approach Applied Physics Letters. 91. DOI: 10.1063/1.2753699  1
2006 Wong HSP, Deng J, Arash, Hazeghi, Krishnamohan T, Wan GC. Carbon nanotube transistor circuits - Models and tools for design and performance optimization Ieee/Acm International Conference On Computer-Aided Design, Digest of Technical Papers, Iccad. 651-654. DOI: 10.1109/ICCAD.2006.320031  1
2005 Skotnicki T, Hutchby JA, King TJ, Wong HSP, Boeuf F. The end of CMOS scaling: Toward the introduction of new materials and structural changes to improve MOSFET performance Ieee Circuits and Devices Magazine. 21: 16-26. DOI: 10.1109/MCD.2005.1388765  1
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