Shu-Jen Han, Ph.D. - Publications

Affiliations: 
2007 Stanford University, Palo Alto, CA 
Area:
Materials Science, Electrical Engineering, Radiology

77 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any innacuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Oh D, Lara E, Arellano N, Shin YC, Medina P, Kim J, Ta T, Akca E, Ozgit-Akgun C, Demirci G, Kim HC, Han SJ, Maune H, Samant MG. Flat Monolayer Graphene Cathodes for Li-oxygen Micro-batteries. Acs Applied Materials & Interfaces. PMID 30525380 DOI: 10.1021/acsami.8b12718  0.4
2018 Nela L, Tang J, Cao Q, Tulevski GS, Han SJ. Large-Area High-Performance Flexible Pressure Sensor with Carbon Nanotube Active Matrix for Electronic Skin. Nano Letters. PMID 29442518 DOI: 10.1021/acs.nanolett.8b00063  0.36
2017 Zhao H, Dong Z, Tian H, DiMarzi D, Han MG, Zhang L, Yan X, Liu F, Shen L, Han SJ, Cronin S, Wu W, Tice J, Guo J, Wang H. Atomically Thin Femtojoule Memristive Device. Advanced Materials (Deerfield Beach, Fla.). PMID 29067743 DOI: 10.1002/adma.201703232  0.4
2017 Falk AL, Chiu KC, Farmer DB, Cao Q, Tersoff J, Lee YH, Avouris P, Han SJ. Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes. Physical Review Letters. 118: 257401. PMID 28696746 DOI: 10.1103/PhysRevLett.118.257401  0.36
2017 Cao Q, Tersoff J, Farmer DB, Zhu Y, Han SJ. Carbon nanotube transistors scaled to a 40-nanometer footprint. Science (New York, N.Y.). 356: 1369-1372. PMID 28663497 DOI: 10.1126/science.aan2476  0.36
2016 Tian H, Deng B, Chin ML, Yan X, Jiang H, Han SJ, Sun V, Xia Q, Dubey M, Xia F, Wang H. A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device. Acs Nano. PMID 27794601 DOI: 10.1021/acsnano.6b06293  0.4
2016 Guo Q, Pospischil A, Bhuiyan M, Jiang H, Tian H, Farmer DB, Deng B, Li C, Han SJ, Wang H, Xia Q, Ma TP, Mueller T, Xia F. Black Phosphorus Mid-Infrared Photodetectors with High Gain. Nano Letters. PMID 27332146 DOI: 10.1021/acs.nanolett.6b01977  1
2016 Li L, Engel M, Farmer DB, Han SJ, Wong HP. High Performance P-type Black Phosphorus Transistor with Scandium Contact. Acs Nano. PMID 27023751 DOI: 10.1021/acsnano.6b01008  1
2015 Cao Q, Han SJ, Tersoff J, Franklin AD, Zhu Y, Zhang Z, Tulevski GS, Tang J, Haensch W. End-bonded contacts for carbon nanotube transistors with low, size-independent resistance. Science (New York, N.Y.). 350: 68-72. PMID 26430114 DOI: 10.1126/science.aac8006  1
2015 Engel M, Steiner M, Han SJ, Avouris P. Power Dissipation and Electrical Breakdown in Black Phosphorus. Nano Letters. PMID 26348293 DOI: 10.1021/acs.nanolett.5b02622  1
2015 Cao Q, Han SJ, Penumatcha AV, Frank MM, Tulevski GS, Tersoff J, Haensch WE. Origins and characteristics of the threshold voltage variability of quasiballistic single-walled carbon nanotube field-effect transistors. Acs Nano. 9: 1936-44. PMID 25652208 DOI: 10.1021/nn506839p  1
2015 Cao Q, Tersoff J, Han SJ, Penumatcha AV. Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors Physical Review Applied. 4. DOI: 10.1103/PhysRevApplied.4.024022  1
2015 Kumar J, Kuroda MA, Bellus MZ, Han SJ, Chiu HY. Full-range electrical characteristics of WS2 transistors Applied Physics Letters. 106. DOI: 10.1063/1.4916403  1
2014 Wang H, Wang X, Xia F, Wang L, Jiang H, Xia Q, Chin ML, Dubey M, Han SJ. Black phosphorus radio-frequency transistors. Nano Letters. 14: 6424-9. PMID 25347787 DOI: 10.1021/nl5029717  1
2014 Cao Q, Han SJ, Tulevski GS. Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch. Nature Communications. 5: 5071. PMID 25256905 DOI: 10.1038/ncomms6071  1
2014 Tulevski GS, Franklin AD, Frank D, Lobez JM, Cao Q, Park H, Afzali A, Han SJ, Hannon JB, Haensch W. Toward high-performance digital logic technology with carbon nanotubes. Acs Nano. 8: 8730-45. PMID 25144443 DOI: 10.1021/nn503627h  1
2014 Lobez JM, Han SJ, Afzali A, Hannon JB. Surface selective one-step fabrication of carbon nanotube thin films with high density. Acs Nano. 8: 4954-60. PMID 24684374 DOI: 10.1021/nn5009935  1
2014 Han SJ, Garcia AV, Oida S, Jenkins KA, Haensch W. Graphene radio frequency receiver integrated circuit. Nature Communications. 5: 3086. PMID 24477203 DOI: 10.1038/ncomms4086  1
2013 Li N, Oida S, Tulevski GS, Han SJ, Hannon JB, Sadana DK, Chen TC. Efficient and bright organic light-emitting diodes on single-layer graphene electrodes. Nature Communications. 4: 2294. PMID 23934428 DOI: 10.1038/ncomms3294  1
2013 Cao Q, Han SJ. Single-walled carbon nanotubes for high-performance electronics. Nanoscale. 5: 8852-63. PMID 23921893 DOI: 10.1039/c3nr02966b  1
2013 Franklin AD, Koswatta SO, Farmer DB, Smith JT, Gignac L, Breslin CM, Han SJ, Tulevski GS, Miyazoe H, Haensch W, Tersoff J. Carbon nanotube complementary wrap-gate transistors. Nano Letters. 13: 2490-5. PMID 23638708 DOI: 10.1021/nl400544q  1
2013 Cheng CW, Shiu KT, Li N, Han SJ, Shi L, Sadana DK. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Nature Communications. 4: 1577. PMID 23481385 DOI: 10.1038/ncomms2583  1
2013 Cao Q, Han SJ, Tulevski GS, Zhu Y, Lu DD, Haensch W. Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics. Nature Nanotechnology. 8: 180-6. PMID 23353673 DOI: 10.1038/nnano.2012.257  1
2013 Valdes-Garcia A, Xia F, Han SJ, Farmer DB, Dimitrakopoulos C, Oida S, Yan H, Wu Y, Hedges CM, Jenkins KA, Pfeiffer D, Grill A, Avouris P, Haensch W. Graphene technology for RF and THz applications Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697638  1
2013 Han SJ, Oida S, Jenkins KA, Lu D, Zhu Y. Multifinger embedded T-shaped gate graphene RF transistors with high ratio Ieee Electron Device Letters. 34: 1340-1342. DOI: 10.1109/LED.2013.2276038  1
2013 Franklin AD, Oida S, Farmer DB, Smith JT, Han SJ, Breslin CM, Gignac L. Stacking graphene channels in parallel for enhanced performance with the same footprint Ieee Electron Device Letters. 34: 556-558. DOI: 10.1109/LED.2013.2242428  1
2013 Han SJ, Garcia AV, Oida S, Jenkins KA, Haensch W. High-performance multi-stage graphene RF receiver integrated circuit Technical Digest - International Electron Devices Meeting, Iedm. 19.9.1-19.9.3. DOI: 10.1109/IEDM.2013.6724665  1
2013 Han SJ, Oida S, Park H, Hannon JB, Tulevski GS, Haensch W. Carbon nanotube complementary logic based on Erbium contacts and self-assembled high purity solution tubes Technical Digest - International Electron Devices Meeting, Iedm. 19.8.1-19.8.4. DOI: 10.1109/IEDM.2013.6724664  1
2013 Han SJ, Oida S, Jenkins KA, Lu DD. High fMAX/fT ratio in multi-finger embedded T-shaped gate graphene transistors Device Research Conference - Conference Digest, Drc. 33-34. DOI: 10.1109/DRC.2013.6633781  1
2013 Jenkins KA, Farmer DB, Han SJ, Dimitrakopoulos C, Oida S, Valdes-Garcia A. Linearity of graphene field-effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4826932  1
2012 Park H, Afzali A, Han SJ, Tulevski GS, Franklin AD, Tersoff J, Hannon JB, Haensch W. High-density integration of carbon nanotubes via chemical self-assembly. Nature Nanotechnology. 7: 787-91. PMID 23103933 DOI: 10.1038/nnano.2012.189  1
2012 Cao Q, Han SJ, Tulevski GS, Franklin AD, Haensch W. Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes. Acs Nano. 6: 6471-7. PMID 22671996 DOI: 10.1021/nn302185d  1
2012 Zhang FM, Ju WM, Chen JM, Wang SQ, Yu GR, Han SJ. [Characteristics of terrestrial ecosystem primary productivity in East Asia based on remote sensing and process-based model]. Ying Yong Sheng Tai Xue Bao = the Journal of Applied Ecology / Zhongguo Sheng Tai Xue Xue Hui, Zhongguo Ke Xue Yuan Shenyang Ying Yong Sheng Tai Yan Jiu Suo Zhu Ban. 23: 307-18. PMID 22586952  0.68
2012 Han SJ, Reddy D, Carpenter GD, Franklin AD, Jenkins KA. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory. Acs Nano. 6: 5220-6. PMID 22582702 DOI: 10.1021/nn300978c  1
2012 Wu Y, Farmer DB, Zhu W, Han SJ, Dimitrakopoulos CD, Bol AA, Avouris P, Lin YM. Three-terminal graphene negative differential resistance devices. Acs Nano. 6: 2610-6. PMID 22324780 DOI: 10.1021/nn205106z  1
2012 Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HS, Haensch W. Variability in carbon nanotube transistors: improving device-to-device consistency. Acs Nano. 6: 1109-15. PMID 22272749 DOI: 10.1021/nn203516z  1
2012 Franklin AD, Luisier M, Han SJ, Tulevski G, Breslin CM, Gignac L, Lundstrom MS, Haensch W. Sub-10 nm carbon nanotube transistor. Nano Letters. 12: 758-62. PMID 22260387 DOI: 10.1021/nl203701g  1
2012 Franklin AD, Han SJ, Bol AA, Perebeinos V. Double contacts for improved performance of graphene transistors Ieee Electron Device Letters. 33: 17-19. DOI: 10.1109/LED.2011.2173154  1
2011 Cheng XB, Han SJ, Zhang ZH, Zhou YM, Wang SQ, Wang XJ. [Nutrient dynamics in Quercus mongolica leaves at different canopy positions]. Ying Yong Sheng Tai Xue Bao = the Journal of Applied Ecology / Zhongguo Sheng Tai Xue Xue Hui, Zhongguo Ke Xue Yuan Shenyang Ying Yong Sheng Tai Yan Jiu Suo Zhu Ban. 22: 2272-8. PMID 22126035  0.68
2011 Han SJ, Jenkins KA, Valdes Garcia A, Franklin AD, Bol AA, Haensch W. High-frequency graphene voltage amplifier. Nano Letters. 11: 3690-3. PMID 21805988 DOI: 10.1021/nl2016637  1
2011 Lin YM, Valdes-Garcia A, Han SJ, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA. Wafer-scale graphene integrated circuit. Science (New York, N.Y.). 332: 1294-7. PMID 21659599 DOI: 10.1126/science.1204428  1
2011 Gaster RS, Xu L, Han SJ, Wilson RJ, Hall DA, Osterfeld SJ, Yu H, Wang SX. Quantification of protein interactions and solution transport using high-density GMR sensor arrays. Nature Nanotechnology. 6: 314-20. PMID 21478869 DOI: 10.1038/nnano.2011.45  1
2011 Franklin AD, Han SJ, Bol AA, Haensch W. Effects of nanoscale contacts to graphene Ieee Electron Device Letters. 32: 1035-1037. DOI: 10.1109/LED.2011.2158058  1
2011 Han SJ, Chen Z, Bol AA, Sun Y. Channel-length-dependent transport behaviors of graphene field-effect transistors Ieee Electron Device Letters. 32: 812-814. DOI: 10.1109/LED.2011.2131113  1
2011 Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB, Haensch W. High device yield carbon nanotube NFETs for high-performance logic applications Technical Digest - International Electron Devices Meeting, Iedm. 23.3.1-23.3.4. DOI: 10.1109/IEDM.2011.6131596  1
2011 Han SJ, Valdes-Garcia A, Bol AA, Franklin AD, Farmer D, Kratschmer E, Jenkins KA, Haensch W. Graphene technology with inverted-T gate and RF passives on 200 mm platform Technical Digest - International Electron Devices Meeting, Iedm. 2.2.1-2.2.4. DOI: 10.1109/IEDM.2011.6131473  1
2011 Meric I, Dean CR, Han SJ, Wang L, Jenkins KA, Hone J, Shepard KL. High-frequency performance of graphene field effect transistors with saturating IV-characteristics Technical Digest - International Electron Devices Meeting, Iedm. 2.1.1-2.1.4. DOI: 10.1109/IEDM.2011.6131472  1
2011 Kasry A, Afzali AA, Oida S, Han SJ, Menges B, Tulevski GS. Detection of biomolecules via benign surface modification of graphene Chemistry of Materials. 23: 4879-4881. DOI: 10.1021/cm201577k  1
2010 Coxon A, Bready J, Min H, Kaufman S, Leal J, Yu D, Lee TA, Sun JR, Estrada J, Bolon B, McCabe J, Wang L, Rex K, Caenepeel S, Hughes P, ... ... Han SJ, et al. Context-dependent role of angiopoietin-1 inhibition in the suppression of angiogenesis and tumor growth: implications for AMG 386, an angiopoietin-1/2-neutralizing peptibody. Molecular Cancer Therapeutics. 9: 2641-51. PMID 20937592 DOI: 10.1158/1535-7163.MCT-10-0213  0.6
2010 Xu Y, Zhang JH, Han SJ, Wang ST, Wang CG, Wang SQ. [Spatial heterogeneity of soil inorganic nitrogen in a broadleaved-Korean pine mixed forest in Changbai Mountains of northeast China]. Ying Yong Sheng Tai Xue Bao = the Journal of Applied Ecology / Zhongguo Sheng Tai Xue Xue Hui, Zhongguo Ke Xue Yuan Shenyang Ying Yong Sheng Tai Yan Jiu Suo Zhu Ban. 21: 1627-34. PMID 20879516  0.68
2010 Wang ST, Han SJ, Zhang JH, Wang CG, Xu Y, Li XF, Wang SQ. [Woody plant fine root biomass and its spatial distribution in top soil of broad-leaved Korean pine forest in Changbai Mountain]. Ying Yong Sheng Tai Xue Bao = the Journal of Applied Ecology / Zhongguo Sheng Tai Xue Xue Hui, Zhongguo Ke Xue Yuan Shenyang Ying Yong Sheng Tai Yan Jiu Suo Zhu Ban. 21: 583-9. PMID 20560311  0.68
2010 Hall DA, Gaster RS, Lin T, Osterfeld SJ, Han S, Murmann B, Wang SX. GMR biosensor arrays: a system perspective. Biosensors & Bioelectronics. 25: 2051-7. PMID 20207130 DOI: 10.1016/j.bios.2010.01.038  1
2010 Dimitrakopoulos C, Lin YM, Grill A, Farmer DB, Freitag M, Sun Y, Han SJ, Chen Z, Jenkins KA, Zhu Y, Liu Z, McArdle TJ, Ott JA, Wisnieff R, Avouris P. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 985-992. DOI: 10.1116/1.3480961  1
2010 Han SJ, Sun Y, Bol AA, Haensch W, Chen Z. Study of channel length scaling in large-scale graphene FETs Digest of Technical Papers - Symposium On Vlsi Technology. 231-232. DOI: 10.1109/VLSIT.2010.5556239  1
2010 Han SJ, Chang J, Franklin AD, Bol AA, Loesing R, Guo D, Tulevski GS, Haensch W, Chen Z. Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates Technical Digest - International Electron Devices Meeting, Iedm. 9.1.1-9.1.4. DOI: 10.1109/IEDM.2010.5703326  1
2010 Liu Z, Chang P, Yu X, Deng J, Han SJ, Shahidi G, Haensch W, Rim K. An anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. 3.6.1-3.6.4. DOI: 10.1109/IEDM.2010.5703291  1
2010 Sun Y, Tuleski G, Han SJ, Haensch W, Chen Z. Improve variability in carbon nanotube FETs by scaling Device Research Conference - Conference Digest, Drc. 283-284. DOI: 10.1109/DRC.2010.5551959  1
2010 Lin YM, Dimitrakopoulos C, Farmer DB, Han SJ, Wu Y, Zhu W, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Grill A, Avouris P. Multicarrier transport in epitaxial multilayer graphene Applied Physics Letters. 97. DOI: 10.1063/1.3485671  1
2010 Han SJ, Wang S. Magnetic Nanotechnology for Biodetection Jala - Journal of the Association For Laboratory Automation. 15: 93-98. DOI: 10.1016/j.jala.2009.10.008  1
2009 Han SJ, Guo D, Wang X, Mocuta AC, Henson WK, Rim K. Reverse temperature dependence of circuit performance in high- k/metal-gate technology Ieee Electron Device Letters. 30: 1344-1346. DOI: 10.1109/LED.2009.2033082  1
2009 Liang Q, Greene B, Han SJ, Wang Y, Liang Y, Cai M, Yang F, Amarnath K, Johnson J, Nowak E, Oldiges P, Henson W, Maciejewski E, Narasimha S, Leobandung E, et al. On the systematic analysis of ring-delay performance using statistical behavior model 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378332  1
2009 Greene B, Liang Q, Amarnath K, Wang Y, Schaeffer J, Cai M, Liang Y, Saroop S, Cheng J, Rotondaro A, Han SJ, Mo R, McStay K, Ku S, Pal R, et al. High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper Digest of Technical Papers - Symposium On Vlsi Technology. 140-141.  1
2008 Xu L, Yu H, Han SJ, Osterfeld S, White RL, Pourmand N, Wang SX. Giant Magnetoresistive Sensors for DNA Microarray. Ieee Transactions On Magnetics. 44: 3989-3991. PMID 20824116 DOI: 10.1109/TMAG.2008.2002795  1
2008 Osterfeld SJ, Yu H, Gaster RS, Caramuta S, Xu L, Han SJ, Hall DA, Wilson RJ, Sun S, White RL, Davis RW, Pourmand N, Wang SX. Multiplex protein assays based on real-time magnetic nanotag sensing. Proceedings of the National Academy of Sciences of the United States of America. 105: 20637-40. PMID 19074273 DOI: 10.1073/pnas.0810822105  1
2008 Martin LW, Chu YH, Holcomb MB, Huijben M, Yu P, Han SJ, Lee D, Wang SX, Ramesh R. Nanoscale control of exchange bias with BiFeO3 thin films. Nano Letters. 8: 2050-5. PMID 18547121 DOI: 10.1021/nl801391m  1
2008 Xu L, Yu H, Akhras MS, Han SJ, Osterfeld S, White RL, Pourmand N, Wang SX. Giant magnetoresistive biochip for DNA detection and HPV genotyping. Biosensors & Bioelectronics. 24: 99-103. PMID 18457945 DOI: 10.1016/j.bios.2008.03.030  1
2008 Chu YH, Martin LW, Holcomb MB, Gajek M, Han SJ, He Q, Balke N, Yang CH, Lee D, Hu W, Zhan Q, Yang PL, Fraile-Rodríguez A, Scholl A, Wang SX, et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. Nature Materials. 7: 478-82. PMID 18438412 DOI: 10.1038/nmat2184  1
2008 Han SJ, Wang X, Chang P, Guo D, Na MH, Rim K. On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796757  1
2008 Yu X, Han SJ, Zamdmer N, Deng J, Nowak EJ, Rim K. Improved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlation Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796666  1
2008 Chu YH, Martin LW, Holcomb MB, Gajek M, Han SJ, He Q, Balke N, Yang CH, Lee D, Hu W, Zhan Q, Yang PL, Fraile-Rodríguez A, Scholl A, Wang SX, et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic (Nature Materials (2008) 7, (478-482)) Nature Materials. 7: 678. DOI: 10.1038/nmat2246  1
2008 Hu W, Wilson RJ, Koh A, Fu A, Faranesh AZ, Earhart CM, Osterfeld SJ, Han SJ, Xu L, Guccione S, Sinclair R, Wang SX. High-moment antiferromagnetic nanoparticles with tunable magnetic properties Advanced Materials. 20: 1479-1483. DOI: 10.1002/adma.200703077  1
2007 Hu W, Wilson RJ, Xu L, Han SJ, Wang SX. Patterning of high density magnetic nanodot arrays by nanoimprint lithography Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 1294-1297. DOI: 10.1116/1.2484497  1
2007 Han SJ, Yu H, Murmann B, Pourmand N, Wang SX. A high-density magnetoresistive biosensor array with drift-compensation mechanism Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 168-169+594+151. DOI: 10.1109/ISSCC.2007.373347  1
2007 Martin LW, Chu YH, Zhan Q, Ramesh R, Han SJ, Wang SX, Warusawithana M, Schlom DG. Room temperature exchange bias and spin valves based on BiFeO 3/SrRuO3SrTi/O3/Si (001) heterostructures Applied Physics Letters. 91. DOI: 10.1063/1.2801695  1
2006 Han SJ, Xu L, Wilson RJ, Wang SX. A novel zero-drift detection method for highly sensitive GMR biochips Ieee Transactions On Magnetics. 42: 3560-3562. DOI: 10.1109/TMAG.2006.879615  1
2006 Han S, Xu L, Wang SX, Xie J, Sun S. A new method of temperature drift compensation for highly sensitive magnetoresistive biochips Intermag 2006 - Ieee International Magnetics Conference. 107. DOI: 10.1109/INTMAG.2006.375607  1
2006 Han SJ, Xu L, Yu H, Wilson RJ, White RL, Pourmand N, Wang SX. CMOS integrated DNA microarray based on GMR sensors Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346887  1
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