Year |
Citation |
Score |
2020 |
Gola D, Singh B, Srinivas PSTN, Tiwari PK. Thermal Noise Models for Trigate Junctionless Transistors Including Substrate Bias Effects Ieee Transactions On Electron Devices. 67: 263-269. DOI: 10.1109/Ted.2019.2953084 |
0.314 |
|
2020 |
Kumar S, Singh Y, Singh B, Tiwari PK. Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET Based Biosensor Ieee Sensors Journal. 1-1. DOI: 10.1109/Jsen.2020.3001300 |
0.37 |
|
2020 |
Srinivas PSTN, Kumar A, Jit S, Tiwari PK. Self-heating effects and hot carrier degradation in In 0.53 Ga 0.47 As Gate-All-Around (GAA) MOSFETs Semiconductor Science and Technology. 35: 65008. DOI: 10.1088/1361-6641/Ab7F9B |
0.387 |
|
2020 |
Moparthi S, Adarsh KP, Tiwari PK, Saramekala GK. Analog and RF performance evaluation of negative capacitance SOI junctionless transistor Aeu-International Journal of Electronics and Communications. 122: 153243. DOI: 10.1016/J.Aeue.2020.153243 |
0.373 |
|
2020 |
Duksh YS, Singh B, Gola D, Tiwari PK, Jit S. Subthreshold Modeling of Graded Channel Double Gate Junctionless FETs Silicon. DOI: 10.1007/S12633-020-00514-1 |
0.378 |
|
2020 |
Srinivas PSTN, Kumar A, Tiwari PK. Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs) Silicon. 1-11. DOI: 10.1007/S12633-020-00400-W |
0.456 |
|
2020 |
Purwar V, Gupta R, Kumar N, Awasthi H, Dixit VK, Singh K, Dubey S, Tiwari PK. Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs Applied Physics A. 126: 1-8. DOI: 10.1007/S00339-020-03929-0 |
0.372 |
|
2019 |
Kumar A, Srinivas PSTN, Bhushan S, Dubey S, Singh YK, Tiwari PK. Threshold Voltage Modeling of Double Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors (DGAA MOSFETs) Including the Fringing Field Effects Journal of Nanoelectronics and Optoelectronics. 14: 1555-1564. DOI: 10.1166/Jno.2019.2658 |
0.337 |
|
2019 |
Gola D, Singh B, Tiwari PK. Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFET s Using Substrate Bias Induced Effects Ieee Transactions On Nanotechnology. 18: 329-335. DOI: 10.1109/Tnano.2019.2906567 |
0.459 |
|
2019 |
Gola D, Singh B, Singh J, Jit S, Tiwari PK. Static and Quasi-Static Drain Current Modeling of Tri-Gate Junctionless Transistor With Substrate Bias-Induced Effects Ieee Transactions On Electron Devices. 66: 2876-2883. DOI: 10.1109/Ted.2019.2915294 |
0.432 |
|
2019 |
Kumar A, Srinivas PSTN, Tiwari PK. An Insight Into Self-Heating Effects and Its Implications on Hot Carrier Degradation for Silicon-Nanotube-Based Double Gate-All-Around (DGAA) MOSFETs Ieee Journal of the Electron Devices Society. 7: 1100-1108. DOI: 10.1109/Jeds.2019.2947604 |
0.395 |
|
2019 |
Kumar A, Bhushan S, Tiwari PK. Drain current modelling of double gate-all-around (DGAA) MOSFETs Iet Circuits Devices & Systems. 13: 519-525. DOI: 10.1049/Iet-Cds.2018.5201 |
0.432 |
|
2019 |
Singh K, Kumar S, Tiwari PK, Yadav AB, Dubey S, Jit S. Semianalytical Threshold Voltage Model of a Double-Gate Nanoscale RingFET for Terahertz Applications in Radiation-Hardened (Rad-Hard) Environments Journal of Electronic Materials. 48: 6366-6371. DOI: 10.1007/S11664-019-07411-3 |
0.323 |
|
2018 |
Kumar A, Tiwari PK. An Explicit Unified Drain Current Model for Silicon-Nanotube-Based Ultrathin Double Gate-All-Around mosfet s Ieee Transactions On Nanotechnology. 17: 1224-1234. DOI: 10.1109/Tnano.2018.2870723 |
0.428 |
|
2018 |
Gola D, Singh B, Tiwari PK. Subthreshold Modeling of Tri-Gate Junctionless Transistors With Variable Channel Edges and Substrate Bias Effects Ieee Transactions On Electron Devices. 65: 1663-1671. DOI: 10.1109/Ted.2018.2809865 |
0.451 |
|
2017 |
Samoju VR, Mohapatra S, Bhushan S, Tiwari PK. Analytical Modeling and Simulation of Subthreshold Characteristics of Recessed-Source/Drain (Re-S/D) Silicon-on-Insulator MOSFETs with Gaussian Doping Profile Journal of Nanoelectronics and Optoelectronics. 12: 490-498. DOI: 10.1166/Jno.2017.2037 |
0.373 |
|
2017 |
Kumar A, Bhushan S, Tiwari PK. A Threshold Voltage Model of Silicon-Nanotube-Based Ultrathin Double Gate-All-Around (DGAA) MOSFETs Incorporating Quantum Confinement Effects Ieee Transactions On Nanotechnology. 16: 868-875. DOI: 10.1109/Tnano.2017.2717841 |
0.445 |
|
2017 |
Gola D, Singh B, Tiwari PK. A Threshold Voltage Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias Effects Ieee Transactions On Electron Devices. 64: 3534-3540. DOI: 10.1109/Ted.2017.2722044 |
0.408 |
|
2017 |
Samoju VR, Mahapatra K, Tiwari PK. Analytical modeling of subthreshold characteristics by considering quantum confinement effects in ultrathin dual-metal quadruple gate (DMQG) MOSFETs Superlattices and Microstructures. 111: 704-713. DOI: 10.1016/J.Spmi.2017.07.032 |
0.432 |
|
2017 |
Kumar A, Bhushan S, Tiwari PK. Analytical modeling of subthreshold characteristics of ultra-thin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects Superlattices and Microstructures. 109: 567-578. DOI: 10.1016/J.Spmi.2017.05.038 |
0.439 |
|
2017 |
Singh B, Rai TN, Gola D, Singh K, Goel E, Kumar S, Tiwari PK, Jit S. Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure Materials Science in Semiconductor Processing. 71: 161-165. DOI: 10.1016/J.Mssp.2017.07.014 |
0.381 |
|
2017 |
Saramekala GK, Tiwari PK. Analytical Subthreshold Current and Subthreshold Swing Models for a Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFET with Back-Gate Control Journal of Electronic Materials. 46: 5046-5056. DOI: 10.1007/S11664-017-5508-7 |
0.453 |
|
2016 |
Tiwari PK, Kumar M, Naik RS, Saramekala GK. Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs Journal of Semiconductors. 37: 64003. DOI: 10.1088/1674-4926/37/6/064003 |
0.334 |
|
2016 |
Saramekala GK, Tiwari PK. An Analytical Threshold Voltage Model of Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Back-Gate Control Journal of Electronic Materials. 45: 5367-5374. DOI: 10.1007/S11664-016-4752-6 |
0.471 |
|
2016 |
Tiwari PK, Samoju VR, Sunkara T, Dubey S, Jit S. Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs) Journal of Computational Electronics. 15: 516-524. DOI: 10.1007/S10825-016-0819-0 |
0.441 |
|
2016 |
Samoju VR, Tiwari PK. Threshold voltage modeling for dual-metal quadruple-gate DMQG MOSFETs International Journal of Numerical Modelling-Electronic Networks Devices and Fields. 29: 695-706. DOI: 10.1002/Jnm.2126 |
0.449 |
|
2015 |
Saramekala GK, Dubey S, Tiwari PK. A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high-k dielectric Chinese Physics B. 24: 108505. DOI: 10.1088/1674-1056/24/10/108505 |
0.441 |
|
2015 |
Samoju VR, Dubey S, Tiwari PK. Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs Journal of Computational Electronics. 14: 582-592. DOI: 10.1007/s10825-015-0690-4 |
0.432 |
|
2014 |
Kumar M, Dubey S, Tiwari PK, Jit S. Analytical modeling of threshold voltage of short-channel strained-Si on silicon-germanium-on-insulator (SGOI) metal-oxide-semiconductor field-effect transistors with localized charges Journal of Computational and Theoretical Nanoscience. 11: 165-172. DOI: 10.1166/jctn.2014.3332 |
0.374 |
|
2014 |
Tiwari PK, Saramekala GK, Dubey S, Mukhopadhyay AK. Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon - Germanium substrates Journal of Semiconductors. 35. DOI: 10.1088/1674-4926/35/10/104002 |
0.45 |
|
2014 |
Samoju VR, Jit S, Tiwari PK. A quasi-3D threshold voltage model for dual-metal quadruple-gate MOSFETs Chinese Physics Letters. 31. DOI: 10.1088/0256-307X/31/12/128502 |
0.433 |
|
2014 |
Kumar A, Tiwari PK. A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects Solid-State Electronics. 95: 52-60. DOI: 10.1016/j.sse.2014.03.004 |
0.442 |
|
2014 |
Saramekala GK, Dubey S, Tiwari PK. Analog and radio-frequency (RF) performance evaluation of fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs Superlattices and Microstructures. 76: 77-89. DOI: 10.1016/j.spmi.2014.10.005 |
0.362 |
|
2014 |
Saramekala GK, Santra A, Kumar M, Dubey S, Jit S, Tiwari PK. Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs Journal of Computational Electronics. 13: 467-476. DOI: 10.1007/s10825-014-0557-0 |
0.461 |
|
2013 |
Bhushan S, Sarangi S, Gopi Krishna S, Santra A, Dubey S, Tiwari PK. An analytical model for the threshold voltage of short- channel double-material-gate (DMG) MOSFETs with a strained-silicon (s-Si) channel on silicon-germanium (SiGe) substrates Journal of Semiconductor Technology and Science. 13: 367-380. DOI: 10.5573/JSTS.2013.13.4.367 |
0.432 |
|
2013 |
Dubey S, Santra A, Saramekala G, Kumar M, Tiwari PK. An analytical threshold voltage model for triple-material cylindrical gate-all-around (TM-CGAA) MOSFETs Ieee Transactions On Nanotechnology. 12: 766-774. DOI: 10.1109/TNANO.2013.2273805 |
0.433 |
|
2013 |
Dubey S, Tiwari PK, Jit S. On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile Journal of Semiconductors. 34. DOI: 10.1088/1674-4926/34/5/054001 |
0.451 |
|
2013 |
Saramekala GK, Santra A, Dubey S, Jit S, Tiwari PK. An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET Superlattices and Microstructures. 60: 580-595. DOI: 10.1016/j.spmi.2013.05.022 |
0.455 |
|
2013 |
Sarangi S, Bhushan S, Santra A, Dubey S, Jit S, Tiwari PK. A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs Superlattices and Microstructures. 60: 263-279. DOI: 10.1016/j.spmi.2013.05.009 |
0.435 |
|
2013 |
Kumar M, Dubey S, Tiwari PK, Jit S. Analytical models of subthreshold current and swing of short-channel strained-Si (s-Si) on SiliconGermanium-on-Insulator (SGOI) MOSFETs Superlattices and Microstructures. 58: 1-10. DOI: 10.1016/j.spmi.2013.02.012 |
0.439 |
|
2013 |
Kumar M, Dubey S, Tiwari PK, Jit S. Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study Current Applied Physics. 13: 1778-1786. DOI: 10.1016/j.cap.2013.07.013 |
0.427 |
|
2013 |
Kumar M, Dubey S, Tiwari PK, Jit S. Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs Journal of Computational Electronics. 12: 275-280. DOI: 10.1007/s10825-013-0442-2 |
0.395 |
|
2013 |
Kumar M, Dubey S, Tiwari PK, Jit S. An analytical model of threshold voltage for short-channel double-material-gate (DMG) strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs Journal of Computational Electronics. 12: 20-28. DOI: 10.1007/s10825-012-0429-4 |
0.424 |
|
2012 |
Tiwari PK, Dubey S, Singh K, Jit S. Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs Superlattices and Microstructures. 51: 715-724. DOI: 10.1016/j.spmi.2012.02.009 |
0.452 |
|
2011 |
Tiwari PK, Jit S. A threshold voltage model for the short-channel double-gate (DG) MOSFETs with a vertical gaussian doping profile Journal of Nanoelectronics and Optoelectronics. 6: 207-213. DOI: 10.1166/jno.2011.1151 |
0.419 |
|
2011 |
Tiwari PK, Jit S. Subthreshold current model for short-channel double-gate (DG) MOSFETs with a vertical gaussian doping profile Journal of Computational and Theoretical Nanoscience. 8: 1296-1303. DOI: 10.1166/jctn.2011.1813 |
0.412 |
|
2011 |
Dubey S, Tiwari PK, Jit S. A two-dimensional model for the subthreshold swing of short-channel double-gate metal-oxide-semiconductor field effect transistors with a vertical Gaussian-like doping profile Journal of Applied Physics. 109. DOI: 10.1063/1.3552309 |
0.455 |
|
2010 |
Tiwari PK, Jit S. A subthreshold swing model for symmetric double- gate (DG) MOSFETs with vertical gaussian doping Journal of Semiconductor Technology and Science. 10: 107-117. DOI: 10.5573/Jsts.2010.10.2.107 |
0.418 |
|
2010 |
Dubey S, Tiwari PK, Jit S. A two-dimensional model for the surface potential and subthreshold current of doped Double-Gate (DG) MOSFETs with a vertical Gaussian-like doping profile Journal of Nanoelectronics and Optoelectronics. 5: 332-339. DOI: 10.1166/jno.2010.1119 |
0.454 |
|
2010 |
Tiwari PK, Jit S. A doping-dependent subthreshold current model for short-channel symmetric double-gate (DG) MOSFETs Journal of Nanoelectronics and Optoelectronics. 5: 82-88. DOI: 10.1166/jno.2010.1070 |
0.444 |
|
2010 |
Tiwari PK, Dubey S, Singh M, Jit S. A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 108. DOI: 10.1063/1.3488605 |
0.464 |
|
2010 |
Dubey S, Tiwari PK, Jit S. A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile Journal of Applied Physics. 108. DOI: 10.1063/1.3460796 |
0.478 |
|
2010 |
Tiwari PK, Panda CR, Agarwal A, Sharma P, Jit S. Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs Iet Circuits, Devices and Systems. 4: 337-345. DOI: 10.1049/iet-cds.2009.0201 |
0.457 |
|
2010 |
Tiwari PK, Dubey S, Jit S. Subthreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile International Conference On Circuits, Systems and Signals - Proceedings. 27-34. |
0.305 |
|
2009 |
Tiwari PK, Kumar S, Mittal S, Srivastava V, Pandey U, Jit S. A 2danalytical model of the channel potential and threshold voltage of double-gate (dg) mosfets with vertical gaussian doping profile 2009 International Multimedia, Signal Processing and Communication Technologies, Impact 2009. 52-55. DOI: 10.1109/MSPCT.2009.5164172 |
0.317 |
|
2009 |
Jit S, Pandey PK, Tiwari PK. Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs Solid-State Electronics. 53: 57-62. DOI: 10.1016/j.sse.2008.09.013 |
0.444 |
|
1991 |
Tiwari PK, Lakhotia SC. Restriction enzyme digestion of heterochromatin in Drosophila nasuta Journal of Biosciences. 16: 187-197. DOI: 10.1007/BF02703284 |
0.443 |
|
1984 |
Lakhotia SC, Tiwari PK. Replication in Drosophila chromosomes - XI. Differences in temporal order of replication in two polytene cell types in Drosophila nasuta Chromosoma. 89: 212-217. DOI: 10.1007/BF00295002 |
0.456 |
|
1984 |
Tiwari PK, Lakhotia SC. Replication in Drosophila chromosomes XIII. Comparison of late replicating sites in two polytene cell types in D. hydei Genetica. 65: 227-234. DOI: 10.1007/BF00122909 |
0.468 |
|
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