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Sayeef Salahuddin - Publications

Affiliations: 
Electrical Engineering and Computer Science University of California, Berkeley, Berkeley, CA, United States 
Area:
Negative Capacitance
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51 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Cheema SS, Shanker N, Wang LC, Hsu CH, Hsu SL, Liao YH, San Jose M, Gomez J, Chakraborty W, Li W, Bae JH, Volkman SK, Kwon D, Rho Y, Pinelli G, ... ... Salahuddin S, et al. Ultrathin ferroic HfO-ZrO superlattice gate stack for advanced transistors. Nature. 604: 65-71. PMID 35388197 DOI: 10.1038/s41586-022-04425-6  0.323
2021 Huang X, Sayed S, Mittelstaedt J, Susarla S, Karimeddiny S, Caretta L, Zhang H, Stoica VA, Gosavi T, Mahfouzi F, Sun Q, Ercius P, Kioussis N, Salahuddin S, Ralph DC, et al. Novel Spin-Orbit Torque Generation at Room Temperature in an All-Oxide Epitaxial La Sr MnO /SrIrO System. Advanced Materials (Deerfield Beach, Fla.). e2008269. PMID 33960025 DOI: 10.1002/adma.202008269  0.319
2019 Roschewsky N, Walker ES, Gowtham P, Muschinske S, Hellman F, Bank SR, Salahuddin S. Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures Physical Review B. 99. DOI: 10.1103/Physrevb.99.195103  0.339
2018 Li X, Song M, Xu N, Luo S, Zou Q, Zhang S, Hong J, Yang X, Min T, Han X, Zou X, Zhu J, Salahuddin S, You L. Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic Functions Ieee Transactions On Electron Devices. 65: 4687-4693. DOI: 10.1109/Ted.2018.2866621  0.404
2017 Yang Y, Wilson RB, Gorchon J, Lambert CH, Salahuddin S, Bokor J. Ultrafast magnetization reversal by picosecond electrical pulses. Science Advances. 3: e1603117. PMID 29119135 DOI: 10.1126/Sciadv.1603117  0.322
2017 Mcguire FA, Lin YC, Price KM, Rayner GB, Khandelwal S, Salahuddin S, Franklin AD. Sustained sub-60 mV/decade switching via the negative capacitance effect in MoS2 transistors. Nano Letters. PMID 28691824 DOI: 10.1021/Acs.Nanolett.7B01584  0.35
2017 Bakaul SR, Serrao CR, Lee O, Lu Z, Yadav A, Carraro C, Maboudian R, Ramesh R, Salahuddin S. High Speed Epitaxial Perovskite Memory on Flexible Substrates. Advanced Materials (Deerfield Beach, Fla.). PMID 28112840 DOI: 10.1002/Adma.201605699  0.315
2017 Lin Y, Kushwaha P, Agarwal H, Chang H, Duarte JP, Sachid AB, Khandelwal S, Salahuddin S, Hu C. Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs Ieee Transactions On Electron Devices. 64: 3986-3990. DOI: 10.1109/Ted.2017.2735455  0.301
2017 Camsari KY, Salahuddin S, Datta S. Implementing p-bits With Embedded MTJ Ieee Electron Device Letters. 38: 1767-1770. DOI: 10.1109/Led.2017.2768321  0.531
2017 Roschewsky N, Lambert C, Salahuddin S. Spin-orbit torque switching of ultralarge-thickness ferrimagnetic GdFeCo Physical Review B. 96. DOI: 10.1103/PhysRevB.96.064406  0.314
2017 Lu Z, Serrao C, Khan AI, You L, Wong JC, Ye Y, Zhu H, Zhang X, Salahuddin S. Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric Applied Physics Letters. 111: 023104. DOI: 10.1063/1.4992113  0.305
2016 Khan AI, Chatterjee K, Duarte JP, Lu Z, Sachid A, Khandelwal S, Ramesh R, Hu C, Salahuddin S. Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor Ieee Electron Device Letters. 37: 111-114. DOI: 10.1109/Led.2015.2501319  0.342
2016 Roschewsky N, Matsumura T, Cheema S, Hellman F, Kato T, Iwata S, Salahuddin S. Spin-orbit torques in ferrimagnetic GdFeCo alloys Applied Physics Letters. 109. DOI: 10.1063/1.4962812  0.314
2015 Mishra V, Smith S, Liu L, Zahid F, Zhu Y, Guo H, Salahuddin S. Screening in Ultrashort (5 nm) Channel MoS₂ Transistors: A Full-Band Quantum Transport Study Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2444353  0.62
2015 Khan A, Salahuddin S. Negative capacitance in ferroelectric materials and implications for steep transistors 2015 Ieee Soi-3d-Subthreshold Microelectronics Technology Unified Conference, S3s 2015. DOI: 10.1109/S3S.2015.7333485  0.344
2015 Lee O, You L, Jang J, Subramanian V, Salahuddin S. Flexible spin-orbit torque devices Applied Physics Letters. 107. DOI: 10.1063/1.4936934  0.395
2015 Pattabi A, Gu Z, Gorchon J, Yang Y, Finley J, Lee OJ, Raziq HA, Salahuddin S, Bokor J. Direct optical detection of current induced spin accumulation in metals by magnetization-induced second harmonic generation Applied Physics Letters. 107. DOI: 10.1063/1.4933094  0.318
2015 Khan AI, Salahuddin S. Extending CMOS with negative capacitance Cmos and Beyond: Logic Switches For Terascale Integrated Circuits. 56-76. DOI: 10.1017/CBO9781107337886.006  0.332
2014 Heron JT, Bosse JL, He Q, Gao Y, Trassin M, Ye L, Clarkson JD, Wang C, Liu J, Salahuddin S, Ralph DC, Schlom DG, Iñiguez J, Huey BD, Ramesh R. Deterministic switching of ferromagnetism at room temperature using an electric field. Nature. 516: 370-3. PMID 25519134 DOI: 10.1038/Nature14004  0.342
2014 Hsieh TE, Chang EY, Song YZ, Lin YC, Wang HC, Liu SC, Salahuddin S, Hu CC. Gate recessed quasi-normally off Al2O3/AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using PEALD AlN interfacial passivation layer Ieee Electron Device Letters. 35: 732-734. DOI: 10.1109/LED.2014.2321003  0.303
2014 Wang J, Xie LS, Wang CS, Zhang HZ, Shu L, Bai J, Chai YS, Zhao X, Nie JC, Cao CB, Gu CZ, Xiong CM, Sun Y, Shi J, Salahuddin S, et al. Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/PhysRevB.90.224407  0.329
2013 Ganapathi K, Yoon Y, Lundstrom M, Salahuddin S. Ballistic I-v characteristics of short-channel graphene field-effect transistors: Analysis and optimization for analog and RF applications Ieee Transactions On Electron Devices. 60: 958-964. DOI: 10.1109/Ted.2013.2238236  0.628
2013 Mishra V, Smith S, Ganapathi K, Salahuddin S. Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit Technical Digest - International Electron Devices Meeting, Iedm. 5.6.1-5.6.4. DOI: 10.1109/IEDM.2013.6724569  0.618
2013 Yeung CW, Khan AI, Salahuddin S, Hu C. Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs 2013 3rd Berkeley Symposium On Energy Efficient Electronic Systems, E3s 2013 - Proceedings. DOI: 10.1109/E3S.2013.6705876  0.306
2012 Datta D, Behin-Aein B, Datta S, Salahuddin S. Voltage asymmetry of spin-transfer torques Ieee Transactions On Nanotechnology. 11: 261-272. DOI: 10.1109/Tnano.2011.2163147  0.753
2012 Bhowmik D, You L, Salahuddin S. Possible route to low current, high speed, dynamic switching in a perpendicular anisotropy CoFeB-MgO junction using Spin Hall Effect of Ta Technical Digest - International Electron Devices Meeting, Iedm. 29.7.1-29.7.4. DOI: 10.1109/IEDM.2012.6479132  0.377
2012 Ashraf K, Smith S, Salahuddin S. Electric field induced magnetic switching at room temperature: Switching speed, device scaling and switching energy Technical Digest - International Electron Devices Meeting, Iedm. 26.5.1-26.5.4. DOI: 10.1109/IEDM.2012.6479109  0.324
2012 Ganapathi K, Lundstrom M, Salahuddin S. Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered? Device Research Conference - Conference Digest, Drc. 85-86. DOI: 10.1109/DRC.2012.6256951  0.6
2012 Datta S, Salahuddin S, Behin-Aein B. Non-volatile spin switch for Boolean and non-Boolean logic Applied Physics Letters. 101. DOI: 10.1063/1.4769989  0.742
2012 Ganapathi K, Salahuddin S. Zener tunneling: Congruence between semi-classical and quantum ballistic formalisms Journal of Applied Physics. 111. DOI: 10.1063/1.4729567  0.567
2011 Yoon Y, Ganapathi K, Salahuddin S. How good can monolayer MoS₂ transistors be? Nano Letters. 11: 3768-73. PMID 21790188 DOI: 10.1021/Nl2018178  0.649
2011 Yoon Y, Salahuddin S. Simulation of carbon heterostructures as barrier free tunneling transistors Ecs Transactions. 35: 253-258. DOI: 10.1149/1.3569918  0.311
2011 Ganapathi K, Salahuddin S. Heterojunction vertical band-to-band tunneling transistors for steep subthreshold swing and high on current Ieee Electron Device Letters. 32: 689-691. DOI: 10.1109/Led.2011.2112753  0.641
2011 Ganapathi K, Yoon Y, Salahuddin S. Monolayer MoS2 transistors - Ballistic performance limit analysis Device Research Conference - Conference Digest, Drc. 79-80. DOI: 10.1109/DRC.2011.5994421  0.654
2010 Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9. PMID 21068839 DOI: 10.1038/Nature09541  0.628
2010 Behin-Aein B, Datta D, Salahuddin S, Datta S. Proposal for an all-spin logic device with built-in memory. Nature Nanotechnology. 5: 266-70. PMID 20190748 DOI: 10.1038/Nnano.2010.31  0.755
2010 Datta D, Behin-Aein B, Salahuddin S, Datta S. Quantitative model for TMR and spin-transfer torque in MTJ devices Technical Digest - International Electron Devices Meeting, Iedm. 22.8.1-22.8.4. DOI: 10.1109/IEDM.2010.5703417  0.736
2010 Ganapathi K, Yoon Y, Salahuddin S. Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2010.5551943  0.64
2010 Yoon Y, Salahuddin S. Structure and doping effects in carbon heterojunction FETs towards barrier-free inter-band tunneling Device Research Conference - Conference Digest, Drc. 215-216. DOI: 10.1109/DRC.2010.5551923  0.358
2010 Ganapathi K, Yoon Y, Salahuddin S. Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance Applied Physics Letters. 97. DOI: 10.1063/1.3466908  0.635
2009 Behin-Aein B, Salahuddin S, Datta S. Switching energy of ferromagnetic logic bits Ieee Transactions On Nanotechnology. 8: 505-514. DOI: 10.1109/Tnano.2009.2016657  0.704
2008 Salahuddin S, Datta S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Letters. 8: 405-10. PMID 18052402 DOI: 10.1021/Nl071804G  0.529
2008 Salahuddin S, Datta S. Can the subthreshold swing in a classical FET be lowered below 60 mV/decade? Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796789  0.324
2007 Salahuddin S, Datta D, Srivastava P, Datta S. Quantum transport simulation of tunneling based Spin Torque Transfer (STT) devices: Design trade offs and torque efficiency Technical Digest - International Electron Devices Meeting, Iedm. 121-124. DOI: 10.1109/IEDM.2007.4418879  0.618
2007 Salahuddin S, Datta S. Simulation of spin torque devices with inelastic spin flip scattering 65th Drc Device Research Conference. 249-250. DOI: 10.1109/DRC.2007.4373739  0.312
2007 Salahuddin S, Datta S. Interacting systems for self-correcting low power switching Applied Physics Letters. 90. DOI: 10.1063/1.2709640  0.444
2006 Salahuddin S, Datta S. Self-consistent simulation of hybrid spintronic devices Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346740  0.391
2006 Salahuddin S, Datta S. Electrical detection of spin excitations Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.081301  0.557
2006 Salahuddin S, Datta S. Self-consistent simulation of quantum transport and magnetization dynamics in spin-torque based devices Applied Physics Letters. 89. DOI: 10.1063/1.2359292  0.584
2006 Salahuddin S, Datta S. An all electrical spin detector 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 2: 834-837.  0.363
2005 Salahuddin S, Lundstrom M, Datta S. Transport effects on signal propagation in quantum wires Ieee Transactions On Electron Devices. 52: 1734-1742. DOI: 10.1109/Ted.2005.852170  0.428
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