| Year |
Citation |
Score |
| 2023 |
Zhang T, Dong K, Li J, Meng F, Li J, Munagavalasa S, Grigoropoulos CP, Wu J, Yao J. Twisted moiré photonic crystal enabled optical vortex generation through bound states in the continuum. Nature Communications. 14: 6014. PMID 37758708 DOI: 10.1038/s41467-023-41068-1 |
0.749 |
|
| 2023 |
Dong K, Li J, Zhang T, Gu F, Cai Y, Gupta N, Tang K, Javey A, Yao J, Wu J. Single-pixel reconstructive mid-infrared micro-spectrometer. Optics Express. 31: 14367-14376. PMID 37157302 DOI: 10.1364/OE.485934 |
0.749 |
|
| 2023 |
Li J, Yang R, Rho Y, Ci P, Eliceiri M, Park HK, Wu J, Grigoropoulos CP. Ultrafast Optical Nanoscopy of Carrier Dynamics in Silicon Nanowires. Nano Letters. PMID 36695528 DOI: 10.1021/acs.nanolett.2c04790 |
0.758 |
|
| 2022 |
Ci P, Zhao Y, Sun M, Rho Y, Chen Y, Grigoropoulos CP, Jin S, Li X, Wu J. Breaking Rotational Symmetry in Supertwisted WS Spirals via Moiré Magnification of Intrinsic Heterostrain. Nano Letters. PMID 36346996 DOI: 10.1021/acs.nanolett.2c03347 |
0.747 |
|
| 2022 |
Ci P, Sun M, Upadhyaya M, Song H, Jin L, Sun B, Jones MR, Ager JW, Aksamija Z, Wu J. Giant Isotope Effect of Thermal Conductivity in Silicon Nanowires. Physical Review Letters. 128: 085901. PMID 35275649 DOI: 10.1103/PhysRevLett.128.085901 |
0.742 |
|
| 2021 |
Tang K, Dong K, Li J, Gordon MP, Reichertz FG, Kim H, Rho Y, Wang Q, Lin CY, Grigoropoulos CP, Javey A, Urban JJ, Yao J, Levinson R, Wu J. Temperature-adaptive radiative coating for all-season household thermal regulation. Science (New York, N.Y.). 374: 1504-1509. PMID 34914515 DOI: 10.1126/science.abf7136 |
0.768 |
|
| 2021 |
Dong K, Zhang T, Li J, Wang Q, Yang F, Rho Y, Wang D, Grigoropoulos CP, Wu J, Yao J. Flat Bands in Magic-Angle Bilayer Photonic Crystals at Small Twists. Physical Review Letters. 126: 223601. PMID 34152166 DOI: 10.1103/PhysRevLett.126.223601 |
0.759 |
|
| 2021 |
Liu J, Jin L, Allen FI, Gao Y, Ci P, Kang F, Wu J. Selective Gas Permeation in Defect-Engineered Bilayer Graphene. Nano Letters. PMID 33645993 DOI: 10.1021/acs.nanolett.0c04989 |
0.723 |
|
| 2020 |
Gao Y, Lin X, Smart T, Ci P, Watanabe K, Taniguchi T, Jeanloz R, Ni J, Wu J. Band Engineering of Large-Twist-Angle Graphene/h-BN Moiré Superlattices with Pressure. Physical Review Letters. 125: 226403. PMID 33315461 DOI: 10.1103/PhysRevLett.125.226403 |
0.744 |
|
| 2020 |
Tang K, Dong K, Nicolai CJ, Li Y, Li J, Lou S, Qiu CW, Raulet DH, Yao J, Wu J. Millikelvin-resolved ambient thermography. Science Advances. 6. PMID 33298452 DOI: 10.1126/sciadv.abd8688 |
0.765 |
|
| 2020 |
Xu G, Dong K, Li Y, Li H, Liu K, Li L, Wu J, Qiu CW. Tunable analog thermal material. Nature Communications. 11: 6028. PMID 33247120 DOI: 10.1038/s41467-020-19909-0 |
0.76 |
|
| 2020 |
Ci P, Tian X, Kang J, Salazar A, Eriguchi K, Warkander S, Tang K, Liu J, Chen Y, Tongay S, Walukiewicz W, Miao J, Dubon O, Wu J. Author Correction: Chemical trends of deep levels in van der Waals semiconductors. Nature Communications. 11: 6180. PMID 33243977 DOI: 10.1038/s41467-020-20151-x |
0.764 |
|
| 2020 |
Ci P, Tian X, Kang J, Salazar A, Eriguchi K, Warkander S, Tang K, Liu J, Chen Y, Tongay S, Walukiewicz W, Miao J, Dubon O, Wu J. Chemical trends of deep levels in van der Waals semiconductors. Nature Communications. 11: 5373. PMID 33097722 DOI: 10.1038/s41467-020-19247-1 |
0.8 |
|
| 2020 |
Tang K, Wang X, Dong K, Li Y, Li J, Sun B, Zhang X, Dames C, Qiu C, Yao J, Wu J. A Thermal Radiation Modulation Platform by Emissivity Engineering with Graded Metal-Insulator Transition. Advanced Materials (Deerfield Beach, Fla.). e1907071. PMID 32700403 DOI: 10.1002/Adma.201907071 |
0.777 |
|
| 2020 |
Larciprete MC, Centini M, Paoloni S, Fratoddi I, Dereshgi SA, Tang K, Wu J, Aydin K. Adaptive tuning of infrared emission using VO thin films. Scientific Reports. 10: 11544. PMID 32665664 DOI: 10.1038/S41598-020-68334-2 |
0.323 |
|
| 2020 |
Ke F, Zhang L, Chen Y, Yin K, Wang C, Tzeng YK, Lin Y, Dong H, Liu Z, Tse JS, Mao WL, Wu J, Chen B. Synthesis of Atomically Thin Hexagonal Diamond with Compression. Nano Letters. PMID 32578991 DOI: 10.1021/Acs.Nanolett.0C01872 |
0.419 |
|
| 2020 |
Liu H, Yu X, Wu K, Gao Y, Tongay S, Javey A, Chen L, Hong J, Wu J. Extreme in-plane thermal conductivity anisotropy in titanium trisulfide caused by heat-carrying optical phonons. Nano Letters. PMID 32539416 DOI: 10.1021/Acs.Nanolett.0C01476 |
0.748 |
|
| 2020 |
Liu H, Yang C, Wei B, Jin L, Alatas A, Said A, Tongay S, Yang F, Javey A, Hong J, Wu J. Anomalously Suppressed Thermal Conduction by Electron-Phonon Coupling in Charge-Density-Wave Tantalum Disulfide. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 1902071. PMID 32537392 DOI: 10.1002/Advs.201902071 |
0.594 |
|
| 2020 |
Jin L, Zeltmann SE, Choe HS, Liu H, Allen FI, Minor AM, Wu J. Disorder recovers the Wiedemann-Franz law in the metallic phase of VO2 Physical Review B. 102. DOI: 10.1103/Physrevb.102.041120 |
0.497 |
|
| 2019 |
Lin J, Chen H, Gao Y, Cai Y, Jin J, Etman AS, Kang J, Lei T, Lin Z, Folgueras MC, Quan LN, Kong Q, Sherburne M, Asta M, Sun J, ... ... Wu J, et al. Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite. Proceedings of the National Academy of Sciences of the United States of America. PMID 31685626 DOI: 10.1073/Pnas.1907576116 |
0.383 |
|
| 2019 |
Zhang C, Lyu R, Lv W, Li H, Jiang W, Li J, Gu S, Zhou G, Huang Z, Zhang Y, Wu J, Yang QH, Kang F. A Lightweight 3D Cu Nanowire Network with Phosphidation Gradient as Current Collector for High-Density Nucleation and Stable Deposition of Lithium. Advanced Materials (Deerfield Beach, Fla.). e1904991. PMID 31549760 DOI: 10.1002/Adma.201904991 |
0.301 |
|
| 2019 |
Choe HS, Prabhakar R, Wehmeyer G, Allen FI, Lee W, Jin L, Li Y, Yang P, Qiu C, Dames C, Scott M, Minor AM, Bahk JH, Wu J. Ion write micro-thermotics: programing thermal metamaterials at the microscale. Nano Letters. PMID 31059272 DOI: 10.1021/Acs.Nanolett.9B00984 |
0.518 |
|
| 2019 |
Ke F, Chen Y, Yin K, Yan J, Zhang H, Liu Z, Tse JS, Wu J, Mao HK, Chen B. Large bandgap of pressurized trilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 31004055 DOI: 10.1073/Pnas.1820890116 |
0.38 |
|
| 2019 |
Kocer H, Ozer A, Butun S, Wang K, Wu J, Kurt H, Aydin K. Thermally Tuning Infrared Light Scattering Using Planar Layered Thin Films and Space Gradient Metasurface Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-7. DOI: 10.1109/Jstqe.2019.2900607 |
0.493 |
|
| 2019 |
Choe HS, Li J, Zheng W, Lee J, Suh J, Allen FI, Liu H, Choi H, Walukiewicz W, Zheng H, Wu J. Anomalously high electronic thermal conductivity and Lorenz ratio in Bi2Te3 nanoribbons far from the bipolar condition Applied Physics Letters. 114: 152101. DOI: 10.1063/1.5092221 |
0.662 |
|
| 2019 |
Lee H, Jeong H, Suh J, Doh WH, Baik J, Shin H, Ko J, Wu J, Kim Y, Park JY. Nanoscale Friction on Confined Water Layers Intercalated between MoS2 Flakes and Silica The Journal of Physical Chemistry C. 123: 8827-8835. DOI: 10.1021/Acs.Jpcc.8B11426 |
0.646 |
|
| 2019 |
Zang X, Hohman JN, Yao K, Ci P, Yan A, Wei M, Hayasaka T, Zettl A, Schuck PJ, Wu J, Lin L. Metallo‐Hydrogel‐Assisted Synthesis and Direct Writing of Transition Metal Dichalcogenides Advanced Functional Materials. 29: 1807612. DOI: 10.1002/Adfm.201807612 |
0.749 |
|
| 2018 |
Chen Y, Chen C, Kealhofer R, Liu H, Yuan Z, Jiang L, Suh J, Park J, Ko C, Choe HS, Avila J, Zhong M, Wei Z, Li J, Li S, ... ... Wu J, et al. Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy. Advanced Materials (Deerfield Beach, Fla.). e1800754. PMID 29893020 DOI: 10.1002/Adma.201800754 |
0.688 |
|
| 2018 |
Dong K, Choe HS, Wang X, Liu H, Saha B, Ko C, Deng Y, Tom KB, Lou S, Wang L, Grigoropoulos CP, You Z, Yao J, Wu J. A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition. Small (Weinheim An Der Bergstrasse, Germany). PMID 29479803 DOI: 10.1002/Smll.201703621 |
0.765 |
|
| 2018 |
Wang X, Fan W, Fan Z, Dai W, Zhu K, Hong S, Sun Y, Wu J, Liu K. Substrate modified thermal stability of mono- and few-layer MoS2. Nanoscale. PMID 29410997 DOI: 10.1039/C7Nr08941D |
0.474 |
|
| 2018 |
Wang X, Dong K, Choe HS, Liu H, Lou S, Tom KB, Bechtel HA, You Z, Wu J, Yao J. A multifunctional micro-electro-opto-mechanical platform based on phase-transition materials. Nano Letters. PMID 29400972 DOI: 10.1021/acs.nanolett.7b04477 |
0.778 |
|
| 2018 |
Suh J, Tan TL, Zhao W, Park J, Lin DY, Park TE, Kim J, Jin C, Saigal N, Ghosh S, Wong ZM, Chen Y, Wang F, Walukiewicz W, Eda G, ... Wu J, et al. Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. Nature Communications. 9: 199. PMID 29335411 DOI: 10.1038/S41467-017-02631-9 |
0.7 |
|
| 2018 |
Liu Z, Banar B, Butun S, Kocer H, Wang K, Scheuer J, Wu J, Aydin K. Dynamic infrared thin-film absorbers with tunable absorption level based on VO2 phase transition Optical Materials Express. 8: 2151. DOI: 10.1364/Ome.8.002151 |
0.52 |
|
| 2018 |
Suh J, Sarkar T, Choe HS, Park J, Venkatesan T, Wu J. Compensated thermal conductivity of metallically conductive Ta-doped TiO2 Applied Physics Letters. 113: 022103. DOI: 10.1063/1.5044563 |
0.698 |
|
| 2018 |
Kim E, Lee Y, Ko C, Park Y, Yeo J, Chen Y, Choe HS, Allen FI, Rho J, Tongay S, Wu J, Kim K, Grigoropoulos CP. Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction Applied Physics Letters. 113: 013105. DOI: 10.1063/1.5022705 |
0.597 |
|
| 2018 |
Liu K, Lee S, Yang S, Delaire O, Wu J. Recent progresses on physics and applications of vanadium dioxide Materials Today. 21: 875-896. DOI: 10.1016/J.Mattod.2018.03.029 |
0.432 |
|
| 2018 |
Song H, Liu J, Liu B, Wu J, Cheng H, Kang F. Two-Dimensional Materials for Thermal Management Applications Joule. 2: 442-463. DOI: 10.1016/J.Joule.2018.01.006 |
0.335 |
|
| 2018 |
Dong K, Hong S, Deng Y, Ma H, Li J, Wang X, Yeo J, Wang L, Lou S, Tom KB, Liu K, You Z, Wei Y, Grigoropoulos CP, Yao J, ... Wu J, et al. Reconfigurable Photonic Platforms: A Lithography-Free and Field-Programmable Photonic Metacanvas (Adv. Mater. 5/2018) Advanced Materials. 30: 1870034. DOI: 10.1002/Adma.201870034 |
0.317 |
|
| 2017 |
Dong K, Hong S, Deng Y, Ma H, Li J, Wang X, Yeo J, Wang L, Lou S, Tom KB, Liu K, You Z, Wei Y, Grigoropoulos CP, Yao J, ... Wu J, et al. A Lithography-Free and Field-Programmable Photonic Metacanvas. Advanced Materials (Deerfield Beach, Fla.). PMID 29226459 DOI: 10.1002/Adma.201703878 |
0.78 |
|
| 2017 |
Choe HS, Suh J, Ko C, Dong K, Lee S, Park J, Lee Y, Wang K, Wu J. Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps. Scientific Reports. 7: 7131. PMID 28769057 DOI: 10.1038/S41598-017-07466-4 |
0.801 |
|
| 2017 |
Ci P, Chen Y, Kang J, Suzuki R, Choe HS, Suh J, Ko C, Park T, Shen K, Iwasa Y, Tongay S, Ager JW, Wang LW, Wu J. Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting. Nano Letters. PMID 28657751 DOI: 10.1021/Acs.Nanolett.7B02159 |
0.799 |
|
| 2017 |
Chen Y, Zhang S, Ke F, Ko C, Lee S, Liu K, Chen B, Ager JW, Jeanloz R, Eyert V, Wu J. Pressure-Temperature Phase Diagram of Vanadium Dioxide. Nano Letters. PMID 28266861 DOI: 10.1021/Acs.Nanolett.7B00233 |
0.618 |
|
| 2017 |
Lee S, Hippalgaonkar K, Yang F, Hong J, Ko C, Suh J, Liu K, Wang K, Urban JJ, Zhang X, Dames C, Hartnoll SA, Delaire O, Wu J. Anomalously low electronic thermal conductivity in metallic vanadium dioxide. Science (New York, N.Y.). 355: 371-374. PMID 28126811 DOI: 10.1126/Science.Aag0410 |
0.807 |
|
| 2017 |
Borys NJ, Barnard ES, Gao S, Yao K, Bao W, Buyanin A, Zhang Y, Tongay S, Ko C, Suh J, Weber-Bargioni A, Wu J, Yang L, Schuck PJ. Anomalous Above-Gap Photoexcitations and Optical Signatures of Localized Charge Puddles in Monolayer Molybdenum Disulfide. Acs Nano. PMID 28117983 DOI: 10.1021/Acsnano.6B08278 |
0.753 |
|
| 2017 |
Drapcho SG, Kim J, Hong X, Jin C, Shi S, Tongay S, Wu J, Wang F. Apparent breakdown of Raman selection rule at valley exciton resonances in monolayerMoS2 Physical Review B. 95. DOI: 10.1103/Physrevb.95.165417 |
0.504 |
|
| 2017 |
Wehmeyer G, Yabuki T, Monachon C, Wu J, Dames C. Thermal diodes, regulators, and switches: Physical mechanisms and potential applications Applied Physics Reviews. 4: 041304. DOI: 10.1063/1.5001072 |
0.312 |
|
| 2017 |
Liu H, Choe HS, Chen Y, Suh J, Ko C, Tongay S, Wu J. Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus Applied Physics Letters. 111: 102101. DOI: 10.1063/1.4985333 |
0.751 |
|
| 2017 |
Saha B, Peschot A, Osoba B, Ko C, Rubin L, Liu TK, Wu J. Reducing adhesion energy of micro-relay electrodes by ion beam synthesized oxide nanolayers Apl Materials. 5: 36103-36103. DOI: 10.1063/1.4978436 |
0.304 |
|
| 2016 |
Chen Y, Ke F, Ci P, Ko C, Park T, Saremi S, Liu H, Lee Y, Suh J, Martin LW, Ager JW, Chen B, Wu J. Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell. Nano Letters. PMID 27935309 DOI: 10.1021/Acs.Nanolett.6B03785 |
0.806 |
|
| 2016 |
Kim J, Khan ME, Ko JH, Kim JH, Lee ES, Suh J, Wu J, Kim YH, Park JY, Lyeo HK. Bimodal Control of Heat Transport at Graphene-Metal Interfaces Using Disorder in Graphene. Scientific Reports. 6: 34428. PMID 27698372 DOI: 10.1038/Srep34428 |
0.664 |
|
| 2016 |
Hou J, Wang X, Fu D, Ko C, Chen Y, Sun Y, Lee S, Wang KX, Dong K, Sun Y, Tongay S, Jiao L, Yao J, Liu K, Wu J. Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates. Small (Weinheim An Der Bergstrasse, Germany). PMID 27335137 DOI: 10.1002/Smll.201601021 |
0.806 |
|
| 2016 |
Fonseca JJ, Tongay S, Topsakal M, Chew AR, Lin AJ, Ko C, Luce AV, Salleo A, Wu J, Dubon OD. Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air. Advanced Materials (Deerfield Beach, Fla.). PMID 27171481 DOI: 10.1002/Adma.201601151 |
0.802 |
|
| 2016 |
Brotons-Gisbert M, Andres-Penares D, Suh J, Hidalgo F, Abargues R, Rodríguez-Cantó PJ, Segura A, Cros A, Tobias G, Canadell E, Ordejon P, Wu J, Martinez-Pastor JP, Sánchez-Royo JF. Nanotexturing to enhance photoluminescent response of atomically thin Indium Selenide with highly tunable band gap. Nano Letters. PMID 27080194 DOI: 10.1021/Acs.Nanolett.6B00689 |
0.704 |
|
| 2016 |
Ko C, Lee Y, Chen Y, Suh J, Fu D, Suslu A, Lee S, Clarkson JD, Choe HS, Tongay S, Ramesh R, Wu J. Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory. Advanced Materials (Deerfield Beach, Fla.). PMID 26894866 DOI: 10.1002/Adma.201504779 |
0.779 |
|
| 2016 |
Kim E, Ko C, Kim K, Chen Y, Suh J, Ryu SG, Wu K, Meng X, Suslu A, Tongay S, Wu J, Grigoropoulos CP. Laser-Assisted Doping: Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction (Adv. Mater. 2/2016). Advanced Materials (Deerfield Beach, Fla.). 28: 392. PMID 26749472 DOI: 10.1002/Adma.201670014 |
0.784 |
|
| 2016 |
Najmzadeh M, Ko C, Wu K, Tongay S, Wu J. Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection Applied Physics Express. 9. DOI: 10.7567/Apex.9.055201 |
0.727 |
|
| 2016 |
Dong K, Lou S, Choe HS, Liu K, You Z, Yao J, Wu J. Stress compensation for arbitrary curvature control in vanadium dioxide phase transition actuators Applied Physics Letters. 109. DOI: 10.1063/1.4958692 |
0.408 |
|
| 2016 |
Chen Y, Zhang S, Gao W, Ke F, Yan J, Saha B, Ko C, Suh J, Chen B, Ager JW, Walukiewicz W, Jeanloz R, Wu J. Pressure-induced structural transition of CdxZn1-xO alloys Applied Physics Letters. 108. DOI: 10.1063/1.4947022 |
0.67 |
|
| 2016 |
Jin C, Kim J, Suh J, Shi Z, Chen B, Fan X, Kam M, Watanabe K, Taniguchi T, Tongay S, Zettl A, Wu J, Wang F. Interlayer electron–phonon coupling in WSe2/hBN heterostructures Nature Physics. 13: 127-131. DOI: 10.1038/Nphys3928 |
0.76 |
|
| 2016 |
Scott M, Suh J, Wu J, Minor AM. Stability Studies of MAPbI
3
: Identification of Degradation Pathways and Strategies for Observing the Native Structure of Lead Halide Perovskites Microscopy and Microanalysis. 22: 1510-1511. DOI: 10.1017/S1431927616008394 |
0.689 |
|
| 2016 |
Kim JH, Fu D, Kwon S, Liu K, Wu J, Park JY. Metal-Insulator Transitions: Crossing Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide under the Metal-Insulator Transition (Adv. Mater. Interfaces 2/2016) Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201670006 |
0.694 |
|
| 2016 |
Kim JH, Fu D, Kwon S, Liu K, Wu J, Park JY. Crossing Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide under the Metal-Insulator Transition Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201500388 |
0.71 |
|
| 2016 |
Jin C, Kim J, Wu K, Chen B, Barnard ES, Suh J, Shi Z, Drapcho SG, Wu J, Schuck PJ, Tongay S, Wang F. On Optical Dipole Moment and Radiative Recombination Lifetime of Excitons in WSe2 Advanced Functional Materials. 27: 1601741. DOI: 10.1002/Adfm.201601741 |
0.788 |
|
| 2015 |
Kim E, Ko C, Kim K, Chen Y, Suh J, Ryu SG, Wu K, Meng X, Suslu A, Tongay S, Wu J, Grigoropoulos CP. Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction. Advanced Materials (Deerfield Beach, Fla.). PMID 26567761 DOI: 10.1002/Adma.201503945 |
0.786 |
|
| 2015 |
Lee S, Yang F, Suh J, Yang S, Lee Y, Li G, Sung Choe H, Suslu A, Chen Y, Ko C, Park J, Liu K, Li J, Hippalgaonkar K, Urban JJ, ... ... Wu J, et al. Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K. Nature Communications. 6: 8573. PMID 26472285 DOI: 10.1038/Ncomms9573 |
0.801 |
|
| 2015 |
Liu K, Hsin CL, Fu D, Suh J, Tongay S, Chen M, Sun Y, Yan A, Park J, Yu KM, Guo W, Zettl A, Zheng H, Chrzan DC, Wu J. Self-Passivation of Defects: Effects of High-Energy Particle Irradiation on the Elastic Modulus of Multilayer Graphene. Advanced Materials (Deerfield Beach, Fla.). PMID 26437308 DOI: 10.1002/Adma.201501752 |
0.769 |
|
| 2015 |
Kocer H, Butun S, Palacios E, Liu Z, Tongay S, Fu D, Wang K, Wu J, Aydin K. Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films. Scientific Reports. 5: 13384. PMID 26294085 DOI: 10.1038/Srep13384 |
0.767 |
|
| 2015 |
Bao W, Borys NJ, Ko C, Suh J, Fan W, Thron A, Zhang Y, Buyanin A, Zhang J, Cabrini S, Ashby PD, Weber-Bargioni A, Tongay S, Aloni S, Ogletree DF, ... Wu J, et al. Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide. Nature Communications. 6: 7993. PMID 26269394 DOI: 10.1038/Ncomms8993 |
0.751 |
|
| 2015 |
Tosun M, Fu D, Desai SB, Ko C, Seuk Kang J, Lien DH, Najmzadeh M, Tongay S, Wu J, Javey A. MoS2 Heterojunctions by Thickness Modulation. Scientific Reports. 5: 10990. PMID 26121940 DOI: 10.1038/Srep10990 |
0.742 |
|
| 2015 |
Suh J, Yu KM, Fu D, Liu X, Yang F, Fan J, Smith DJ, Zhang YH, Furdyna JK, Dames C, Walukiewicz W, Wu J. Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi₂Te₃ by Multifunctionality of Native Defects. Advanced Materials (Deerfield Beach, Fla.). 27: 3681-6. PMID 25974062 DOI: 10.1002/Adma.201501350 |
0.788 |
|
| 2015 |
Lee Y, Liu ZQ, Heron JT, Clarkson JD, Hong J, Ko C, Biegalski MD, Aschauer U, Hsu SL, Nowakowski ME, Wu J, Christen HM, Salahuddin S, Bokor JB, Spaldin NA, et al. Large resistivity modulation in mixed-phase metallic systems. Nature Communications. 6: 5959. PMID 25564764 DOI: 10.1038/Ncomms6959 |
0.368 |
|
| 2015 |
Liu K, Wu J. Mechanical properties of two-dimensional materials and heterostructures Journal of Materials Research. DOI: 10.1557/Jmr.2015.324 |
0.416 |
|
| 2015 |
Fan W, Zhu X, Ke F, Chen Y, Dong K, Ji J, Chen B, Tongay S, Ager JW, Liu K, Su H, Wu J. Vibrational spectrum renormalization by enforced coupling across the van der Waals gap between Mo S 2 and W S 2 monolayers Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.241408 |
0.558 |
|
| 2015 |
Latzke DW, Zhang W, Suslu A, Chang TR, Lin H, Jeng HT, Tongay S, Wu J, Bansil A, Lanzara A. Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2 Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.235202 |
0.562 |
|
| 2015 |
Bai L, Li Q, Corr SA, Meng Y, Park C, Sinogeikin SV, Ko C, Wu J, Shen G. Pressure-induced phase transitions and metallization in VO2 Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.104110 |
0.354 |
|
| 2015 |
Park TE, Suh J, Seo D, Park J, Lin DY, Huang YS, Choi HJ, Wu J, Jang C, Chang J. Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition Applied Physics Letters. 107. DOI: 10.1063/1.4936571 |
0.685 |
|
| 2015 |
Kocer H, Butun S, Banar B, Wang K, Tongay S, Wu J, Aydin K. Thermal tuning of infrared resonant absorbers based on hybrid gold-VO2 nanostructures Applied Physics Letters. 106. DOI: 10.1063/1.4918938 |
0.495 |
|
| 2015 |
Cheng C, Fu D, Liu K, Guo H, Xu S, Ryu SG, Ho O, Zhou J, Fan W, Bao W, Salmeron M, Wang N, Grigoropoulos CP, Wu J. Directly metering light absorption and heat transfer in single nanowires using metal-insulator transition in VO2 Advanced Optical Materials. 3: 336-341. DOI: 10.1002/Adom.201400483 |
0.76 |
|
| 2014 |
Suh J, Park TE, Lin DY, Fu D, Park J, Jung HJ, Chen Y, Ko C, Jang C, Sun Y, Sinclair R, Chang J, Tongay S, Wu J. Doping against the native propensity of MoS2: degenerate hole doping by cation substitution. Nano Letters. 14: 6976-82. PMID 25420217 DOI: 10.1021/Nl503251H |
0.809 |
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| 2014 |
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0.483 |
|
| 2005 |
Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Fermi-level stabilization energy in group III nitrides Physical Review B. 71. DOI: 10.1103/Physrevb.71.161201 |
0.629 |
|
| 2005 |
Li SX, Haller EE, Yu KM, Walukiewicz W, Ager JW, Wu J, Shan W, Lu H, Schaff WJ. Effect of native defects on optical properties of InxGa1−xN alloys Applied Physics Letters. 87: 161905. DOI: 10.1063/1.2108118 |
0.637 |
|
| 2005 |
Johnson MC, Liliental-Weber Z, Zakharov DN, Mccready DE, Jorgenson RJ, Wu J, Shan W, Bourret-Courchesne ED. Investigation of microstructure and V-defect formation in InxGa1-xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition Journal of Electronic Materials. 34: 605-611. DOI: 10.1007/S11664-005-0072-Y |
0.371 |
|
| 2004 |
Shan W, Walukiewicz W, Yu KM, Ager JW, Wu J, Beeman J, Scapulla MA, Dubon OD, Haller EE, Nabetani Y, Becla P. Effect of oxygen on the electronic band structure of II-O-VI alloys Proceedings of Spie - the International Society For Optical Engineering. 5349: 426-434. DOI: 10.1117/12.529297 |
0.621 |
|
| 2004 |
Wu J, Walukiewicz W, Shan W, Bourret-Courchesne E, Ager JW, Yu KM, Haller EE, Kissell K, Bachilo SM, Weisman RB, Smalley RE. Structure-dependent hydrostatic deformation potentials of individual single-walled carbon nanotubes Physical Review Letters. 93: 017404-1. DOI: 10.1103/Physrevlett.93.017404 |
0.446 |
|
| 2004 |
Wu J, Walukiewicz W, Yu KM, Denlinger JD, Shan W, Ager JW, Kimura A, Tang HF, Kuech TF. Valence band hybridization inN-richGaN1−xAsxalloys Physical Review B. 70. DOI: 10.1103/Physrevb.70.115214 |
0.361 |
|
| 2004 |
Shan W, Yu KM, Walukiewicz W, Wu J, Ager JW, Haller EE. Band anticrossing in dilute nitrides Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/31/024 |
0.515 |
|
| 2004 |
Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Synthesis and optical properties of II-O-VI highly mismatched alloys Journal of Applied Physics. 95: 6232-6238. DOI: 10.1063/1.1713021 |
0.553 |
|
| 2004 |
Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853 |
0.641 |
|
| 2004 |
Fareed RSQ, Jain R, Gaska R, Shur MS, Wu J, Walukiewicz W, Khan MA. High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition Applied Physics Letters. 84: 1892-1894. DOI: 10.1063/1.1686889 |
0.383 |
|
| 2004 |
Shan W, Yu KM, Walukiewicz W, Beeman JW, Wu J, Ager JW, Scarpulla MA, Dubon OD, Haller EE. Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys Applied Physics Letters. 84: 924-926. DOI: 10.1063/1.1646457 |
0.667 |
|
| 2004 |
Shan W, Walukiewicz W, Ager JW, Yu KM, Wu J, Haller EE. Pressure dependence of the fundamental band-gap energy of CdSe Applied Physics Letters. 84: 67-69. DOI: 10.1063/1.1638879 |
0.333 |
|
| 2004 |
Wu J, Han W, Walukiewicz W, Ager JW, Shan W, Haller EE, Zettl A. Raman Spectroscopy and Time-Resolved Photoluminescence of BN and BxCyNzNanotubes Nano Letters. 4: 647-650. DOI: 10.1021/Nl049862E |
0.469 |
|
| 2004 |
Walukiewicz W, Li S, Wu J, Yu K, Ager J, Haller E, Lu H, Schaff WJ. Optical properties and electronic structure of InN and In-rich group III-nitride alloys Journal of Crystal Growth. 269: 119-127. DOI: 10.1016/J.Jcrysgro.2004.05.041 |
0.67 |
|
| 2004 |
Johnson MC, Jorgenson RJ, Wu J, Shan W, Bourret-Courchesne E. Growth and characterization of InxGa1-xN MQW using a novel method of temperature gradient OMVPE Journal of Crystal Growth. 261: 44-49. DOI: 10.1016/J.Jcrysgro.2003.09.020 |
0.365 |
|
| 2004 |
Shan W, Wu J, Walukiewicz W, Ager JW, Yu KM, Haller EE, Kissell K, Bachilo SM, Weisman RB, Smalley RE. Pressure dependence of optical transitions in semiconducting single-walled carbon nanotubes Physica Status Solidi (B) Basic Research. 241: 3367-3373. DOI: 10.1002/Pssb.200405250 |
0.485 |
|
| 2004 |
Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys Physica Status Solidi (B). 241: 3107-3112. DOI: 10.1002/Pssb.200405232 |
0.637 |
|
| 2004 |
Shan W, Walukiewicz W, Wu J, Yu KM, Ager JW, Siebentritt S, Rega N. Pressure‐dependent photoluminescence study of CuGaSe2 Physica Status Solidi B-Basic Solid State Physics. 241: 3117-3122. DOI: 10.1002/Pssb.200405223 |
0.317 |
|
| 2004 |
Shan W, Walukiewicz W, Ager III JW, Yu KM, Wu J, Haller EE, Nabetani Y. Oxygen induced band-gap reduction in ZnOxSe1−x alloys Physica Status Solidi (B). 241: 603-606. DOI: 10.1002/Pssb.200304168 |
0.514 |
|
| 2004 |
Yu KM, Walukiewicz W, Wu J, Shan W, Scarpulla MA, Dubon OD, Beeman JW, Becla P. Diluted ZnMnTe oxide: A multi-band semiconductor for high efficiency solar cells Physica Status Solidi (B) Basic Research. 241: 660-663. DOI: 10.1002/Pssb.200304167 |
0.61 |
|
| 2003 |
Yu KM, Walukiewicz W, Wu J, Shan W, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Diluted II-VI oxide semiconductors with multiple band gaps. Physical Review Letters. 91: 246403. PMID 14683137 DOI: 10.1103/Physrevlett.91.246403 |
0.601 |
|
| 2003 |
Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ. Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y12.9 |
0.463 |
|
| 2003 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Miotkowski I, Ramdas AK, Su C, Sou IK, Perera RCC, Denlinger JD. Origin of the large band-gap bowing in highly mismatched semiconductor alloys Physical Review B. 67. DOI: 10.1103/Physrevb.67.035207 |
0.5 |
|
| 2003 |
Li SX, Wu J, Haller EE, Walukiewicz W, Shan W, Lu H, Schaff WJ. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys Applied Physics Letters. 83: 4963-4965. DOI: 10.1063/1.1633681 |
0.605 |
|
| 2003 |
Wu J, Walukiewicz W, Yu KM, Shan W, Ager JW, Haller EE, Lu H, Schaff WJ, Metzger WK, Kurtz S. Superior radiation resistance of In 1-xGa xN alloys: Full-solar-spectrum photovoltaic material system Journal of Applied Physics. 94: 6477-6482. DOI: 10.1063/1.1618353 |
0.448 |
|
| 2003 |
Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Li SX, Haller EE, Lu H, Schaff WJ. Temperature dependence of the fundamental band gap of InN Journal of Applied Physics. 94: 4457-4460. DOI: 10.1063/1.1605815 |
0.662 |
|
| 2003 |
Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Cimalla V, Ambacher O. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy Applied Physics Letters. 83: 1136-1138. DOI: 10.1063/1.1599634 |
0.338 |
|
| 2003 |
Shan W, Walukiewicz W, Ager JW, Yu KM, Wu J, Haller EE, Nabetani Y, Mukawa T, Ito Y, Matsumoto T. Effect of oxygen on the electronic band structure in ZnOxSe1−x alloys Applied Physics Letters. 83: 299-301. DOI: 10.1063/1.1592885 |
0.373 |
|
| 2003 |
Yu KM, Walukiewicz W, Scarpulla MA, Dubon OD, Wu J, Jasinski J, Liliental-Weber Z, Beeman JW, Pillai MR, Aziz MJ. Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs Journal of Applied Physics. 94: 1043-1049. DOI: 10.1063/1.1582393 |
0.573 |
|
| 2003 |
Ng HT, Chen B, Li J, Han J, Meyyappan M, Wu J, Li SX, Haller EE. Optical properties of single-crystalline ZnO nanowires on m-sapphire Applied Physics Letters. 82: 2023-2025. DOI: 10.1063/1.1564870 |
0.536 |
|
| 2003 |
Shan W, Walukiewicz W, Wu J, Yu KM, Ager JW, Li SX, Haller EE, Geisz JF, Friedman DJ, Kurtz SR. Band-gap bowing effects in BxGa1−xAs alloys Journal of Applied Physics. 93: 2696-2699. DOI: 10.1063/1.1540230 |
0.51 |
|
| 2003 |
Wu J, Walukiewicz W, Yu K, Ager J, Li S, Haller E, Lu H, Schaff WJ. Universal bandgap bowing in group-III nitride alloys Solid State Communications. 127: 411-414. DOI: 10.1016/S0038-1098(03)00457-5 |
0.625 |
|
| 2003 |
Wu J, Walukiewicz W. Band gaps of InN and group III nitride alloys Superlattices and Microstructures. 34: 63-75. DOI: 10.1016/J.Spmi.2004.03.069 |
0.334 |
|
| 2003 |
Wu J, Walukiewicz W, Yu KM, Ager III JW, Haller EE, Lu H, Schaff WJ. Narrow bandgap group III-nitride alloys Physica Status Solidi (B). 240: 412-416. DOI: 10.1002/Pssb.200303475 |
0.482 |
|
| 2002 |
Yu KM, Walukiewicz W, Wu J, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Geisz JF. Mutual passivation of electrically active and isovalent impurities. Nature Materials. 1: 185-9. PMID 12618808 DOI: 10.1038/Nmat754 |
0.763 |
|
| 2002 |
Wu J. Band anticrossing effects in highly mismatched semiconductor alloys Lawrence Berkeley National Laboratory. DOI: 10.2172/806122 |
0.409 |
|
| 2002 |
Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Look DC, Molnar RJ. Growth of thick InN by molecular beam epitaxy Materials Research Society Symposium - Proceedings. 743: 317-322. DOI: 10.1557/Proc-743-L4.10 |
0.326 |
|
| 2002 |
Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Effects of the narrow band gap on the properties of InN Physical Review B. 66. DOI: 10.1103/Physrevb.66.201403 |
0.503 |
|
| 2002 |
Wu J, Walukiewicz W, Haller EE. Band structure of highly mismatched semiconductor alloys: Coherent potential approximation Physical Review B. 65. DOI: 10.1103/Physrevb.65.233210 |
0.498 |
|
| 2002 |
Wu J, Shan W, Walukiewicz W. Band anticrossing in highly mismatched III-V semiconductor alloys Semiconductor Science and Technology. 17: 860-869. DOI: 10.1088/0268-1242/17/8/315 |
0.362 |
|
| 2002 |
Hwang J, Schaff WJ, Eastman LF, Bradley ST, Brillson LJ, Look DC, Wu J, Walukiewicz W, Furis M, Cartwright AN. Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy Applied Physics Letters. 81: 5192-5194. DOI: 10.1063/1.1534395 |
0.333 |
|
| 2002 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Small band gap bowing in In1-xGaxN alloys Applied Physics Letters. 80: 4741-4743. DOI: 10.1063/1.1489481 |
0.511 |
|
| 2002 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Unusual properties of the fundamental band gap of InN Applied Physics Letters. 80: 3967-3969. DOI: 10.1063/1.1482786 |
0.508 |
|
| 2002 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Shan W, Haller EE, Miotkowski I, Ramdas AK, Miotkowska S. Band anticrossing effects in MgyZn1−yTe1−xSex alloys Applied Physics Letters. 80: 34-36. DOI: 10.1063/1.1430853 |
0.505 |
|
| 2002 |
Yu KM, Wu J, Walukiewicz W, Beeman JW, Ager JW, Haller EE, Miotkowski I, Ramdas A. Band anticrossing in highly mismatched group II-VI semiconductor alloys Journal of Electronic Materials. 31: 754-758. DOI: 10.1007/S11664-002-0232-2 |
0.44 |
|
| 2001 |
Wu J, Shan W, Walukiewicz W, Yu KM, Ager JW, Haller EE, Xin HP, Tu CW. Effect of band anticrossing on the optical transitions inGaAs1−xNx/GaAsmultiple quantum wells Physical Review B. 64. DOI: 10.1103/Physrevb.64.085320 |
0.488 |
|
| 2001 |
Yu KM, Walukiewicz W, Wu J, Beeman JW, Ager JW, Haller EE, Shan W, Xin HP, Tu CW, Ridgway MC. Formation of diluted III–V nitride thin films by N ion implantation Journal of Applied Physics. 90: 2227-2234. DOI: 10.1063/1.1388860 |
0.428 |
|
| 2001 |
Wu J, Walukiewicz W, Haller EE. Calculation of the ground state of shallow donors in GaAs1-xNx Journal of Applied Physics. 89: 789-791. DOI: 10.1063/1.1324999 |
0.466 |
|
| 2000 |
Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Ager JW, Haller EE, Ridgway MC. Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation Mrs Proceedings. 650. DOI: 10.1557/Proc-650-R8.3/O13.3 |
0.443 |
|
| 2000 |
Yu KM, Walukiewicz W, Shan W, Ager JW, Wu J, Haller EE, Geisz JF, Friedman DJ, Olson JM. Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys Physical Review B. 61: R13337-R13340. DOI: 10.1103/Physrevb.61.R13337 |
0.494 |
|
| 2000 |
Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Ager JW, Haller EE. Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs Applied Physics Letters. 77: 3607-3609. DOI: 10.1063/1.1328766 |
0.505 |
|
| 2000 |
Shan W, Walukiewicz W, Yu KM, Wu J, Ager JW, Haller EE, Xin HP, Tu CW. Nature of the fundamental band gap in GaNxP1−x alloys Applied Physics Letters. 76: 3251-3253. DOI: 10.1063/1.126597 |
0.375 |
|
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