Eric J. Stewart, Ph.D. - Publications
Affiliations: | 2004 | Princeton University, Princeton, NJ |
Area:
Biological & Biomedical,Energy & Environment,Materials & Devices,NanotechnologiesYear | Citation | Score | |||
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2005 | Stewart EJ, Carroll MS, Sturm JC. Boron segregation in single-crystal Si1-x-yGexC y and Si1-yCy alloys Journal of the Electrochemical Society. 152: G500-G505. DOI: 10.1149/1.1915209 | 0.578 | |||
2004 | Stewart EJ, Carroll MS, Sturm JC. Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys Journal of Applied Physics. 95: 4029-4035. DOI: 10.1063/1.1649452 | 0.542 | |||
2004 | Stewart EJ, Sturm JC. Segregation of boron to polycrystalline and single-crystal Si 1-x-yGexCy and Si1-yCy layers Applied Surface Science. 224: 87-90. DOI: 10.1016/j.apsusc.2003.08.044 | 0.476 | |||
2003 | Stewart EJ, Sturm JC. Boron segregation and out-diffusion in single-crystal Si1-yCy Materials Research Society Symposium - Proceedings. 765: 223-228. | 0.336 | |||
2001 | Stewart EJ, Carroll MS, Sturm JC. Boron segregation and electrical properties in polycrystalline SiGeC Materials Research Society Symposium - Proceedings. 669: J691-J696. DOI: 10.1557/Proc-669-J6.9 | 0.569 | |||
2001 | Stewart EJ, Carroll MS, Sturm JC. Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers Ieee Electron Device Letters. 22: 574-576. DOI: 10.1109/55.974581 | 0.574 | |||
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