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Peter G. Burke, Ph.D. - Publications

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Mohammed AM, Koh YR, Vermeersch B, Lu H, Burke PG, Gossard AC, Shakouri A. Fractal Lévy Heat Transport in Nanoparticle Embedded Semiconductor Alloys. Nano Letters. 15: 4269-73. PMID 25654652 DOI: 10.1021/Nl5044665  0.329
2015 Ziabari A, Bahk JH, Xuan Y, Ye PD, Kendig D, Yazawa K, Burke PG, Lu H, Gossard AC, Shakouri A. Sub-diffraction limit thermal imaging for HEMT devices Annual Ieee Semiconductor Thermal Measurement and Management Symposium. 2015: 82-87. DOI: 10.1109/SEMI-THERM.2015.7100144  0.572
2015 Burke PG, Curtin BM, Bowers JE, Gossard AC. Minority carrier barrier heterojunctions for improved thermoelectric efficiency Nano Energy. 12: 735-741. DOI: 10.1016/J.Nanoen.2015.01.037  0.724
2014 Wang H, Bahk JH, Kang C, Hwang J, Kim K, Kim J, Burke P, Bowers JE, Gossard AC, Shakouri A, Kim W. Right sizes of nano- and microstructures for high-performance and rigid bulk thermoelectrics. Proceedings of the National Academy of Sciences of the United States of America. 111: 10949-54. PMID 25028497 DOI: 10.1073/Pnas.1403601111  0.684
2014 Lu H, Ouellette DG, Preu S, Watts JD, Zaks B, Burke PG, Sherwin MS, Gossard AC. Self-assembled ErSb nanostructures with optical applications in infrared and terahertz. Nano Letters. 14: 1107-12. PMID 24206535 DOI: 10.1021/Nl402436G  0.34
2014 Kaun SW, Ahmadi E, Mazumder B, Wu F, Kyle ECH, Burke PG, Mishra UK, Speck JS. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/4/045011  0.366
2014 Favaloro T, Ziabari A, Bahk JH, Burke P, Lu H, Bowers J, Gossard A, Bian Z, Shakouri A. High temperature thermoreflectance imaging and transient Harman characterization of thermoelectric energy conversion devices Journal of Applied Physics. 116. DOI: 10.1063/1.4885198  0.696
2014 Kyle ECH, Kaun SW, Burke PG, Wu F, Wu YR, Speck JS. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Journal of Applied Physics. 115. DOI: 10.1063/1.4874735  0.422
2012 Kaun SW, Burke PG, Hoi Wong M, Kyle ECH, Mishra UK, Speck JS. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4773510  0.391
2012 Burke PG, Ismer L, Lu H, Frantz E, Janotti A, Van De Walle CG, Bowers JE, Gossard AC. Electrically active Er doping in InAs, In0.53Ga 0.47As, and GaAs Applied Physics Letters. 101. DOI: 10.1063/1.4769248  0.491
2012 Hurni CA, Lang JR, Burke PG, Speck JS. Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4751108  0.372
2012 Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO. Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites Journal of Applied Physics. 111. DOI: 10.1063/1.4711095  0.484
2012 Preu S, Kim S, Verma R, Burke PG, Sherwin MS, Gossard AC. An improved model for non-resonant terahertz detection in field-effect transistors Journal of Applied Physics. 111. DOI: 10.1063/1.3676211  0.336
2012 Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC. Controlling n-type carrier density from Er doping of InGaAs with MBE growth temperature Journal of Electronic Materials. 41: 948-953. DOI: 10.1007/S11664-012-2050-5  0.497
2011 Lu H, Burke PG, Gossard AC, Zeng G, Ramu AT, Bahk JH, Bowers JE. Semimetal/semiconductor nanocomposites for thermoelectrics. Advanced Materials (Deerfield Beach, Fla.). 23: 2377-83. PMID 21751469 DOI: 10.1002/Adma.201100449  0.699
2011 Pernot G, Michel H, Vermeersch B, Burke P, Lu H, Rampnoux JM, Dilhaire S, Ezzahri Y, Gossard A, Shakouri A. Frequency-dependent thermal conductivity in time domain thermoreflectance analysis of thin films Materials Research Society Symposium Proceedings. 1347: 1-7. DOI: 10.1557/Opl.2011.1277  0.38
2011 Burke PG, Lu H, Rudawski NG, Stemmer S, Gossard AC, Bahk JH, Bowers JE. Electrical properties of Er-doped In0.53Ga0.47As Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3559480  0.697
2011 Cassels LE, Buehl TE, Burke PG, Palmstrøm CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO. Growth and characterization of TbAs:GaAs nanocomposites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3555388  0.474
2011 Liu X, Ramu AT, Bowers JE, Palmstrøm CJ, Burke PG, Lu H, Gossard AC. Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications Journal of Crystal Growth. 316: 56-59. DOI: 10.1016/J.Jcrysgro.2010.09.078  0.708
2010 Xu D, Feser JP, Zhao Y, Lu H, Burke P, Gossard AC, Majumdar A. Thermal conductivity characterization and modeling of p-type metal/semiconductor nanocomposites 2010 14th International Heat Transfer Conference, Ihtc 14. 6: 525-529. DOI: 10.1115/IHTC14-23298  0.314
2010 Bahk JH, Zeng G, Zide JMO, Lu H, Singh R, Liang D, Ramu AT, Burke P, Bian Z, Gossard AC, Shakouri A, Bowers JE. High-temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding Journal of Electronic Materials. 39: 1125-1132. DOI: 10.1007/S11664-010-1258-5  0.71
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