| Year |
Citation |
Score |
| 2023 |
Geng Y, Luo J, van Deurzen L, Xing HG, Jena D, Fuchs GD, Rana F. Dephasing by optical phonons in GaN defect single-photon emitters. Scientific Reports. 13: 8678. PMID 37248283 DOI: 10.1038/s41598-023-35003-z |
0.467 |
|
| 2022 |
Zhang Z, Hayashi Y, Tohei T, Sakai A, Protasenko V, Singhal J, Miyake H, Xing HG, Jena D, Cho Y. Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning. Science Advances. 8: eabo6408. PMID 36083903 DOI: 10.1126/sciadv.abo6408 |
0.485 |
|
| 2021 |
Yu T, Wright J, Khalsa G, Pamuk B, Chang CS, Matveyev Y, Wang X, Schmitt T, Feng D, Muller DA, Xing HG, Jena D, Strocov VN. Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction. Science Advances. 7: eabi5833. PMID 34936435 DOI: 10.1126/sciadv.abi5833 |
0.491 |
|
| 2021 |
Dang P, Khalsa G, Chang CS, Katzer DS, Nepal N, Downey BP, Wheeler VD, Suslov A, Xie A, Beam E, Cao Y, Lee C, Muller DA, Xing HG, Meyer DJ, et al. An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity. Science Advances. 7. PMID 33608281 DOI: 10.1126/sciadv.abf1388 |
0.518 |
|
| 2021 |
Jinno R, Chang CS, Onuma T, Cho Y, Ho ST, Rowe D, Cao MC, Lee K, Protasenko V, Schlom DG, Muller DA, Xing HG, Jena D. Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)O on m-plane sapphire. Science Advances. 7. PMID 33523991 DOI: 10.1126/sciadv.abd5891 |
0.449 |
|
| 2020 |
Khan I, Fang Z, Palei M, Lu J, Nordin L, Simmons EL, Dominguez O, Islam SM, Xing HG, Jena D, Podolskiy VA, Wasserman D, Hoffman AJ. Engineering the Berreman mode in mid-infrared polar materials. Optics Express. 28: 28590-28599. PMID 32988126 DOI: 10.1364/Oe.401733 |
0.433 |
|
| 2020 |
Bharadwaj S, Miller J, Lee K, Lederman J, Siekacz M, Xing HG, Jena D, Skierbiszewski C, Turski H. Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes. Optics Express. 28: 4489-4500. PMID 32121684 DOI: 10.1364/Oe.384021 |
0.545 |
|
| 2020 |
Li L, Nomoto K, Pan M, Li W, Hickman A, Miller J, Lee K, Hu Z, Bader SJ, Lee SM, Hwang JCM, Jena D, Xing HG. GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz Ieee Electron Device Letters. 41: 689-692. DOI: 10.1109/Led.2020.2984727 |
0.514 |
|
| 2020 |
Li W, Nomoto K, Hu Z, Jena D, Xing HG. Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2 Ieee Electron Device Letters. 41: 107-110. DOI: 10.1109/Led.2019.2953559 |
0.459 |
|
| 2020 |
Encomendero J, Protasenko V, Rana F, Jena D, Xing HG. Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics Physical Review Applied. 13. DOI: 10.1103/Physrevapplied.13.034048 |
0.469 |
|
| 2020 |
Li W, Saraswat D, Long Y, Nomoto K, Jena D, Xing HG. Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes Applied Physics Letters. 116: 192101. DOI: 10.1063/5.0007715 |
0.503 |
|
| 2020 |
Cho Y, Chang CS, Lee K, Gong M, Nomoto K, Toita M, Schowalter LJ, Muller DA, Jena D, Xing HG. Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning Applied Physics Letters. 116: 172106. DOI: 10.1063/1.5143968 |
0.459 |
|
| 2020 |
Park J, Paik H, Nomoto K, Lee K, Park B, Grisafe B, Wang L, Salahuddin S, Datta S, Kim Y, Jena D, Xing HG, Schlom DG. Fully transparent field-effect transistor with high drain current and on-off ratio Apl Materials. 8: 011110. DOI: 10.1063/1.5133745 |
0.535 |
|
| 2020 |
Chaney A, Turski H, Nomoto K, Hu Z, Encomendero J, Rouvimov S, Orlova T, Fay P, Seabaugh A, Xing HG, Jena D. Gallium nitride tunneling field-effect transistors exploiting polarization fields Applied Physics Letters. 116: 073502. DOI: 10.1063/1.5132329 |
0.568 |
|
| 2020 |
Zhang Z, Cho Y, Singhal J, Li X, Dang P, Lee H, Casamento J, Tang Y, Xing HG, Jena D. Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates Aip Advances. 10: 015238. DOI: 10.1063/1.5130485 |
0.448 |
|
| 2020 |
Casamento J, Xing HG, Jena D. Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc
x
Ga
1−
x
N and Sc
x
Al
1−
x
N Physica Status Solidi (B). 257: 1900612. DOI: 10.1002/Pssb.201900612 |
0.39 |
|
| 2020 |
Chaudhuri R, Bader SJ, Chen Z, Muller D, Xing HG, Jena D. Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures Physica Status Solidi (B). 257: 1900567. DOI: 10.1002/Pssb.201900567 |
0.442 |
|
| 2020 |
Miller J, Wright J, Xing HG, Jena D. All‐Epitaxial Bulk Acoustic Wave Resonators Physica Status Solidi (a). 217: 1900786. DOI: 10.1002/Pssa.201900786 |
0.379 |
|
| 2020 |
Meneghini M, Fabris E, Ruzzarin M, De Santi C, Nomoto K, Hu Z, Li W, Gao X, Jena D, Xing HG, Sun M, Palacios T, Meneghesso G, Zanoni E. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review Physica Status Solidi (a). 217: 1900750. DOI: 10.1002/Pssa.201900750 |
0.453 |
|
| 2019 |
Chaudhuri R, Bader SJ, Chen Z, Muller DA, Xing HG, Jena D. A polarization-induced 2D hole gas in undoped gallium nitride quantum wells. Science (New York, N.Y.). 365: 1454-1457. PMID 31604274 DOI: 10.1126/Science.Aau8623 |
0.491 |
|
| 2019 |
Li W, Nomoto K, Hu Z, Jena D, Xing HG. Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes Applied Physics Express. 12: 061007. DOI: 10.7567/1882-0786/Ab206C |
0.466 |
|
| 2019 |
Yan R, Khalsa G, Schaefer BT, Jarjour A, Rouvimov S, Nowack KC, Xing HG, Jena D. Thickness dependence of superconductivity in ultrathin NbS2 Applied Physics Express. 12: 023008. DOI: 10.7567/1882-0786/Aaff89 |
0.481 |
|
| 2019 |
Cho Y, Bharadwaj S, Hu Z, Nomoto K, Jahn U, Xing HG, Jena D. Blue (In,Ga)N light-emitting diodes with buried n +–p + tunnel junctions by plasma-assisted molecular beam epitaxy Japanese Journal of Applied Physics. 58: 060914. DOI: 10.7567/1347-4065/Ab1E78 |
0.531 |
|
| 2019 |
Jena D, Page R, Casamento J, Dang P, Singhal J, Zhang Z, Wright J, Khalsa G, Cho Y, Xing HG. The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system Japanese Journal of Applied Physics. 58: SC0801. DOI: 10.7567/1347-4065/Ab147B |
0.528 |
|
| 2019 |
Li W, Nomoto K, Sundar A, Lee K, Zhu M, Hu Z, Beam E, Xie J, Pilla M, Gao X, Rouvimov S, Jena D, Xing HG. Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms Japanese Journal of Applied Physics. 58: SCCD15. DOI: 10.7567/1347-4065/Ab0F1B |
0.44 |
|
| 2019 |
Turski H, Siekacz M, Muzioł G, Hajdel M, Stańczyk S, Żak M, Chlipała M, Skierbiszewski C, Bharadwaj S, Xing HG, Jena D. Nitride LEDs and Lasers with Buried Tunnel Junctions Ecs Journal of Solid State Science and Technology. 9: 015018. DOI: 10.1149/2.0412001Jss |
0.412 |
|
| 2019 |
Xing HG, Deen D, Cao Y, Zimmermann T, Fay P, Jena D. MBE-Grown Ultra-shallow AlN/GaN HFET Technology Ecs Transactions. 11: 233-237. DOI: 10.1149/1.2783877 |
0.446 |
|
| 2019 |
Fabris E, Meneghesso G, Zanoni E, Meneghini M, De Santi C, Caria A, Nomoto K, Hu Z, Li W, Gao X, Jena D, Xing HG. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes Ieee Transactions On Electron Devices. 66: 4597-4603. DOI: 10.1109/Ted.2019.2943014 |
0.535 |
|
| 2019 |
Hickman A, Chaudhuri R, Bader SJ, Nomoto K, Lee K, Xing HG, Jena D. High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs Ieee Electron Device Letters. 40: 1293-1296. DOI: 10.1109/Led.2019.2923085 |
0.566 |
|
| 2019 |
Afuye O, Li X, Guo F, Jena D, Ralph DC, Molnar A, Xing HG, Apsel A. Modeling and Circuit Design of Associative Memories With Spin–Orbit Torque FETs Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 5: 197-205. DOI: 10.1109/Jxcdc.2019.2952394 |
0.498 |
|
| 2019 |
Page R, Casamento J, Cho Y, Rouvimov S, Xing HG, Jena D. Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.064001 |
0.518 |
|
| 2019 |
Encomendero J, Protasenko V, Sensale-Rodriguez B, Fay P, Rana F, Jena D, Xing HG. Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.034032 |
0.672 |
|
| 2019 |
Casamento J, Wright J, Chaudhuri R, Xing H(, Jena D. Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN Applied Physics Letters. 115: 172101. DOI: 10.1063/1.5121329 |
0.519 |
|
| 2019 |
Dang P, Rouvimov S, Xing HG, Jena D. Magnetotransport and superconductivity in InBi films grown on Si(111) by molecular beam epitaxy Journal of Applied Physics. 126: 103901. DOI: 10.1063/1.5109542 |
0.437 |
|
| 2019 |
Cheng Z, Tanen N, Chang C, Shi J, McCandless J, Muller D, Jena D, Xing HG, Graham S. Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/Ga2O3 superlattices Applied Physics Letters. 115: 092105. DOI: 10.1063/1.5108757 |
0.486 |
|
| 2019 |
Bader SJ, Chaudhuri R, Schubert MF, Then HW, Xing HG, Jena D. Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas Applied Physics Letters. 114: 253501. DOI: 10.1063/1.5099957 |
0.492 |
|
| 2019 |
Xu RL, Muñoz Rojo M, Islam SM, Sood A, Vareskic B, Katre A, Mingo N, Goodson KE, Xing HG, Jena D, Pop E. Thermal conductivity of crystalline AlN and the influence of atomic-scale defects Journal of Applied Physics. 126: 185105. DOI: 10.1063/1.5097172 |
0.452 |
|
| 2019 |
Turski H, Krzyżewski F, Feduniewicz-Żmuda A, Wolny P, Siekacz M, Muziol G, Cheze C, Nowakowski-Szukudlarek K, Xing H(, Jena D, Załuska-Kotur M, Skierbiszewski C. Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface Applied Surface Science. 484: 771-780. DOI: 10.1016/J.Apsusc.2019.04.082 |
0.501 |
|
| 2018 |
Yan R, Khalsa G, Vishwanath S, Han Y, Wright J, Rouvimov S, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D. GaN/NbN epitaxial semiconductor/superconductor heterostructures. Nature. 555: 183-189. PMID 29516996 DOI: 10.1038/Nature25768 |
0.568 |
|
| 2018 |
Li W, Xing HG, Nomoto K, Lee K, Islam S, Hu Z, Zhu M, Gao X, Pilla M, Jena D. Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel Ieee Transactions On Electron Devices. 65: 2558-2564. DOI: 10.1109/Ted.2018.2829125 |
0.506 |
|
| 2018 |
Verma A, Song B, Downey B, Wheeler VD, Meyer DJ, Xing HG, Jena D. Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO2 Ieee Transactions On Electron Devices. 65: 945-949. DOI: 10.1109/Ted.2018.2795105 |
0.527 |
|
| 2018 |
Bader SJ, Chaudhuri R, Nomoto K, Hickman A, Chen Z, Then HW, Muller DA, Xing HG, Jena D. Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas Ieee Electron Device Letters. 39: 1848-1851. DOI: 10.1109/Led.2018.2874190 |
0.559 |
|
| 2018 |
Hu Z, Nomoto K, Li W, Tanen N, Sasaki K, Kuramata A, Nakamura T, Jena D, Xing HG. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV Ieee Electron Device Letters. 39: 869-872. DOI: 10.1109/Led.2018.2830184 |
0.531 |
|
| 2018 |
Li W, Hu Z, Nomoto K, Zhang Z, Hsu J, Thieu QT, Sasaki K, Kuramata A, Jena D, Xing HG. 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2 Applied Physics Letters. 113: 202101. DOI: 10.1063/1.5052368 |
0.547 |
|
| 2018 |
Li W, Nomoto K, Lee K, Islam SM, Hu Z, Zhu M, Gao X, Xie J, Pilla M, Jena D, Xing HG. Activation of buried p-GaN in MOCVD-regrown vertical structures Applied Physics Letters. 113: 062105. DOI: 10.1063/1.5041879 |
0.504 |
|
| 2018 |
Hu Z, Nomoto K, Li W, Zhang Z, Tanen N, Thieu QT, Sasaki K, Kuramata A, Nakamura T, Jena D, Xing HG. Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Applied Physics Letters. 113: 122103. DOI: 10.1063/1.5038105 |
0.517 |
|
| 2018 |
Condori Quispe HO, Chanana A, Encomendero J, Zhu M, Trometer N, Nahata A, Jena D, Xing HG, Sensale-Rodriguez B. Comparison of unit cell coupling for grating‐gate and high electron mobility transistor array THz resonant absorbers Journal of Applied Physics. 124: 093101. DOI: 10.1063/1.5032102 |
0.712 |
|
| 2018 |
Encomendero J, Yan R, Verma A, Islam SM, Protasenko V, Rouvimov S, Fay P, Jena D, Xing HG. Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2 Applied Physics Letters. 112: 103101. DOI: 10.1063/1.5016414 |
0.525 |
|
| 2018 |
Vishwanath S, Sundar A, Liu X, Azcatl A, Lochocki E, Woll AR, Rouvimov S, Hwang WS, Lu N, Peng X, Lien H, Weisenberger J, McDonnell S, Kim MJ, Dobrowolska M, ... ... Xing HG, et al. MBE growth of few-layer 2H-MoTe2 on 3D substrates Journal of Crystal Growth. 482: 61-69. DOI: 10.1016/J.Jcrysgro.2017.10.024 |
0.485 |
|
| 2017 |
Bothwell B, Drummond D, Pilla M, Xing H, Jena D, Cohn G. VERTICAL GAN TRANSISTORS: THE EFFECTIVE SOLUTIONS FOR POWER ELECTRONICS Electronics: Science, Technology, Business. 2: 92-96. DOI: 10.22184/1992-4178.2017.162.2.92.96 |
0.465 |
|
| 2017 |
Li W, Nomoto K, Pilla M, Pan M, Gao X, Jena D, Xing HG. Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes Ieee Transactions On Electron Devices. 64: 1635-1641. DOI: 10.1109/Ted.2017.2662702 |
0.558 |
|
| 2017 |
Hu Z, Nomoto K, Qi M, Li W, Zhu M, Gao X, Jena D, Xing HG. 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy Ieee Electron Device Letters. 38: 1071-1074. DOI: 10.1109/Led.2017.2720747 |
0.524 |
|
| 2017 |
Encomendero J, Faria FA, Islam S, Protasenko V, Rouvimov S, Sensale-Rodriguez B, Fay P, Jena D, Xing HG. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes Physical Review X. 7. DOI: 10.1103/Physrevx.7.041017 |
0.71 |
|
| 2017 |
Islam SM, Protasenko V, Lee K, Rouvimov S, Verma J, Xing H(, Jena D. Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures Applied Physics Letters. 111: 091104. DOI: 10.1063/1.5000844 |
0.464 |
|
| 2017 |
Cho Y, Hu Z, Nomoto K, Xing HG, Jena D. Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy Applied Physics Letters. 110: 253506. DOI: 10.1063/1.4989581 |
0.528 |
|
| 2017 |
Zhu M, Qi M, Nomoto K, Hu Z, Song B, Pan M, Gao X, Jena D, Xing HG. Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3 Applied Physics Letters. 110: 182102. DOI: 10.1063/1.4982920 |
0.521 |
|
| 2016 |
Gupta P, Rahman AA, Subramanian S, Gupta S, Thamizhavel A, Orlova T, Rouvimov S, Vishwanath S, Protasenko V, Laskar MR, Xing HG, Jena D, Bhattacharya A. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Scientific Reports. 6: 23708. PMID 27025461 DOI: 10.1038/Srep23708 |
0.501 |
|
| 2016 |
Park JH, Vishwanath S, Liu X, Zhou H, Eichfeld SM, Fullerton-Shirey SK, Robinson JA, Feenstra RM, Furdyna J, Jena D, Xing HG, Kummel AC. Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers. Acs Nano. PMID 26991824 DOI: 10.1021/Acsnano.5B07698 |
0.439 |
|
| 2016 |
Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. Sub-230nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.05Ff06 |
0.481 |
|
| 2016 |
Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. High-quality InN films on GaN using graded InGaN buffers by MBE Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.05Fd12 |
0.452 |
|
| 2016 |
Vishwanath S, Liu X, Rouvimov S, Basile L, Lu N, Azcatl A, Magno K, Wallace RM, Kim M, Idrobo JC, Furdyna JK, Jena D, Xing HG. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy Journal of Materials Research. 1-11. DOI: 10.1557/Jmr.2015.374 |
0.483 |
|
| 2016 |
Nomoto K, Song B, Hu Z, Zhu M, Qi M, Kaneda N, Mishima T, Nakamura T, Jena D, Xing HG. 1.7-kV and 0.55-mΩ cm2 GaN p-n diodes on bulk GaN substrates with avalanche capability Ieee Electron Device Letters. 37: 161-164. DOI: 10.1109/Led.2015.2506638 |
0.514 |
|
| 2016 |
Song B, Zhu M, Hu Z, Qi M, Nomoto K, Yan X, Cao Y, Jena D, Xing HG. Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si with Non-Alloyed Regrown Ohmic Contacts Ieee Electron Device Letters. 37: 16-19. DOI: 10.1109/Led.2015.2497252 |
0.525 |
|
| 2016 |
Nomoto K, Hu Z, Song B, Zhu M, Qi M, Yan R, Protasenko V, Imhoff E, Kuo J, Kaneda N, Mishima T, Nakamura T, Jena D, Xing HG. GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mω•cm2: A record high figure-of-merit of 12.8 GW/cm2 Technical Digest - International Electron Devices Meeting, Iedm. 2016: 9.7.1-9.7.4. DOI: 10.1109/IEDM.2015.7409665 |
0.529 |
|
| 2016 |
Song B, Verma AK, Nomoto K, Zhu M, Jena D, Xing HG. Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (-201) substrates Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548440 |
0.571 |
|
| 2016 |
Chaney A, Qi M, Islam SM, Xing HG, Jena D. GaN tunnel switch diodes Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548409 |
0.542 |
|
| 2016 |
Verma A, Song B, Meyer D, Downey B, Wheeler V, Xing HG, Jena D. Demonstration of GaN HyperFETs with ALD VO2 Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548397 |
0.533 |
|
| 2016 |
Condori Quispe HO, Encomendero-Risco JJ, Xing HG, Sensale-Rodriguez B. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology Applied Physics Letters. 109: 063111. DOI: 10.1063/1.4961053 |
0.664 |
|
| 2016 |
Dong S, Liu X, Li X, Kanzyuba V, Yoo T, Rouvimov S, Vishwanath S, Xing HG, Jena D, Dobrowolska M, Furdyna JK. Room temperature weak ferromagnetism in Sn1-xMnxSe2 2D films grown by molecular beam epitaxy Apl Materials. 4. DOI: 10.1063/1.4942637 |
0.416 |
|
| 2016 |
Bhardwaj S, Sensale-Rodriguez B, Xing HG, Rajan S, Volakis JL. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors Journal of Applied Physics. 119. DOI: 10.1063/1.4939076 |
0.715 |
|
| 2016 |
Yan R, Arezoomandan S, Sensale-Rodriguez B, Xing HG. Exceptional Terahertz Wave Modulation in Graphene Enhanced by Frequency Selective Surfaces Acs Photonics. 3: 315-323. DOI: 10.1021/Acsphotonics.5B00639 |
0.629 |
|
| 2016 |
Kanzyuba V, Dong S, Li X, Yoo T, Liu X, Rouvimov S, Vishwanath S, Jena D, Xing H, Dobrowolska M, Furdyna JK. Structural Properties of (Sn,Mn)Se 2 - a New 2D Magnetic Semiconductor with Potential for Spintronic Applications Microscopy and Microanalysis. 22: 1512-1513. DOI: 10.1017/S1431927616008400 |
0.394 |
|
| 2015 |
Yan R, Fathipour S, Han Y, Song B, Xiao S, Li M, Ma N, Protasenko V, Muller DA, Jena D, Xing HG. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters. PMID 26226296 DOI: 10.1021/Acs.Nanolett.5B01792 |
0.533 |
|
| 2015 |
Xing HG, Yan R, Song B, Encomendero J, Jena D. THz devices based on 2D electron systems Proceedings of Spie - the International Society For Optical Engineering. 9476. DOI: 10.1117/12.2185117 |
0.487 |
|
| 2015 |
Jena D, Li M, Ma N, Hwang WS, Esseni D, Seabaugh A, Xing HG. Electron transport in 2D crystal semiconductors and their device applications 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348543 |
0.507 |
|
| 2015 |
Song B, Zhu M, Hu Z, Qi M, Yan X, Cao Y, Kohn E, Jena D, Xing HG. AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing < 60 mV/dec over 6 orders of drain current swing and relation to traps 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348527 |
0.529 |
|
| 2015 |
Li MO, Esseni D, Nahas JJ, Jena D, Xing HG. Two-dimensional heterojunction interlayer tunneling field effect transistors (Thin-TFETs) Ieee Journal of the Electron Devices Society. 3: 200-207. DOI: 10.1109/Jeds.2015.2390643 |
0.524 |
|
| 2015 |
Song B, Zhu M, Hu Z, Nomoto K, Jena D, Xing H. Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2015: 273-276. DOI: 10.1109/ISPSD.2015.7123442 |
0.453 |
|
| 2015 |
Liu X, Li X, Vishwanath S, Dong S, Yoo T, Jena D, Xing H, Dobrowolska M, Furdyna JK. MBE-grown Mn-doped SnSe2 2D films on GaAs (111)B substrates 2015 Ieee International Magnetics Conference, Intermag 2015. DOI: 10.1109/INTMAG.2015.7156850 |
0.432 |
|
| 2015 |
Bhardwaj S, Sensale-Rodriguez B, Xing HG, Volakis JL. Full-wave hydrodynamic model for predicting THz emission from grating-gate RTD-gated plasma wave HEMTs Device Research Conference - Conference Digest, Drc. 2015: 85-86. DOI: 10.1109/DRC.2015.7175567 |
0.635 |
|
| 2015 |
Islam SM, Protasenko V, Rouvimov S, Verma J, Xing H, Jena D. Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures Device Research Conference - Conference Digest, Drc. 2015: 67-68. DOI: 10.1109/DRC.2015.7175559 |
0.445 |
|
| 2015 |
Xing HG, Song B, Zhu M, Hu Z, Qi M, Nomoto K, Jena D. Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits Device Research Conference - Conference Digest, Drc. 2015: 51-52. DOI: 10.1109/DRC.2015.7175549 |
0.465 |
|
| 2015 |
Qi M, Namoto K, Zhu M, Hu Z, Zhao Y, Song B, Li G, Fay P, Xing H, Jena D. High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates Device Research Conference - Conference Digest, Drc. 2015: 31-32. DOI: 10.1109/DRC.2015.7175537 |
0.522 |
|
| 2015 |
Vishwanath S, Liu X, Rouvimov S, Mende PC, Azcatl A, McDonnell S, Wallace RM, Feenstra RM, Furdyna JK, Jena D, Xing HG. Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene 2d Materials. 2. DOI: 10.1088/2053-1583/2/2/024007 |
0.425 |
|
| 2015 |
Hu Z, Nomoto K, Song B, Zhu M, Qi M, Pan M, Gao X, Protasenko V, Jena D, Xing HG. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Applied Physics Letters. 107. DOI: 10.1063/1.4937436 |
0.554 |
|
| 2015 |
Qi M, Nomoto K, Zhu M, Hu Z, Zhao Y, Protasenko V, Song B, Yan X, Li G, Verma J, Bader S, Fay P, Xing HG, Jena D. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4936891 |
0.536 |
|
| 2015 |
Qi M, Li G, Protasenko V, Zhao P, Verma J, Song B, Ganguly S, Zhu M, Hu Z, Yan X, Mintairov A, Xing HG, Jena D. Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes Applied Physics Letters. 106. DOI: 10.1063/1.4906900 |
0.487 |
|
| 2015 |
Fathipour S, Remskar M, Varlec A, Ajoy A, Yan R, Vishwanath S, Rouvimov S, Hwang WS, Xing HG, Jena D, Seabaugh A. Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4906066 |
0.536 |
|
| 2015 |
Hwang WS, Zhao P, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Robinson JA, Haensch W, Xing H, Seabaugh A, Jena D. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates Apl Materials. 3. DOI: 10.1063/1.4905155 |
0.522 |
|
| 2015 |
Faria FA, Nomoto K, Hu Z, Rouvimov S, Xing H, Jena D. Low temperature AlN growth by MBE and its application in HEMTs Journal of Crystal Growth. 425: 133-137. DOI: 10.1016/J.Jcrysgro.2015.03.039 |
0.486 |
|
| 2014 |
Ganguly S, Verma J, Xing H, Jena D. Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts Applied Physics Express. 7. DOI: 10.7567/Apex.7.105501 |
0.576 |
|
| 2014 |
Hu Z, Yue Y, Zhu M, Song B, Ganguly S, Bergman J, Jena D, Xing HG. Impact of CF4 plasma treatment on threshold voltage and mobility in Al 2O3/InAlN/GaN MOSHEMTs Applied Physics Express. 7. DOI: 10.7567/Apex.7.031002 |
0.523 |
|
| 2014 |
Esseni D, Pala MG, Revelant A, Palestri P, Selmi L, Li M, Snider G, Jena D, Xing HG. Challenges and opportunities in the design of Tunnel FETs: Materials, device architectures, and defects Ecs Transactions. 64: 581-595. DOI: 10.1149/06406.0581ecst |
0.461 |
|
| 2014 |
Fay P, Xie Y, Zhao Y, Jiang Z, Rahman S, Xing H, Sensale-Rodriguez B, Liu L. Emerging electronic devices for THz sensing and imaging Proceedings of Spie - the International Society For Optical Engineering. 9199. DOI: 10.1117/12.2062263 |
0.681 |
|
| 2014 |
Verma JK, Protasenko VV, Islam SM, Xing H, Jena D. Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2037132 |
0.497 |
|
| 2014 |
Yue Y, Yan X, Li W, Xing HG, Jena D, Fay P. Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4896592 |
0.463 |
|
| 2014 |
Song B, Sensale-Rodriguez B, Wang R, Guo J, Hu Z, Yue Y, Faria F, Schuette M, Ketterson A, Beam E, Saunier P, Gao X, Guo S, Fay P, Jena D, ... Xing HG, et al. Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates Ieee Transactions On Electron Devices. 61: 747-754. DOI: 10.1109/Ted.2014.2299810 |
0.721 |
|
| 2014 |
Zhao P, Verma A, Verma J, Xing HG, Fay P, Jena D. GaN heterostructure barrier diodes exploiting polarization-induced δ-doping Ieee Electron Device Letters. 35: 615-617. DOI: 10.1109/Led.2014.2316140 |
0.549 |
|
| 2014 |
Xiao S, Li M, Seabaugh A, Jena D, Xing HG. Vertical heterojunction of MoS2 and WSe2 Device Research Conference - Conference Digest, Drc. 169-170. DOI: 10.1109/DRC.2014.6872351 |
0.505 |
|
| 2014 |
Song B, Zhu M, Hu Z, Kohn E, Jena D, Xing HG. GaN lateral PolarSJs: Polarization-doped super junctions Device Research Conference - Conference Digest, Drc. 99-100. DOI: 10.1109/DRC.2014.6872316 |
0.58 |
|
| 2014 |
Hu Z, Jana R, Qi M, Ganguly S, Song B, Kohn E, Jena D, Xing HG. Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2014.6872283 |
0.434 |
|
| 2014 |
Li MO, Esseni D, Jena D, Xing HG. Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET) Device Research Conference - Conference Digest, Drc. 17-18. DOI: 10.1109/DRC.2014.6872278 |
0.473 |
|
| 2014 |
Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527 |
0.533 |
|
| 2014 |
Zhao Y, Chen W, Li W, Zhu M, Yue Y, Song B, Encomendero J, Sensale-Rodriguez B, Xing H, Fay P. Direct electrical observation of plasma wave - Related effects in GaN-based two-dimensional electron gases Applied Physics Letters. 105. DOI: 10.1063/1.4900964 |
0.692 |
|
| 2014 |
Hwang WS, Verma A, Peelaers H, Protasenko V, Rouvimov S, Xing H, Seabaugh A, Haensch W, De Walle CV, Galazka Z, Albrecht M, Fornari R, Jena D. High-voltage field effect transistors with wide-bandgap β -Ga 2O3 nanomembranes Applied Physics Letters. 104. DOI: 10.1063/1.4879800 |
0.505 |
|
| 2014 |
Verma J, Islam SM, Protasenko V, Kumar Kandaswamy P, Xing H, Jena D. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4862064 |
0.521 |
|
| 2014 |
Vishwanath S, Rouvimov S, Orlova T, Liu X, Furdyna JK, Jena D, Xing HG. Atomic structure of thin MoSe2 films grown by molecular beam epitaxy Microscopy and Microanalysis. 20: 164-165. DOI: 10.1017/S1431927614002542 |
0.399 |
|
| 2014 |
Ritchie A, Eger S, Wright C, Chelladurai D, Borrowman C, Olovsson W, Magnuson M, Verma J, Jena D, Xing HG, Dubuc C, Urquhart S. Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride Applied Surface Science. 316: 232-236. DOI: 10.1016/J.Apsusc.2014.07.070 |
0.409 |
|
| 2014 |
Ganguly S, Song B, Hwang WS, Hu Z, Zhu M, Verma J, Xing HG, Jena D. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 887-889. DOI: 10.1002/Pssc.201300668 |
0.535 |
|
| 2014 |
Islam SM, Protasenko V, Xing HG, Jena D, Verma J. Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy Optics Infobase Conference Papers. |
0.483 |
|
| 2014 |
Islam SM, Protasenko V, Xing HG, Jena D, Verma J. Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy Optics Infobase Conference Papers. |
0.469 |
|
| 2013 |
Sensale-Rodriguez B, Rafique S, Yan R, Zhu M, Protasenko V, Jena D, Liu L, Xing HG. Terahertz imaging employing graphene modulator arrays. Optics Express. 21: 2324-30. PMID 23389211 DOI: 10.1364/Oe.21.002324 |
0.674 |
|
| 2013 |
Shi H, Yan R, Bertolazzi S, Brivio J, Gao B, Kis A, Jena D, Xing HG, Huang L. Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals. Acs Nano. 7: 1072-80. PMID 23273148 DOI: 10.1021/Nn303973R |
0.472 |
|
| 2013 |
Sensale-Rodríguez B, Liu L, Fay P, Jena D, Xing HG. Power amplification at THz via plasma wave excitation in RTD-gated HEMTs Ieee Transactions On Terahertz Science and Technology. 3: 200-206. DOI: 10.1109/Tthz.2012.2235909 |
0.708 |
|
| 2013 |
Li G, Wang R, Song B, Verma J, Cao Y, Ganguly S, Verma A, Guo J, Xing HG, Jena D. Polarization-induced GaN-on-insulator E/D Mode p-channel heterostructure FETs Ieee Electron Device Letters. 34: 852-854. DOI: 10.1109/Led.2013.2264311 |
0.525 |
|
| 2013 |
Sensale-Rodriguez B, Yan R, Liu L, Jena D, Xing HG. Graphene for reconfigurable terahertz optoelectronics Proceedings of the Ieee. 101: 1705-1716. DOI: 10.1109/JPROC.2013.2250471 |
0.474 |
|
| 2013 |
Sensale-Rodriguez B, Zhao P, Jena D, Xing HG. Perspectives of graphene SymFETs for THz applications International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2013.6665853 |
0.705 |
|
| 2013 |
Wang R, Li G, Guo J, Song B, Verma J, Hu Z, Yue Y, Nomoto K, Ganguly S, Rouvimov S, Gao X, Laboutin O, Cao Y, Johnson W, Fay P, ... ... Xing HG, et al. Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation Technical Digest - International Electron Devices Meeting, Iedm. 28.6.1-28.6.4. DOI: 10.1109/IEDM.2013.6724712 |
0.381 |
|
| 2013 |
Hwang WS, Verma A, Protasenko V, Rouvimov S, Xing HG, Seabaugh A, Haensch W, Van De Walle C, Galazka Z, Albrecht M, Forrnari R, Jena D. Nanomembrane β-Ga2O3 high-voltage field effect transistors Device Research Conference - Conference Digest, Drc. 207-208. DOI: 10.1109/DRC.2013.6633866 |
0.443 |
|
| 2013 |
Zhao P, Verma A, Verma J, Xing H, Fay P, Jena D. GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping Device Research Conference - Conference Digest, Drc. 203-204. DOI: 10.1109/DRC.2013.6633864 |
0.496 |
|
| 2013 |
Fathipour S, Hwang WS, Kosel T, Xing HG, Haensch W, Jena D, Seabaugh A. Exfoliated MoTe2 field-effect transistor Device Research Conference - Conference Digest, Drc. 115-116. DOI: 10.1109/DRC.2013.6633820 |
0.418 |
|
| 2013 |
Yan R, Zhang Q, Kirillov OA, Li W, Basham J, Boosalis A, Liang X, Jena D, Richter CA, Seabaugh AC, Gundlach DJ, Xing HG, Nguyen NV. Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Applied Physics Letters. 102. DOI: 10.1063/1.4796169 |
0.473 |
|
| 2013 |
Ghassemi H, Lang A, Johnson C, Wang R, Song B, Xing H, Taheri M. In-Situ and Ex-Situ Characterization of Evolution of Defects in AlGaN/GaN HEMTs under Bias Microscopy and Microanalysis. 19: 452-453. DOI: 10.1017/S143192761300425X |
0.31 |
|
| 2013 |
Sensale-Rodriguez B, Guo J, Wang R, Verma J, Li G, Fang T, Beam E, Ketterson A, Schuette M, Saunier P, Gao X, Guo S, Snider G, Fay P, Jena D, ... Xing HG, et al. Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs Solid-State Electronics. 80: 67-71. DOI: 10.1016/J.Sse.2012.10.004 |
0.69 |
|
| 2013 |
Sun N, Tahy K, Xing H, Jena D, Arnold G, Ruggiero ST. Electrical noise and transport properties of graphene Journal of Low Temperature Physics. 172: 202-211. DOI: 10.1007/S10909-013-0866-X |
0.469 |
|
| 2013 |
Tahy K, Xing H, Jena D. Graphene nanoribbon FETs for digital electronics: Experiment and modeling International Journal of Circuit Theory and Applications. 41: 603-607. DOI: 10.1002/Cta.1801 |
0.563 |
|
| 2013 |
Yan R, Rafique S, Li W, Liang X, Jena D, Liu L, Sensale-Rodriguez B, Xing HG. Tunable graphene-based metamaterial terahertz modulators Cleo: Science and Innovations, Cleo_si 2013. CM2J.2. |
0.678 |
|
| 2012 |
Yan R, Sensale-Rodriguez B, Liu L, Jena D, Xing HG. A new class of electrically tunable metamaterial terahertz modulators. Optics Express. 20: 28664-71. PMID 23263104 DOI: 10.1364/Oe.20.028664 |
0.706 |
|
| 2012 |
Sensale-Rodriguez B, Yan R, Rafique S, Zhu M, Li W, Liang X, Gundlach D, Protasenko V, Kelly MM, Jena D, Liu L, Xing HG. Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators. Nano Letters. 12: 4518-22. PMID 22862777 DOI: 10.1021/Nl3016329 |
0.699 |
|
| 2012 |
Sensale-Rodriguez B, Yan R, Kelly MM, Fang T, Tahy K, Hwang WS, Jena D, Liu L, Xing HG. Broadband graphene terahertz modulators enabled by intraband transitions. Nature Communications. 3: 780. PMID 22510685 DOI: 10.1038/Ncomms1787 |
0.695 |
|
| 2012 |
Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Fang T, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, ... Xing H, et al. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and f T of 370 GHz Ieee Electron Device Letters. 33: 988-990. DOI: 10.1109/Led.2012.2196751 |
0.742 |
|
| 2012 |
Fang T, Wang R, Xing H, Rajan S, Jena D. Effect of optical phonon scattering on the performance of GaN transistors Ieee Electron Device Letters. 33: 709-711. DOI: 10.1109/Led.2012.2187169 |
0.615 |
|
| 2012 |
Li G, Wang R, Guo J, Verma J, Hu Z, Yue Y, Faria F, Cao Y, Kelly M, Kosel T, Xing H, Jena D. Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts Ieee Electron Device Letters. 33: 661-663. DOI: 10.1109/Led.2012.2186628 |
0.563 |
|
| 2012 |
Guo J, Li G, Faria F, Cao Y, Wang R, Verma J, Gao X, Guo S, Beam E, Ketterson A, Schuette M, Saunier P, Wistey M, Jena D, Xing H. MBE-regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 Ω̇mm Ieee Electron Device Letters. 33: 525-527. DOI: 10.1109/Led.2012.2186116 |
0.49 |
|
| 2012 |
Li R, Lu Y, Zhou G, Liu Q, Chae SD, Vasen T, Hwang WS, Zhang Q, Fay P, Kosel T, Wistey M, Xing H, Seabaugh A. AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365. DOI: 10.1109/Led.2011.2179915 |
0.537 |
|
| 2012 |
Hwang WS, Remskar M, Yan R, Protasenko V, Tahy K, Chae SD, Xing H, Seabaugh A, Jena D. First demonstration of two-dimensional WS 2 transistors exhibiting 10 5 room temperature modulation and ambipolar behavior Device Research Conference - Conference Digest, Drc. 187-188. DOI: 10.1109/DRC.2012.6257042 |
0.429 |
|
| 2012 |
Li G, Wang R, Verma J, Xing H, Jena D. Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2012.6256962 |
0.578 |
|
| 2012 |
Verma J, Kumar Kandaswamy P, Protasenko V, Verma A, Xing H, Jena D. Tunnel injection GaN/AlN quantum dot UV LED Device Research Conference - Conference Digest, Drc. 249-250. DOI: 10.1109/DRC.2012.6256947 |
0.428 |
|
| 2012 |
Ganguly S, Konar A, Hu Z, Xing H, Jena D. Polarization effects on gate leakage in InAlN/AlN/GaN high-electron- mobility transistors Applied Physics Letters. 101. DOI: 10.1063/1.4773244 |
0.565 |
|
| 2012 |
Pietzka C, Li G, Alomari M, Xing H, Jena D, Kohn E. Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements Journal of Applied Physics. 112. DOI: 10.1063/1.4757932 |
0.584 |
|
| 2012 |
Laboutin O, Cao Y, Johnson W, Wang R, Li G, Jena D, Xing H. InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.3697415 |
0.583 |
|
| 2012 |
Sivasubramani P, Park TJ, Coss BE, Lucero A, Huang J, Brennan B, Cao Y, Jena D, Xing HG, Wallace RM, Kim J. In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O 3-oxidized GaN substrates Physica Status Solidi - Rapid Research Letters. 6: 22-24. DOI: 10.1002/Pssr.201105417 |
0.408 |
|
| 2012 |
Li R, Lu Y, Chae SD, Zhou G, Liu Q, Chen C, Shahriar Rahman M, Vasen T, Zhang Q, Fay P, Kosel T, Wistey M, Xing HG, Koswatta S, Seabaugh A. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392. DOI: 10.1002/Pssc.201100241 |
0.571 |
|
| 2011 |
Gao B, Hartland G, Fang T, Kelly M, Jena D, Xing HG, Huang L. Studies of intrinsic hot phonon dynamics in suspended graphene by transient absorption microscopy. Nano Letters. 11: 3184-9. PMID 21696177 DOI: 10.1021/Nl201397A |
0.457 |
|
| 2011 |
SENSALE-RODRIGUEZ B, LIU L, WANG R, ZIMMERMANN T, FAY P, JENA D, XING HG. FET THZ DETECTORS OPERATING IN THE QUANTUM CAPACITANCE LIMITED REGION International Journal of High Speed Electronics and Systems. 20: 597-609. DOI: 10.1142/S0129156411006891 |
0.692 |
|
| 2011 |
Zhou G, Lu Y, Li R, Zhang Q, Hwang WS, Liu Q, Vasen T, Chen C, Zhu H, Kuo JM, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, ... Xing H, et al. Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518. DOI: 10.1109/Led.2011.2164232 |
0.584 |
|
| 2011 |
Wang R, Li G, Verma J, Sensale-Rodriguez B, Fang T, Guo J, Hu Z, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing HG. 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs Ieee Electron Device Letters. 32: 1215-1217. DOI: 10.1109/Led.2011.2158288 |
0.751 |
|
| 2011 |
Wang R, Li G, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. 210-GHz InAlN/GaN HEMTs with dielectric-free passivation Ieee Electron Device Letters. 32: 892-894. DOI: 10.1109/Led.2011.2147753 |
0.573 |
|
| 2011 |
Wang R, Saunier P, Tang Y, Fang T, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Enhancement-mode InAlN/AlN/GaN HEMTs with 10-12A/mm leakage current and 10-12 on/off current ratio Ieee Electron Device Letters. 32: 309-311. DOI: 10.1109/Led.2010.2095494 |
0.569 |
|
| 2011 |
Sensale-Rodriguez B, Guo J, Wang R, Li G, Fang T, Saunier P, Ketterson A, Schuette M, Gao X, Guo S, Cao Y, Laboutin O, Johnson W, Snider G, Fay P, ... ... Xing H, et al. Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135164 |
0.435 |
|
| 2011 |
Fang T, Wang R, Li G, Xing H, Rajan S, Jena D. Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors Device Research Conference - Conference Digest, Drc. 273-274. DOI: 10.1109/DRC.2011.5994529 |
0.551 |
|
| 2011 |
Wang R, Li G, Fang T, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments Device Research Conference - Conference Digest, Drc. 139-140. DOI: 10.1109/DRC.2011.5994455 |
0.405 |
|
| 2011 |
Ganguly S, Verma J, Li G, Zimmermann T, Xing H, Jena D. Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 121-122. DOI: 10.1109/DRC.2011.5994445 |
0.551 |
|
| 2011 |
Tahy K, Hwang WS, Tedesco JL, Myers-Ward RL, Campbell PM, Eddy CR, Gaskill DK, Xing H, Seabaugh A, Jena D. Sub-10 nm epitaxial graphene nanoribbon FETs Device Research Conference - Conference Digest, Drc. 39-40. DOI: 10.1109/DRC.2011.5994411 |
0.449 |
|
| 2011 |
Fang T, Konar A, Xing H, Jena D. High-field transport in two-dimensional graphene Physical Review B. 84. DOI: 10.1103/Physrevb.84.125450 |
0.495 |
|
| 2011 |
Goodman KD, Protasenko VV, Verma J, Kosel TH, Xing HG, Jena D. Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3575323 |
0.508 |
|
| 2011 |
Jena D, Simon J, Wang A, Cao Y, Goodman K, Verma J, Ganguly S, Li G, Karda K, Protasenko V, Lian C, Kosel T, Fay P, Xing H. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design Physica Status Solidi (a) Applications and Materials Science. 208: 1511-1516. DOI: 10.1002/Pssa.201001189 |
0.67 |
|
| 2011 |
Zimmermann T, Cao Y, Li G, Snider G, Jena D, Xing H. Subcritical barrier AlN/GaN E/D-mode HFETs and inverters Physica Status Solidi (a) Applications and Materials Science. 208: 1620-1622. DOI: 10.1002/Pssa.201001178 |
0.533 |
|
| 2010 |
Huang L, Hartland GV, Chu LQ, Luxmi, Feenstra RM, Lian C, Tahy K, Xing H. Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene. Nano Letters. 10: 1308-13. PMID 20210348 DOI: 10.1021/Nl904106T |
0.594 |
|
| 2010 |
Simon J, Protasenko V, Lian C, Xing H, Jena D. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science (New York, N.Y.). 327: 60-4. PMID 20044569 DOI: 10.1126/Science.1183226 |
0.702 |
|
| 2010 |
Wang R, Saunier P, Xing X, Lian C, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-ms/mm transconductance Ieee Electron Device Letters. 31: 1383-1385. DOI: 10.1109/Led.2010.2072771 |
0.711 |
|
| 2010 |
Tang Y, Saunier P, Wang R, Ketterson A, Gao X, Guo S, Snider G, Jena D, Xing H, Fay P. High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications Technical Digest - International Electron Devices Meeting, Iedm. 30.4.1-30.4.4. DOI: 10.1109/IEDM.2010.5703451 |
0.429 |
|
| 2010 |
Tahy K, Fleming MJ, Raynal B, Protasenko V, Koswatta S, Jena D, Xing H, Kelly M. Device characteristics of single-layer graphene FETs grown on copper Device Research Conference - Conference Digest, Drc. 77-78. DOI: 10.1109/DRC.2010.5551930 |
0.494 |
|
| 2010 |
Wang R, Xing X, Fang T, Zimmermann T, Lian C, Li G, Saunier P, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. High performance E-mode InAIN/GaN HEMTs: Interface states from subthreshold slopes Device Research Conference - Conference Digest, Drc. 129-130. DOI: 10.1109/DRC.2010.5551875 |
0.645 |
|
| 2010 |
Li G, Cao Y, Xing HG, Jena D. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers Applied Physics Letters. 97: 222110. DOI: 10.1063/1.3523358 |
0.537 |
|
| 2010 |
Cao Y, Xing H, Jena D. Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors Applied Physics Letters. 97: 222116. DOI: 10.1063/1.3521258 |
0.496 |
|
| 2010 |
Cao Y, Zimmermann T, Xing H, Jena D. Polarization-engineered removal of buffer leakage for GaN transistors Applied Physics Letters. 96: 042102. DOI: 10.1063/1.3293454 |
0.558 |
|
| 2010 |
Liu L, Sensale-Rodriguez B, Zhang Z, Zimmermann T, Cao Y, Jena D, Fay P, Xing H. Development of microwave and terahertz detectors utilizing AlN/GaN high electron mobility transistors 21st International Symposium On Space Terahertz Technology 2010, Isstt 2010. 276-280. |
0.335 |
|
| 2009 |
Simon J, Zhang Z, Goodman K, Xing H, Kosel T, Fay P, Jena D. Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. Physical Review Letters. 103: 026801. PMID 19659229 DOI: 10.1103/Physrevlett.103.026801 |
0.52 |
|
| 2009 |
Sensale-Rodríguez B, Fay P, Liu L, Jena D, Xing HG. Enhanced terahertz detection in resonant tunnel diode-gated HEMTs Ecs Transactions. 49: 93-102. DOI: 10.1149/04901.0093ecst |
0.725 |
|
| 2009 |
ZIMMERMANN T, CAO Y, JENA D, XING HG, SAUNIER P. 4-NM AlN BARRIER ALL BINARY HFET WITH SiNx GATE DIELECTRIC International Journal of High Speed Electronics and Systems. 19: 153-159. DOI: 10.1142/S0129156409006205 |
0.588 |
|
| 2008 |
Yu Y, Protasenko V, Jena D, Xing HG, Kuno M. Photocurrent polarization anisotropy of randomly oriented nanowire networks. Nano Letters. 8: 1352-7. PMID 18393472 DOI: 10.1021/Nl080028P |
0.471 |
|
| 2008 |
Fang T, Konar A, Xing H, Jena D. Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering Physical Review B. 78. DOI: 10.1103/Physrevb.78.205403 |
0.432 |
|
| 2008 |
Lian C, Xing HG, Chang YC, Fichtenbaum N. Electrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctions Applied Physics Letters. 93. DOI: 10.1063/1.2983648 |
0.795 |
|
| 2008 |
Lian C, Xing HG, Chang YC, Fichtenbaum N. The role of doping type in setback layers on wafer-fused AlGaAs/GaAs/GaN HBTs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2960-2962. DOI: 10.1002/Pssc.200779307 |
0.788 |
|
| 2008 |
Zimmermann T, Deen D, Cao Y, Jena D, Xing HG. Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs Physica Status Solidi (C). 5: 2030-2032. DOI: 10.1002/Pssc.200778724 |
0.8 |
|
| 2008 |
Lian C, Xing HG. The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs Physica Status Solidi (C). 5: 1989-1991. DOI: 10.1002/Pssc.200778660 |
0.649 |
|
| 2007 |
Singh A, Li X, Protasenko V, Galantai G, Kuno M, Xing HG, Jena D. Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids. Nano Letters. 7: 2999-3006. PMID 17760476 DOI: 10.1021/Nl0713023 |
0.494 |
|
| 2007 |
Lian C, Xing H, Wang CS, McCarthy L, Brown D. DC characteristics of AlGaAs/GaAs/GaN HBTs formed by direct wafer fusion Ieee Electron Device Letters. 28: 8-10. DOI: 10.1109/Led.2006.887932 |
0.774 |
|
| 2007 |
Lian C, Xing HG, Wang CS, Brown D, McCarthy L. Gain degradation mechanisms in wafer fused AlGaAsGaAsGaN heterojunction bipolar transistors Applied Physics Letters. 91. DOI: 10.1063/1.2766961 |
0.775 |
|
| 2006 |
Liberis J, Ramonas M, Kiprijanovic O, Matulionis A, Goel N, Simon J, Wang K, Xing H, Jena D. Hot phonons in Si-doped GaN Applied Physics Letters. 89. DOI: 10.1063/1.2388866 |
0.562 |
|
| 2006 |
Lian C, Xing H. Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2163073 |
0.61 |
|
| 2005 |
Xing H, DenBaars SP, Mishra UK. Characterization of AlGaN/GaN p-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors Journal of Applied Physics. 97: 113703. DOI: 10.1063/1.1914952 |
0.38 |
|
| 2005 |
Yu H, McCarthy L, Xing H, Waltereit P, Shen L, Keller S, Denbaars SP, Speck JS, Mishra UK. Publisher’s Note: “Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” [Appl. Phys. Lett. 85, 5254 (2004)] Applied Physics Letters. 86: 059902. DOI: 10.1063/1.1860578 |
0.682 |
|
| 2004 |
Buttari D, Chini A, Chakraborty A, McCarthy L, Xing H, Palacios T, Shen L, Keller S, Mishra UK. Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures International Journal of High Speed Electronics and Systems. 14: 756-761. DOI: 10.1142/S012915640400279X |
0.784 |
|
| 2004 |
McCarthy LS, Zhang NQ, Xing H, Moran B, DenBaars S, Mishra UK. High voltage AlGaN/GaN heterojunction transistors International Journal of High Speed Electronics and Systems. 14: 225-243. DOI: 10.1142/S0129156404002314 |
0.745 |
|
| 2004 |
Yu H, McCarthy L, Xing H, Waltereit H, Shen L, Keller S, Denbaars SP, Speck JS, Mishra UK. Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing Applied Physics Letters. 85: 5254-5256. DOI: 10.1063/1.1828237 |
0.783 |
|
| 2004 |
Chakraborty A, Xing H, Craven MD, Keller S, Mates T, Speck JS, DenBaars SP, Mishra UK. Nonpolar a-plane p-type GaN and p-n junction diodes Journal of Applied Physics. 96: 4494-4499. DOI: 10.1063/1.1790065 |
0.599 |
|
| 2003 |
Xing H, Jena D, Rodwell M, Mishra U. Explanation of anomalously high current gain observed in GaN based bipolar transistors Ieee Electron Device Letters. 24: 4-6. DOI: 10.1109/Led.2002.807023 |
0.513 |
|
| 2003 |
Buttari D, Chini A, Palacios T, Coffie R, Shen L, Xing H, Heikman S, McCarthy L, Chakraborty A, Keller S, Mishra UK. Origin of etch delay time in Cl 2 dry etching of AlGaN/GaN structures Applied Physics Letters. 83: 4779-4781. DOI: 10.1063/1.1632035 |
0.77 |
|
| 2002 |
Buttari D, Chini A, Meneghesso G, Zanoni E, Chavarkar P, Coffie R, Zhang NQ, Heikman S, Shen L, Xing H, Zheng C, Mishra UK. Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 118-120. DOI: 10.1109/55.988810 |
0.808 |
|
| 2001 |
Xing H, Keller S, Wu YF, McCarthy L, Smorchkova IP, Buttari D, Coffie R, Green DS, Parish G, Heikman S, Shen L, Zhang N, Xu JJ, Keller BP, DenBaars SP, et al. Gallium nitride based transistors Journal of Physics Condensed Matter. 13: 7139-7157. DOI: 10.1088/0953-8984/13/32/317 |
0.812 |
|
| 2001 |
McCarthy L, Smorchkova I, Xing H, Fini P, Keller S, Speck J, DenBaars SP, Rodwell MJW, Mishra UK. Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors Applied Physics Letters. 78: 2235-2237. DOI: 10.1063/1.1358358 |
0.745 |
|
| 2000 |
Limb JB, Xing H, Moran B, McCarthy L, DenBaars SP, Mishra UK. High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage Applied Physics Letters. 76: 2457-2459. DOI: 10.1063/1.126375 |
0.427 |
|
| 1999 |
Zeng L, Guo SP, Luo YY, Lin W, Tamargo MC, Xing H, Cargill GS. Defect reduction of Zn[sub x]Cd[sub y]Mg[sub 1−x−y]Se based structures grown on InP by using Zn irradiation of the III–V surface Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1255. DOI: 10.1116/1.590734 |
0.341 |
|
| 1999 |
Limb JB, McCarthy L, Kozodoy P, Xing H, Ibbetson J, Smorchkova Y, Denbaars SP, Mishra UK. AlGaN/GaN HBTs using regrown emitter Electronics Letters. 35: 1671-1673. DOI: 10.1049/El:19991129 |
0.744 |
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