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Arpan Chakraborty, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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68 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Majumdar S, Shaik S, Das S, Kumar R, Bag A, Chakraborty A, Ghosh MMS, Biswas D. Temperature dependent etching of Gallium Nitride layers grown by PA -MBE Proceedings of the 2015 International Conference On Microwave and Photonics, Icmap 2015. DOI: 10.1109/ICMAP.2015.7408773  0.363
2012 Cich MJ, Aldaz RI, Chakraborty A, David A, Grundmann MJ, Tyagi A, Zhang M, Steranka FM, Krames MR. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density Applied Physics Letters. 101. DOI: 10.1063/1.4769228  0.653
2011 Brinkley SE, Lin YD, Chakraborty A, Pfaff N, Cohen D, Speck JS, Nakamura S, Denbaars SP. Polarized spontaneous emission from blue-green m -plane GaN-based light emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3541655  0.385
2010 Wu F, Lin Y, Chakraborty A, Ohta H, DenBaars SP, Nakamura S, Speck JS. Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN Applied Physics Letters. 96: 231912. DOI: 10.1063/1.3447940  0.35
2010 Huang C, Lin Y, Tyagi A, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Optical waveguide simulations for the optimization of InGaN-based green laser diodes Journal of Applied Physics. 107: 23101. DOI: 10.1063/1.3275325  0.398
2010 Farrell RM, Haeger DA, Chen X, Iza M, Hirai A, Kelchner KM, Fujito K, Chakraborty A, Keller S, Denbaars SP, Speck JS, Nakamura S. Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes Journal of Crystal Growth. 313: 1-7. DOI: 10.1016/J.Jcrysgro.2010.08.060  0.411
2009 Masui H, Sonoda J, Chakraborty A, Yamada H, Iso K, Pfaff N, Koslow I, Nakamura S, DenBaars SP. Customized filter cube in fluorescence microscope measurements of InGaN/GaN quantum-well characterization Japanese Journal of Applied Physics. 48: 0980031-0980032. DOI: 10.1143/Jjap.48.098003  0.309
2009 Lin YD, Hardy MT, Hsu PS, Kelchner KM, Huang CY, Haeger DA, Farrell RM, Fujito K, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Blue - Green ingan/gan laser diodes on miscut m - Plane gan substrate Applied Physics Express. 2. DOI: 10.1143/Apex.2.082102  0.381
2009 Kelchner KM, Lin YD, Hardy MT, Huang CY, Hsu PS, Farrell RM, Haeger DA, Kuo HC, Wu F, Fujito K, Cohen DA, Chakraborty A, Ohta H, Speck JS, Nakamura S, et al. Nonpolar ALGaN-cladding-free blue laser diodes with InGaN waveguiding Applied Physics Express. 2. DOI: 10.1143/Apex.2.071003  0.395
2009 Tyagi A, Wu F, Young EC, Chakraborty A, Ohta H, Bhat R, Fujito K, DenBaars SP, Nakamura S, Speck JS. Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates Applied Physics Letters. 95: 251905. DOI: 10.1063/1.3275717  0.363
2009 Lin YD, Huang CY, Hardy MT, Hsu PS, Fujito K, Chakraborty A, Ohta H, Speck JS, Denbaars SP, Nakamura S. M -plane pure blue laser diodes with p-GaN/n-AlGaN -based asymmetric cladding and InGaN-based wave-guiding layers Applied Physics Letters. 95. DOI: 10.1063/1.3212146  0.384
2009 Lin YD, Chakraborty A, Brinkley S, Kuo HC, Melo T, Fujito K, Speck JS, Denbaars SP, Nakamura S. Characterization of blue-green m -plane InGaN light emitting diodes Applied Physics Letters. 94. DOI: 10.1063/1.3167824  0.442
2007 Masui H, Schmidt MC, Kim KC, Chakraborty A, Nakamura S, DenBaars SP. Electrical characteristics of nonpolar InGaN-based light-emitting diodes evaluated at low temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 7309-7310. DOI: 10.1143/Jjap.46.7309  0.339
2007 Chakraborty A, Haskell BA, Wu F, Keller S, DenBaars SP, Nakamura S, Speck JS, Mishra UK. Structural and optical properties of nonpolar InGaN/GaN multiple quantum wells grown on planar and lateral epitaxially overgrown m-plane GaN films Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 542-546. DOI: 10.1143/Jjap.46.542  0.36
2007 Onuma T, Koyama T, Chakraborty A, McLaurin M, Haskell BA, Fini PT, Keller S, Denbaars SP, Speck JS, Nakamura S, Mishra UK, Sota T, Chichibu SF. Radiative and nonradiative lifetimes in nonpolar m -plane Inx Ga1-x NGaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1524-1528. DOI: 10.1116/1.2746354  0.388
2007 Chakraborty A, Shen L, Mishra UK. Interdigitated Multipixel Arrays for the Fabrication of High-Power Light-Emitting Diodes With Very Low Series Resistances, Reduced Current Crowding, and Improved Heat Sinking Ieee Transactions On Electron Devices. 54: 1083-1090. DOI: 10.1109/Ted.2007.893666  0.681
2007 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Philosophical Magazine. 87: 2019-2039. DOI: 10.1080/14786430701241689  0.335
2007 Wong MH, Pei Y, Palacios T, Shen L, Chakraborty A, McCarthy LS, Keller S, Denbaars SP, Speck JS, Mishra UK. Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth Applied Physics Letters. 91. DOI: 10.1063/1.2820381  0.789
2007 Chakraborty A, Moe CG, Wu Y, Mates T, Keller S, Speck JS, Denbaars SP, Mishra UK. Electrical and structural characterization of Mg-doped p -type Al0.69 Ga0.31 N films on SiC substrate Journal of Applied Physics. 101. DOI: 10.1063/1.2710303  0.385
2006 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5: 810-6. PMID 16951678 DOI: 10.1038/Nmat1726  0.531
2006 Chakraborty A, Kim KC, Wu F, Haskell BA, Keller S, Speck JS, Nakamura S, Denbaars SP, Mishra UK. Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-plane GaN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 8659-8661. DOI: 10.1143/Jjap.45.8659  0.445
2006 Masui H, Schmidt MC, Chakraborty A, Nakamura S, DenBaars SP. Electroluminescent and electrical characteristics of polar and nonpolar InGaN/GaN light-emitting diodes at low temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 7661-7666. DOI: 10.1143/Jjap.45.7661  0.369
2006 Chakraborty A, Haskell BA, Masui H, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 739-741. DOI: 10.1143/Jjap.45.739  0.444
2006 Palacios T, Chini A, Buttari D, Heikman S, Chakraborty A, Keller S, DenBaars SP, Mishra UK. Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs Ieee Transactions On Electron Devices. 53: 562-565. DOI: 10.1109/Ted.2005.863767  0.39
2006 Nidhi, Palacios T, Chakraborty A, Keller S, Mishra UK. Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures Ieee Electron Device Letters. 27: 877-880. DOI: 10.1109/Led.2006.884720  0.404
2006 Dora Y, Chakraborty A, McCarthy L, Keller S, Denbaars SP, Mishra UK. High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Ieee Electron Device Letters. 27: 713-715. DOI: 10.1109/Led.2006.881020  0.773
2006 Dora Y, Chakraborty A, Heikman S, McCarthy L, Keller S, DenBaars SP, Mishra UK. Effect of ohmic contacts on buffer leakage of GaN transistors Ieee Electron Device Letters. 27: 529-531. DOI: 10.1109/Led.2006.876306  0.788
2006 Palacios T, Suh CS, Chakraborty A, Keller S, DenBaars SP, Mishra UK. High-performance e-mode AlGaN/GaN HEMTs Ieee Electron Device Letters. 27: 428-430. DOI: 10.1109/Led.2006.874761  0.499
2006 Shen L, Palacios T, Poblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars SP, Speck JS, Mishra UK. Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment Ieee Electron Device Letters. 27: 214-216. DOI: 10.1109/Led.2006.871887  0.814
2006 Recht F, McCarthy L, Rajan S, Chakraborty A, Poblenz C, Corrion A, Speck JS, Mishra UK. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature Ieee Electron Device Letters. 27: 205-207. DOI: 10.1109/Led.2006.870419  0.777
2006 Sanabria C, Chakraborty A, Xu H, Rodwell MJ, Mishra UK, York RA. The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs Ieee Electron Device Letters. 27: 19-21. DOI: 10.1109/Led.2005.860889  0.358
2006 Palacios T, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK. AlGaN/GaN high electron mobility transistors with InGaN back-barriers Ieee Electron Device Letters. 27: 13-15. DOI: 10.1109/Led.2005.860882  0.546
2006 Armstrong A, Chakraborty A, Speck JS, DenBaars SP, Mishra UK, Ringel SA. Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy Applied Physics Letters. 89. DOI: 10.1063/1.2424670  0.403
2006 Koyama T, Onuma T, Masui H, Chakraborty A, Haskell BA, Keller S, Mishra UK, Speck JS, Nakamura S, DenBaars SP, Sota T, Chichibu SF. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates Applied Physics Letters. 89. DOI: 10.1063/1.2337085  0.348
2006 Palacios T, Shen L, Keller S, Chakraborty A, Heikman S, DenBaars SP, Mishra UK, Liberis J, Kiprijanovic O, Matulionis A. Nitride-based high electron mobility transistors with a GaN spacer Applied Physics Letters. 89. DOI: 10.1063/1.2335514  0.686
2006 Chakraborty A, Kim KC, Wu F, Speck JS, DenBaars SP, Mishra UK. Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask Applied Physics Letters. 89: 41903. DOI: 10.1063/1.2234841  0.377
2006 Chakraborty A, Shen L, Masui H, DenBaars SP, Mishra UK. Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances Applied Physics Letters. 88: 181120. DOI: 10.1063/1.2201878  0.681
2006 Shen L, Chakraborty A, McCarthy L, Fichtenbaum N, Keller S, Denbaars SP, Mishra UK. High performance deeply-recessed GaN power HEMTs without surface passivation Electronics Letters. 42: 555-556. DOI: 10.1049/El:20064262  0.807
2006 Moe CG, Schmidt MC, Masui H, Chakraborty A, Vampola K, Newman S, Moran B, Shen L, Mates T, Keller S, DenBaars SP, Emerson D. Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Journal of Electronic Materials. 35: 750-753. DOI: 10.1007/S11664-006-0133-X  0.688
2006 Onuma T, Chakraborty A, Haskell BA, Keller S, Sota T, Mishra UK, DenBaars SP, Speck JS, Nakamura S, Chichibu SF. Exciton dynamics in nonpolar (112̄0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2082-2086. DOI: 10.1002/Pssc.200565444  0.32
2006 Palacios T, Dora Y, Chakraborty A, Sanabria C, Keller S, DenBaars SP, Mishra UK. Optimization of AlGaN/GaN HEMTs for high frequency operation Physica Status Solidi (a) Applications and Materials Science. 203: 1845-1850. DOI: 10.1002/Pssa.200690013  0.8
2005 Chakraborty A. Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10 1 1 ) GaN templates Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff07-09-Ee05-09  0.33
2005 Chakraborty A, Baker TJ, Haskell BA, Wu F, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates Japanese Journal of Applied Physics, Part 2: Letters. 44: L945-L947. DOI: 10.1143/Jjap.44.L945  0.522
2005 Chakraborty A, Haskell BA, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L173-L175. DOI: 10.1143/Jjap.44.L173  0.5
2005 Masui H, Chakraborty A, Haskell BA, Mishra UK, Speck JS, Nakamura S, DenBaars SP. Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate Japanese Journal of Applied Physics, Part 2: Letters. 44: L1329-L1332. DOI: 10.1143/Jjap.44.L1329  0.321
2005 Sanabria C, Xu H, Palacios T, Chakraborty A, Heikman S, Mishra UK, York RA. Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs Ieee Transactions On Microwave Theory and Techniques. 53: 762-768. DOI: 10.1109/Tmtt.2004.840578  0.338
2005 Palacios T, Rajan S, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK. Influence of the dynamic access resistance in the gm and f T linearity of AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 52: 2117-2122. DOI: 10.1109/Ted.2005.856180  0.648
2005 Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, DenBaars SP, Speck JS, Mishra UK. High-power AlGaN/GaN HEMTs for Ka-band applications Ieee Electron Device Letters. 26: 781-783. DOI: 10.1109/Led.2005.857701  0.696
2005 Dora Y, Suh C, Chakraborty A, Heikman S, Chandrasekaran S, Mehrotra V, Mishra UK. Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 2005: 191-192. DOI: 10.1109/DRC.2005.1553115  0.82
2005 Onuma T, Chakraborty A, Haskell BA, Keller S, Denbaars SP, Speck JS, Nakamura S, Mishra UK, Sota T, Chichibu SF. Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1900947  0.326
2005 Chakraborty A, Keller S, Meier C, Haskell BA, Waltereit P, DenBaars SP, Nakamura S, Speck JS, Mishra UK. Properties of nonpolar a -plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a -plane GaN Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1851007  0.387
2005 Haskell BA, Chakraborty A, Wu F, Sasano H, Fini PT, Denbaars SP, Speck JS, Nakamura S. Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy Journal of Electronic Materials. 34: 357-360. DOI: 10.1007/S11664-005-0110-9  0.359
2005 Palacios T, Shen L, Keller S, Chakraborty A, Heikman S, Buttari D, DenBaars SP, Mishra UK. Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering Physica Status Solidi (a) Applications and Materials Science. 202: 837-840. DOI: 10.1002/Pssa.200461563  0.659
2004 Buttari D, Chini A, Chakraborty A, McCarthy L, Xing H, Palacios T, Shen L, Keller S, Mishra UK. Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures International Journal of High Speed Electronics and Systems. 14: 756-761. DOI: 10.1142/S012915640400279X  0.789
2004 Rajan S, Chakraborty A, Mishra UK, Poblenz C, Waltereit P, Speck JS. MBE-grown AlGaN/GaN HEMTs on SiC International Journal of High Speed Electronics and Systems. 14: 732-737. DOI: 10.1142/S0129156404002752  0.688
2004 Chini A, Buttari D, Coffie R, Shen L, Heikman S, Chakraborty A, Keller S, Mishra UK. Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs Ieee Electron Device Letters. 25: 229-231. DOI: 10.1109/Led.2004.826525  0.816
2004 Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, DenBaars SP, Mishra UK. High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs without Surface Passivation Ieee Electron Device Letters. 25: 7-9. DOI: 10.1109/Led.2003.821673  0.827
2004 Shen L, Buttari D, Heikman S, Chini A, Coffie R, McCarthy L, Chakraborty A, Keller S, DenBaars SP, Mishra UK. Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation Device Research Conference - Conference Digest, Drc. 39-40. DOI: 10.1109/DRC.2004.1367773  0.769
2004 Chini A, Buttari D, Coffie R, Shen L, Palacios T, Heikman S, Chakraborty A, Keller S, Mishra UK. Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 33-34. DOI: 10.1109/DRC.2004.1367770  0.38
2004 Chakraborty A, Haskell BA, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak Applied Physics Letters. 85: 5143-5145. DOI: 10.1063/1.1825612  0.528
2004 Chakraborty A, Xing H, Craven MD, Keller S, Mates T, Speck JS, DenBaars SP, Mishra UK. Nonpolar a-plane p-type GaN and p-n junction diodes Journal of Applied Physics. 96: 4494-4499. DOI: 10.1063/1.1790065  0.583
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Surface passivation of n-GaN by nitrided-thin-Ga 2O 3/SiO 2 and Si 3N 4 films Journal of Applied Physics. 96: 2674-2680. DOI: 10.1063/1.1772884  0.585
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Work-function difference between AL and n-GaN from Al-gated n-GaN/nitrided-thin-Ga 2O 3/SiO 2 metal oxide semiconductor structures Applied Physics Letters. 84: 5413-5415. DOI: 10.1063/1.1767599  0.576
2004 Craven MD, Wu F, Chakraborty A, Imer B, Mishra UK, DenBaars SP, Speck JS. Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition Applied Physics Letters. 84: 1281-1283. DOI: 10.1063/1.1650545  0.319
2004 Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, Denbaars SP, Mishra UK. Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design Journal of Electronic Materials. 33: 422-425. DOI: 10.1007/S11664-004-0195-6  0.836
2003 Chini A, Buttari D, Coffie R, Shen L, Heikman S, Chakraborty A, Keller S, Mishra UK. High performance AlGaN/GaN HEMTs with a field plated gate structure 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 434-435. DOI: 10.1109/ISDRS.2003.1272169  0.416
2003 Buttari D, Chini A, Palacios T, Coffie R, Shen L, Xing H, Heikman S, McCarthy L, Chakraborty A, Keller S, Mishra UK. Origin of etch delay time in Cl 2 dry etching of AlGaN/GaN structures Applied Physics Letters. 83: 4779-4781. DOI: 10.1063/1.1632035  0.745
2003 Craven MD, Chakraborty A, Imer B, Wu F, Keller S, Mishra UK, Speck JS, DenBaars SP. Structural and electrical characterization of a-plane GaN grown on a-plane SiC Physica Status Solidi C: Conferences. 2132-2135. DOI: 10.1002/Pssc.200303449  0.402
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