| Year |
Citation |
Score |
| 2020 |
Griffith Z, Urteaga M, Rowell P. A $W$ -Band SSPA With 100–140-mW $P_{\text{out}}$ , >20% PAE, and 26–30-dB $S_{21}$ Gain Across 88–104 GHz Ieee Microwave and Wireless Components Letters. 30: 189-192. DOI: 10.1109/Lmwc.2020.2964669 |
0.764 |
|
| 2019 |
Griffith Z, Urteaga M, Rowell P. A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT Ieee Microwave and Wireless Components Letters. 29: 282-284. DOI: 10.1109/Lmwc.2019.2902333 |
0.792 |
|
| 2018 |
Field M, Kimura T, Atkinson J, Gamzina D, Luhmann NC, Stockwell B, Grant TJ, Griffith Z, Borwick R, Hillman C, Brar B, Reed T, Rodwell M, Shin Y, Barnett LR, et al. Development of a 100-W 200-GHz High Bandwidth mm-Wave Amplifier Ieee Transactions On Electron Devices. 65: 2122-2128. DOI: 10.1109/Ted.2018.2790411 |
0.795 |
|
| 2017 |
Griffith Z, Urteaga M, Rowell P. A 190-GHz High-Gain, 3-dBm OP1dB Low DC-Power Amplifier in 250-nm InP HBT Ieee Microwave and Wireless Components Letters. 27: 1128-1130. DOI: 10.1109/Lmwc.2017.2764739 |
0.792 |
|
| 2015 |
Field M, Hillman C, Stupar P, Hacker J, Griffith Z, Lee KJ. Vanadium dioxide phase change switches Proceedings of Spie - the International Society For Optical Engineering. 9479. DOI: 10.1117/12.2179851 |
0.494 |
|
| 2015 |
Griffith Z, Urteaga M, Rowell P, Pierson R. A 6-10 mW power amplifier at 290-307.5 GHz in 250 nm InP HBT Ieee Microwave and Wireless Components Letters. 25: 597-599. DOI: 10.1109/Lmwc.2015.2451360 |
0.782 |
|
| 2015 |
Hillman C, Stupar PA, Griffith Z. VO2 Switches for Millimeter and Submillimeter-Wave Applications 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015. DOI: 10.1109/CSICS.2015.7314528 |
0.349 |
|
| 2015 |
Rollin JM, Miller D, Urteaga M, Griffith ZM, Kazemi H. A Polystrata® 820 mW G-Band Solid State Power Amplifier 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015. DOI: 10.1109/CSICS.2015.7314481 |
0.477 |
|
| 2015 |
Griffith Z, Urteaga M, Rowell P, Pierson R. 340-440mW Broadband, High-Efficiency E-Band PA's in InP HBT 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015. DOI: 10.1109/CSICS.2015.7314462 |
0.497 |
|
| 2015 |
Griffith Z, Urteaga M, Rowell P, Pierson R. 190-260GHz High-Power, Broadband PA's in 250nm InP HBT 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015. DOI: 10.1109/CSICS.2015.7314458 |
0.463 |
|
| 2014 |
Park HC, Piels M, Lu M, Bloch E, Sivananthan A, Griffith Z, Johansson L, Bowers J, Coldren L, Rodwell M. Flexible, compact WDM receivers using cascaded optical and electrical down-conversion Optics Express. 22: 102-109. DOI: 10.1364/OE.22.000102 |
0.494 |
|
| 2014 |
Daneshgar S, Park HC, Rode JC, Griffith Z, Urteaga M, Kim BS, Rodwell MJW. High efficiency W-band power amplifiers using ring-shaped sub-quarter-wavelength power combining technique Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848661 |
0.475 |
|
| 2014 |
Park HC, Daneshgar S, Rode JC, Griffith Z, Urteaga M, Kim BS, Rodwell M. An 81 GHz, 470 mW, 1.1 mm2 InP HBT power amplifier with 4-1 series power combining using sub-quarter-wavelength baluns Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848523 |
0.681 |
|
| 2014 |
Hillman C, Stupar PA, Hacker JB, Griffith Z, Field M, Rodwell M. An ultra-low loss millimeter-wave solid state switch technology based on the metal - Insulator - Transition of vanadium dioxide Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848479 |
0.53 |
|
| 2014 |
Griffith Z, Urteaga M, Rowell P, Pierson R. A 50-80mW SSPA from 190.8-244GHz at 0.5mW Pin Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848245 |
0.501 |
|
| 2014 |
Daneshgar S, Griffith Z, Seo M, Rodwell MJW. Low distortion 50 GSamples/s track-hold and sample-hold amplifiers Ieee Journal of Solid-State Circuits. 49: 2114-2126. DOI: 10.1109/JSSC.2014.2329843 |
0.449 |
|
| 2014 |
Park HC, Daneshgar S, Griffith Z, Urteaga M, Kim BS, Rodwell M. Millimeter-wave series power combining using sub-quarter-wavelength baluns Ieee Journal of Solid-State Circuits. 49: 2089-2102. DOI: 10.1109/Jssc.2014.2328653 |
0.803 |
|
| 2014 |
Griffith Z, Urteaga M, Rowell P, Pierson R. A 23.2dBm at 210GHz to 21.0dBm at 235GHz 16-way PA-cell combined InP HBT SSPA MMIC Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2014.6978528 |
0.471 |
|
| 2014 |
Griffith Z, Urteaga M, Rowell P, Pierson R. A >200mW SSPA from 76-94GHz, with peak 28.9% PAE at 86GHz Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2014.6978526 |
0.518 |
|
| 2013 |
Bloch E, Park H, Lu M, Reed T, Griffith Z, Johansson LA, Coldren LA, Ritter D, Rodwell MJ. A 1-20-GHz all-digital InP HBT optical wavelength synthesis IC Ieee Transactions On Microwave Theory and Techniques. 61: 570-580. DOI: 10.1109/Tmtt.2012.2226599 |
0.738 |
|
| 2013 |
Griffith Z, Reed T, Rodwell M, Field M. A 220GHz solid-state power amplifier MMIC with 26.8dB S21 gain, and 55.5mW Pout at 17.0dB compressed gain Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697711 |
0.766 |
|
| 2013 |
Lu M, Park HC, Bloch E, Sivananthan A, Parker JS, Griffith Z, Johansson LA, Rodwell MJW, Coldren LA. An integrated 40 Gbit/s optical costas receiver Journal of Lightwave Technology. 31: 2244-2253. DOI: 10.1109/Jlt.2013.2265075 |
0.355 |
|
| 2013 |
Daneshgar S, Griffith Z, Rodwell MJW. A DC-100 GHz bandwidth and 20.5 dB gain limiting amplifier in 0.25± InP DHBT technology Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659197 |
0.462 |
|
| 2013 |
Griffith Z, Urteaga M, Rowell P, Pierson R. A 227.5GHz InP HBT SSPA MMIC with 101mW Pout at 14.0dB compressed gain and 4.04% PAE Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659190 |
0.496 |
|
| 2013 |
Reed TB, Griffith Z, Rowell P, Field M, Rodwell M. A 180mW InP HBT power amplifier MMIC at 214 GHz Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659187 |
0.782 |
|
| 2013 |
Park HC, Daneshgar S, Rode JC, Griffith Z, Urteaga M, Kim BS, Rodwell M. 30% PAE W-band InP power amplifiers using sub-quarter-wavelength baluns for series-connected power-combining Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659182 |
0.671 |
|
| 2013 |
Park HC, Piels M, Bloch E, Lu M, Sivananthan A, Griffith Z, Johansson L, Bowers J, Coldren L, Rodwell M. Integrated circuits for wavelength division de-multiplexing in the electrical domain Iet Conference Publications. 2013: 113-115. DOI: 10.1049/cp.2013.1310 |
0.555 |
|
| 2013 |
Lu M, Park HC, Parker JS, Bloch E, Sivananthan A, Griffith Z, Johansson LA, Rodwell MJ, Coldren LA. A heterodyne optical phase-locked loop for multiple applications Optical Fiber Communication Conference, Ofc 2013. OW3D.1. |
0.508 |
|
| 2013 |
Lu M, Park HC, Parker JS, Bloch E, Sivananthan A, Griffith Z, Johansson LA, Rodwell MJ, Coldren LA. A heterodyne optical phase-locked loop for multiple applications Optical Fiber Communication Conference, Ofc 2013. OW3D.1. |
0.48 |
|
| 2012 |
Park HC, Lu M, Bloch E, Reed T, Griffith Z, Johansson L, Coldren L, Rodwell M. 40Gbit/s coherent optical receiver using a Costas loop. Optics Express. 20: B197-203. PMID 23262851 DOI: 10.1364/Oe.20.00B197 |
0.708 |
|
| 2012 |
Lu M, Park H, Bloch E, Sivananthan A, Bhardwaj A, Griffith Z, Johansson LA, Rodwell MJ, Coldren LA. Highly integrated optical heterodyne phase-locked loop with phase/frequency detection. Optics Express. 20: 9736-41. PMID 22535065 DOI: 10.1364/Oe.20.009736 |
0.597 |
|
| 2012 |
Bloch E, Park H, Lu M, Reed T, Griffith Z, Johansson LA, Coldren LA, Ritter D, Rodwell MJ. A 1-20 GHz InP HBT phase-lock-loop IC for optical wavelength synthesis Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6259675 |
0.729 |
|
| 2012 |
Reed TB, Rodwell MJW, Griffith Z, Rowell P, Field M, Urteaga M. A 58.4mW solid-state power amplifier at 220 GHz using InP HBTs Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6259659 |
0.717 |
|
| 2012 |
Parker J, Lu M, Park H, Bloch E, Sivananthan A, Griffith Z, Johansson LA, Rodwell MJ, Coldren LA. Offset locking of an SG-DBR to an InGaAsP/InP mode-locked laser 2012 Ieee Photonics Conference, Ipc 2012. 846-847. DOI: 10.1109/IPCon.2012.6359259 |
0.531 |
|
| 2012 |
Lu M, Park H, Bloch E, Sivananthan A, Griffith Z, Johansson LA, Rodwell MJ, Coldren LA. A highly integrated optical phase-locked loop for laser wavelength stabilization 2012 Ieee Photonics Conference, Ipc 2012. 844-845. DOI: 10.1109/IPCon.2012.6359258 |
0.511 |
|
| 2012 |
Griffith Z, Urteaga M, Rowell P, Pierson R, Field M. Multi-finger 250nm InP HBTs for 220GHz mm-wave power Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 204-207. DOI: 10.1109/ICIPRM.2012.6403358 |
0.412 |
|
| 2012 |
Reed TB, Rodwell M, Griffith Z, Rowell P, Young A, Urteaga M, Field M. A 220 GHz InP HBT solid-state power amplifier MMIC with 90mW P OUT at 8.2dB compressed gain Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340113 |
0.799 |
|
| 2012 |
Daneshgar S, Griffith Z, Rodwell MJW. A high IIP3, 50 GSamples/s track and hold amplifier in 0.25 μm InP HBT technology Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340112 |
0.446 |
|
| 2012 |
Rodwell MJW, Rode J, Chiang HW, Choudhary P, Reed T, Bloch E, Danesgar S, Park HC, Gossard AC, Thibeault BJ, Mitchell W, Urteaga M, Griffith Z, Hacker J, Seo M, et al. THz indium phosphide bipolar transistor technology Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340091 |
0.598 |
|
| 2012 |
Lu M, Park H, Bloch E, Sivananthan A, Griffith Z, Bhardwaj A, Johansson LA, Rodwell MJ, Coldren LA. A highly integrated optical phase-locked loop with single-sideband frequency sweeping 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.557 |
|
| 2012 |
Lu M, Park H, Bloch E, Sivananthan A, Griffith Z, Bhardwaj A, Johansson LA, Rodwell MJ, Coldren LA. A highly integrated optical phase-locked loop with singlesideband frequency sweeping Cleo: Science and Innovations, Cleo_si 2012. CW1K.3. |
0.556 |
|
| 2011 |
Griffith Z, Urteaga M, Pierson R, Rowell P, Rodwell M, Brar B. A 3-stage shunt-feedback op-amp having 19.2dB gain, 54.1dBm OIP3 (2GHz), and 252 OIP3/PDC ratio Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972955 |
0.686 |
|
| 2011 |
Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell MJW, Griffith Z, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. InGaAs/InP DHBTs in a dry-etched refractory metal emitter process demonstrating simultaneous fτ/fmax ∼430/800GHz Ieee Electron Device Letters. 32: 24-26. DOI: 10.1109/Led.2010.2084069 |
0.791 |
|
| 2011 |
Seo M, Urteaga M, Hacker J, Young A, Griffith Z, Jain V, Pierson R, Rowell P, Skalare A, Peralta A, Lin R, Lin D, Pukala D, Rodwell M. InP HBT IC technology for terahertz frequencies: Fundamental oscillators Up to 0.57 THz Ieee Journal of Solid-State Circuits. 46: 2203-2214. DOI: 10.1109/Jssc.2011.2163213 |
0.837 |
|
| 2011 |
Seo M, Young A, Urteaga M, Griffith Z, Rodwell M, Choe MJ, Field M. A 220-225.9 GHz InP HBT single-chip PLL Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2011.6062495 |
0.666 |
|
| 2011 |
Reed TB, Rodwell MJW, Griffith Z, Rowell P, Urteaga M, Field M, Hacker J. 48.8 mW multi-cell InP HBT amplifier with on-wafer power combining at 220 GHz Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2011.6062480 |
0.727 |
|
| 2011 |
Urteaga M, Seo M, Hacker J, Griffith Z, Young A, Pierson R, Rowell P, Skalare A, Jain V, Lobisser E, Rodwell MJW. InP HBTs for THz frequency integrated circuits Conference Proceedings - International Conference On Indium Phosphide and Related Materials. |
0.823 |
|
| 2010 |
Seo M, Urteaga M, Young A, Jain V, Griffith Z, Hacker J, Rowell P, Pierson R, Rodwell M. >300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process Ieee Mtt-S International Microwave Symposium Digest. 272-275. DOI: 10.1109/MWSYM.2010.5517660 |
0.668 |
|
| 2010 |
Hacker J, Seo M, Young A, Griffith Z, Urteaga M, Reed T, Rodwell M. THz MMICs based on InP HBT technology Ieee Mtt-S International Microwave Symposium Digest. 1126-1129. DOI: 10.1109/MWSYM.2010.5517225 |
0.783 |
|
| 2010 |
Griffith Z, Ha W, Chen P, Kim DH, Brar B. A 206-294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment Ieee Mtt-S International Microwave Symposium Digest. 57-60. DOI: 10.1109/MWSYM.2010.5515989 |
0.449 |
|
| 2010 |
Ha W, Griffith Z, Kim DH, Chen P, Urteaga M, Brar B. High performance InP mHEMTs on GaAs substrate with multiple interconnect layers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 140-143. DOI: 10.1109/ICIPRM.2010.5516006 |
0.457 |
|
| 2010 |
Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell M, Griffith Z, Urteaga M, Bartsch ST, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2010.5551887 |
0.81 |
|
| 2010 |
Griffith Z, Urteaga M, Pierson R, Rowell P, Rodwell M, Brar B. A 204.8GHz static divide-by-8 frequency divider in 250nm InP HBT Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2010.5619684 |
0.708 |
|
| 2010 |
Urteaga M, Seo M, Hacker J, Griffith Z, Young A, Pierson R, Rowell P, Skalare A, Rodwell MJW. InP HBT integrated circuit technology for terahertz frequencies Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2010.5619675 |
0.456 |
|
| 2009 |
Ha W, Shinohara K, Griffith Z, Urteaga M, Chen P, Rowell P, Brar B. High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 115-119. DOI: 10.1109/ICIPRM.2009.5012455 |
0.446 |
|
| 2009 |
Jain V, Baraskar AK, Wistey MA, Singisetti U, Griffith Z, Lobisser E, Thibeault BJ, Gossard AC, Rodwell MJW. Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 358-361. DOI: 10.1109/ICIPRM.2009.5012438 |
0.744 |
|
| 2009 |
Lobisser E, Griffith Z, Jain V, Thibeault BJ, Rodwell MJW, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu AWK. 200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating fmax > 800 GHz and fτ = 360 ghz Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 16-19. DOI: 10.1109/ICIPRM.2009.5012408 |
0.824 |
|
| 2009 |
Ha W, Urteaga M, Griffith Z, Pierson R, Rowell P, Chen P, Brar B. High performance monolithic InP HBT-HEMT integration Device Research Conference - Conference Digest, Drc. 163-164. DOI: 10.1109/DRC.2009.5354966 |
0.42 |
|
| 2009 |
Kozhanov A, Ouellette D, Griffith Z, Rodwell M, Jacob AP, Lee DW, Wang SX, Allen SJ. Dispersion in magnetostatic CoTaZr spin waveguides Applied Physics Letters. 94. DOI: 10.1063/1.3063124 |
0.482 |
|
| 2008 |
Hacker J, Urteaga M, Mensa D, Pierson R, Jones M, Griffith Z, Rodwell M, Brar B. 250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz Ieee Mtt-S International Microwave Symposium Digest. 403-406. DOI: 10.1109/MWSYM.2008.4633188 |
0.701 |
|
| 2008 |
Griffith Z, Urteaga M, Rodwell MJW. Mm-wave op-amps for low distortion amplification with high OIP3/p dc ratio > 100 at 2 ghz Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2008.4703038 |
0.431 |
|
| 2008 |
Rodwell M, Lobisser E, Wistey M, Jain V, Baraskar A, Lind E, Koo J, Griffith Z, Hacker J, Urteaga M, Mensa D, Pierson R, Brar B. THz bipolar transistor circuits: Technical feasibility, technology development, integrated circuit results 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008. DOI: 10.1109/CSICS.2008.5 |
0.821 |
|
| 2008 |
Griffith Z, Urteaga M, Rodwell MJW. Mm-wave Op-amps employing simple-Miller compensation, with OIP3/P DC ratios of 211 (10 dB NF) and 144 (6.0 dB NF) at 2 GHz 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008. DOI: 10.1109/CSICS.2008.11 |
0.425 |
|
| 2007 |
Griffith Z, Lind E, Rodwell MJW, Fang XM, Loubychev D, Wu Y, Fastenau JM, Liu AWK. Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fτ Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 403-406. DOI: 10.1109/ICIPRM.2007.381209 |
0.398 |
|
| 2007 |
Rodwell M, Lind E, Griffith Z, Bank SR, Crook AM, Singisetti U, Wistey M, Burek G, Gossard AC. Frequency limits of InP-based integrated circuits Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 9-13. DOI: 10.1109/ICIPRM.2007.380676 |
0.671 |
|
| 2007 |
Crook AM, Lind E, Griffith Z, Rodwell MJW, Zimmerman JD, Gossard AC, Bank SR. Low resistance, nonalloyed Ohmic contacts to InGaAs Applied Physics Letters. 91. DOI: 10.1063/1.2806235 |
0.508 |
|
| 2006 |
Griffith Z, Parthasarathy N, Rodwell MJW, Urteaga M, Shinohara K, Rowell P, Pierson R, Brar B. An ultra low-power (≤13.6 mW/latch) static frequency divider in an InP/InGaAs DHBT technology Ieee Mtt-S International Microwave Symposium Digest. 506-509. DOI: 10.1109/MWSYM.2006.249621 |
0.726 |
|
| 2006 |
Rodwell M, Griffith Z, Parthasarathy N, Singisetti U, Paidi V, Urteaga M, Pierson R, Rowell P, Brar B. Frequency limits of bipolar integrated circuits Ieee Mtt-S International Microwave Symposium Digest. 329-332. DOI: 10.1109/MWSYM.2006.249518 |
0.841 |
|
| 2006 |
Parthasarathy N, Griffith Z, Kadow C, Singisetti U, Rodwell MJW, Fang XM, Loubychev D, Wu Y, Fastenau JM, Liu AWK. Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process Ieee Electron Device Letters. 27: 313-316. DOI: 10.1109/Led.2006.872836 |
0.729 |
|
| 2006 |
Urteaga M, Shinohara K, Pierson R, Rowell P, Brar B, Griffith Z, Parthasarathy N, Rodwell M. InP DHBT IC technology with implanted collector pedestal and electroplated device contacts Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 187-190. DOI: 10.1109/CSICS.2006.319893 |
0.739 |
|
| 2006 |
Parthasarathy N, Kadow C, Griffith Z, Rodwell MJW, Urteaga M, Shinohara K, Pierson R, Brar B. Interface charge compensation in InP based heterojunction bipolar transistors with implanted subcollectors Applied Physics Letters. 89. DOI: 10.1063/1.2221512 |
0.741 |
|
| 2006 |
Griffith Z, Rodwell MJW, Fang XM, Loubychev D, Wu Y, Fastenau JM, Liu AWK. InGaAs/InP DHBTs with A 75nm collector, 20nm base demonstrating 544 GHz fτ, BVCEO = 3.2V, and BVCBO = 3.4V Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 96-99. |
0.402 |
|
| 2005 |
Paidi VK, Griffith Z, Wei Y, Dahlstrom M, Urteaga M, Parthasarathy N, Seo M, Samoska L, Fung A, Rodwell MJW. G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers Ieee Transactions On Microwave Theory and Techniques. 53: 598-605. DOI: 10.1109/TMTT.2004.840662 |
0.844 |
|
| 2005 |
Griffith Z, Rodwell MJW, Fang XM, Loubychev D, Wu Y, Fastenau JM, Liu AWK. InGaAs/InP DHBTs with 120-nm collector having simultaneously high fτ, fmax ≥ 450 GHz Ieee Electron Device Letters. 26: 530-532. DOI: 10.1109/LED.2005.852519 |
0.434 |
|
| 2005 |
Griffith Z, Dong Y, Scott D, Wei Y, Parthasarathy N, Dahlström M, Kadow C, Paidi V, Rodwell MJW, Urteaga M, Pierson R, Rowell P, Brar B, Lee S, Nguyen NX, et al. Transistor and circuit design for 100-200-GHz ICs Ieee Journal of Solid-State Circuits. 40: 2061-2068. DOI: 10.1109/JSSC.2005.854609 |
0.844 |
|
| 2005 |
Griffith Z, Dahlström M, Rodwell MJW, Fang XM, Loubychev D, Wu Y, Fastenau JM, Liu AWK. In0.53Ga0.47As/InP type-I DHBTs w/100 nm collector and 491GHz f, 415 GHZ fmax Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2005: 343-346. DOI: 10.1109/ICIPRM.2005.1517497 |
0.382 |
|
| 2004 |
Harrison I, Dahlstrom M, Krishnan S, Griffith Z, Kim YM, Rodwell MJW. Thermal limitations of InP HBTs in 80- and 160-Gb ICs Ieee Transactions On Electron Devices. 51: 529-534. DOI: 10.1109/TED.2004.824686 |
0.344 |
|
| 2004 |
Griffith Z, Kim YM, Dahlström M, Gossard AC, Rodwell MJW. InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax > 268 GHz Ieee Electron Device Letters. 25: 675-677. DOI: 10.1109/Led.2004.835160 |
0.32 |
|
| 2004 |
Griffith Z, Dahlström M, Urteaga M, Rodwell MJW, Fang XM, Lubyshev D, Wu Y, Fastenau JM, Liu WK. InGaAs-InP mesa DHBTs with simultaneously high fτ and fmax and low Ccb/Ic ratio Ieee Electron Device Letters. 25: 250-252. DOI: 10.1109/Led.2004.827288 |
0.745 |
|
| 2004 |
Kim YM, Griffith Z, Rodwell MJW, Gossard AC. High bandwidth and low-leakage current InP-In0.53Ga0.47As-InP DBHTs on GaAs substrates Ieee Electron Device Letters. 25: 170-172. DOI: 10.1109/Led.2004.825198 |
0.365 |
|
| 2004 |
Dong Y, Wei Y, Griffith Z, Urteaga M, Dahlström M, Rodwell MJW. InP heterojunction bipolar transistor with a selectively implanted collector Solid-State Electronics. 48: 1699-1702. DOI: 10.1016/J.Sse.2003.12.042 |
0.729 |
|
| 2004 |
Paidi V, Griffith Z, Wei Y, Dahlstrom M, Parthasarathy N, Urteaga M, Rodwell MJW, Fung A, Samoska L. Common base amplifier with 7- dB gain at 176 GHz in InP mesa DHBT technology Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 189-192. |
0.846 |
|
| 2004 |
Griffith Z, Dahlström M, Rodwell MJW, Urteaga M, Pierson R, Rowell P, Brar B, Lee S, Nguyen N, Nguyen C. Ultra high frequency static dividers > 150 GHz in a narrow mesa InGaAs/InP DHBT technology Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 176-179. |
0.475 |
|
| 2004 |
Dahlström M, Griffith Z, Kim YM, Rodwell MJW. High current density and high power density operation of ultra high speed InP DHBTs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 761-764. |
0.386 |
|
| 2003 |
Krishnan S, Scott D, Griffith Z, Urteaga M, Wei Y, Parthasarathy N, Rodwell M. An 8-GHz continuous-time Σ-Δ analog-digital converter in an InP-based HBT technology Ieee Transactions On Microwave Theory and Techniques. 51: 2555-2561. DOI: 10.1109/TMTT.2003.820176 |
0.77 |
|
| 2003 |
Urteaga M, Scott D, Krishnan S, Wei Y, Dahlström M, Griffith Z, Parthasarathy N, Rodwell MJW. G-Band (140-220-GHz) InP-Based HBT Amplifiers Ieee Journal of Solid-State Circuits. 38: 1451-1456. DOI: 10.1109/Jssc.2003.815906 |
0.838 |
|
| 2003 |
Wei Y, Urteaga M, Griffith Z, Scott D, Xie S, Paidi V, Parthasarathy N, Rodwell M. 75 GHz 80 mW InP DHBT power amplifier Ieee Mtt-S International Microwave Symposium Digest. 2: 919-921. |
0.835 |
|
| 2003 |
Krishnan S, Scott D, Urteaga M, Griffith Z, Wei Y, Dahlstrom M, Parthasarathy N, Rodwell M. An 8-GHz continuous-time Σ-Δ analog-digital converter in an InP-based DHBT technology Ieee Mtt-S International Microwave Symposium Digest. 2: 1063-1065. |
0.686 |
|
| 2002 |
Wei Y, Sundararajan K, Urteaga M, Griffith Z, Scott D, Paidi V, Parthasarathy N, Rodwell M. 40 GHz MMIC Power Amplifier in InP DHBT Technology Proceedings Ieee Lester Eastman Conference On High Performance Devices. 352-357. |
0.83 |
|
| 2002 |
Krishnan S, Griffith Z, Urteaga M, Wei Y, Scott D, Dahlstrom M, Parthasarathy N, Rodwell M. 87 GHz static frequency divider in an InP-based mesa DHBT technology Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 294-296. |
0.737 |
|
| 2002 |
Urteaga M, Scott D, Krishnan S, Wei Y, Dahlström M, Griffith Z, Parthasarathy N, Rodwell M. Multi-stage G-band (140-220 GHz) InP HBT amplifiers Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 44-47. |
0.73 |
|
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