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Paul F. Ma, Ph.D. - Publications

Affiliations: 
2004 Cornell University, Ithaca, NY, United States 
Area:
Chemical Engineering, Materials Science Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Zhang W, Nahm RK, Ma PF, Engstrom JR. Probing ultrathin film continuity and interface abruptness with x-ray photoelectron spectroscopy and low-energy ion scattering Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4812695  0.706
2010 Ma PF, Lu J, Aubuchon J, Gung TJ, Chang M. Plasma enhanced atomic layer deposition of TaN films for advanced interconnects Ecs Transactions. 33: 169-176. DOI: 10.1149/1.3485253  0.321
2007 Dube A, Sharma M, Ma PF, Ercius PA, Muller DA, Engstrom JR. Effects of interfacial organic layers on nucleation, growth, and morphological evolution in atomic layer thin film deposition Journal of Physical Chemistry C. 111: 11045-11058. DOI: 10.1021/Jp072264E  0.753
2006 Ma PF, Dube A, Killampalli AS, Engstrom JR. A supersonic molecular beam study of the reaction of tetrakis(dimethylamido)titanium with self-assembled alkyltrichlorosilane monolayers. The Journal of Chemical Physics. 125: 34706. PMID 16863372 DOI: 10.1063/1.2220562  0.676
2006 Dube A, Sharma M, Ma PF, Engstrom JR. Effects of interfacial organic layers on thin film nucleation in atomic layer deposition Applied Physics Letters. 89. DOI: 10.1063/1.2360902  0.749
2005 Killampalli AS, Ma PF, Engstrom JR. The reaction of tetrakis(dimethylamido)titanium with self-assembled alkyltrichlorosilane monolayers possessing -OH, -NH2, and -CH3 terminal groups. Journal of the American Chemical Society. 127: 6300-10. PMID 15853337 DOI: 10.1021/Ja047922C  0.703
2004 Schroeder TW, Lam AM, Ma PF, Engstrom JR. Effects of atomic hydrogen on the selective area growth of Si and Si 1-xGe x thin films on Si and SiO 2 surfaces: Inhibition, nucleation, and growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 578-593. DOI: 10.1116/1.1699336  0.741
2002 Ma PF, Schroeder TW, Engstrom JR. Nucleation of copper on TiN and SiO2 from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane Applied Physics Letters. 80: 2604-2606. DOI: 10.1063/1.1469687  0.756
2001 Schroeder TW, Ma PF, Lam AM, Zheng YJ, Engstrom JR. Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation Applied Physics Letters. 79: 2181-2183. DOI: 10.1063/1.1408271  0.735
2001 Zheng YJ, Ma PF, Engstrom JR. Etching by atomic hydrogen of Ge overlayers on Si(100) Journal of Applied Physics. 90: 3614-3622. DOI: 10.1063/1.1394898  0.667
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