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Kung-Yen Lee, Ph.D. - Publications

Affiliations: 
2005 Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Cheng C, Huang C, Lee K, Zhao F. A Novel Deep Junction Edge Termination for Superjunction MOSFETs Ieee Electron Device Letters. 39: 544-547. DOI: 10.1109/Led.2018.2803199  0.324
2017 Lee K, Liu Y, Wang S, Chan L. Influence of the Design of Square p+ Islands on the Characteristics of 4H-SiC JBS Ieee Transactions On Electron Devices. 64: 1394-1398. DOI: 10.1109/Ted.2017.2653844  0.312
2015 Huang CF, Hsu HC, Chu KW, Lee LH, Tsai MJ, Lee KY, Zhao F. Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge Ieee Transactions On Electron Devices. 62: 354-358. DOI: 10.1109/Ted.2014.2361535  0.305
2012 Lee K, Huang Y. An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps Ieee Transactions On Electron Devices. 59: 694-699. DOI: 10.1109/Ted.2011.2181391  0.339
2012 Lee W, Chu K, Huang C, Lee L, Tsai M, Lee K, Zhao F. Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate Ieee Transactions On Electron Devices. 59: 754-760. DOI: 10.1109/Ted.2011.2178028  0.339
2009 Huang C, Kan C, Wu T, Lee M, Liu Y, Lee K, Zhao F. 3510-V 390- $\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC Lateral JFET on a Semi-Insulating Substrate Ieee Electron Device Letters. 30: 957-959. DOI: 10.1109/Led.2009.2027722  0.351
2007 Lee KY, Huang CF, Chen W, Capano MA. The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes Physica B: Condensed Matter. 401: 41-43. DOI: 10.1016/J.Physb.2007.08.109  0.577
2007 Lee KY, Capano MA. The correlation of surface defects and reverse breakdown of 4H-SiC Schottky barrier diodes Journal of Electronic Materials. 36: 272-276. DOI: 10.1007/S11664-006-0075-3  0.579
2006 Chen W, Lee Ky, Capano MA. Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers Journal of Crystal Growth. 297: 265-271. DOI: 10.1016/J.Jcrysgro.2006.09.033  0.577
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