| Year |
Citation |
Score |
| 2007 |
Delaunay PY, Hood A, Nguyen BM, Hoffman D, Wei Y, Razeghi M. Passivation of type-II InAsGaSb double heterostructure Applied Physics Letters. 91. DOI: 10.1063/1.2776353 |
0.783 |
|
| 2007 |
Hood A, Delaunay PY, Hoffman D, Nguyen BM, Wei Y, Razeghi M, Nathan V. Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation Applied Physics Letters. 90. DOI: 10.1063/1.2747172 |
0.79 |
|
| 2007 |
Nguyen BM, Hoffman D, Wei Y, Delaunay PY, Hood A, Razeghi M. Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm Applied Physics Letters. 90. DOI: 10.1063/1.2746943 |
0.803 |
|
| 2006 |
Hood A, Hoffman D, Wei Y, Fuchs F, Razeghi M. Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes Applied Physics Letters. 88: 52112. DOI: 10.1063/1.2172399 |
0.817 |
|
| 2006 |
Fuchs F, Hoffmann D, Gin A, Hood A, Wei Y, Razeghi M. Negative luminescence of InAs/GaSb superlattice photodiodes Physica Status Solidi (C). 3: 444-447. DOI: 10.1002/Pssc.200564175 |
0.795 |
|
| 2005 |
Hoffman D, Gin A, Wei Y, Hood A, Fuchs F, Razeghi M. Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes Ieee Journal of Quantum Electronics. 41: 1474-1479. DOI: 10.1109/Jqe.2005.858783 |
0.785 |
|
| 2005 |
Hoffman D, Hood A, Wei Y, Gin A, Fuchs F, Razeghi M. Negative luminescence of long-wavelength InAs∕GaSb superlattice photodiodes Applied Physics Letters. 87: 201103. DOI: 10.1063/1.2130536 |
0.805 |
|
| 2005 |
Wei Y, Hood A, Yau H, Gin A, Razeghi M, Tidrow MZ, Nathan V. Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range Applied Physics Letters. 86: 233106. DOI: 10.1063/1.1947908 |
0.81 |
|
| 2005 |
Wei Y, Hood A, Yau H, Yazdanpanah V, Razeghi M, Tidrow MZ, Nathan V. High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm Applied Physics Letters. 86: 91109. DOI: 10.1063/1.1879113 |
0.822 |
|
| 2004 |
Wei Y, Razeghi M. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering Physical Review B - Condensed Matter and Materials Physics. 69: 853161-853167. DOI: 10.1103/Physrevb.69.085316 |
0.509 |
|
| 2004 |
Gin A, Wei Y, Hood A, Bajowala A, Yazdanpanah V, Razeghi M, Tidrow M. Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes Applied Physics Letters. 84: 2037-2039. DOI: 10.1063/1.1686894 |
0.798 |
|
| 2003 |
Wei Y, Bae J, Gin A, Hood A, Razeghi M, Brown GJ, Tidrow M. High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering Journal of Applied Physics. 94: 4720-4722. DOI: 10.1063/1.1606506 |
0.793 |
|
| 2003 |
Razeghi M, Gin A, Wei Y, Bae J, Nah J. Quantum sensing using Type II InAs/GaSb superlattice for infrared detection Microelectronics Journal. 34: 405-410. DOI: 10.1016/S0026-2692(03)00035-1 |
0.772 |
|
| 2003 |
Gin A, Wei Y, Bae J, Hood A, Nah J, Razeghi M. Passivation of type II InAs/GaSb superlattice photodiodes Thin Solid Films. 447: 489-492. DOI: 10.1016/J.Tsf.2003.09.002 |
0.789 |
|
| 2002 |
Wei Y, Gin A, Razeghi M, Brown GJ. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm Applied Physics Letters. 81: 3675-3677. DOI: 10.1063/1.1520699 |
0.821 |
|
| 2002 |
Wei Y, Gin A, Razeghi M, Brown GJ. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications Applied Physics Letters. 80: 3262-3264. DOI: 10.1063/1.1476395 |
0.822 |
|
| 2001 |
Razeghi M, Wei Y, Gin A, Brown GJ. Quantum dots of InAs/GaSb type II superlattice for infrared sensing Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H3.1.1 |
0.837 |
|
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