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Binh-Minh Nguyen, Ph.D. - Publications

Affiliations: 
2010 Electrical and Computer Engineering Northwestern University, Evanston, IL 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter Physics
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29 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 de Vries FK, Timmerman T, Ostroukh VP, van Veen J, Beukman AJA, Qu F, Wimmer M, Nguyen BM, Kiselev AA, Yi W, Sokolich M, Manfra MJ, Marcus CM, Kouwenhoven LP. h/e Superconducting Quantum Interference through Trivial Edge States in InAs. Physical Review Letters. 120: 047702. PMID 29437430 DOI: 10.1103/Physrevlett.120.047702  0.31
2017 Beukman AJA, de Vries FK, van Veen J, Skolasinski R, Wimmer M, Qu F, de Vries DT, Nguyen B, Yi W, Kiselev AA, Sokolich M, Manfra MJ, Nichele F, Marcus CM, Kouwenhoven LP. Spin-orbit interaction in a dual gated InAs/GaSb quantum well Physical Review B. 96. DOI: 10.1103/Physrevb.96.241401  0.303
2017 Chen R, Nguyen B, Tang W, Liu Y, Yoo J, Dayeh SA. In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length Applied Physics Letters. 110: 213103. DOI: 10.1063/1.4983835  0.306
2016 Qu F, van Veen J, de Vries FK, Beukman AJ, Wimmer MT, Yi W, Kiselev AA, Nguyen BM, Sokolich M, Manfra MJ, Nichele F, Marcus CM, Kouwenhoven LP. Quantized conductance and large g-factor anisotropy in InSb quantum point contacts. Nano Letters. PMID 27805409 DOI: 10.1021/Acs.Nanolett.6B03297  0.341
2016 Nguyen BM, Kiselev AA, Noah R, Yi W, Qu F, Beukman AJ, de Vries FK, van Veen J, Nadj-Perge S, Kouwenhoven LP, Kjaergaard M, Suominen HJ, Nichele F, Marcus CM, Manfra MJ, et al. Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry. Physical Review Letters. 117: 077701. PMID 27563999 DOI: 10.1103/Physrevlett.117.077701  0.377
2016 Nichele F, Suominen HJ, Kjaergaard M, Marcus CM, Sajadi E, Folk JA, Qu F, Beukman AJA, Vries FKd, Veen Jv, Nadj-Perge S, Kouwenhoven LP, Nguyen B, Kiselev AA, Yi W, et al. Edge transport in the trivial phase of InAs/GaSb New Journal of Physics. 18: 083005. DOI: 10.1088/1367-2630/18/8/083005  0.325
2015 Qu F, Beukman AJ, Nadj-Perge S, Wimmer M, Nguyen BM, Yi W, Thorp J, Sokolich M, Kiselev AA, Manfra MJ, Marcus CM, Kouwenhoven LP. Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells. Physical Review Letters. 115: 036803. PMID 26230816 DOI: 10.1103/Physrevlett.115.036803  0.332
2015 Yoo J, Nguyen BM, Campbell IH, Dayeh SA, Schuele P, Evans D, Picraux ST. Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators. Acs Nano. 9: 5154-63. PMID 25961330 DOI: 10.1021/Acsnano.5B00500  0.368
2015 Yi W, Kiselev AA, Thorp J, Noah R, Nguyen BM, Bui S, Rajavel RD, Hussain T, Gyure MF, Kratz P, Qian Q, Manfra MJ, Pribiag VS, Kouwenhoven LP, Marcus CM, et al. Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures Applied Physics Letters. 106. DOI: 10.1063/1.4917027  0.305
2015 Nguyen BM, Yi W, Noah R, Thorp J, Sokolich M. High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate Applied Physics Letters. 106. DOI: 10.1063/1.4906589  0.424
2014 Razeghi M, Nguyen BM. Advances in mid-infrared detection and imaging: a key issues review. Reports On Progress in Physics. Physical Society (Great Britain). 77: 082401. PMID 25093341 DOI: 10.1088/0034-4885/77/8/082401  0.621
2014 Nguyen BM, Taur Y, Picraux ST, Dayeh SA. Diameter-independent hole mobility in Ge/Si core/shell nanowire field effect transistors. Nano Letters. 14: 585-91. PMID 24382113 DOI: 10.1021/Nl4037559  0.312
2014 Yoo J, Nguyen B, Dayeh SA, Schuele P, Evans D, Picraux ST. Silicon epitaxy in nanoscale for photovoltaic applications Proceedings of Spie. 9174: 917407. DOI: 10.1117/12.2065696  0.338
2014 Dai X, Nguyen B, Hwang Y, Soci C, Dayeh SA. Novel Heterogeneous Integration Technology of III–V Layers and InGaAs FinFETs to Silicon Advanced Functional Materials. 24: 4420-4426. DOI: 10.1002/Adfm.201400105  0.337
2013 Nguyen B, Liu Y, Tang W, Picraux ST, Dayeh SA. Ultra-short channel field effect transistors based on Ge/Si core/shell nanowires Proceedings of Spie. 8631: 863118. DOI: 10.1117/12.2008676  0.355
2012 Haddadi A, Ramezani-Darvish S, Chen G, Hoang AM, Nguyen B, Razeghi M. High Operability 1024$\,\times\,$1024 Long Wavelength Type-II Superlattice Focal Plane Array Ieee Journal of Quantum Electronics. 48: 221-228. DOI: 10.1109/Jqe.2011.2175903  0.709
2011 Huang EK, Haddadi A, Chen G, Nguyen BM, Hoang MA, McClintock R, Stegall M, Razeghi M. Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance. Optics Letters. 36: 2560-2. PMID 21725479 DOI: 10.1364/Ol.36.002560  0.759
2011 Huang EKW, Haddadi A, Chen G, Nguyen BM, Hoang MA, McClintock R, Stegall M, Razeghi M. Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance Optics Letters. 36: 2560-2562. DOI: 10.1364/OL.36.002560  0.689
2011 Nguyen B, Chen G, Hoang M, Razeghi M. Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer Ieee Journal of Quantum Electronics. 47: 686-690. DOI: 10.1109/Jqe.2010.2103049  0.749
2010 Nguyen B. The 2010 Edward G. Weston Summer Research Fellowship — Summary Report: High Uniformity Long Wavelength Infrared Type II Superlattice Photodiodes on a 3″ Substrate The Electrochemical Society Interface. 19: 59-60. DOI: 10.1149/2.F08104If  0.461
2010 Nguyen BM, Abdollahi Pour S, Bogdanov S, Razeghi M. Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.855635  0.75
2010 Razeghi M, Huang EK, Nguyen BM, Abdollahi Pour S, Delaunay PY. Type-II antimonide-based superlattices for the third generation infrared focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.849527  0.719
2010 Razeghi M, Nguyen BM, Delaunay PY, Abdollahi Pour S, Huang EKW, Manukar P, Bogdanov S, Chen G. High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.840422  0.733
2010 Huang EKW, Delaunay PY, Nguyen BM, Pour SA, Razeghi M. Photovoltaic MWIR type-II superlattice focal plane array on GaAs substrate Ieee Journal of Quantum Electronics. 46: 1704-1708. DOI: 10.1109/Jqe.2010.2061218  0.724
2010 Nguyen BM. High uniformity long wavelength infrared type II superlattice photodiodes on a 3" Substrate Electrochemical Society Interface. 19: 59-60.  0.396
2009 Razeghi M, Nguyen BM, Delaunay PY, Huang EKW, Abdollahi Pour S, Manukar P, Bogdanov S. State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging Proceedings of Spie - the International Society For Optical Engineering. 7467. DOI: 10.1117/12.828421  0.744
2009 Delaunay P, Nguyen B, Razeghi M. Background limited performance of long-wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice Proceedings of Spie. 7298. DOI: 10.1117/12.818271  0.75
2009 Razeghi M, Hoffman D, Nguyen BM, Delaunay PY, Huang EKW, Tidrow MZ, Nathan V. Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices Proceedings of the Ieee. 97: 1056-1066. DOI: 10.1109/JPROC.2009.2017108  0.701
2008 Razeghi M, Hoffman D, Nguyen BM, Delaunay PY, Huang EKW, Tidrow MZ. Recent advances in LWIR Type - II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices Proceedings of Spie - the International Society For Optical Engineering. 6940. DOI: 10.1117/12.782854  0.704
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