Year |
Citation |
Score |
2009 |
Majumdar A, Ren Z, Koester SJ, Haensch W. Undoped-body extremely thin SOI MOSFETs with back gates Ieee Transactions On Electron Devices. 56: 2270-2276. DOI: 10.1109/Ted.2009.2028057 |
0.41 |
|
2008 |
Majumdar A, Ren Z, Sleight JW, Dobuzinsky D, Holt JR, Venigalla R, Koester SJ, Haensch W. High-performance undoped-body 8-nm-thin SOI field-effect transistors Ieee Electron Device Letters. 29: 515-517. DOI: 10.1109/Led.2008.920975 |
0.362 |
|
2006 |
Nayfeh HM, Singh DV, Hergenrother JM, Sleight JW, Ren Z, Dokumaci O, Black L, Chidambarrao D, Venigalla R, Pan J, Natzle W, Tessier BL, Ott JA, Khare M, Guarini KW, et al. Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs Ieee Electron Device Letters. 27: 288-290. DOI: 10.1109/Led.2006.871542 |
0.376 |
|
2006 |
Singh DV, Jenkins KA, Sleight J, Ren Z, Ieong M, Haensch W. Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths Ieee Electron Device Letters. 27: 191-193. DOI: 10.1109/Led.2006.870254 |
0.305 |
|
2003 |
Venugopal R, Ren Z, Lundstrom MS. Simulating quantum transport in nanoscale MOSFETs: ballistic hole transport, subband engineering and boundary conditions Ieee Transactions On Nanotechnology. 2: 135-143. DOI: 10.1109/Tnano.2003.817229 |
0.657 |
|
2003 |
Ren Z, Venugopal R, Goasguen S, Datta S, Lundstrom MS. nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs Ieee Transactions On Electron Devices. 50: 1914-1925. DOI: 10.1109/Ted.2003.816524 |
0.667 |
|
2002 |
Ren Z, Hegde S, Doris B, Oldiges P, Kanarsky T, Dokumaci O, Roy R, Leong M, Jones EC, Wong H-P. An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs Ieee Electron Device Letters. 23: 609-611. DOI: 10.1109/Led.2002.803757 |
0.365 |
|
2002 |
Venugopal R, Ren Z, Datta S, Lundstrom MS, Jovanovic D. Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches Journal of Applied Physics. 92: 3730-3739. DOI: 10.1063/1.1503165 |
0.673 |
|
2002 |
Guo J, Ren Z, Lundstrom M. Journal of Computational Electronics. 1: 185-189. DOI: 10.1023/A:1020717322718 |
0.604 |
|
2002 |
Rhew J, Ren Z, Lundstrom MS. Benchmarking Macroscopic Transport Models for Nanotransistor TCAD Journal of Computational Electronics. 1: 385-388. DOI: 10.1023/A:1020712010848 |
0.662 |
|
2002 |
Rhew JH, Ren Z, Lundstrom MS. A numerical study of ballistic transport in a nanoscale MOSFET Solid-State Electronics. 46: 1899-1906. DOI: 10.1016/S0038-1101(02)00130-2 |
0.671 |
|
2000 |
Assad F, Ren Z, Vasileska D, Datta S, Lundstrom M. On the performance limits for Si MOSFETs: a theoretical study Ieee Transactions On Electron Devices. 47: 232-240. DOI: 10.1109/16.817590 |
0.375 |
|
2000 |
Fossum JG, Ren Z, Kim K, Lundstrom M. Extraordinarily high drive currents in asymmetrical double-gate MOSFETs Superlattices and Microstructures. 28: 525-530. DOI: 10.1006/Spmi.2000.0957 |
0.571 |
|
2000 |
Ren Z, Lundstrom M. Simulation of nanoscale MOSFETs: A scattering theory interpretation Superlattices and Microstructures. 27: 177-189. DOI: 10.1006/Spmi.1999.0798 |
0.597 |
|
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