| Year |
Citation |
Score |
| 2017 |
Jou AY, Azadegan R, Mohammadi S. High-Resistivity CMOS SOI Rectenna for Implantable Applications Ieee Microwave and Wireless Components Letters. 27: 854-856. DOI: 10.1109/Lmwc.2017.2734776 |
0.434 |
|
| 2017 |
Shen Y, Cui J, Mohammadi S. An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors Solid-State Electronics. 131: 45-52. DOI: 10.1016/J.Sse.2017.02.005 |
0.408 |
|
| 2016 |
Opondo N, Ramadurgam S, Yang C, Mohammadi S. Trap studies in silicon nanowire junctionless transistors using low-frequency noise Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 011804. DOI: 10.1116/1.4939787 |
0.309 |
|
| 2016 |
Helmi SR, Chen J, Mohammadi S. High-Efficiency Microwave and mm-Wave Stacked Cell CMOS SOI Power Amplifiers Ieee Transactions On Microwave Theory and Techniques. 64: 2025-2038. DOI: 10.1109/Tmtt.2016.2570212 |
0.542 |
|
| 2016 |
Mohammadi S. Bring the system down - To a chip Sirf 2016 - 2016 Ieee 16th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems. 91-93. DOI: 10.1109/SIRF.2016.7445477 |
0.436 |
|
| 2016 |
Jou AYS, Azadegan R, Mohammadi S. An efficient fully integrated miniature rectenna in a standard CMOS SOI technology Sirf 2016 - 2016 Ieee 16th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems. 13-16. DOI: 10.1109/SIRF.2016.7445455 |
0.394 |
|
| 2016 |
Cui J, Helmi S, Tang Y, Mohammadi S. Stacking the Deck for Efficiency: RF- to Millimeter-Wave Stacked CMOS SOI Power Amplifiers Ieee Microwave Magazine. 17: 55-69. DOI: 10.1109/Mmm.2016.2608698 |
0.475 |
|
| 2015 |
Helmi SR, Shan H, Mohammadi S. A 1.8 to 2.4 GHz stacked power amplifier implemented in 0.25μm CMOS SOS technology 2015 Ieee 15th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2015. 52-54. DOI: 10.1109/SIRF.2015.7119872 |
0.371 |
|
| 2013 |
Chen J, Helmi SR, Jou AY, Mohammadi S. A Wideband Power Amplifier in 45 nm CMOS SOI Technology for X Band Applications Ieee Microwave and Wireless Components Letters. 23: 587-589. DOI: 10.1109/Lmwc.2013.2279117 |
0.548 |
|
| 2013 |
Chen JH, Helmi SR, Azadegan R, Aryanfar F, Mohammadi S. A broadband stacked power amplifier in 45-nm CMOS SOI technology Ieee Journal of Solid-State Circuits. 48: 2775-2784. DOI: 10.1109/Jssc.2013.2276135 |
0.546 |
|
| 2012 |
Ebrahimi B, Afzal B, Afzali-Kusha A, Mohammadi S. A RESURF LDMOSFET with a dummy gate on partial SOI Journal of the Korean Physical Society. 60: 842-848. DOI: 10.3938/Jkps.60.842 |
0.367 |
|
| 2012 |
Yu L, Pajouhi H, Nelis MR, Rhoads JF, Mohammadi S. Tunable, Dual-Gate, Silicon-on-Insulator (SOI) Nanoelectromechanical Resonators Ieee Transactions On Nanotechnology. 11: 1093-1099. DOI: 10.1109/Tnano.2012.2212028 |
0.57 |
|
| 2012 |
Chen J, Helmi SR, Pajouhi H, Sim Y, Mohammadi S. A Wideband RF Power Amplifier in 45-nm CMOS SOI Technology With Substrate Transferred to AlN Ieee Transactions On Microwave Theory and Techniques. 60: 4089-4096. DOI: 10.1109/Tmtt.2012.2223229 |
0.586 |
|
| 2012 |
Saremi M, Afzali-Kusha A, Mohammadi S. Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits Microelectronic Engineering. 95: 74-82. DOI: 10.1016/J.Mee.2012.01.009 |
0.372 |
|
| 2011 |
Nelis MR, Yu L, Zhang W, Zhao Y, Yang C, Raman A, Mohammadi S, Rhoads JF. Sources and implications of resonant mode splitting in silicon nanowire devices. Nanotechnology. 22: 455502. PMID 22020109 DOI: 10.1088/0957-4484/22/45/455502 |
0.475 |
|
| 2011 |
Kim S, Kwon HJ, Lee S, Shim H, Chun Y, Choi W, Kwack J, Han D, Song M, Kim S, Mohammadi S, Kee I, Lee SY. Low-power flexible organic light-emitting diode display device. Advanced Materials (Deerfield Beach, Fla.). 23: 3511-6. PMID 21735486 DOI: 10.1002/Adma.201101066 |
0.633 |
|
| 2011 |
Lahiji RR, Katehi LPB, Mohammadi S. A wideband CMOS distributed amplifier with slow-wave shielded transmission lines International Journal of Microwave and Wireless Technologies. 3: 59-66. DOI: 10.1017/S1759078710000772 |
0.824 |
|
| 2011 |
Saremi M, Ebrahimi B, Afzali-Kusha A, Mohammadi S. A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement Microelectronics Reliability. 51: 2069-2076. DOI: 10.1016/J.Microrel.2011.07.084 |
0.323 |
|
| 2011 |
Kim S, Kwon H, Lee S, Shim H, Chun Y, Choi W, Kwack J, Han D, Song M, Kim S, Mohammadi S, Kee I, Lee SY. Flexible Displays: Low-Power Flexible Organic Light-Emitting Diode Display Device (Adv. Mater. 31/2011) Advanced Materials. 23: 3475-3475. DOI: 10.1002/Adma.201190120 |
0.593 |
|
| 2010 |
Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M. DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology. 21: 385203. PMID 20798468 DOI: 10.1088/0957-4484/21/38/385203 |
0.651 |
|
| 2010 |
Kim S, Kim S, Park J, Ju S, Mohammadi S. Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry. Acs Nano. 4: 2994-8. PMID 20450163 DOI: 10.1021/Nn1006094 |
0.648 |
|
| 2010 |
Yu L, Weon D, Kim J, Mohammadi S. Integrated high-inductance three-dimensional toroidal inductors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 903-907. DOI: 10.1116/1.3474985 |
0.576 |
|
| 2010 |
Lahiji RR, Sharifi H, Katehi LPB, Mohammadi S. 3-D CMOS circuits based on low-loss vertical interconnects on parylene-N Ieee Transactions On Microwave Theory and Techniques. 58: 48-56. DOI: 10.1109/Tmtt.2009.2036394 |
0.819 |
|
| 2010 |
Sayer RA, Kim S, Franklin AD, Mohammadi S, Fisher TS. Shot noise thermometry for thermal characterization of templated carbon nanotubes Ieee Transactions On Components and Packaging Technologies. 33: 178-183. DOI: 10.1109/Tcapt.2009.2038488 |
0.623 |
|
| 2010 |
Rabieirad L, Martinez EJ, Mohammadi S. An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming Ieee Transactions On Advanced Packaging. 33: 362-369. DOI: 10.1109/Tadvp.2009.2038234 |
0.796 |
|
| 2009 |
Aksu F, Topacoglu H, Arman C, Atac A, Tetik S, Hasanovic A, Kulenovic A, Mornjakovic Z, Pikula B, Sarac-Hadzihalilovic A, Voljevica A, Bamac B, Colak T, Alemdar M, Dundar G, ... ... Mohammadi S, et al. Poster presentations. Surgical and Radiologic Anatomy : Sra. 31: 95-229. PMID 27392492 DOI: 10.1007/BF03371486 |
0.506 |
|
| 2009 |
Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/Adma.200801032 |
0.583 |
|
| 2009 |
Back JH, Tsai CL, Kim S, Mohammadi S, Shim M. Manifestation of Kohn anomaly in 1/f fluctuations in metallic carbon nanotubes. Physical Review Letters. 103: 215501. PMID 20366051 DOI: 10.1103/Physrevlett.103.215501 |
0.594 |
|
| 2009 |
Maleki T, Mohammadi S, Ziaie B. A nanofluidic channel with embedded transverse nanoelectrodes Nanotechnology. 20. PMID 19417517 DOI: 10.1088/0957-4484/20/10/105302 |
0.309 |
|
| 2009 |
Rabieirad L, Mohammadi S. Reconfigurable CMOS tuners for software-defined radio Ieee Transactions On Microwave Theory and Techniques. 57: 2768-2774. DOI: 10.1109/Tmtt.2009.2032464 |
0.786 |
|
| 2009 |
Rabieirad L, Martinez EJ, Mohammadi S. Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits Ieee Transactions On Microwave Theory and Techniques. 57: 1439-1446. DOI: 10.1109/Tmtt.2009.2019992 |
0.804 |
|
| 2009 |
Sharifi H, Lahiji RR, Lin HC, Ye PD, Katehi LPB, Mohammadi S. Characterization of parylene-N as flexible substrate and passivation layer for microwave and millimeter-wave integrated circuits Ieee Transactions On Advanced Packaging. 32: 84-92. DOI: 10.1109/Tadvp.2008.2006760 |
0.793 |
|
| 2009 |
Lahiji RR, Sharifi H, Katehi LPB, Mohammadi S. Design and implementation of a novel three dimensional CMOS low noise amplifier with transmission lines on parylene-N Ieee Mtt-S International Microwave Symposium Digest. 589-592. DOI: 10.1109/MWSYM.2009.5165765 |
0.827 |
|
| 2009 |
Rabieirad L, Mohammadi S. A dual-mode programmable distributed amplifier/mixer Ieee Mtt-S International Microwave Symposium Digest. 581-584. DOI: 10.1109/MWSYM.2009.5165763 |
0.366 |
|
| 2008 |
Back JH, Kim S, Mohammadi S, Shim M. Low-frequency noise in ambipolar carbon nanotube transistors. Nano Letters. 8: 1090-4. PMID 18351749 DOI: 10.1021/Nl073140G |
0.639 |
|
| 2008 |
Sharifi H, Mohammadi S. Substrate noise rejection in a new mixed-signal integration technology 2008 Ieee Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systms - Digest of Papers, Sirf. 147-150. DOI: 10.1109/SMIC.2008.43 |
0.395 |
|
| 2008 |
Rabieirad L, Mohammadi S. A reconfigurable MEMS-less CMOS tuner for software defined radio Ieee Mtt-S International Microwave Symposium Digest. 779-782. DOI: 10.1109/MWSYM.2008.4632948 |
0.427 |
|
| 2008 |
Lahiji RR, Sharifi H, Mohammadi S, Katehi LPB. On the study of parylene-N for millimeter-wave integrated circuits Proceedings of the International Symposium and Exhibition On Advanced Packaging Materials Processes, Properties and Interfaces. 147-151. DOI: 10.1109/ISAPM.2007.4419934 |
0.809 |
|
| 2008 |
Ju S, Chen P, Zhou C, Ha YG, Facchetti A, Marks TJ, Kim SK, Mohammadi S, Janes DB. 1f noise of SnO2 nanowire transistors Applied Physics Letters. 92. DOI: 10.1063/1.2947586 |
0.39 |
|
| 2008 |
Ju S, Kim S, Mohammadi S, Janes DB, Ha YG, Facchetti A, Marks TJ. Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements Applied Physics Letters. 92. DOI: 10.1063/1.2830005 |
0.648 |
|
| 2008 |
Kim S, Xuan Y, Ye PD, Mohammadi S, Lee SW. Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis Solid-State Electronics. 52: 1260-1263. DOI: 10.1016/J.Sse.2008.05.003 |
0.351 |
|
| 2008 |
Sharifi H, Mohammadi S. Self-aligned wafer-level integration technology with an embedded faraday cage for substrate crosstalk suppression Microwave and Optical Technology Letters. 50: 829-832. DOI: 10.1002/Mop.23207 |
0.734 |
|
| 2007 |
Weon D, Jeon J, Mohammadi S. High-Q micromachined three-dimensional integrated inductors for high-frequency applications Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 264. DOI: 10.1116/1.2433984 |
0.458 |
|
| 2007 |
Choi TY, Sharifi H, Sigmarsson HH, Chappell WJ, Mohammadi S, Katehi LPB. 3-D integration of 10-GHz filter and CMOS receiver front-end Ieee Transactions On Microwave Theory and Techniques. 55: 2298-2305. DOI: 10.1109/Tmtt.2007.907351 |
0.734 |
|
| 2007 |
Sharifi H, Choi TY, Mohammadi S. Self-aligned wafer-level integration technology with high-density interconnects and embedded passives Ieee Transactions On Advanced Packaging. 30: 11-18. DOI: 10.1109/Tadvp.2006.890221 |
0.726 |
|
| 2007 |
Sharifi H, Mohammadi S. Heterogeneously integrated 10Gb/s CMOS optoelectronic receiver for long haul telecommunication Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 515-518. DOI: 10.1109/RFIC.2007.380936 |
0.385 |
|
| 2007 |
Lee H, Mohammadi S. A 500μW 2.4GHz CMOS subthreshold mixer for ultra low power applications Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 325-328. DOI: 10.1109/RFIC.2007.380893 |
0.348 |
|
| 2007 |
Katehi L, Chappell W, Mohammadi S, Margomenos A, Steer M. Heterogeneous Wafer-Scale Circuit Architectures Ieee Microwave Magazine. 8: 52-69. DOI: 10.1109/Mmw.2007.316255 |
0.459 |
|
| 2007 |
Sharifi H, Mohammadi S. 1.3-1.55-μm CMOS/InP optoelectronic receiver using a self-aligned wafer level integration technology Ieee Photonics Technology Letters. 19: 1066-1068. DOI: 10.1109/LPT.2007.899441 |
0.403 |
|
| 2007 |
Lee H, Mohammadi S. A subthreshold low phase noise CMOS LC VCO for ultra low power applications Ieee Microwave and Wireless Components Letters. 17: 796-798. DOI: 10.1109/Lmwc.2007.908057 |
0.792 |
|
| 2007 |
Lin HC, Yang T, Sharifi H, Kim SK, Xuan Y, Shen T, Mohammadi S, Ye PD. Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric Applied Physics Letters. 91: 212101. DOI: 10.1063/1.2814052 |
0.669 |
|
| 2007 |
Lin HC, Kim SK, Chang D, Xuan Y, Mohammadi S, Ye PD, Lu G, Facchetti A, Marks TJ. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics Applied Physics Letters. 91: 092103. DOI: 10.1063/1.2776013 |
0.442 |
|
| 2007 |
Kim SK, Xuan Y, Ye PD, Mohammadi S, Back JH, Shim M. Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors Applied Physics Letters. 90. DOI: 10.1063/1.2724904 |
0.655 |
|
| 2006 |
Lee KY, Mohammadi S, Bhattacharya PK, Katehi LPB. Compact models based on transmission-line concept for integrated capacitors and inductors Ieee Transactions On Microwave Theory and Techniques. 54: 4141-4148. DOI: 10.1109/Tmtt.2006.886157 |
0.377 |
|
| 2006 |
Lahiji RR, Herrick KJ, Lee Y, Margomenos A, Mohammadi S, Katehi LPB. Multiwafer vertical interconnects for three-dimensional integrated circuits Ieee Transactions On Microwave Theory and Techniques. 54: 2699-2705. DOI: 10.1109/Tmtt.2006.874867 |
0.825 |
|
| 2006 |
Rabieirad L, Mohammadi S. Single-walled carbon nanotube mixers Ieee Mtt-S International Microwave Symposium Digest. 2055-2058. DOI: 10.1109/MWSYM.2006.249859 |
0.302 |
|
| 2006 |
Lee KY, Mohammadi S, Bhattacharya PK, Katehi LPB. A wideband compact model for integrated inductors Ieee Microwave and Wireless Components Letters. 16: 490-492. DOI: 10.1109/Lmwc.2006.880712 |
0.41 |
|
| 2006 |
Perlman B, Katehi L, Ballato A, Engheta N, Peroulis D, Mohammadi S. Nanotechnology and active thin films for compact RF components and agile systems Ferroelectrics. 342: 163-182. DOI: 10.1080/00150190600946328 |
0.402 |
|
| 2006 |
Weon D, Kim J, Mohammadi S. Design of high-Q 3-D integrated inductors for high frequency applications Analog Integrated Circuits and Signal Processing. 50: 89-93. DOI: 10.1007/S10470-006-9003-Y |
0.456 |
|
| 2006 |
Hanil L, Mohammadi S. A 3GHz subthreshold CMOS low noise amplifier Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 2006: 494-497. |
0.346 |
|
| 2005 |
Kim S, Choi TY, Rabieirad L, Jeon JH, Shim M, Mohammadi S. A poly-Si gate carbon nanotube field effect transistor for high frequency applications Ieee Mtt-S International Microwave Symposium Digest. 2005: 303-306. DOI: 10.1109/MWSYM.2005.1516586 |
0.589 |
|
| 2004 |
Liu WY, Suryanarayanan J, Nath J, Mohammadi S, Katehi LPB, Steer MB. Toroidal Inductors for Radio-Frequency Integrated Circuits Ieee Transactions On Microwave Theory and Techniques. 52: 646-654. DOI: 10.1109/Tmtt.2003.822019 |
0.501 |
|
| 2003 |
Lu Y, Peroulis D, Mohammadi S, Katehi LPB. A MEMS reconfigurable matching network for a class AB amplifier Ieee Microwave and Wireless Components Letters. 13: 437-439. DOI: 10.1109/Lmwc.2003.818523 |
0.372 |
|
| 2002 |
Ma Z, Mohammadi S, Bhattacharya P, Katehi LPB, Alterovitz SA, Ponchak GE. A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor Ieee Transactions On Microwave Theory and Techniques. 50: 1101-1108. DOI: 10.1109/22.993412 |
0.438 |
|
| 2001 |
Ma Z, Mohammadi S, Lu L, Bhattacharya P, Katehi LPB, Alterovitz SA, Ponchak GE. An X-band high-power amplifier using SiGe/Si HBT and lumped passive components Ieee Microwave and Wireless Components Letters. 11: 287-289. DOI: 10.1109/7260.933773 |
0.43 |
|
| 2001 |
Park J, Pavlidis D, Mohammadi S, Guyaux J-, Garcia J-. Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors Ieee Transactions On Electron Devices. 48: 1297-1303. DOI: 10.1109/16.930642 |
0.354 |
|
| 2001 |
Ma Z, Mohammadi S, Bhattacharya P, Katehi LPB, Alterovitz SA, Ponchak GE, Strohm KM, Luy J-. Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors Electronics Letters. 37: 1140-1142. DOI: 10.1049/El:20010770 |
0.448 |
|
| 2001 |
Ma Z, Mohammadi S, Bhattacharya P, Katehi LPB, Alterovitz SA, Ponchak GE. High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor Electronics Letters. 37: 790-791. DOI: 10.1049/El:20010514 |
0.391 |
|
| 2000 |
Mohammadi S, Park J-, Pavlidis D, Guyaux J-, Garcia JC. Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication Ieee Transactions On Microwave Theory and Techniques. 48: 1038-1044. DOI: 10.1109/22.904742 |
0.453 |
|
| 2000 |
Mohammadi S. A nonfundamental theory of low-frequency noise in semiconductor devices Ieee Transactions On Electron Devices. 47: 2009-2017. DOI: 10.1109/16.877159 |
0.363 |
|
| 2000 |
Mohammadi S, Pavlidis D, Bayraktaroglu B. Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs Ieee Transactions On Electron Devices. 47: 677-686. DOI: 10.1109/16.830979 |
0.423 |
|
| 2000 |
Mohammadi S, Hubbard S, Chelli C, Pavlidis D, Bayraktaroglu B. Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs Solid-State Electronics. 44: 739-746. DOI: 10.1016/S0038-1101(99)00292-0 |
0.362 |
|
| 2000 |
Park J, Mohammadi S, Pavlidis D, Dua C, Guyaux J, Garcia J. Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology Solid-State Electronics. 44: 2059-2067. DOI: 10.1016/S0038-1101(00)00074-5 |
0.481 |
|
| 1998 |
Garcia JC, Dua C, Mohammadi S, Park JW, Pavlidis D. Growth chacteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors Journal of Electronic Materials. 27: 442-445. DOI: 10.1007/S11664-998-0175-3 |
0.42 |
|
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