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Michael W. Dashiell, Ph.D. - Publications

Affiliations: 
2000 University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering
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37 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Ehsani H, Lewis N, Nichols GJ, Danielson L, Dashiell MW, Shellenbarger ZA, Wang CA. Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers Journal of Crystal Growth. 291: 77-81. DOI: 10.1016/j.jcrysgro.2006.02.054  0.353
2004 Dashiell MW, Xuan G, Ansorge E, Zhang X, Kolodzey J, DeSalvo GC, Gigante JR, Malkowski WJ, Clarke RC, Liu J, Skowronski M. Pseudomorphic SiC alloys formed by Ge ion implantation Applied Physics Letters. 85: 2253-2255. DOI: 10.1063/1.1791741  0.705
2004 Khorenko E, Prost W, Tegude FJ, Stoffel M, Duschl R, Dashiell MW, Schmidt OG. Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes Journal of Applied Physics. 96: 3848-3851. DOI: 10.1063/1.1787137  0.422
2004 Khorenko E, Prost W, Tegude FJ, Stoffel M, Duschl R, Dashiell MW, Schmidt OG, Klimeck G. Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodes Asdam 2004 - Conference Proceedings, 5th International Conference On Semiconductor Devices and Microsystmes. 29-32.  0.433
2002 Dashiell MW, Xuan G, Zhang X, Ansorge E, Kolodzey J. Strained SiC:Ge layers in 4H SiC formed by Ge implantation Materials Research Society Symposium - Proceedings. 742: 321-326. DOI: 10.1557/Proc-742-K6.7  0.721
2002 Dashiell MW, Kolodzey J, Crozat P, Aniel F, Lourtioz JM. Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 23: 357-359. DOI: 10.1109/Led.2002.1004234  0.621
2002 Dashiell MW, Denker U, Müller C, Costantini G, Manzano C, Kern K, Schmidt OG. Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures Applied Physics Letters. 80: 1279-1281. DOI: 10.1063/1.1430508  0.354
2002 Dashiell MW, Denker U, Schmidt OG. Influence of the Si-Ge interface on phononless radiative recombination in Ge hut clusters grown on Si (0 0 1) Physica E: Low-Dimensional Systems and Nanostructures. 13: 1030-1033. DOI: 10.1016/S1386-9477(02)00295-3  0.416
2002 Denker U, Dashiell MW, Jin-Phillipp NY, Schmidt OG. Trenches around and between self assembled silicon/germanium islands grown on silicon substrates investigated by atomic force microscopy Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 89: 166-170. DOI: 10.1016/S0921-5107(01)00833-9  0.339
2002 Dashiell MW, Müller C, Jin-Phillipp NY, Denker U, Schmidt OG, Eberl K. Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 89: 106-110. DOI: 10.1016/S0921-5107(01)00811-X  0.408
2002 Roe KJ, Dashiell MW, Xuan G, Ansorge E, Katulka G, Sustersic N, Zhang X, Kolodzey J. Ge Incorporation in SiC and the Effects on Device Performance Proceedings Ieee Lester Eastman Conference On High Performance Devices. 201-206.  0.709
2002 Dashiell MW, Kalambur AT, Leeson R, Roe KJ, Rabolt JF, Kolodzey J. Electrical Effects of DNA as the Gate Electrode of MOS transistors Proceedings Ieee Lester Eastman Conference On High Performance Devices. 259-264.  0.679
2001 Dashiell MW, Denker U, Schmidt OG. Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001) Applied Physics Letters. 79: 2261-2263. DOI: 10.1063/1.1405148  0.398
2000 Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz J-. Heterostructures of pseudomorphic Ge1−yCy and Ge1−x−ySixCy alloys grown on Ge (001) substrates Journal of Vacuum Science & Technology B. 18: 1728-1731. DOI: 10.1116/1.591462  0.681
2000 Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2826-2834. DOI: 10.1116/1.1319691  0.551
2000 Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581  0.769
2000 Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz JM. Heterostructures of pseudomorphic Ge1-yCy and G1-x-ySixCy alloys grown on Ge (001) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1728-1731.  0.653
2000 Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. The mechanical properties of common interlevel dielectric films and their influences on aluminum interconnect extrusions Materials Research Society Symposium - Proceedings. 594: 421-426.  0.561
1999 Roe KJ, Dashiell MW, Kolodzey J, Boucaud P, Lourtioz J. Molecular beam epitaxy growth of Ge[sub 1−y]C[sub y] alloys on Si (100) with high carbon contents Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1301. DOI: 10.1116/1.590745  0.79
1999 Shao X, Jonczyk R, Dashiell M, Hits D, Orner BA, Khan AS, Roe K, Kolodzey J, Berger PR, Kaba M, Barteau MA, Unruh KM. Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots Journal of Applied Physics. 85: 578-582. DOI: 10.1063/1.369492  0.762
1999 Duschl R, Schmidt OG, Winter W, Eberl K, Dashiell MW, Kolodzey J, Jin-Phillipp NY, Phillipp F. Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001) Applied Physics Letters. 74: 1150-1152. DOI: 10.1063/1.123470  0.65
1999 Kulik LV, Guedj C, Dashiell MW, Kolodzey J, Hairie A. Phonon spectra of substitutional carbon in Si1-xGex alloys Physical Review B - Condensed Matter and Materials Physics. 59: 15753-15759.  0.566
1998 Junge KE, Lange R, Dolan JM, Zollner S, Humlfcek J, Dashiell MW, Hits DA, Orner BA, Kolodzey J. Ellipsometry Studies, Optical Properties, And Band Structure of Gel. 1- y C y , Ge-RICH Si 1- x-y Ge x C y , And Boron-Doped Si 1- x Ge x Alloys Mrs Proceedings. 533: 125. DOI: 10.1557/Proc-533-125  0.666
1998 Dashiell MW, Kulik LV, Hits D, Kolodzey J. MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures Proceedings of Spie - the International Society For Optical Engineering. 3278: 270-277. DOI: 10.1117/12.298210  0.713
1998 Guedj C, Dashiell MW, Kulik L, Kolodzey J, Hairie A. Precipitation of β-SiC in Si1-yCY alloys Journal of Applied Physics. 84: 4631-4633. DOI: 10.1063/1.368703  0.664
1998 Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419  0.687
1998 Kulik LV, Hits DA, Dashiell MW, Kolodzey J. The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures Applied Physics Letters. 72: 1972-1974. DOI: 10.1063/1.121238  0.717
1998 Shao X, Rommel SL, Orner BA, Feng H, Dashiell MW, Troeger RT, Kolodzey J, Berger PR, Laursen T. 1.3 μm photoresponsivity in Si-based Ge1-xCx photodiodes Applied Physics Letters. 72: 1860-1862. DOI: 10.1063/1.121207  0.79
1998 Dashiell MW, Kulik LV, Hits D, Kolodzey J, Watson G. Carbon incorporation in Si1-yCy alloys grown by molecular beam epitaxy using a single silicon-graphite source Applied Physics Letters. 72: 833-835. DOI: 10.1063/1.120908  0.642
1998 Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50. DOI: 10.1016/S0040-6090(98)00441-6  0.749
1998 Junge KE, Voss NR, Lange R, Dolan JM, Zollner S, Dashiell M, Hits DA, Orner BA, Jonczyk R, Kolodzey J. Optical properties and band structure of Ge1−yCy and Ge-rich Si1−x−yGexCy alloys Thin Solid Films. 313: 172-176. DOI: 10.1016/S0040-6090(97)00806-7  0.635
1998 Chowdhury EA, Dashiell M, Qiu G, Olowolafe JO, Jonczyk R, Smith D, Barnett A, Kolodzey J, Unruh KM, Swann CP, Suehle J, Chen Y. Structural, optical and electronic properties of oxidized AIN thin films at different temperatures Journal of Electronic Materials. 27: 918-922. DOI: 10.1007/S11664-998-0119-Y  0.583
1998 Junge KE, Lange R, Dolan JM, Zollner S, Humlicek J, Dashiell MW, Hits DA, Orner BA, Kolodzey J. Ellipsometry studies, optical properties, and band structure of Ge1-yCy, Ge-rich Si1-x-yGexCy, and boron-doped Si1-xGex alloys Materials Research Society Symposium - Proceedings. 533: 125-129.  0.484
1997 Chowdhury EA, Kolodzey J, Olowolafe JO, Qiu G, Katulka G, Hits D, Dashiell M, Van Der Weide D, Swann CP, Unruh KM. Thermally oxidized AIN thin films for device insulators Applied Physics Letters. 70: 2732-2734. DOI: 10.1063/1.118980  0.592
1997 Orner BA, Chen F, Hits D, Dashiell MW, Kolodzey J. Optical constants of B- and P-doped Ge1-yCy alloys on Si substrates Proceedings of Spie - the International Society For Optical Engineering. 3007: 152-161.  0.468
1997 Shao X, Rommel SL, Orner BA, Feng H, Kolodzey J, Berger PR, Dashiell MW. Ge1-xCx/Si heterojunction photodiode Proceedings of Spie - the International Society For Optical Engineering. 3007: 162-169.  0.49
1996 Junge KE, Lange R, Dolan JM, Zollner S, Dashiell M, Orner BA, Kolodzey J. Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si Applied Physics Letters. 69: 4084-4086. DOI: 10.1063/1.117826  0.701
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