| Year |
Citation |
Score |
| 2002 |
Katulka G, Roe KJ, Kolodzey J, Swann CP, Desalvo G, Clarke RC, Eldridge G, Messham R. A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation Journal of Electronic Materials. 31: 346-350. DOI: 10.1007/S11664-002-0080-0 |
0.605 |
|
| 2002 |
Dashiell MW, Kalambur AT, Leeson R, Roe KJ, Rabolt JF, Kolodzey J. Electrical Effects of DNA as the Gate Electrode of MOS transistors Proceedings Ieee Lester Eastman Conference On High Performance Devices. 259-264. |
0.648 |
|
| 2002 |
Roe KJ, Dashiell MW, Xuan G, Ansorge E, Katulka G, Sustersic N, Zhang X, Kolodzey J. Ge Incorporation in SiC and the Effects on Device Performance Proceedings Ieee Lester Eastman Conference On High Performance Devices. 201-206. |
0.681 |
|
| 2001 |
Roe KJ, Katulka G, Kolodzey J, Saddow SE, Jacobson D. Silicon carbide and silicon carbide:Germanium heterostructure bipolar transistors Applied Physics Letters. 78: 2073-2075. DOI: 10.1063/1.1358851 |
0.661 |
|
| 2001 |
Roe KJ, Kolodzey J, Swann CP, Tsao MW, Rabolt JF, Chen J, Brandes GR. The electrical and optical properties of thin film diamond implanted with silicon Applied Surface Science. 175: 468-473. DOI: 10.1016/S0169-4332(01)00120-9 |
0.687 |
|
| 2001 |
Katulka G, Roe K, Kolodzey J, Eldridge G, Clarke RC, Swann CP, Wilson RG. The electrical characteristics of silicon carbide alloyed with germanium Applied Surface Science. 175: 505-511. DOI: 10.1016/S0169-4332(01)00111-8 |
0.666 |
|
| 1999 |
Roe KJ, Dashiell MW, Kolodzey J, Boucaud P, Lourtioz J. Molecular beam epitaxy growth of Ge[sub 1−y]C[sub y] alloys on Si (100) with high carbon contents Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1301. DOI: 10.1116/1.590745 |
0.749 |
|
| 1999 |
Shao X, Jonczyk R, Dashiell M, Hits D, Orner BA, Khan AS, Roe K, Kolodzey J, Berger PR, Kaba M, Barteau MA, Unruh KM. Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots Journal of Applied Physics. 85: 578-582. DOI: 10.1063/1.369492 |
0.707 |
|
| 1999 |
Roe KJ. Molecular beam epitaxy growth of Ge1-yCy alloys on Si (100) with high carbon contents Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 1301-1303. |
0.381 |
|
| 1998 |
Kolodzey J, Gauthier-Lafaye O, Sauvage S, Perrossier JL, Boucaud P, Julien FH, Lourtioz JM, Chen F, Orner BA, Roe K, Guedj C, Wilson RG, Spear J. The effects of composition and doping on the response of GeC-Si photodiodes Ieee Journal On Selected Topics in Quantum Electronics. 4: 964-968. DOI: 10.1109/2944.736085 |
0.698 |
|
| 1998 |
Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50. DOI: 10.1016/S0040-6090(98)00441-6 |
0.676 |
|
| 1997 |
Chen F, Tröger RT, Roe K, Dashell MD, Jonczyk R, Holmes DS, Wilson RG, Kolodzey J. Electrical properties of Si 1−x−y Ge x C y and Ge 1−y C y alloys Journal of Electronic Materials. 26: 1371-1375. DOI: 10.1007/S11664-997-0053-4 |
0.662 |
|
| 1996 |
Orner BA, Olowolafe J, Roe K, Kolodzey J, Laursen T, Mayer JW, Spear J. Band gap of Ge rich Si1−x−yGexCy alloys Applied Physics Letters. 69: 2557-2559. DOI: 10.1063/1.117738 |
0.628 |
|
| 1996 |
Kolodzey J, O’Neil PA, Zhang S, Orner BA, Roe K, Unruh KM, Swann CP, Waite MM, Shah SI. Erratum: ‘‘Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)] Applied Physics Letters. 68: 1168-1169. DOI: 10.1063/1.116796 |
0.596 |
|
| 1995 |
Kolodzey J, O'Neil PA, Zhang S, Orner BA, Roe K, Unruh KM, Swann CP, Waite MM, Shah SI. Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy Applied Physics Letters. 67: 1865. DOI: 10.1063/1.114358 |
0.68 |
|
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