| Year |
Citation |
Score |
| 2018 |
Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR. Correction to InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays. Nano Letters. 18: 8070. PMID 30985152 DOI: 10.1021/Nl302264J |
0.777 |
|
| 2016 |
Nakajima Y, Dapkus PD. The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures Applied Physics Letters. 109: 83101. DOI: 10.1063/1.4961580 |
0.328 |
|
| 2015 |
Yao M, Cong S, Arab S, Huang N, Povinelli ML, Cronin SB, Dapkus PD, Zhou C. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition. Nano Letters. PMID 26502060 DOI: 10.1021/Acs.Nanolett.5B03890 |
0.331 |
|
| 2015 |
Arab S, Anderson PD, Chi CY, Dapkus PD, Povinelli ML, Cronin SB. Observation of Asymmetric Nanoscale Optical Cavity in GaAs Nanosheets Acs Photonics. 2: 1124-1128. DOI: 10.1021/Acsphotonics.5B00179 |
0.39 |
|
| 2014 |
Yao M, Huang N, Cong S, Chi CY, Seyedi MA, Lin YT, Cao Y, Povinelli ML, Dapkus PD, Zhou C. GaAs nanowire array solar cells with axial p-i-n junctions. Nano Letters. 14: 3293-303. PMID 24849203 DOI: 10.1021/Nl500704R |
0.337 |
|
| 2014 |
Sarkissian R, O'Brien JD, Dapkus PD. Laser dynamics: Probing microscopic processes in InGaN light emitters Journal of the Optical Society of America B: Optical Physics. 31: 3001-3007. DOI: 10.1364/Josab.31.003001 |
0.37 |
|
| 2014 |
Arab S, Yao M, Chi C, Zhou C, Dapkus PD, Cronin SB. Formation of Fabry-Perot cavity in one-dimensional and two-dimensional GaAs nanostructures Proceedings of Spie - the International Society For Optical Engineering. 9168. DOI: 10.1117/12.2074531 |
0.415 |
|
| 2014 |
Arab S, Chi CY, Yao M, Chang CC, Dapkus PD, Cronin SB. Optical and electrical characterization of surface passivated GaAs nanostructures Proceedings of Spie - the International Society For Optical Engineering. 8996. DOI: 10.1117/12.2040999 |
0.369 |
|
| 2014 |
Arab S, Anderson PD, Yao M, Zhou C, Dapkus PD, Povinelli ML, Cronin SB. Enhanced Fabry-Perot resonance in GaAs nanowires through local field enhancement and surface passivation Nano Research. 7: 1146-1153. DOI: 10.1007/S12274-014-0477-0 |
0.359 |
|
| 2014 |
Chang CC, Chi CY, Chen CC, Huang N, Arab S, Qiu J, Povinelli ML, Dapkus PD, Cronin SB. Carrier dynamics and doping profiles in GaAs nanosheets Nano Research. 7: 163-170. DOI: 10.1007/S12274-013-0383-X |
0.338 |
|
| 2014 |
Lin YT, Yeh TW, Nakajima Y, Dapkus PD. Catalyst-free GaN nanorods synthesized by selective area growth Advanced Functional Materials. 24: 3162-3171. DOI: 10.1002/Adfm.201303671 |
0.651 |
|
| 2013 |
Chi CY, Chang CC, Hu S, Yeh TW, Cronin SB, Dapkus PD. Twin-free GaAs nanosheets by selective area growth: implications for defect-free nanostructures. Nano Letters. 13: 2506-15. PMID 23634790 DOI: 10.1021/Nl400561J |
0.641 |
|
| 2013 |
Hu S, Chi CY, Fountaine KT, Yao M, Atwater HA, Dapkus PD, Lewis NS, Zhou C. Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array photoanodes Energy and Environmental Science. 6: 1879-1890. DOI: 10.1039/C3Ee40243F |
0.405 |
|
| 2012 |
Lin YT, Yeh TW, Dapkus PD. Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition. Nanotechnology. 23: 465601. PMID 23093007 DOI: 10.1088/0957-4484/23/46/465601 |
0.638 |
|
| 2012 |
Chang CC, Chi CY, Yao M, Huang N, Chen CC, Theiss J, Bushmaker AW, Lalumondiere S, Yeh TW, Povinelli ML, Zhou C, Dapkus PD, Cronin SB. Electrical and optical characterization of surface passivation in GaAs nanowires. Nano Letters. 12: 4484-9. PMID 22889241 DOI: 10.1021/Nl301391H |
0.637 |
|
| 2012 |
Madaria AR, Yao M, Chi C, Huang N, Lin C, Li R, Povinelli ML, Dapkus PD, Zhou C. Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth. Nano Letters. 12: 2839-45. PMID 22594573 DOI: 10.1021/Nl300341V |
0.56 |
|
| 2012 |
Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR. InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays. Nano Letters. 12: 3257-62. PMID 22587013 DOI: 10.1021/Nl301307A |
0.791 |
|
| 2012 |
Li Y, Stewart LS, Dapkus PD. High speed silicon microring modulator employing dynamic intracavity energy balance. Optics Express. 20: 7404-14. PMID 22453420 DOI: 10.1364/Oe.20.007404 |
0.73 |
|
| 2012 |
Sburlan S, Nakano A, Dapkus PD. Effect of substrate strain on critical dimensions of highly lattice mismatched defect-free nanorods Journal of Applied Physics. 111. DOI: 10.1063/1.3688288 |
0.772 |
|
| 2011 |
Stewart LS, Dapkus PD. In-plane thermally tuned silicon on insulator wavelength selective reflector 2011 Ieee Winter Topicals, Wtm 2011. 123-124. DOI: 10.1109/PHOTWTM.2011.5730078 |
0.679 |
|
| 2011 |
Yeh TW, Stewart L, Chu HJ, Dapkus PD. GaN nanorods for improved light emitting diode performance 2011 Ieee Winter Topicals, Wtm 2011. 29-30. DOI: 10.1109/PHOTWTM.2011.5730030 |
0.752 |
|
| 2011 |
Yeh T, Dapkus PD, Lin Y, Stewart L, Ahn B, Nutt S. InGaN/GaN nanorod and nanosheet arrays for InGaN-based LEDs Photomedicine and Laser Surgery. 385-386. DOI: 10.1109/Pho.2011.6110589 |
0.768 |
|
| 2011 |
Chu HJ, Yeh T, Stewart L, Dapkus PD. III-V nanowire array growth by selective area epitaxy Aip Conference Proceedings. 1399: 225-226. DOI: 10.1063/1.3666336 |
0.691 |
|
| 2010 |
Chu HJ, Yeh TW, Stewart L, Dapkus PD. Wurtzite InP nanowire arrays grown by selective area MOCVD Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2494-2497. DOI: 10.1002/Pssc.200983910 |
0.791 |
|
| 2009 |
Lu L, Mock A, Hwang EH, O'Brien J, Dapkus PD. High-peak-power efficient edge-emitting photonic crystal nanocavity lasers. Optics Letters. 34: 2646-8. PMID 19724519 DOI: 10.1364/Ol.34.002646 |
0.395 |
|
| 2009 |
Lu L, Mock A, Yang T, Shih MH, Hwang EH, Bagheri M, Stapleton A, Farrell S, O’Brien J, Dapkus PD. 120μW peak output power from edge-emitting photonic crystal double-heterostructure nanocavity lasers Applied Physics Letters. 94: 111101. DOI: 10.1063/1.3097278 |
0.393 |
|
| 2008 |
Lu L, Mock A, Bagheri M, Hwang EH, O'Brien J, Dapkus PD. Double-heterostructure photonic crystal lasers with lower thresholds and higher slope efficiencies obtained by quantum well intermixing. Optics Express. 16: 17342-7. PMID 18958017 DOI: 10.1364/Oe.16.017342 |
0.425 |
|
| 2008 |
Li Y, Zhang L, Song M, Zhang B, Yang JY, Beausoleil RG, Willner AE, Dapkus PD. Coupled-ring-resonator-based silicon modulator for enhanced performance. Optics Express. 16: 13342-8. PMID 18711571 DOI: 10.1364/Oe.16.013342 |
0.554 |
|
| 2007 |
Shih MH, Mock A, Bagheri M, Suh NK, Farrell S, Choi SJ, O'Brien JD, Dapkus PD. Photonic crystal lasers in InGaAsP on a SiO(2)/Si substrates and its thermal impedance. Optics Express. 15: 227-32. PMID 19532238 DOI: 10.1364/Oe.15.000227 |
0.618 |
|
| 2007 |
Shih MH, Mock A, Bagheri M, Suh NK, Farrell S, Choi SJ, O'Brien JD, Dapkus PD. Photonic crystal lasers in InGaAsP on a SiO2/Si substrate and its thermal impedance Optics Express. 15: 227-232. DOI: 10.1364/OE.15.000227 |
0.581 |
|
| 2007 |
Khatsevich S, Rich DH, Zhang X, Dapkus PD. Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms Journal of Applied Physics. 102. DOI: 10.1063/1.2802291 |
0.475 |
|
| 2007 |
Stapleton A, Farrell S, Peng Z, Choi SJ, Christen L, O'Brien J, Dapkus PD, Willner A. Low vπ modulators containing InGaAsP/InP microdisk phase modulators Applied Physics Letters. 90. DOI: 10.1063/1.2728035 |
0.544 |
|
| 2006 |
Stapleton A, Farrell S, Akhavan H, Shafiiha R, Peng Z, Choi S, O’Brien J, Dapkus PD, Marshall W. Optical phase characterization of active semiconductor microdisk resonators in transmission Applied Physics Letters. 88: 031106. DOI: 10.1063/1.2165286 |
0.597 |
|
| 2006 |
Zhou W, Ren D, Dapkus PD. Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates Journal of Crystal Growth. 290: 11-17. DOI: 10.1016/J.Jcrysgro.2005.12.108 |
0.542 |
|
| 2006 |
O'Brien J, Shih MH, Yang T, Bagheri M, Marshall WK, Dapkus PD, Deppe DG. Photonic crystal devices 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 2: 727-730. |
0.519 |
|
| 2005 |
Kuang W, Cao JR, Yang T, Choi SJ, Lee PT, O'Brien JD, Dapkus PD. Classification of modes in suspended-membrane, 19-missing-hole photonic-crystal microcavities Journal of the Optical Society of America B: Optical Physics. 22: 1092-1099. DOI: 10.1364/Josab.22.001092 |
0.334 |
|
| 2005 |
Akhavan H, Stapleton A, Peng Z, Choi S, Shafiiha R, Farrell S, Bagheri M, Dapkus PD, O'Brien JD. Active Semiconductor Microdisk Vertically Coupled to a Waveguide Bus as a Polarization Rotator Frontiers in Optics. DOI: 10.1364/Fio.2005.Fwp2 |
0.577 |
|
| 2005 |
Dapkus PD, Choi SJ, Peng Z, Yang Q, Hwang EH, Chu HJ. VLSI Photonic Integrated Circuit Components Frontiers in Optics. DOI: 10.1364/Fio.2005.Fwp1 |
0.543 |
|
| 2005 |
Choi SJ, Peng Z, Yang Q, Dapkus PD. Bus-coupled microresonator lasers Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5738: 285-294. DOI: 10.1117/12.590836 |
0.523 |
|
| 2005 |
Shih MH, Kim WJ, Kuang W, Cao JR, Choi SJ, O'Brien JD, Dapkus PD. Experimental characterization of the reflectance of 60° waveguide bends in photonic crystal waveguides Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923169 |
0.574 |
|
| 2005 |
Ren D, Dapkus PD. Anisotropic Mg incorporation in GaN growth on nonplanar templates Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1870121 |
0.577 |
|
| 2005 |
Ren D, Zhou W, Dapkus PD. Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1866502 |
0.605 |
|
| 2005 |
Zhou W, Ren D, Dapkus PD. Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition Journal of Crystal Growth. 283: 31-40. DOI: 10.1016/J.Jcrysgro.2005.05.046 |
0.539 |
|
| 2004 |
Dapkus PD, Choi SJ, Sadogopan T, Yang Q, Peng Z, Choi SJ. Active semiconductor microresonators for photonic integrated circuits Frontiers in Optics. DOI: 10.1364/Fio.2004.Fwj1 |
0.57 |
|
| 2004 |
Wei Z, Cao JR, Deng Y, Choi S, Kuang W, O’Brien JD, Dapkus PD. Room Temperature 1.55µm Photonic Crystal Microcavity Lasers Integrated with AlGaAs Oxide Aperture Frontiers in Optics. DOI: 10.1364/Fio.2004.Fmk4 |
0.73 |
|
| 2004 |
Jang JW, Pyun SH, Lee SH, Lee IC, Jeong WG, Stevenson R, Dapkus PD, Kim NJ, Hwang MS, Lee D. Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers Applied Physics Letters. 85: 3675-3677. DOI: 10.1063/1.1812365 |
0.408 |
|
| 2004 |
Choi SJ, Peng Z, Yang Q, Dapkus PD. Tunable microdisk resonators vertically coupled to bus waveguides using epitaxial regrowth and wafer bonding techniques Applied Physics Letters. 84: 651-653. DOI: 10.1063/1.1644915 |
0.601 |
|
| 2004 |
Khatsevich S, Rich DH, Zhang X, Zhou W, Dapkus PD. Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence Journal of Applied Physics. 95: 1832-1842. DOI: 10.1063/1.1641146 |
0.463 |
|
| 2003 |
Choi SJ, Djordjev K, Dapkus PD. Microdisk lasers vertically coupled to output waveguides Ieee Photonics Technology Letters. 15: 1330-1332. DOI: 10.1109/Lpt.2003.817990 |
0.744 |
|
| 2003 |
Cao JR, Kuang W, Choi SJ, Lee PT, O'Brien JD, Dapkus PD. Threshold dependence on the spectral alignment between the quantum-well gain peak and the cavity resonance in InGaAsP photonic crystal lasers Applied Physics Letters. 83: 4107-4109. DOI: 10.1063/1.1627466 |
0.639 |
|
| 2002 |
Cao JR, Lee PT, Choi SJ, O'Brien JD, Dapkus PD. Lithographic fine-tuning of vertical cavity surface emitting laser-pumped two-dimensional photonic crystal lasers. Journal of Nanoscience and Nanotechnology. 2: 313-5. PMID 12908256 DOI: 10.1166/Jnn.2002.101 |
0.647 |
|
| 2002 |
Kim C, Kim WJ, Stapleton A, Cao J, O’Brien JD, Dapkus PD. Quality factors in single-defect photonic-crystal lasers with asymmetric cladding layers Journal of the Optical Society of America B. 19: 1777. DOI: 10.1364/Josab.19.001777 |
0.377 |
|
| 2002 |
Cao JR, Lee P, Choi S, Shafiiha R, Choi S, O’Brien JD, Dapkus PD. Nanofabrication of photonic crystal membrane lasers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 618. DOI: 10.1116/1.1458951 |
0.365 |
|
| 2002 |
Choi SJ, Djordjev K, Dapkus PD. CH4-based dry etching of high Q InP microdisks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 301-305. DOI: 10.1116/1.1445164 |
0.709 |
|
| 2002 |
Djordjev K, Choi SJ, Dapkus PD. Vertically coupled InP microdisk switching devices with electroabsorptive active regions Ieee Photonics Technology Letters. 14: 1115-1117. DOI: 10.1109/Lpt.2002.1021987 |
0.785 |
|
| 2002 |
Djordjev K, Choi SJ, Dapkus PD. Microdisk tunable resonant filters and switches Ieee Photonics Technology Letters. 14: 828-830. DOI: 10.1109/Lpt.2002.1003107 |
0.789 |
|
| 2002 |
Djordjev K, Choi SJ, Dapkus PD. Study of the effects of the geometry on the performance of vertically coupled InP microdisk resonators Journal of Lightwave Technology. 20: 1485-1492. DOI: 10.1109/Jlt.2002.800375 |
0.788 |
|
| 2002 |
Djordjev K, Choi SJ, Dapkus PD. High-Q vertically coupled InP microdisk resonators Ieee Photonics Technology Letters. 14: 331-333. DOI: 10.1109/68.986803 |
0.783 |
|
| 2002 |
Djordjev K, Choi SJ, Dapkus PD. Active semiconductor microdisk devices Journal of Lightwave Technology. 20: 105-113. DOI: 10.1109/50.974825 |
0.789 |
|
| 2002 |
Lee P, Cao JR, Choi S, Wei Z, O’Brien JD, Dapkus PD. Operation of photonic crystal membrane lasers above room temperature Applied Physics Letters. 81: 3311-3313. DOI: 10.1063/1.1517409 |
0.336 |
|
| 2002 |
Djordjev K, Choi SJ, Dapkus PD. Gain trimming of the resonant characteristics in vertically coupled InP microdisk switches Applied Physics Letters. 80: 3467-3469. DOI: 10.1063/1.1476701 |
0.799 |
|
| 2001 |
Lin CK, Dapkus PD. Uniform wafer-bonded oxide-confined bottom-emitting 850-nm VCSEL arrays on sapphire substrates Ieee Photonics Technology Letters. 13: 263-265. DOI: 10.1109/68.917819 |
0.333 |
|
| 2001 |
Painter O, Srinivasan K, O'Brien JD, Scherer A, Dapkus PD. Tailoring of the resonant mode properties of optical nanocavities in two-dimensional photonic crystal slab waveguides Journal of Optics a: Pure and Applied Optics. 3. DOI: 10.1088/1464-4258/3/6/367 |
0.382 |
|
| 2001 |
Jeong WG, Dapkus PD, Lee UH, Yim JS, Lee D, Lee BT. Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots Applied Physics Letters. 78: 1171-1173. DOI: 10.1063/1.1350620 |
0.387 |
|
| 2000 |
Ryu SW, Dapkus PD. Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates Electronics Letters. 36: 1387-1388. DOI: 10.1049/El:20000853 |
0.311 |
|
| 1999 |
Painter O, Lee RK, Scherer A, Yariv A, O'Brien JD, Dapkus PD, Kim I. Two-dimensional photonic band-Gap defect mode laser Science (New York, N.Y.). 284: 1819-21. PMID 10364550 DOI: 10.1126/Science.284.5421.1819 |
0.318 |
|
| 1999 |
Choi WJ, Dapkus PD, Jewell JJ. 1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition Ieee Photonics Technology Letters. 11: 1572-1574. DOI: 10.1109/68.806850 |
0.335 |
|
| 1999 |
Choi WJ, Dapkus PD. Self-defined AlAs oxide-current-aperture buried-heterostructure ridge waveguide InGaAs single-quantum-well diode laser Ieee Photonics Technology Letters. 11: 773-775. DOI: 10.1109/68.769703 |
0.312 |
|
| 1999 |
Kobayashi NP, Kobayashi JT, Zhang X, Dapkus PD, Rich DH. Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate Applied Physics Letters. 74: 2836-2838. DOI: 10.1063/1.124030 |
0.664 |
|
| 1998 |
Choi WJ, Dapkus PD. Self-defined AlAs-oxide-current-aperture buried heterostructure vertical cavity surface-emitting laser Applied Physics Letters. 73: 1661-1663. DOI: 10.1063/1.122238 |
0.379 |
|
| 1998 |
Kobayashi NP, Kobayashi JT, Choi WJ, Dapkus PD. Single-crystal α-GaN grown on a α-Ga2O3 template layer Applied Physics Letters. 73: 1553-1555. DOI: 10.1063/1.122218 |
0.552 |
|
| 1998 |
Zhang X, Rich DH, Kobayashi JT, Kobayashi NP, Dapkus PD. Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence Applied Physics Letters. 73: 1430-1432. DOI: 10.1063/1.121966 |
0.631 |
|
| 1998 |
Bond AE, Dapkus PD. Monolithically integrated surface and substrate emitting vertical cavity lasers for smart pixels Applied Physics Letters. 73: 19-21. DOI: 10.1063/1.121709 |
0.367 |
|
| 1998 |
Choi WJ, Dapkus PD. Selective growth and regrowth of high Al content AlGaAs for use in BH lasers Journal of Crystal Growth. 195: 495-502. DOI: 10.1016/S0022-0248(98)00682-4 |
0.412 |
|
| 1998 |
Kobayashi NP, Kobayashi JT, Choi W, Dapkus PD, Zhang X, Rich DH. Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer Journal of Crystal Growth. 189: 172-177. DOI: 10.1016/S0022-0248(98)00221-8 |
0.513 |
|
| 1998 |
Kobayashi JT, Kobayashi NP, Zhang X, Dapkus PD, Rich DH. Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD Journal of Crystal Growth. 195: 252-257. |
0.53 |
|
| 1997 |
Tsang W, Coleman J, Dapkus P, Coldren L. Introduction to the issue on optoelectronic materials and processing Ieee Journal of Selected Topics in Quantum Electronics. 3: 709-711. DOI: 10.1109/Jstqe.1997.640625 |
0.349 |
|
| 1997 |
Kobayashi NP, Kobayashi JT, Dapkus PD, Choi W, Bond AE, Zhang X, Rich DH. GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer Applied Physics Letters. 71: 3569-3571. DOI: 10.1063/1.120394 |
0.624 |
|
| 1997 |
Lin CK, Zhang X, Dapkus PD, Rich DH. Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique Applied Physics Letters. 71: 3108-3110. DOI: 10.1063/1.120261 |
0.484 |
|
| 1997 |
Zhu DX, Dubovitsky S, Steier WH, Burger J, Tishinin D, Uppal K, Dapkus PD. Ambipolar diffusion coefficient and carrier lifetime in a compressively strained InGaAsP multiple quantum well device Applied Physics Letters. 71: 647-649. DOI: 10.1063/1.119817 |
0.328 |
|
| 1997 |
Kobayashi JT, Kobayashi NP, Dapkus PD. Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach Journal of Electronic Materials. 26: 1114-1117. |
0.521 |
|
| 1997 |
Kobayashi JT, Kobayashi NP, Dapkus PD, Zhang X, Rich DH. Initial stages of MOCVD growth of gallium nitride using a multistep growth approach Materials Research Society Symposium - Proceedings. 468: 187-191. |
0.463 |
|
| 1997 |
Kobayashi JT, Kobayashi NP, Dapkus PD, Zhang X, Rich DH. Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor Leos Summer Topical Meeting. 10. |
0.477 |
|
| 1996 |
Cheng Y, Dapkus PD, MacDougal MH, Yang GM. Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide Ieee Photonics Technology Letters. 8: 176-178. DOI: 10.1109/68.484232 |
0.31 |
|
| 1996 |
Mathur A, Dapkus PD. Fabrication, characterization and analysis of low threshold current density 1.55-μm-strained quantum-well lasers Ieee Journal of Quantum Electronics. 32: 222-226. DOI: 10.1109/3.481869 |
0.303 |
|
| 1996 |
Yang GM, MacDougal MH, Dapkus PD. Effects of current spreading under oxide current aperture in vertical‐cavity surface‐emitting lasers Journal of Applied Physics. 80: 4837-4840. DOI: 10.1063/1.363525 |
0.347 |
|
| 1995 |
Li VOK, Willner AE, Dapkus PD, Lee K, Norte AD, Park E, Shieh W, Mathur A. Wavelength Conversion and Wavelength Routing for High-Efficiency All-Optical Networks: A Proposal for Research on All-Optical Networks Journal of High Speed Networks. 4: 5-25. DOI: 10.3233/Jhs-1995-4102 |
0.318 |
|
| 1995 |
Jow MY, Maa BY, Morishita T, Dapkus PD. Growth of GaAs by vacuum atomic layer epitaxy using tertiarybutylarsine Journal of Electronic Materials. 24: 25-29. DOI: 10.1007/Bf02659722 |
0.334 |
|
| 1994 |
Frateschi NC, Jow MY, Dapkus PD, Levi AFJ. InGaAs/GaAs quantum well lasers with dry-etched mirror passivated by vacuum atomic layer epitaxy Applied Physics Letters. 65: 1748-1750. DOI: 10.1063/1.112905 |
0.338 |
|
| 1994 |
Dapkus PD. Chapter 3 - Metalorganic Chemical Vapor Deposition for the Fabrication of Nanostructure Materials Vlsi Electronics Microstructure Science. 24: 63-106. DOI: 10.1016/B978-0-12-234124-3.50008-2 |
0.36 |
|
| 1993 |
Frateschi NC, Ou SS, Dapkus PD, Yang JJ, Jansen M. Low Threshold In GaAs/GaAs 45° Folded Cavity Surface-Emitting Laser Grown on Structured Substrates Ieee Photonics Technology Letters. 5: 741-743. DOI: 10.1109/68.229791 |
0.327 |
|
| 1993 |
Maa BY, Dapkus PD, Chen P, Madhukar A. Real-time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs Applied Physics Letters. 62: 2551-2553. DOI: 10.1063/1.109293 |
0.458 |
|
| 1993 |
Chen Q, Dapkus PD. Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium Thin Solid Films. 225: 115-119. DOI: 10.1016/0040-6090(93)90138-F |
0.314 |
|
| 1992 |
Frateschi NC, Osinski JS, Beyler CA, Dapkus PD. Low-Threshold Single-Quantum-Well InGaAs/GaAs Lasers Grown by Metal-Organic Chemical Vapor Deposition on Structured Substrates Ieee Photonics Technology Letters. 4: 209-212. DOI: 10.1109/68.122368 |
0.32 |
|
| 1992 |
Mathur A, Dapkus PD. Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers Applied Physics Letters. 61: 2845-2847. DOI: 10.1063/1.108052 |
0.406 |
|
| 1992 |
Chen Q, Beyler CA, Dapkus PD, Alwan JJ, Coleman JJ. Use of tertiarybutylarsine in atomic layer epitaxy and laser-assisted atomic layer epitaxy of device quality GaAs Applied Physics Letters. 60: 2418-2420. DOI: 10.1063/1.106991 |
0.507 |
|
| 1992 |
Frateschi NC, Dapkus PD. Growth of semiconductor laser structures with integrated epitaxial Bragg reflectors on non-planar substrates Journal of Crystal Growth. 124: 192-198. DOI: 10.1016/0022-0248(92)90459-V |
0.303 |
|
| 1991 |
Chen Q, Osinski JS, Beyler CA, Cao M, Dapkus PD, Alwan JJ, Coleman JJ. Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration Mrs Proceedings. 222. DOI: 10.1557/Proc-222-109 |
0.549 |
|
| 1991 |
Zou Y, Grodzinski P, Osinski JS, Dapkus PD. Photoluminescence study of critical thickness of pseudomorphic quantum wells grown on small area mesa stripes Applied Physics Letters. 58: 717-719. DOI: 10.1063/1.104525 |
0.397 |
|
| 1991 |
Grodzinski P, Zou Y, Osinski JS, Dapkus PD. Investigation of InxGa1-xAs/GaAs strained quantum well structures grown on non-planar substrates by MOCVD Journal of Crystal Growth. 107: 583-590. DOI: 10.1016/0022-0248(91)90525-A |
0.365 |
|
| 1990 |
Chen Q, Osinski JS, Dapkus PD. Quantum well lasers with active region grown by laser-assisted atomic layer epitaxy Applied Physics Letters. 57: 1437-1439. DOI: 10.1063/1.103363 |
0.332 |
|
| 1989 |
Menu EP, Dzurko KM, Dapkus PD. Element III Segregation During Mocvd Growth on Structured Substrates Mrs Proceedings. 145. DOI: 10.1557/Proc-145-131 |
0.369 |
|
| 1989 |
Hariz A, Dapkus PD, Lee HC, Menu EP, DenBaars SP. Minority-carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells Applied Physics Letters. 54: 635-637. DOI: 10.1063/1.100902 |
0.385 |
|
| 1987 |
Denbaars SP, Beyler CA, Hariz A, Dapkus PD. GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy Applied Physics Letters. 51: 1530-1532. DOI: 10.1063/1.98625 |
0.308 |
|
| 1987 |
Lee HC, Dzurko KM, Dapkus PD, Garmire E. Electroabsorption in AlGaAs/GaAs multiple quantum well structures grown on a GaP transparent substrate Applied Physics Letters. 51: 1582-1584. DOI: 10.1063/1.98561 |
0.315 |
|
| 1984 |
Kirillov D, Merz JL, Dapkus PD, Coleman JJ. Laser beam heating and transformation of a GaAs-AlAs multiple-quantum-well structure Journal of Applied Physics. 55: 1105-1109. DOI: 10.1063/1.333200 |
0.486 |
|
| 1983 |
Hsieh TC, Hess K, Coleman JJ, Dapkus PD. Carrier density distribution in modulation doped GaAs-AlxGa1-xAs quantum well heterostructures Solid State Electronics. 26: 1173-1176. DOI: 10.1016/0038-1101(83)90145-4 |
0.485 |
|
| 1982 |
Milano RA, Dapkus PD, Stillman GE. An Analysis of the Performance of Heterojunction Phototransistors for Fiber Optic Communications Ieee Transactions On Electron Devices. 29: 266-274. DOI: 10.1109/T-Ed.1982.20694 |
0.526 |
|
| 1982 |
Kasemset D, Hong CS, Patel NB, Dapkus PD. Very narrow graded-barrier single quantum well lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 41: 912-914. DOI: 10.1063/1.93352 |
0.3 |
|
| 1982 |
Kirchoefer SW, Holonyak N, Hess K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. Absorption measurements at high pressure on AlAs-AlxGa 1-xAs-GaAs superlattices Applied Physics Letters. 40: 821-824. DOI: 10.1063/1.93273 |
0.388 |
|
| 1982 |
Tabatabaie N, Stillman GE, Chin R, Dapkus PD. Tunneling in the reverse dark current of GaAlAsSb avalanche photodiodes Applied Physics Letters. 40: 415-417. DOI: 10.1063/1.93123 |
0.508 |
|
| 1982 |
Hong CS, Coleman JJ, Dapkus PD, Liu YZ. High-efficiency, low-threshold, Zn-diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 40: 208-210. DOI: 10.1063/1.93042 |
0.541 |
|
| 1982 |
Coleman JJ, Dapkus PD, Kirkpatrick CG, Camras MD, Holonyak N. Disorder of an AlAs‐GaAs superlattice by silicon implantation Applied Physics Letters. 40: 904-906. DOI: 10.1063/1.92942 |
0.395 |
|
| 1982 |
Tang JY, Hess K, Holonyak N, Coleman JJ, Dapkus PD. The dynamics of electron‐hole collection in quantum well heterostructures Journal of Applied Physics. 53: 6043-6046. DOI: 10.1063/1.331554 |
0.433 |
|
| 1982 |
Kirchoefer SW, Holonyak N, Hess K, Meehan K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. High pressure measurements on AlxGa1-xAs-GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers Journal of Applied Physics. 53: 6037-6042. DOI: 10.1063/1.331553 |
0.443 |
|
| 1982 |
Kirchoefer SW, Holonyak N, Coleman JJ, Dapkus PD. Zn diffusion and disordering of an AlAs-GaAs superlattice along its layers Journal of Applied Physics. 53: 766-768. DOI: 10.1063/1.329985 |
0.416 |
|
| 1982 |
Kirchoefer SW, Holonyak N, Hess K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. High pressure experiments on AlxGa1-xAs-GaAs quantum-well heterostructure lasers Solid State Communications. 42: 633-636. DOI: 10.1016/0038-1098(82)90807-9 |
0.465 |
|
| 1982 |
Hess KL, Dapkus PD, Manasevit HM, Low TS, Skromme BJ, Stillman GE. An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium Journal of Electronic Materials. 11: 1115-1137. DOI: 10.1007/Bf02658919 |
0.543 |
|
| 1981 |
Chin R, Nakano K, Coleman JJ, Dapkus PD. Gunn Oscillation in GaAs Optically Triggered by 1.06 µm Radiation Ieee Electron Device Letters. 2: 248-249. DOI: 10.1109/Edl.1981.25420 |
0.445 |
|
| 1981 |
Hong CS, Liu YZ, Dapkus PD, Coleman JJ. Controlled Zn Diffusion for Low Threshold Narrow Stripe GaAlAs/GaAs DH Lasers Ieee Electron Device Letters. 2: 225-227. DOI: 10.1109/Edl.1981.25412 |
0.472 |
|
| 1981 |
Holonyak N, Laidig WD, Hess K, Coleman JJ, Dapkus PD. Holonyak et al. Respond Physical Review Letters. 46: 1043. DOI: 10.1103/Physrevlett.46.1043 |
0.338 |
|
| 1981 |
Holonyak N, Laidig WD, Camras MD, Coleman JJ, Dapkus PD. IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity Applied Physics Letters. 39: 102-104. DOI: 10.1063/1.92536 |
0.509 |
|
| 1981 |
Anderson ER, Vojak BA, Holonyak N, Stillman GE, Coleman JJ, Dapkus PD. Transient and noise characteristics of quantum‐well heterostructure lasers Applied Physics Letters. 38: 585-587. DOI: 10.1063/1.92463 |
0.642 |
|
| 1981 |
Dapkus PD, Coleman JJ, Laidig WD, Holonyak N, Vojak BA, Hess K. Continuous room-temperature photopumped laser operation of modulation-doped AlxGa1-xAs/GaAs superlattices Applied Physics Letters. 38: 118-120. DOI: 10.1063/1.92295 |
0.53 |
|
| 1981 |
Coleman JJ, Dapkus PD, Holonyak N, Laidig WD. Device-quality epitaxial AlAs by metalorganic-chemical vapor deposition Applied Physics Letters. 38: 894-896. DOI: 10.1063/1.92219 |
0.513 |
|
| 1981 |
Laidig WD, Holonyak N, Camras MD, Hess K, Coleman JJ, Dapkus PD, Bardeen J. Disorder of an AlAs-GaAs superlattice by impurity diffusion Applied Physics Letters. 38: 776-778. DOI: 10.1063/1.92159 |
0.42 |
|
| 1981 |
Vojak BA, Laidig WD, Holonyak N, Camras MD, Coleman JJ, Dapkus PD. HIGH-ENERGY (VISIBLE-RED) STIMULATED EMISSION IN GaAs. Journal of Applied Physics. 52: 621-626. DOI: 10.1063/1.328832 |
0.509 |
|
| 1981 |
Vojak BA, Holonyak N, Laidig WD, Hess K, Coleman JJ, Dapkus PD. PHONON CONTRIBUTION TO METALORGANIC CHEMICAL VAPOR DEPOSITED Al//x Ga//1// minus //xAs-GaAs QUANTUM-WELL HETEROSTRUCTURE LASER OPERATION. Journal of Applied Physics. 52: 959-968. DOI: 10.1063/1.328786 |
0.546 |
|
| 1981 |
Coleman JJ, Dapkus PD, Camras MD, Holonyak N, Laidig WD, Low TS, Burroughs MS, Hess K. ABSORPTION, STIMULATED EMISSION, AND CLUSTERING IN AlAs-Al//xGa//1// minus //xAs-GaAs SUPERLATTICES. Journal of Applied Physics. 52: 7291-7295. DOI: 10.1063/1.328717 |
0.469 |
|
| 1981 |
Holonyak N, Laidig WD, Camras MD, Hess K, Burroughs MS, Coleman JJ, Dapkus PD. SIZE FLUCTUATIONS AND HIGH-ENERGY LASER OPERATION OF Al//xGa//1// minus //xAs-AlAs-GaAs QUANTUM-WELL HETEROSTRUCTURES. Journal of Applied Physics. 52: 6777-6782. DOI: 10.1063/1.328631 |
0.485 |
|
| 1981 |
Laidig WD, Holonyak N, Camras MD, Vojak BA, Hess K, Coleman JJ, Dapkus PD. Quenching of stimulated phonon emission in AlxGa1-xAs-GaAs quantum-well heterostructures Solid State Communications. 38: 301-304. DOI: 10.1016/0038-1098(81)90466-X |
0.519 |
|
| 1981 |
Coleman JJ, Dapkus PD, Thompson DE, Clarke DR. The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structures Journal of Crystal Growth. 55: 207-212. DOI: 10.1016/0022-0248(81)90289-X |
0.489 |
|
| 1981 |
Dapkus PD, Manasevit HM, Hess KL, Low TS, Stillman GE. High purity GaAs prepared from trimethylgallium and arsine Journal of Crystal Growth. 55: 10-23. DOI: 10.1016/0022-0248(81)90265-7 |
0.55 |
|
| 1981 |
Coleman JJ, Dapkus PD, Yang JJJ. SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOUR DEPOSITION Electronics Letters. 17: 606-608. |
0.452 |
|
| 1980 |
Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. Quantum-Well Heterostructure Lasers Ieee Journal of Quantum Electronics. 16: 170-186. DOI: 10.1109/Jqe.1980.1070447 |
0.596 |
|
| 1980 |
Holonyak N, Laidig WD, Vojak BA, Hess K, Coleman JJ, Dapkus PD, Bardeen J. Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures Physical Review Letters. 45: 1703-1706. DOI: 10.1103/Physrevlett.45.1703 |
0.62 |
|
| 1980 |
Coleman JJ, Dapkus PD. Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasers Applied Physics Letters. 37: 262-263. DOI: 10.1063/1.91900 |
0.511 |
|
| 1980 |
Holonyak N, Vojak BA, Laidig WD, Hess K, Coleman JJ, Dapkus PD. Phonon contribution to double-heterojunction laser operation Applied Physics Letters. 37: 136-138. DOI: 10.1063/1.91792 |
0.51 |
|
| 1980 |
Coleman JJ, Dapkus PD, Vojak BA, Laidig WD, Holonyak N, Hess K. Induced phonon-sideband laser operation of large-quantum-well Al xGa1-xAs-GaAs heterostructures (Lz ∼200-500 Å) Applied Physics Letters. 37: 15-17. DOI: 10.1063/1.91683 |
0.523 |
|
| 1980 |
Hess K, Holonyak N, Laidig WD, Vojak BA, Coleman JJ, Dapkus PD. Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures Solid State Communications. 34: 749-752. DOI: 10.1016/0038-1098(80)90906-0 |
0.493 |
|
| 1979 |
Dupuis RD, Kolbas RM, Dapkus PD, Holonyak N. Quantum-Well AlxGa1-xAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition Ieee Journal of Quantum Electronics. 15: 756-761. DOI: 10.1109/Jqe.1979.1070091 |
0.612 |
|
| 1979 |
Dupuis RD, Dapkus PD, Holonyak N, Kolbas RM. Continuous room-temperature multiple-quantum-well AlxGa 1-xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 35: 487-489. DOI: 10.1063/1.91206 |
0.612 |
|
| 1978 |
Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. MP-B1 Photopumped MO-CVD Quantum-Well Al<inf>x</inf>Ga<inf>1−x</inf>As GaAs-AlxGa<inf>1−x</inf>As Heterostructure Lasers (x = 0.4–0.6, Lz ⩽ 200 Å T = 4.2–300 K) Ieee Transactions On Electron Devices. 25: 1342. DOI: 10.1109/T-Ed.1978.19293 |
0.627 |
|
| 1978 |
Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. Room-temperature continuous operation of photopumped MO-CVD Al xGa1-xAs-GaAs-AlxGa1-xAs quantum-well lasers Applied Physics Letters. 33: 73-75. DOI: 10.1063/1.90150 |
0.597 |
|
| 1978 |
Dupuis RD, Dapkus PD, Kolbas RM, Holonyak N. Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å) Solid State Communications. 27: 531-533. DOI: 10.1016/0038-1098(78)90388-5 |
0.553 |
|
| 1976 |
Dapkus PD, Henry CH. Degradation of bulk luminescence in GaP : Zn,O induced by laser excitation Journal of Applied Physics. 47: 4061-4066. DOI: 10.1063/1.323236 |
0.307 |
|
| 1970 |
Keune DL, Holonyak N, Burnham RD, Dapkus PD, Dupuis RD. THIN SEMICONDUCTOR LASER TO THIN PLATELET OPTICAL COUPLER Applied Physics Letters. 16: 18-20. DOI: 10.1063/1.1653015 |
0.464 |
|
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