| Year |
Citation |
Score |
| 2020 |
Wang Z, Opila RL. In operando x-ray photoelectron spectroscopy study of mechanism of atomic layer etching of cobalt Journal of Vacuum Science and Technology. 38: 22611. DOI: 10.1116/1.5138989 |
0.358 |
|
| 2020 |
Mortazavi S, Mollabashi M, Barri R, Gundlach L, Jones K, Xiao JQ, Opila RL, Shah SI. Ti:Sapphire laser irradiation of graphene oxide film in order to tune its structural, chemical and electrical properties: Patterning and characterizations Applied Surface Science. 500: 144053. DOI: 10.1016/J.Apsusc.2019.144053 |
0.574 |
|
| 2019 |
Konh M, He C, Lin X, Guo X, Pallem V, Opila RL, Teplyakov AV, Wang Z, Yuan B. Molecular mechanisms of atomic layer etching of cobalt with sequential exposure to molecular chlorine and diketones. Journal of Vacuum Science & Technology. a, Vacuum, Surfaces, and Films : An Official Journal of the American Vacuum Society. 37: 021004. PMID 30940989 DOI: 10.1116/1.5082187 |
0.359 |
|
| 2019 |
Zeng Y, Khandelwal S, Shariar KF, Wang Z, Lin G, Cheng Q, Cui P, Opila R, Balakrishnan G, Addamane S, Taheri P, Kiriya D, Hettick M, Javey A. InAs FinFETs Performance Enhancement by Superacid Surface Treatment Ieee Transactions On Electron Devices. 66: 1856-1861. DOI: 10.1109/Ted.2019.2901281 |
0.322 |
|
| 2019 |
Valdes NH, Jones KJ, Opila RL, Shafarman WN. Influence of Ga and Ag on the KF Treatment Chemistry for CIGS Solar Cells Ieee Journal of Photovoltaics. 9: 1846-1851. DOI: 10.1109/Jphotov.2019.2930210 |
0.309 |
|
| 2019 |
Shariar KF, Lin G, Wang Z, Cui P, Zhang J, Opila R, Zeng Y. Effect of bistrifluoromethane sulfonimide treatment on nickel/InAs contacts Applied Physics A. 125. DOI: 10.1007/S00339-019-2705-7 |
0.377 |
|
| 2018 |
Chen M, Hack JH, Lin X, Janotti A, Opila RL. Electronic Structure Characterization of Hydrogen Terminated n-type Silicon Passivated by Benzoquinone-Methanol Solutions The Coatings. 8: 108. DOI: 10.3390/Coatings8030108 |
0.423 |
|
| 2018 |
Iyer A, Hack J, Angel Trujillo D, Tew B, Zide J, Opila R. Effects of Co-Solvents on the Performance of PEDOT:PSS Films and Hybrid Photovoltaic Devices Applied Sciences. 8: 2052. DOI: 10.3390/App8112052 |
0.388 |
|
| 2018 |
Lin X, Chen M, Janotti A, Opila R. In situ XPS study on atomic layer etching of Fe thin film using Cl2 and acetylacetone Journal of Vacuum Science and Technology. 36: 51401. DOI: 10.1116/1.5039517 |
0.364 |
|
| 2018 |
Mortazavi S, Mollabashi M, Barri R, Jones K, Xiao JQ, Opila R, Shah SI. Modification of graphene oxide film properties using KrF laser irradiation Rsc Advances. 8: 12808-12814. DOI: 10.1039/C8Ra00097B |
0.552 |
|
| 2017 |
Hastir A, Opila RL, Kohli N, Onuk Z, Yuan B, Jones K, Virpal, Singh RC. Deposition, characterization and gas sensors application of RF magnetron-sputtered terbium-doped ZnO films Journal of Materials Science. 52: 8502-8517. DOI: 10.1007/S10853-017-1059-9 |
0.388 |
|
| 2015 |
Church JR, Weiland C, Opila RL. Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy Applied Physics Letters. 106. DOI: 10.1063/1.4919448 |
0.658 |
|
| 2015 |
Diaz M, Wang L, Li D, Zhao X, Conrad B, Soeriyadi A, Gerger A, Lochtefeld A, Ebert C, Opila R, Perez-Wurfl I, Barnett A. Tandem GaAsP/SiGe on Si solar cells Solar Energy Materials and Solar Cells. 143: 113-119. DOI: 10.1016/J.Solmat.2015.06.033 |
0.409 |
|
| 2015 |
Li D, Zhao X, Gerger A, Opila R, Wang L, Conrad B, Soeriyadi AH, Diaz M, Lochtefeld A, Barnett A, Perez-Wurfl I. Optical constants of silicon germanium films grown on silicon substrates Solar Energy Materials and Solar Cells. 140: 69-76. DOI: 10.1016/J.Solmat.2015.03.031 |
0.403 |
|
| 2015 |
Schmieder KJ, Gerger A, Diaz M, Pulwin Z, Curtin M, Wang L, Ebert C, Lochtefeld A, Opila RL, Barnett A. GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance Materials Science in Semiconductor Processing. 39: 614-620. DOI: 10.1016/J.Mssp.2015.05.058 |
0.746 |
|
| 2015 |
Kotulak NA, Chen M, Schreiber N, Jones K, Opila RL. Examining the free radical bonding mechanism of benzoquinone- and hydroquinone-methanol passivation of silicon surfaces Applied Surface Science. 354: 469-474. DOI: 10.1016/J.Apsusc.2015.02.127 |
0.777 |
|
| 2014 |
Huang SR, Lu X, Barnett A, Opila RL, Mogili V, Tanner DA, Nakahara S. Characterization of the microstructure of GaP films grown on {111} Si by liquid phase epitaxy. Acs Applied Materials & Interfaces. 6: 18626-34. PMID 25300064 DOI: 10.1021/Am503448G |
0.62 |
|
| 2014 |
Cui J, Wang X, Opila R, Lennon A. Characterization of Silicon Oxides Formed by Light-Induced Anodisation for Silicon Solar Cell Surface Passivation Mrs Proceedings. 1647. DOI: 10.1557/OPL.2014.350 |
0.346 |
|
| 2014 |
Wang L, Lochtefeld A, Han J, Gerger AP, Carroll M, Ji J, Lennon A, Li H, Opila R, Barnett A. Development of a 16.8% Efficient 18-μm Silicon Solar Cell on Steel Ieee Journal of Photovoltaics. 4: 1397-1404. DOI: 10.1109/Jphotov.2014.2344769 |
0.412 |
|
| 2014 |
Kotulak NA, Diaz M, Barnett A, Opila RL. Toward a tandem gallium phosphide on silicon solar cell through liquid phase epitaxy growth Thin Solid Films. 556: 236-240. DOI: 10.1016/J.Tsf.2014.01.073 |
0.8 |
|
| 2014 |
Weiland C, Krajewski J, Opila R, Pallem V, Dussarrat C, Woicik JC. Nondestructive compositional depth profiling using variable-kinetic energy hard X-ray photoelectron spectroscopy and maximum entropy regularization Surface and Interface Analysis. 46: 407-417. DOI: 10.1002/Sia.5517 |
0.706 |
|
| 2013 |
Çopuroğlu M, Sezen H, Opila RL, Suzer S. Band-bending at buried SiO2/Si interface as probed by XPS. Acs Applied Materials & Interfaces. 5: 5875-81. PMID 23772791 DOI: 10.1021/Am401696E |
0.417 |
|
| 2013 |
Schmieder KJ, Gerger A, Pulwin Z, Wang L, Diaz M, Curtin M, Ebert C, Lochtefeld A, Opila RL, Barnett A. GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2462-2465. DOI: 10.1109/PVSC.2013.6744974 |
0.742 |
|
| 2013 |
Hao R, Murcia CP, Leitz C, Gerger AP, Lochtefeld A, Curtin M, Shreve K, Opila R, Barnett A. Investigating voltage as a function of the reduced junction area for thin silicon solar cells that utilize epitaxial lateral overgrowth Ieee Journal of Photovoltaics. 3: 119-124. DOI: 10.1109/Jphotov.2012.2211999 |
0.38 |
|
| 2013 |
Lu X, Hao R, Diaz M, Opila RL, Barnett A. Improving GaP solar cell performance by passivating the surface using AlxGa1-xP epi-layer Ieee Journal of the Electron Devices Society. 1: 111-116. DOI: 10.1109/Jeds.2013.2266410 |
0.421 |
|
| 2013 |
Cui J, Wang X, Opila R, Lennon A. Light-induced anodisation of silicon for solar cell passivation Journal of Applied Physics. 114: 184101. DOI: 10.1063/1.4829701 |
0.404 |
|
| 2013 |
Haughn CR, Schmieder KJ, Zide JMO, Barnett A, Ebert C, Opila R, Doty MF. Quantification of trap state densities in GaAs heterostructures grown at varying rates using intensity-dependent time resolved photoluminescence Applied Physics Letters. 102. DOI: 10.1063/1.4802841 |
0.706 |
|
| 2013 |
Wang Y, Gerger A, Lochtefeld A, Wang L, Kerestes C, Opila R, Barnett A. Design, fabrication and analysis of germanium: Silicon solar cell in a multi-junction concentrator system Solar Energy Materials and Solar Cells. 108: 146-155. DOI: 10.1016/J.Solmat.2012.08.016 |
0.421 |
|
| 2012 |
Karar N, Opila R, Beebe T, Toader O, Naab F. TOF-SIMS analysis of InGaN/GaN for expected doping profiles Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.008204Jss |
0.363 |
|
| 2012 |
Weiland CR, Yang L, Doren DJ, Menning CA, Skliar D, Willis BG, Chen JG, Opila RL. Binding of styrene on silicon (111)-7 × 7 surfaces as a model molecular electronics system Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3701712 |
0.605 |
|
| 2012 |
Opila RL, Yang D, Kotulak N, Costello L, Chhabra B. Mechanism of electrical passivation of Si surfaces with quinhydrone Conference Record of the Ieee Photovoltaic Specialists Conference. 2583-2587. DOI: 10.1109/PVSC.2012.6318123 |
0.594 |
|
| 2012 |
Lu X, Huang S, Diaz MB, Kotulak N, Hao R, Opila R, Barnett A. Wide Band Gap Gallium Phosphide Solar Cells Ieee Journal of Photovoltaics. 2: 214-220. DOI: 10.1109/Jphotov.2011.2182180 |
0.781 |
|
| 2012 |
Jampana BR, Weiland CR, Opila RL, Ferguson IT, Honsberg CB. Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire Thin Solid Films. 520: 6807-6812. DOI: 10.1016/J.Tsf.2012.07.003 |
0.792 |
|
| 2012 |
Doniat F, Anderson C, Dussarrat C, McAndrew J, Opila R, Wright B, Yang D. Development of low-k precursors for next generation IC manufacturing Microelectronic Engineering. 92: 34-37. DOI: 10.1016/J.Mee.2011.05.040 |
0.303 |
|
| 2012 |
Tian F, Yang D, Opila RL, Teplyakov AV. Chemical and electrical passivation of Si(1 1 1) surfaces Applied Surface Science. 258: 3019-3026. DOI: 10.1016/J.Apsusc.2011.11.030 |
0.382 |
|
| 2012 |
Hannigan K, Reid M, Collins MN, Dalton E, Xu C, Wright B, Demirkan K, Opila RL, Reents WD, Franey JP, Fleming DA, Punch J. Corrosion of RoHS-compliant surface finishes in corrosive mixed flowing gas environments Journal of Electronic Materials. 41: 611-623. DOI: 10.1007/S11664-011-1799-2 |
0.699 |
|
| 2011 |
Polyakova Stolyarova EY, Rim KT, Eom D, Douglass K, Opila RL, Heinz TF, Teplyakov AV, Flynn GW. Scanning tunneling microscopy and X-ray photoelectron spectroscopy studies of graphene films prepared by sonication-assisted dispersion. Acs Nano. 5: 6102-8. PMID 21726071 DOI: 10.1021/Nn1009352 |
0.304 |
|
| 2011 |
Karar N, Opila R, Beebe T. Wet Etching and Surface Analysis of Chemically Treated InGaN Films Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3574036 |
0.381 |
|
| 2011 |
Fang F, Opila RL, Venkatasubramanian R, Colpitts T. Preparation of clean Bi 2 Te 3 and Sb 2 Te 3 thin films to determine alignment at valence band maxima Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3581053 |
0.433 |
|
| 2011 |
Bremner SP, Nataraj L, Cloutier SG, Weiland C, Pancholi A, Opila R. Use of Sb spray for improved performance of InAs/GaAs quantum dots for novel photovoltaic structures Solar Energy Materials and Solar Cells. 95: 1665-1670. DOI: 10.1016/J.Solmat.2011.01.026 |
0.603 |
|
| 2011 |
Chhabra B, Weiland C, Opila RL, Honsberg CB. Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy Physica Status Solidi (a) Applications and Materials Science. 208: 86-90. DOI: 10.1002/Pssa.201026101 |
0.747 |
|
| 2010 |
Demirkan K, Derkits GE, Fleming DA, Franey JP, Hannigan K, Opila RL, Punch J, Reents WD, Reid M, Wright B, Xu C. Corrosion of Cu under highly corrosive environments Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3258288 |
0.677 |
|
| 2010 |
Baer DR, Engelhard MH, Lea AS, Nachimuthu P, Droubay TC, Kim J, Lee B, Mathews C, Opila RL, Saraf LV, Stickle WF, Wallace RM, Wright BS. Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 1060-1072. DOI: 10.1116/1.3456123 |
0.361 |
|
| 2010 |
Huang SR, Lu X, Barnett A, Opila RL. Gallium phosphide epitaxial films for silicon based multi-junction solar cells grown by liquid phase epitaxy Conference Record of the Ieee Photovoltaic Specialists Conference. 3343-3346. DOI: 10.1109/PVSC.2010.5617118 |
0.605 |
|
| 2010 |
Lu X, Huang SR, Diaz M, Opila RL, Barnett A. Wide band gap gallium phosphide solar cells for multi-junction solar cell system Conference Record of the Ieee Photovoltaic Specialists Conference. 2079-2083. DOI: 10.1109/PVSC.2010.5616636 |
0.568 |
|
| 2010 |
Chhabra B, Kamada R, Opila RL, Honsberg CB. Effect of small continuous loads on system efficiency Conference Record of the Ieee Photovoltaic Specialists Conference. 2327-2331. DOI: 10.1109/PVSC.2010.5614448 |
0.503 |
|
| 2010 |
Chhabra B, Opila RL, Honsberg CB. 12.4% efficient freestanding 30μm ultra-thin silicon solar cell using a-Si/c-Si heterostructure Conference Record of the Ieee Photovoltaic Specialists Conference. 1325-1329. DOI: 10.1109/PVSC.2010.5614352 |
0.646 |
|
| 2010 |
Wang Y, Lochtefeld A, Par JS, Kerestes C, Opila R, Barnett A. Optimization of multi-junction solar cell performance at infrared light by application of thin film Si:Ge solar cell Conference Record of the Ieee Photovoltaic Specialists Conference. 2987-2991. DOI: 10.1109/PVSC.2010.5614057 |
0.301 |
|
| 2010 |
Jampana BR, Melton AG, Jamil M, Faleev NN, Opila RL, Ferguson IT, Honsberg CB. Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell Ieee Electron Device Letters. 31: 32-34. DOI: 10.1109/Led.2009.2034280 |
0.792 |
|
| 2010 |
Wang WG, Ni C, Miao GX, Weiland C, Shah LR, Fan X, Parson P, Jordan-Sweet J, Kou XM, Zhang YP, Stearrett R, Nowak ER, Opila R, Moodera JS, Xiao JQ. Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.144406 |
0.582 |
|
| 2010 |
Chhabra B, Kamada R, Opila RL, Honsberg CB. Effect of small continuous loads on inverter and system efficiency Journal of Renewable and Sustainable Energy. 2. DOI: 10.1063/1.3455052 |
0.548 |
|
| 2010 |
Chhabra B, Bowden S, Opila RL, Honsberg CB. High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation Applied Physics Letters. 96. DOI: 10.1063/1.3309595 |
0.654 |
|
| 2010 |
Douglass K, Hunt S, Teplyakov A, Opila RL. Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire Applied Surface Science. 257: 1469-1472. DOI: 10.1016/J.Apsusc.2010.08.074 |
0.351 |
|
| 2009 |
Jampana BR, Faleev NN, Ferguson IT, Opila RL, Honsberg CB. Crystalline perfection of epitaxial structure: Correlation with composition, thickness, and elastic strain of epitaxial layers Materials Research Society Symposium Proceedings. 1167: 71-76. DOI: 10.1557/Proc-1167-O07-04 |
0.794 |
|
| 2009 |
Jampana BR, Ferguson IT, Opila RL, Honsberg CB. Utilizing polarization induced band bending for InGaN solar cell design Materials Research Society Symposium Proceedings. 1167: 3-8. DOI: 10.1557/Proc-1167-O01-04 |
0.799 |
|
| 2009 |
Huang SR, Lu X, Barnett A, Opila RL. GaP films grown on Si by liquid phase epitaxy Conference Record of the Ieee Photovoltaic Specialists Conference. 000241-000243. DOI: 10.1109/PVSC.2009.5411689 |
0.612 |
|
| 2009 |
Chhabra B, Honsberg CB, Opila RL. High open circuit voltages on < 50 micron silicon substrates by amorphous-silicon (a-Si) and quinhydrone-methanol (QHY-ME) passivation Conference Record of the Ieee Photovoltaic Specialists Conference. 002187-002190. DOI: 10.1109/PVSC.2009.5411398 |
0.599 |
|
| 2009 |
Lu X, Huang SR, Opila RL, Barnett A. Gallium phosphide solar cells for multi-juntion systems Conference Record of the Ieee Photovoltaic Specialists Conference. 000968-000971. DOI: 10.1109/PVSC.2009.5411128 |
0.569 |
|
| 2009 |
Bao L, Ryley J, Li Z, Wilker C, Zhang L, Reardon D, Opila R. Conduction mechanism of sputtered BaTiO3 film on Ni substrate Journal of Applied Physics. 106: 114114. DOI: 10.1063/1.3254194 |
0.607 |
|
| 2009 |
Faleev N, Jampana B, Jani O, Yu H, Opila R, Ferguson I, Honsberg C. Correlation of crystalline defects with photoluminescence of InGaN layers Applied Physics Letters. 95: 51915. DOI: 10.1063/1.3202409 |
0.796 |
|
| 2009 |
Sustersic N, Nataraj L, Weiland C, Coppinger M, Shaleev MV, Novikov AV, Opila R, Cloutier SG, Kolodzey J. Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3114377 |
0.58 |
|
| 2009 |
Perrine KA, Leftwich TR, Weiland CR, Madachik MR, Opila RL, Teplyakov AV. Reactions of aromatic bifunctional molecules on silicon surfaces: nitrosobenzene and nitrobenzene Journal of Physical Chemistry C. 113: 6643-6653. DOI: 10.1021/Jp8082826 |
0.619 |
|
| 2009 |
Opila RL. Electron spectroscopies for simultaneous chemical and electrical analysis Applied Surface Science. 256: 1313-1315. DOI: 10.1016/J.Apsusc.2009.10.048 |
0.333 |
|
| 2008 |
Demirkan K, Mathew A, Weiland C, Yao Y, Rawlett AM, Tour JM, Opila RL. Energy level alignment at organic semiconductor/metal interfaces: effect of polar self-assembled monolayers at the interface. The Journal of Chemical Physics. 128: 074705. PMID 18298162 DOI: 10.1063/1.2832306 |
0.792 |
|
| 2008 |
Burrows MZ, Das UK, Bowden S, Hegedus SS, Opila RL, Birkmire RW. Improved passivation of a-Si:H / c-Si interfaces through film restructuring Materials Research Society Symposium Proceedings. 1066: 41-46. DOI: 10.1557/Proc-1066-A02-05 |
0.426 |
|
| 2008 |
Jampana BR, Jani OK, Hongbo Y, Ferguson IT, McCandless BE, Hegedus SS, Opila RL, Honsberg CB. Nitride based Schottky-barrier photovoltaic devices Materials Research Society Symposium Proceedings. 1040: 207-212. DOI: 10.1557/Proc-1040-Q09-27 |
0.761 |
|
| 2008 |
Burrows MZ, Das UK, Opila RL, De Wolf S, Birkmire RW. Role of hydrogen bonding environment in a-Si:H films for c-Si surface passivation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 683-687. DOI: 10.1116/1.2897929 |
0.424 |
|
| 2008 |
Huang SR, Lu X, Wang X, Barnett AM, Opila RL. Window layer properties of GaP films grown on Si by liquid phase epitaxy Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922906 |
0.624 |
|
| 2008 |
Chhabra B, Suzer S, Opila RL, Honsberg CB. Electrical and chemical characterization of chemically passivated silicon surfaces Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922673 |
0.612 |
|
| 2008 |
Wang WG, Yee KJ, Kim DH, Han KJ, Wang XR, Ni C, Moriyama T, Mathew A, Opila R, Zhu T, Xiao JQ. Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering Physical Review B. 77. DOI: 10.1103/Physrevb.77.155207 |
0.571 |
|
| 2008 |
Demirkan K, Mathew A, Weiland C, Reid M, Opila RL. Reactivity and morphology of vapor-deposited Al/polymer interfaces for organic semiconductor devices Journal of Applied Physics. 103. DOI: 10.1063/1.2837883 |
0.792 |
|
| 2008 |
Lu P, Demirkan K, Opila RL, Walker AV. Room-temperature chemical vapor deposition of aluminum and aluminum oxides on alkanethiolate self-assembled monolayers Journal of Physical Chemistry C. 112: 2091-2098. DOI: 10.1021/Jp077100C |
0.727 |
|
| 2008 |
Willis BG, Mathew A, Wielunski LS, Opila RL. Adsorption and reaction of HfCl4 with H2O-terminated Si(100)-2×1 Journal of Physical Chemistry C. 112: 1994-2003. DOI: 10.1021/Jp0758317 |
0.567 |
|
| 2005 |
Dcmirkan K, Mathew A, Opila RL. Photoelectron spectroscopy investigation of interface formation between poly(2-methoxy-5-(2′-ethyl-hexyloxy)- 1,4-phenylene vinylene) and aluminum Materials Research Society Symposium Proceedings. 871: 353-358. DOI: 10.1557/Proc-871-I9.21 |
0.553 |
|
| 2005 |
Mathew A, Demirkan K, Wang CG, Wilk GD, Watson DG, Opila RL. X-ray photoelectron spectroscopy of high-κ dielectrics Aip Conference Proceedings. 788: 85-91. DOI: 10.1063/1.2062943 |
0.748 |
|
| 2005 |
Mathew A, Demirkan K, Opila RL, Wang CG, Maes JW, Wilk G. Investigation of nitrided hafnium silicates for high-k dielectrics using photoelectron spectroscopy Proceedings - Electrochemical Society. 360-365. |
0.737 |
|
| 2004 |
Addo EA, Shah SI, Opila R, Barnett AM, Allison K, Sulima O. Doped self-aligned metallization for solar cells Journal of Materials Research. 19: 986-995. DOI: 10.1557/Jmr.2004.0129 |
0.791 |
|
| 2004 |
Labelle CB, Donnelly VM, Bogart GR, Opila RL, Kornblit A. Investigation of fluorocarbon plasma deposition from c-C 4F 8 for use as passivation during deep silicon etching Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2500-2507. DOI: 10.1116/1.1810165 |
0.323 |
|
| 2004 |
Lita B, Pluchery O, Opila RL, Chabal YJ, Bunea G, Holman JP, Bekos EJ. Wet chemical cleaning of plasma oxide grown on heated (001) InP surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1885-1892. DOI: 10.1116/1.1774202 |
0.33 |
|
| 2003 |
Pluchery O, Chabal YJ, Opila RL. Wet chemical cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopy Journal of Applied Physics. 94: 2707-2715. DOI: 10.1063/1.1596719 |
0.36 |
|
| 2003 |
Park KT, Miller A, Klier K, Opila RL, Rowe JE. Heteroepitaxial copper phthalocyanine on Au(0 0 1) studied by high-resolution X-ray photoelectron spectroscopy Surface Science. 529. DOI: 10.1016/S0039-6028(03)00274-7 |
0.381 |
|
| 2003 |
Demirkan K, Mathew A, Opila RL. Photoelectron spectroscopy investigation of high-k dielectrics Proceedings - Electrochemical Society. 22: 299-306. |
0.764 |
|
| 2002 |
Baur K, Brennan S, Pianetta P, Opila R. Looking at trace impurities on silicon wafers with synchrotron radiation. Analytical Chemistry. 74: 608A-616A. PMID 12498179 DOI: 10.1021/Ac022159V |
0.339 |
|
| 2002 |
Fisher GL, Walker AV, Hooper AE, Tighe TB, Bahnck KB, Skriba HT, Reinard MD, Haynie BC, Opila RL, Winograd N, Allara DL. Bond insertion, complexation, and penetration pathways of vapor-deposited aluminum atoms with HO- and CH(3)O-terminated organic monolayers. Journal of the American Chemical Society. 124: 5528-41. PMID 11996596 DOI: 10.1021/Ja0123453 |
0.382 |
|
| 2002 |
Addo EA, Shah I, Opila R, Barnett AM, Allison K, Sulima O. Screen printable doped self-aligned metallization for solar cells Materials Research Society Symposium - Proceedings. 744: 225-230. DOI: 10.1557/Proc-744-M5.17 |
0.79 |
|
| 2002 |
Busch BW, Pluchery O, Chabal YJ, Muller DA, Opila RL, Raynien Kwo J, Garfunkel E. Materials Characterization of Alternative Gate Dielectrics Mrs Bulletin. 27: 206-211. DOI: 10.1557/Mrs2002.72 |
0.392 |
|
| 2002 |
Opila RL, Wilk GD, Alam MA, Van Dover RB, Busch BW. Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge Applied Physics Letters. 81: 1788-1790. DOI: 10.1063/1.1505120 |
0.365 |
|
| 2002 |
Pluchery O, Eng J, Opila RL, Chabal YJ. Vibrational study of indium phosphide oxides Surface Science. 502: 75-80. DOI: 10.1016/S0039-6028(01)01901-X |
0.322 |
|
| 2001 |
Eng J, Opila RL, Rosamilia JM, Sapjeta BJ, Chabal YJ, Boone T, Masaitis R, Sorsch T, Green ML. The evolution of chemical oxides into ultrathin oxides: A spectroscopic characterization Solid State Phenomena. 76: 145-148. DOI: 10.4028/Www.Scientific.Net/Ssp.76-77.145 |
0.3 |
|
| 2001 |
Kwo J, Hong M, Kortan AR, Queeney KL, Chabal YJ, Opila RL, Muller DA, Chu SNG, Sapjeta BJ, Lay TS, Mannaerts JP, Boone T, Krautter HW, Krajewski JJ, Sergnt AM, et al. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si Journal of Applied Physics. 89: 3920-3927. DOI: 10.1063/1.1352688 |
0.437 |
|
| 2001 |
Opila RL, Eng J. Thin films and interfaces in microelectronics: Composition and chemistry as function of depth Progress in Surface Science. 69: 125-163. DOI: 10.1016/S0079-6816(01)00049-1 |
0.393 |
|
| 2000 |
Chang JP, Green ML, Donnelly VM, Opila RL, Eng J, Sapjeta J, Silverman PJ, Weir B, Lu HC, Gustafsson T, Garfunkel E. Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy Journal of Applied Physics. 87: 4449-4455. DOI: 10.1063/1.373090 |
0.395 |
|
| 2000 |
Queeney KT, Weldon MK, Chang JP, Chabal YJ, Gurevich AB, Sapjeta J, Opila RL. Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon Journal of Applied Physics. 87: 1322-1330. DOI: 10.1063/1.372017 |
0.43 |
|
| 2000 |
Fisher GL, Hooper AE, Opila RL, Allara DL, Winograd N. The interaction of vapor-deposited Al atoms with CO 2H groups at the surface of a self-assembled alkanethiolate monolayer on gold Journal of Physical Chemistry B. 104: 3267-3273. DOI: 10.1021/Jp993354P |
0.324 |
|
| 2000 |
Queeney KT, Weldon MK, Chang JP, Chabal YJ, Gurevich AB, Sapjeta J, Opila RL. Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon Journal of Applied Physics. 87: 1322-1330. |
0.322 |
|
| 1999 |
Kim YO, Bevk J, Furtsch M, Georgiou GE, Mansfield W, Masaitis R, Opila R, Silverman PJ. W-Polycide Gates with a Thin Polysilicon Layer: Microstructure and Resistivity Solid State Phenomena. 583. DOI: 10.4028/Www.Scientific.Net/Ssp.67-68.583 |
0.308 |
|
| 1999 |
Chang JP, Steigerwald ML, Fleming RM, Opila RL, Alers GB. Oxygen diffusioin in tantalum oxide metal-oxide-metal capacitor structures Materials Research Society Symposium - Proceedings. 574: 329-334. DOI: 10.1557/Proc-574-329 |
0.359 |
|
| 1999 |
Kwo J, Murphy DW, Hong M, Mannaerts JP, Opila RL, Masaitis RL, Sergent AM. Passivation of GaAs using gallium-gadolinium oxides Journal of Vacuum Science & Technology B. 17: 1294-1296. DOI: 10.1116/1.590743 |
0.369 |
|
| 1999 |
Chang JP, Krautter HW, Zhu W, Opila RL, Pai CS. Integration of fluorinated amorphous carbon as low-dielectric constant Insulator: Effects of heating and deposition of tantalum nitride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2969-2974. DOI: 10.1116/1.581968 |
0.304 |
|
| 1999 |
Kwo J, Murphy DW, Hong M, Opila RL, Mannaerts JP, Sergent AM, Masaitis RL. Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films Applied Physics Letters. 75: 1116-1118. DOI: 10.1063/1.124614 |
0.386 |
|
| 1999 |
Gurevich AB, Weldon MK, Chabal YJ, Opila RL, Sapjeta J. Thermal evolution of impurities in wet chemical silicon oxides Applied Physics Letters. 74: 1257-1259. DOI: 10.1063/1.123517 |
0.387 |
|
| 1999 |
Chang JP, Steigerwald ML, Fleming RM, Opila RL, Alers GB. Thermal stability of Ta2O5 in metal–oxide–metal capacitor structures Applied Physics Letters. 74: 3705-3707. DOI: 10.1063/1.123227 |
0.332 |
|
| 1999 |
Hooper A, Fisher GL, Konstadinidis K, Jung D, Nguyen H, Opila R, Collins RW, Winograd N, Allara DL. Chemical effects of methyl and methyl ester groups on the nucleation and growth of vapor-deposited aluminum films Journal of the American Chemical Society. 121: 8052-8064. DOI: 10.1021/Ja9835234 |
0.354 |
|
| 1999 |
Fisher GL, Hooper A, Opila RL, Jung DR, Allara DL, Winograd N. The interaction between vapor-deposited Al atoms and methylester-terminated self-assembled monolayers studied by time-of-flight secondary ion mass spectrometry, X-ray photoelectron spectroscopy and infrared reflectance spectroscopy Journal of Electron Spectroscopy and Related Phenomena. 98: 139-148. DOI: 10.1016/S0368-2048(98)00283-7 |
0.325 |
|
| 1999 |
Lu HC, Yasuda N, Garfunkel E, Gustafsson T, Chang JP, Opila RL, Alers G. Structural properties of thin films of high dielectric constant materials on silicon Microelectronic Engineering. 48: 287-290. DOI: 10.1016/S0167-9317(99)00390-1 |
0.459 |
|
| 1998 |
Kima YO, Bevk J, Furtsch M, Georgiou GE, Mansfield W, Masaitis R, Opila R, Silverman PJ. Microstructural Changes in W-Polycide Gates Capped with A Thin Polysilicon Layer Mrs Proceedings. 523: 109. DOI: 10.1557/Proc-523-109 |
0.311 |
|
| 1998 |
Ryan RW, Kopf RF, Hamm RA, Malik RJ, Masaitis R, Opila R. Dielectric-assisted trilayer lift-off process for improved metal definition Journal of Vacuum Science & Technology B. 16: 2759-2762. DOI: 10.1116/1.590267 |
0.311 |
|
| 1998 |
Du M, Opila RL, Case C. Interface formation between metals (Cu, Ti) and low dielectric constant organic polymer (FLARE™ 1.0) Journal of Vacuum Science and Technology. 16: 155-162. DOI: 10.1116/1.580964 |
0.331 |
|
| 1997 |
Passlack M, Mannaerts JP, Opila RL, Chu SNG, Moriya N, Ren F, Kwo JR. Low Dit, thermodynamically stable Ga2O3-GaAs interfaces: fabrication, characterization, and modeling Ieee Transactions On Electron Devices. 44: 214-225. DOI: 10.1109/16.557709 |
0.43 |
|
| 1997 |
Hong M, Passlack M, Mannaerts JP, Harris TD, Schnoes ML, Opila RL, Krautter HW. A Ga2O3 passivation technique compatible with GaAs device processing Solid-State Electronics. 41: 643-646. DOI: 10.1016/S0038-1101(96)00183-9 |
0.43 |
|
| 1997 |
Hong M, Passlack M, Mannaerts JP, Harris TD, Schnoes ML, Opila RL, Krautter HW. A Ga2O3 passivation technique compatible with GaAs device processing Solid-State Electronics. 41: 643-646. |
0.321 |
|
| 1996 |
Fiorino ME, Opila RL, Konstadinidas K, Fang WC. Electrochemical and X-ray photoelectron spectroscopy characterization of surface films on MmNi3.5Al0.8Co0.7 Journal of the Electrochemical Society. 143: 2422-2428. DOI: 10.1149/1.1837025 |
0.386 |
|
| 1996 |
Passlack M, Hong M, Mannaerts JP, Opila RL, Ren F. Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy Applied Physics Letters. 69: 302-304. DOI: 10.1063/1.118040 |
0.37 |
|
| 1996 |
Passlack M, Hong M, Opila RL, Mannaerts JP, Kwo JR. GaAs surface passivation using in-situ oxide deposition Applied Surface Science. 104: 441-447. DOI: 10.1016/S0169-4332(96)00184-5 |
0.45 |
|
| 1995 |
Konstadinidis K, Papadimitrakopoulos F, Galvin M, Opila R. In-Situ XPS Study of the Aluminum Poly(p-Phenylenevinylene) Interface Mrs Proceedings. 385. DOI: 10.1557/Proc-385-117 |
0.359 |
|
| 1995 |
Opila RL, Krautter HW, Zegarski BR, Duboisa LH, Wenger G. Thermal Stability of Azole‐Coated Copper Surfaces Journal of the Electrochemical Society. 142: 4074-4077. DOI: 10.1149/1.2048465 |
0.358 |
|
| 1995 |
Ma Y, Green ML, Torek K, Ruzyllo J, Opila R, Konstadinidis K, Siconolfi D, Brasen D. In Situ Vapor Phase Pregate Oxide Cleaning and Its Effects on Metal‐Oxide‐Semiconductor Device Characteristics Journal of the Electrochemical Society. 142. DOI: 10.1149/1.2048451 |
0.41 |
|
| 1995 |
Chand N, Kola RR, Opila RL, Comizzoli RB, Krautter H, Sergent AM, Tsang WT, Osenbach JW, Luftman HS. Stress free and moisture insensitive silicon oxide dielectric films formed by molecular-beam deposition Journal of Applied Physics. 78: 3315-3322. DOI: 10.1063/1.360024 |
0.398 |
|
| 1995 |
Konstadinidis K, Papadimitrakopoulos F, Galvin M, Opila RL. In situ x-ray photoelectron spectroscopy study of aluminum/poly (p-phenylenevinylene) interfaces Journal of Applied Physics. 77: 5642-5646. DOI: 10.1063/1.359206 |
0.392 |
|
| 1995 |
Comizzoli RB, Frankenthal RP, Hanson KJ, Konstadinidis K, Opila RL, Sapjeta J, Sinclair JD, Takahashi KM, Frank AL, Ibidunni AO. Electrochemical aspects of corrosion resistance and etching of metallizations for microelectronics Materials Science and Engineering A. 198: 153-160. DOI: 10.1016/0921-5093(95)80070-B |
0.306 |
|
| 1995 |
Konstadinidis K, Zhang P, Opila RL, Allara DL. An in-situ X-ray photoelectron study of the interaction between vapor-deposited Ti atoms and functional groups at the surfaces of self-assembled monolayers Surface Science. 338: 300-312. DOI: 10.1016/0039-6028(95)80048-4 |
0.391 |
|
| 1994 |
Passlack M, Hunt NEJ, Schubert EF, Zydzik GJ, Hong M, Mannaerts JP, Opila RL, Fischer RJ. Dielectric properties of electron-beam deposited Ga2O 3 films Applied Physics Letters. 64: 2715-2717. DOI: 10.1063/1.111452 |
0.384 |
|
| 1994 |
Schubert EF, Passlack M, Hong M, Mannerts J, Opila RL, Pfeiffer LN, West KW, Bethea CG, Zydzik GJ. Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films Applied Physics Letters. 64: 2976-2978. DOI: 10.1063/1.111376 |
0.393 |
|
| 1993 |
Konstadinidis K, Opila RL, Taylor JA, Miller AC. Titanium deposition on polymer surfaces: An XPS study Materials Research Society Symposium Proceedings. 304: 83-90. DOI: 10.1557/Proc-304-83 |
0.391 |
|
| 1993 |
Opila RL, Konstadinidis K, Ibidunni AO, Davenport AJ, Isaacs HS. X-ray absorption studies of Ti/polymer and Cr/polymer interfaces Materials Research Society Symposium Proceedings. 304: 111-116. DOI: 10.1557/Proc-304-111 |
0.303 |
|
| 1993 |
Artaki I, Ray U, Gordon HM, Opila RL. Corrosion protection of copper using organic solderability preservatives Circuit World. 19: 40-45. DOI: 10.1108/Eb046211 |
0.37 |
|
| 1993 |
Gregus JA, Vernon MF, Gottscho RA, Scheller GR, Hobson WS, Opila RL, Yoon E. Low-temperature plasma etching of GaAs, AlGaAs, and AlAs Plasma Chemistry and Plasma Processing. 13: 521-537. DOI: 10.1007/Bf01465880 |
0.35 |
|
| 1993 |
Ibidunni AO, MaSaitis RL, Opila RL, Davenport AJ, Isaacs HS, Taylor JA. Characterization of the oxidation of tantalum nitride Surface and Interface Analysis. 20: 559-564. DOI: 10.1002/Sia.740200703 |
0.39 |
|
| 1992 |
Sher A, Feldman RD, Austin RF, Opila RL, Masaitis RL, Zyskind JL, Sulhoff JW. Fabrication of n-native oxide/p-ZnTe heterojunctions by the anodic oxidation of ZnTe MBE layers Journal of Electronic Materials. 21: 653-657. DOI: 10.1007/Bf02655435 |
0.337 |
|
| 1990 |
Opila RL, Marchut L, Hollenhorst JN. Measurement of the Surface Electrical Potential in a Planar Avalanche Photodiode Near Breakdown Journal of the Electrochemical Society. 137: 703-705. DOI: 10.1149/1.2086536 |
0.36 |
|
| 1990 |
Gross ME, Harriott LR, Opila RL. Focused ion beam stimulated deposition of aluminum from trialkylamine alanes Journal of Applied Physics. 68: 4820-4824. DOI: 10.1063/1.346140 |
0.338 |
|
| 1990 |
Kortan AR, Hull R, Opila RL, Bawendi MG, Steigerwald ML, Carroll PJ, Brus LE. Nucleation and growth of CdSe on ZnS quantum crystallite seeds, and vice versa, in inverse micelle media Journal of the American Chemical Society. 112: 1327-1332. DOI: 10.1021/Ja00160A005 |
0.325 |
|
| 1989 |
Comizzoli RB, Opila RL, Wong YH. Corrosion of Aluminum Interconnect Passivated with Polyimide or Silicon Nitride Mrs Proceedings. 154: 205. DOI: 10.1557/Proc-154-277 |
0.37 |
|
| 1989 |
Feldman RD, Nakahara S, Opila RL, Austin RF, Boone T. Origin of defects in (111) HgTe grown by molecular beam epitaxy Journal of Crystal Growth. 98: 581-589. DOI: 10.1016/0022-0248(89)90294-7 |
0.374 |
|
| 1988 |
Feldman RD, Oron M, Austin RF, Opila RL. Very high mobility HgTe films grown on GaAs substrates by molecular-beam epitaxy Journal of Applied Physics. 63: 2872-2874. DOI: 10.1063/1.340944 |
0.348 |
|
| 1988 |
Wayda AL, Schneemeyer LF, Opila RL. Low-temperature deposition of zirconium and hafnium boride films by thermal decomposition of the metal borohydrides (M[BH4]4) Applied Physics Letters. 53: 361-363. DOI: 10.1063/1.100603 |
0.385 |
|
| 1987 |
Awai MA, Lee EH, Chan EY, Lum RM, Klingert JK, Sheng TT, Hopkins LC, Opila RL. Comparative Studies of the Structural, Electrical and Opto-Electronic Properties of Epitaxial GaAs Layers Grown On Either Si, Ge Or Ge Coated Si Substrates By Mocvd Mrs Proceedings. 91: 241. DOI: 10.1557/Proc-91-241 |
0.408 |
|
| 1987 |
Feldman RD, Nakahara S, Austin RF, Boone T, Opila RL, Wynn AS. Defects in (111) HgTe grown by molecular beam epitaxy Applied Physics Letters. 51: 1239-1241. DOI: 10.1063/1.98742 |
0.349 |
|
| 1987 |
Opila RL. Copper patinas: an investigation by Auger electron spectroscopy Corrosion Science. 27: 685-694. DOI: 10.1016/0010-938X(87)90050-3 |
0.312 |
|
| 1986 |
Opila RL, Worlock JM. Surface enhanced raman spectroscopic studies of silver-filled epoxy Journal of the Electrochemical Society. 133: 974-976. DOI: 10.1149/1.2108779 |
0.324 |
|
| 1986 |
Feldman RD, Opila RL, Geballe TH, Celaschi S. Unusual variability of the lattice constant in polycrystalline epitaxial growth of superconducting A15 Nb-Si Thin Solid Films. 137: 315-324. DOI: 10.1016/0040-6090(86)90033-7 |
0.363 |
|
| 1983 |
Opila R, Gomer R. A photoelectron spectroscopic study of changes produced in CO adsorbed on the W(110) plane by electron impact Surface Science. 129: 563-572. DOI: 10.1016/0039-6028(83)90197-8 |
0.477 |
|
| 1983 |
Opila R, Gomer R. Photoemission of Xe and Kr Adsorbed on the W(110) Plane Surface Science. 127: 569-597. DOI: 10.1016/0039-6028(83)90048-1 |
0.502 |
|
| 1981 |
Opila R, Gomer R. Thermal desorption of Xe from the W(110) plane Surface Science. 112: 1-22. DOI: 10.1016/0039-6028(81)90330-7 |
0.522 |
|
| 1981 |
Michel H, Opila R, Gomer R. Adsorption of oxygen on the (110) plane of tungsten at low temperatures Surface Science. 105: 48-58. DOI: 10.1016/0039-6028(81)90147-3 |
0.484 |
|
| 1981 |
Opila R, Gomer R. Adsorption of oxygen on the tungsten (110) plane at low temperatures; spectroscopic measurements Surface Science. 105: 41-47. DOI: 10.1016/0039-6028(81)90146-1 |
0.485 |
|
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