| Year |
Citation |
Score |
| 2020 |
Lan JC, Qiao J, Sung WH, Chen CH, Jhang RH, Lin SH, Ng LR, Liang G, Wu MY, Tu LW, Cheng CM, Liu H, Lee CK. Role of carrier-transfer in the optical nonlinearity of graphene/BiTe heterojunctions. Nanoscale. PMID 32779683 DOI: 10.1039/D0Nr02085K |
0.363 |
|
| 2020 |
Lukman S, Ding L, Xu L, Tao Y, Riis-Jensen AC, Zhang G, Wu QYS, Yang M, Luo S, Hsu C, Yao L, Liang G, Lin H, Zhang YW, Thygesen KS, et al. High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection. Nature Nanotechnology. PMID 32601449 DOI: 10.1038/S41565-020-0717-2 |
0.303 |
|
| 2020 |
Luo S, Zhang X, Liang G. Performance Evaluation and Device Physics Investigation of Negative-Capacitance MOSFETs Based on Ultrathin Body Silicon and Monolayer MoS 2 Ieee Transactions On Electron Devices. 67: 3049-3055. DOI: 10.1109/Ted.2020.2998442 |
0.373 |
|
| 2020 |
Zhu Z, Cai K, Deng J, Miriyala VPK, Yang H, Fong X, Liang G. Electrical Generation and Detection of Terahertz Signal Based on Spin-Wave Emission From Ferrimagnets Physical Review Applied. 13. DOI: 10.1103/Physrevapplied.13.034040 |
0.324 |
|
| 2019 |
Shi S, Liang S, Zhu Z, Cai K, Pollard SD, Wang Y, Wang J, Wang Q, He P, Yu J, Eda G, Liang G, Yang H. All-electric magnetization switching and Dzyaloshinskii-Moriya interaction in WTe/ferromagnet heterostructures. Nature Nanotechnology. PMID 31427750 DOI: 10.1038/S41565-019-0525-8 |
0.369 |
|
| 2019 |
Yesilyurt C, Siu ZB, Tan SG, Liang G, Yang SA, Jalil MBA. Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion. Scientific Reports. 9: 4480. PMID 30872691 DOI: 10.1038/S41598-019-40947-2 |
0.315 |
|
| 2019 |
Wang L, Wang L, Ang K, Thean AV, Liang G. A Compact Model for 2-D Poly-MoS 2 FETs With Resistive Switching in Postsynaptic Simulation Ieee Transactions On Electron Devices. 66: 4092-4100. DOI: 10.1109/Ted.2019.2931069 |
0.376 |
|
| 2019 |
Miriyala VPK, Fong X, Liang G. Influence of Size and Shape on the Performance of VCMA-Based MTJs Ieee Transactions On Electron Devices. 66: 944-949. DOI: 10.1109/Ted.2018.2889112 |
0.311 |
|
| 2019 |
Sun C, Deng J, Rafi-Ul-Islam SM, Liang G, Yang H, Jalil MBA. Field-Free Switching of Perpendicular Magnetization Through Spin Hall and Anomalous Hall Effects in Ferromagnet-Heavy-Metal-Ferromagnet Structures Physical Review Applied. 12: 34022. DOI: 10.1103/Physrevapplied.12.034022 |
0.309 |
|
| 2019 |
Wang L, Thean AV, Liang G. A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems Journal of Applied Physics. 125: 224302-224302. DOI: 10.1063/1.5098862 |
0.332 |
|
| 2019 |
Zhu Z, Deng J, Fong X, Liang G. Voltage-input spintronic oscillator based on competing effect for extended oscillation regions Journal of Applied Physics. 125: 183902. DOI: 10.1063/1.5092881 |
0.346 |
|
| 2019 |
Miriyala VPK, Zhu Z, Liang G, Fong X. Spin-wave mediated interactions for majority computation using Skyrmions and spin-torque nano-oscillators Journal of Magnetism and Magnetic Materials. 486: 165271. DOI: 10.1016/J.Jmmm.2019.165271 |
0.311 |
|
| 2018 |
Yoon Y, Das S, Esseni D, Vittorio DD, Bhat N, Muneta I, Liang G, Schwierz F, Moshkalev SA. Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices Ieee Transactions On Electron Devices. 65: 4034-4039. DOI: 10.1109/Ted.2018.2867909 |
0.311 |
|
| 2018 |
Wang L, Li Y, Gong X, Thean AV, Liang G. A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect Ieee Electron Device Letters. 39: 761-764. DOI: 10.1109/Led.2018.2820142 |
0.381 |
|
| 2018 |
Zhu Z, Fong X, Liang G. Theoretical proposal for determining angular momentum compensation in ferrimagnets Physical Review B. 97. DOI: 10.1103/Physrevb.97.184410 |
0.322 |
|
| 2018 |
Zhang X, Gong X, Liang G. Effects of scalability and floating metal on NC-FETs based on a real-space atomic model Semiconductor Science and Technology. 33. DOI: 10.1088/1361-6641/Aace45 |
0.368 |
|
| 2018 |
Zhu Z, Fong X, Liang G. Damping-like spin-orbit-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch equation Journal of Applied Physics. 124: 193901. DOI: 10.1063/1.5048040 |
0.329 |
|
| 2018 |
Wang L, Li Y, Feng X, Ang K, Gong X, Thean AV, Liang G. A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors Journal of Applied Physics. 124: 34302. DOI: 10.1063/1.5040908 |
0.366 |
|
| 2018 |
Deng J, Fong X, Liang G. Electric-field-induced three-terminal pMTJ switching in the absence of an external magnetic field Applied Physics Letters. 112: 252405. DOI: 10.1063/1.5027759 |
0.326 |
|
| 2018 |
Wang L, Thean AV, Liang G. Percolation theory based statistical resistance model for resistive random access memory Applied Physics Letters. 112: 253505. DOI: 10.1063/1.5023196 |
0.306 |
|
| 2017 |
Kumar A, Lee SY, Yadav S, Tan KH, Loke WK, Dong Y, Lee KH, Wicaksono S, Liang G, Yoon SF, Antoniadis D, Yeo YC, Gong X. Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs). Optics Express. 25: 31853-31862. PMID 29245855 DOI: 10.1364/Oe.25.031853 |
0.331 |
|
| 2017 |
Deng J, Liang G, Gupta G. Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ. Scientific Reports. 7: 16562. PMID 29185449 DOI: 10.1038/S41598-017-16292-7 |
0.329 |
|
| 2017 |
Wang W, Dong Y, Lee SY, Loke WK, Lei D, Yoon SF, Liang G, Gong X, Yeo YC. Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range. Optics Express. 25: 18502-18507. PMID 29041050 DOI: 10.1364/Oe.25.018502 |
0.319 |
|
| 2017 |
Tsai ML, Li MY, Retamal JRD, Lam KT, Lin YC, Suenaga K, Chen LJ, Liang G, Li LJ, He JH. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency. Advanced Materials (Deerfield Beach, Fla.). PMID 28650580 DOI: 10.1002/Adma.201701168 |
0.33 |
|
| 2017 |
Kumar A, Lee SY, Yadav S, Tan KH, Loke WK, Wicaksono S, Li D, Panah SM, Liang G, Yoon SF, Gong X, Antoniadis D, Yeo YC. Monolithic integration of InGaAs n-FETs and lasers on Ge substrate. Optics Express. 25: 5146-5155. PMID 28380779 DOI: 10.1364/Oe.25.005146 |
0.333 |
|
| 2017 |
Sadi MA, Liang G. Wave Function Parity Loss Used to Mitigate Thermal Broadening in Spin-orbit Coupled Zigzag Graphene Analogues. Scientific Reports. 7: 40546. PMID 28091616 DOI: 10.1038/Srep40546 |
0.355 |
|
| 2017 |
Yadav S, Tan KH, Kumar A, Goh KH, Liang G, Yoon S, Gong X, Yeo Y. Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate Ieee Transactions On Electron Devices. 64: 353-360. DOI: 10.1109/Ted.2016.2637382 |
0.378 |
|
| 2017 |
Luo S, Lam K, Wang B, Hsu C, Huang W, Yao L, Bansil A, Lin H, Liang G. Effects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET Ieee Transactions On Electron Devices. 64: 579-586. DOI: 10.1109/Ted.2016.2635690 |
0.368 |
|
| 2017 |
Zhang X, Lam K, Low KL, Yeo Y, Liang G. Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential Ieee Transactions On Electron Devices. 64: 58-65. DOI: 10.1109/Ted.2016.2632310 |
0.392 |
|
| 2017 |
Wu Y, Luo S, Wang W, Masudy-Panah S, Lei D, Liang G, Gong X, Yeo Y. Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film Journal of Applied Physics. 122: 224503. DOI: 10.1063/1.5003272 |
0.331 |
|
| 2017 |
Yesilyurt C, Siu ZB, Tan SG, Liang G, Yang SA, Jalil MBA. Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion Applied Physics Letters. 111: 063101. DOI: 10.1063/1.4997296 |
0.352 |
|
| 2017 |
Yesilyurt C, Siu ZB, Tan SG, Liang G, Jalil MBA. Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap Journal of Applied Physics. 121: 244303. DOI: 10.1063/1.4989993 |
0.375 |
|
| 2016 |
Yesilyurt C, Tan SG, Liang G, Jalil MB. Klein tunneling in Weyl semimetals under the influence of magnetic field. Scientific Reports. 6: 38862. PMID 27941894 DOI: 10.1038/Srep38862 |
0.377 |
|
| 2016 |
Goh KH, Yadav S, Low KL, Liang G, Gong X, Yeo YC. Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2526778 |
0.306 |
|
| 2016 |
Low KL, Yeo YC, Liang G. Ultimate performance projection of ultrathin body transistor based on group IV, III-V, and 2-D-materials Ieee Transactions On Electron Devices. 63: 773-780. DOI: 10.1109/Ted.2015.2508815 |
0.359 |
|
| 2016 |
Dong Y, Wang W, Lee SY, Lei D, Gong X, Loke WK, Yoon SF, Liang G, Yeo YC. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/9/095001 |
0.314 |
|
| 2016 |
Yesilyurt C, Ghee Tan S, Liang G, Jalil MBA. Perfect valley filter in strained graphene with single barrier region Aip Advances. 6. DOI: 10.1063/1.4943237 |
0.344 |
|
| 2016 |
Lei D, Wang W, Zhang Z, Pan J, Gong X, Liang G, Tok ES, Yeo YC. Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality Journal of Applied Physics. 119. DOI: 10.1063/1.4939761 |
0.349 |
|
| 2015 |
Dong Y, Wang W, Lei D, Gong X, Zhou Q, Lee SY, Loke WK, Yoon SF, Tok ES, Liang G, Yeo YC. Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique. Optics Express. 23: 18611-9. PMID 26191919 DOI: 10.1364/Oe.23.018611 |
0.333 |
|
| 2015 |
Gupta G, Jalil MB, Liang G. Contact effects in thin 3D-topological insulators: how does the current flow? Scientific Reports. 5: 9479. PMID 25820460 DOI: 10.1038/Srep09479 |
0.38 |
|
| 2015 |
Guo Y, Zhang X, Low KL, Lam KT, Yeo YC, Liang G. Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2014.2387194 |
0.345 |
|
| 2015 |
Dong Y, Wang W, Xu X, Gong X, Lei D, Zhou Q, Xu Z, Loke WK, Yoon SF, Liang G, Yeo YC. Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration Ieee Transactions On Electron Devices. 62: 128-135. DOI: 10.1109/Ted.2014.2366205 |
0.361 |
|
| 2015 |
Gupta G, Jalil MBA, Liang G. Torque engineering in trilayer spin-hall system Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/4/045004 |
0.324 |
|
| 2015 |
Gupta G, Lin H, Bansil A, Jalil MBA, Liang G. Carrier transport in Bi2Se3 topological insulator slab Physica E: Low-Dimensional Systems and Nanostructures. 74: 10-19. DOI: 10.1016/J.Physe.2015.06.003 |
0.361 |
|
| 2014 |
Gupta G, Jalil MB, Liang G. Evaluation of mobility in thin Bi2Se3 topological insulator for prospects of local electrical interconnects. Scientific Reports. 4: 6838. PMID 25354476 DOI: 10.1038/Srep06838 |
0.343 |
|
| 2014 |
Gupta G, Jalil MB, Liang G. Effect of band-alignment operation on carrier transport in Bi2Se3 topological insulator. Scientific Reports. 4: 6220. PMID 25164148 DOI: 10.1038/Srep06220 |
0.37 |
|
| 2014 |
Huang W, Luo X, Gan CK, Quek SY, Liang G. Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2. Physical Chemistry Chemical Physics : Pccp. 16: 10866-74. PMID 24760342 DOI: 10.1039/C4Cp00487F |
0.341 |
|
| 2014 |
Low KL, Huang W, Yeo YC, Liang G. Ballistic transport performance of silicane and germanane transistors Ieee Transactions On Electron Devices. 61: 1590-1598. DOI: 10.1109/Ted.2014.2313065 |
0.389 |
|
| 2014 |
Sadi MA, Gupta G, Liang G. Effect of phase transition on quantum transport in group-IV two-dimensional U-shape device Journal of Applied Physics. 116: 153708. DOI: 10.1063/1.4898357 |
0.356 |
|
| 2014 |
Gupta G, Lin H, Bansil A, Abdul Jalil MB, Huang C, Tsai W, Liang G. Y-shape spin-separator for two-dimensional group-IV nanoribbons based on quantum spin hall effect Applied Physics Letters. 104: 032410. DOI: 10.1063/1.4863088 |
0.336 |
|
| 2013 |
Zeng M, Huang W, Liang G. Spin-dependent thermoelectric effects in graphene-based spin valves. Nanoscale. 5: 200-8. PMID 23151965 DOI: 10.1039/C2Nr32226A |
0.343 |
|
| 2013 |
Gupta G, Nurbawono A, Zeng M, Jalil MBA, Liang G. Theoretical study on Topological Insulator based Spintronic Tristable Multivibrator The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2013.Ps-12-6 |
0.31 |
|
| 2013 |
Huang W, Da H, Liang G. Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers Journal of Applied Physics. 113: 104304. DOI: 10.1063/1.4794363 |
0.345 |
|
| 2012 |
Gupta G, Jalil MB, Yu B, Liang G. Performance evaluation of electro-optic effect based graphene transistors. Nanoscale. 4: 6365-73. PMID 22948474 DOI: 10.1039/C2Nr31501G |
0.419 |
|
| 2012 |
Chin SK, Lam KT, Seah D, Liang G. Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight-binding π-bond model. Nanoscale Research Letters. 7: 114. PMID 22325480 DOI: 10.1186/1556-276X-7-114 |
0.362 |
|
| 2012 |
Gupta G, Liang G, Jalil MBA. Comparison of Electro-Optic Effect based Graphene Transistors The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.Ps-13-11 |
0.321 |
|
| 2012 |
Da H, Lam K, Samudra G, Chin S, Liang G. Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel Ieee Transactions On Electron Devices. 59: 1454-1461. DOI: 10.1109/Ted.2012.2186577 |
0.414 |
|
| 2012 |
Zeng M, Liang G. Spin filtering and spin separating effects in U-shaped topological insulator devices Journal of Applied Physics. 112. DOI: 10.1063/1.4757411 |
0.345 |
|
| 2012 |
Da H, Lam K, Samudra GS, Liang G, Chin S. Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors Solid-State Electronics. 77: 51-55. DOI: 10.1016/J.Sse.2012.05.023 |
0.416 |
|
| 2012 |
Qian Y, Lam K, Lee C, Liang G. The effects of interlayer mismatch on electronic properties of bilayer armchair graphene nanoribbons Carbon. 50: 1659-1666. DOI: 10.1016/J.Carbon.2011.12.007 |
0.372 |
|
| 2011 |
Zeng M, Feng Y, Liang G. Graphene-based spin caloritronics. Nano Letters. 11: 1369-73. PMID 21344908 DOI: 10.1021/Nl2000049 |
0.349 |
|
| 2011 |
Sreenivas VP, Lam KT, Liang G. RF Performance of Graphene Nano-Ribbon MOSFET vs. TFET The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.K-9-5 |
0.331 |
|
| 2011 |
Lam KT, Chin SK, Liang G. Device Performance of Graphene Nanoribbon MOSFET and Tunneling FET with Phonon Scattering: A Computation Study The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.J-3-3 |
0.352 |
|
| 2011 |
Lam K, Yang Y, Samudra GS, Yeo Y, Liang G. Electrostatics of Ultimately Thin-Body Tunneling FET Using Graphene Nanoribbon Ieee Electron Device Letters. 32: 431-433. DOI: 10.1109/Led.2010.2103372 |
0.372 |
|
| 2011 |
Huang W, Wang J, Liang G. Theoretical study on thermoelectric properties of kinked graphene nanoribbons Physical Review B. 84: 45410. DOI: 10.1103/Physrevb.84.045410 |
0.352 |
|
| 2011 |
Cuansing EC, Liang G. Time-dependent quantum transport and power-law decay of the transient current in a nano-relay and nano-oscillator Journal of Applied Physics. 110: 083704. DOI: 10.1063/1.3651390 |
0.312 |
|
| 2011 |
Zeng M, Feng Y, Liang G. Thermally induced currents in graphene-based heterostructure Applied Physics Letters. 99: 123114. DOI: 10.1063/1.3641478 |
0.341 |
|
| 2011 |
Liang G, Kumar SB, Jalil MBA, Tan SG. High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects Applied Physics Letters. 99: 83107. DOI: 10.1063/1.3624459 |
0.391 |
|
| 2011 |
Lam K, Stephen Leo M, Lee C, Liang G. Design evaluation of graphene nanoribbon nanoelectromechanical devices Journal of Applied Physics. 110: 024302. DOI: 10.1063/1.3606578 |
0.372 |
|
| 2011 |
Da H, Liang G. Enhanced Faraday rotation in magnetophotonic crystal infiltrated with graphene Applied Physics Letters. 98. DOI: 10.1063/1.3605593 |
0.343 |
|
| 2011 |
Kumar SB, Fujita T, Liang G. Conductance modulation in graphene nanoribbon under transverse asymmetric electric potential Journal of Applied Physics. 109: 73704. DOI: 10.1063/1.3562155 |
0.413 |
|
| 2010 |
Kumar SB, Jalil MB, Tan SG, Liang G. The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 375303. PMID 21403192 DOI: 10.1088/0953-8984/22/37/375303 |
0.38 |
|
| 2010 |
Kumar SB, Fujita T, Liang G. Graphene based transversal-gated field effect transistor due to band gap modulation The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.J-5-4 |
0.385 |
|
| 2010 |
Da H, Lam KT, Chin SK, Samudra GS, Yeo YC, Liang G. Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.J-5-2 |
0.368 |
|
| 2010 |
Huang W, Liang G. Size and Chirality Dependence on Thermoelectric Properties of Graphene Nanoribbons The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.J-3-2 |
0.309 |
|
| 2010 |
Koong CS, Samudra G, Liang G. Shape Effects on the Performance of Si and Ge Nanowire Field-Effect Transistors Based on Size Dependent Bandstructure Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.04Dn07 |
0.386 |
|
| 2010 |
Lam K, Chin S, Seah DW, Kumar SB, Liang G. Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors Japanese Journal of Applied Physics. 49: 04DJ10. DOI: 10.1143/Jjap.49.04Dj10 |
0.423 |
|
| 2010 |
Chin S, Seah D, Lam K, Samudra GS, Liang G. Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs Ieee Transactions On Electron Devices. 57: 3144-3152. DOI: 10.1109/Ted.2010.2065809 |
0.386 |
|
| 2010 |
Huang W, Koong CS, Liang G. Theoretical Study on Thermoelectric Properties of Ge Nanowires Based on Electronic Band Structures Ieee Electron Device Letters. 31: 1026-1028. DOI: 10.1109/Led.2010.2053190 |
0.354 |
|
| 2010 |
Lam K, Seah D, Chin S, Bala Kumar S, Samudra G, Yeo Y, Liang G. A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel Ieee Electron Device Letters. 31: 555-557. DOI: 10.1109/Led.2010.2045339 |
0.379 |
|
| 2010 |
Liang G, Khalid SB, Lam K. Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes Journal of Physics D: Applied Physics. 43: 215101. DOI: 10.1088/0022-3727/43/21/215101 |
0.399 |
|
| 2010 |
Shin YJ, Kwon JH, Kalon G, Lam K, Bhatia CS, Liang G, Yang H. Ambipolar bistable switching effect of graphene Applied Physics Letters. 97: 262105. DOI: 10.1063/1.3532849 |
0.377 |
|
| 2010 |
Shin YJ, Kalon G, Son J, Kwon JH, Niu J, Bhatia CS, Liang G, Yang H. Tunneling characteristics of graphene Applied Physics Letters. 97: 252102. DOI: 10.1063/1.3527979 |
0.362 |
|
| 2010 |
Kumar SB, Jalil MBA, Tan SG, Liang G. Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation Journal of Applied Physics. 108: 33709. DOI: 10.1063/1.3457353 |
0.406 |
|
| 2010 |
Liang G, Huang W, Koong CS, Wang J, Lan J. Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structures Journal of Applied Physics. 107: 14317. DOI: 10.1063/1.3273485 |
0.369 |
|
| 2009 |
Lam KT, Kumar SB, Chin SK, Seah DW, Liang G. Performance Evaluation of Graphene Nanoribbon Tunneling Field Effect Transistors The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.G-9-4 |
0.351 |
|
| 2009 |
Khalid SB, Lam KT, Liang G. Computational Study of Edge Roughness Effect on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.G-9-3 |
0.375 |
|
| 2009 |
Teong H, Lam K, Liang G. A Computational Study on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes Japanese Journal of Applied Physics. 48: 04C156. DOI: 10.1143/Jjap.48.04C156 |
0.439 |
|
| 2009 |
Ni X, Liang G, Wang J, Li B. Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons Applied Physics Letters. 95: 192114. DOI: 10.1063/1.3264087 |
0.352 |
|
| 2009 |
Lam K, Lee C, Liang G. Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study Applied Physics Letters. 95: 143107. DOI: 10.1063/1.3243695 |
0.378 |
|
| 2009 |
Teong H, Lam K, Khalid SB, Liang G. Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study Journal of Applied Physics. 105: 084317. DOI: 10.1063/1.3115423 |
0.423 |
|
| 2008 |
Zhu ZG, Liang G, Li MF, Samudra G. A pseudopotential method for investigating the surface roughness effect in ultrathin body transistors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 235229. PMID 21694320 DOI: 10.1088/0953-8984/20/23/235229 |
0.322 |
|
| 2008 |
Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Contact effects in graphene nanoribbon transistors. Nano Letters. 8: 1819-24. PMID 18558785 DOI: 10.1021/Nl080255R |
0.384 |
|
| 2008 |
Hu Y, Xiang J, Liang G, Yan H, Lieber CM. Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed. Nano Letters. 8: 925-30. PMID 18251518 DOI: 10.1021/Nl073407B |
0.384 |
|
| 2008 |
Liang G, Teong H, Lam K, Neophytou N, Nikonov DE. Graphene Nanoribbon Transistors and Resonant Tunneling Diodes The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2008.H-10-2 |
0.352 |
|
| 2008 |
Lam K, Liang G. An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges Applied Physics Letters. 92: 223106. DOI: 10.1063/1.2938058 |
0.364 |
|
| 2008 |
Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Computational study of double-gate graphene nano-ribbon transistors Journal of Computational Electronics. 7: 394-397. DOI: 10.1007/S10825-008-0243-1 |
0.412 |
|
| 2007 |
Liang G, Xiang J, Kharche N, Klimeck G, Lieber CM, Lundstrom M. Performance analysis of a Ge/Si core/shell nanowire field-effect transistor. Nano Letters. 7: 642-6. PMID 17326690 DOI: 10.1021/Nl062596F |
0.568 |
|
| 2007 |
Liang G, Kienle D, Patil SKR, Wang J, Ghosh AW, Khare SV. Impact of structure relaxation on the ultimate performance of a small diameter, n-Type (110) Si-nanowire MOSFET Ieee Transactions On Nanotechnology. 6: 225-228. DOI: 10.1109/Tnano.2007.891816 |
0.375 |
|
| 2007 |
Liang G, Neophytou N, Nikonov DE, Lundstrom MS. Performance projections for ballistic graphene nanoribbon field-effect transistors Ieee Transactions On Electron Devices. 54: 677-682. DOI: 10.1109/Ted.2007.891872 |
0.413 |
|
| 2007 |
Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation Journal of Applied Physics. 102. DOI: 10.1063/1.2775917 |
0.43 |
|
| 2004 |
Liang GC, Ghosh AW, Paulsson M, Datta S. Electrostatic potential profiles of molecular conductors Physical Review B. 69. DOI: 10.1103/Physrevb.69.115302 |
0.664 |
|
| 2004 |
Rakshit T, Liang GC, Ghosh AW, Datta S. Silicon-based molecular electronics Nano Letters. 4: 1803-1807. DOI: 10.1021/Nl049436T |
0.722 |
|
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